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on January 24th

Samsung Electronics improves semiconductor memory design

The South Korean semiconductor industry recently revealed that Samsung Electronics is improving the design of the 12 nanometer dynamic random access memory (DRAM) "D1b".


Samsung Electronics will mass produce "D1b" for the first time in 2023, which will be applied to graphics card DRAM and mobile phone DRAM. This change in DRAM design, which has been in production for over a year, is a rare case in the semiconductor industry.

Professionals say that changing the design is not an easy decision, as changes in manufacturing processes can increase costs. This means that the company has an urgent awareness of improving processes and products.

Samsung Electronics has been modifying its production process based on the new "D1b" design, issuing an emergency equipment order by the end of 2024, upgrading its existing production line, and conducting technology transfer. Considering the progress of equipment construction and trial operation, the new "D1b" will be mass-produced within the year and is expected to be released as early as the second or third quarter.

In addition to changing the "D1b" design, Samsung Electronics has also launched a new development project called "D1b-p" to enhance DRAM competitiveness.
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