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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2SD2017
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2SD2017 - Sanken Electric USA Inc.

Manufacturer Part Number
2SD2017
Manufacturer
Sanken Electric USA Inc.
Allelco Part Number
98D-2SD2017
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
48,704 pcs available, New & Original
Parts Description
TRANS NPN DARL 250V 6A TO220F
Package
TO-220F
Data sheet
2SD2017.pdf

Datasheets

2SD2017.pdf
RoHs Status
RoHS Compliant
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Our certification
In stock: 48704
  • Unit Price: $0.501
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.501 $0.50
200+ $0.20 $40.00
500+ $0.194 $97.00
1000+ $0.191 $191.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

2SD2017 Tech Specifications
Sanken Electric USA Inc. - 2SD2017 technical specifications, attributes, parameters and parts with similar specifications to Sanken Electric USA Inc. - 2SD2017

Product Attribute Attribute Value
Manufacturer Sanken Electric USA Inc.
Voltage - Collector Emitter Breakdown (Max) 250 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A
Transistor Type NPN - Darlington
Supplier Device Package TO-220F
Series -
Power - Max 35 W
Package / Case TO-220-3 Full Pack
Product Attribute Attribute Value
Package Bulk
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Current - Collector Cutoff (Max) 100µA (ICBO)
Current - Collector (Ic) (Max) 6 A

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical limitations of the 2SD2017 NPN Darlington transistor that affect its use in high-current switching applications?
The 2SD2017 is rated for a maximum collector current of 6 A and a peak power dissipation of 35 W, which implies a significant junction-to-ambient thermal resistance when mounted without additional heatsinking. In practical designs, operating near 6 A requires careful thermal management to keep the junction temperature below 150°C. Its saturation voltage of 1.5 V at 2 A collector current results in a conduction loss of approximately 9 W under full load if driven directly by a microcontroller or logic gate, necessitating a low-impedance driver stage due to its high current gain (hFE ≥ 2000 at 2 A). This high gain reduces base drive requirements but increases turn-off time, impacting switching speed in PWM or motor control circuits.
How does the 2SD2017 compare to standard NPN transistors like the 2N3055 in terms of gain, switching behavior, and suitability for relay or solenoid driving?
Unlike the 2N3055, which offers moderate current gain (hFE ~20–30) and fast switching characteristics, the 2SD2017 is a Darlington pair with hFE ≥ 2000, making it ideal for low-drive-current applications such as relay or solenoid control from microcontrollers. However, this comes at the cost of slower turn-off times—typically in the microsecond range—due to charge storage in the two junctions. While the 2N3055 can switch reliably at frequencies above 100 kHz with minimal delay, the 2SD2017 is better suited for DC or low-frequency AC loads where speed is secondary to efficiency in current delivery. For inductive loads, both require flyback diodes, but the 2SD2017’s higher saturation voltage means more power dissipation under load.
Can the 2SD2017 be used in linear amplifier stages, and what are the primary design constraints?
Yes, the 2SD2017 can function in linear mode, but only if operated well within safe thermal limits. Its high current gain allows small input signals to control large output currents, but the 1.5 V Vce(sat) at 2 A results in poor efficiency compared to MOSFETs or even standard BJTs in active mode. In linear audio or RF applications, this leads to significant power dissipation, requiring robust heat sinking. Additionally, the transition frequency of 20 MHz limits its utility to audio frequencies (well below 20 MHz), making it unsuitable for RF amplification. Thermal runaway is also a concern due to positive temperature coefficients in saturation, so emitter ballast resistors may be needed in push-pull configurations.
What base drive considerations are necessary when using the 2SD2017 to ensure reliable turn-on and minimize saturation voltage?
Due to its Darlington configuration, the 2SD2017 requires sufficient base current to fully saturate, despite its high internal gain. A typical rule of thumb is to provide 1/10th of the desired collector current at the base. For example, to saturate at 5 A collector current, a base current of at least 0.5 mA is recommended. Using a low-impedance driver such as a dedicated transistor or gate driver IC helps achieve this. Without adequate base drive, the device operates in the linear region, increasing Vce and power loss. A pull-down resistor (e.g., 1 kΩ) at the base is often used to ensure fast turn-off by discharging stored charge.
Is the 2SD2017 suitable for switching inductive loads like motors or solenoids, and what protection components are essential?
Yes, the 2SD2017 can switch inductive loads such as DC motors or solenoids up to 6 A, provided thermal and voltage stresses are managed. However, the inductive kickback must be suppressed with a freewheeling diode placed across the load in reverse bias. A fast-recovery or Schottky diode with sufficient current rating (e.g., 6 A or higher) is preferred to handle the transient energy. The 250 V collector-emitter breakdown voltage provides margin for typical inductive spikes, but layout parasitics and snubber circuits may be needed in high-inductance applications to prevent voltage overshoot and protect the transistor.
How does the transition frequency of 20 MHz limit the 2SD2017’s use in modern digital control systems?
The 20 MHz transition frequency indicates the point where the current gain drops to unity, meaning the device loses effectiveness as a switch or amplifier above this frequency. In PWM motor control or switching power supplies running at tens of kilohertz, the 2SD2017 will exhibit increased on-resistance and delayed response, reducing efficiency and increasing switching losses. While it may work at lower PWM frequencies (< 10 kHz), performance degrades significantly beyond 50 kHz. For high-speed digital switching, faster devices such as MOSFETs or non-Darlington BJTs are preferable, though the 2SD2017 remains viable in low-duty-cycle, slow-switching applications where simplicity and cost outweigh speed requirements.
What are the implications of the 2SD2017’s TO-220F package for PCB mounting and thermal performance in industrial environments?
The TO-220F package features a metal tab connected to the collector, enabling direct mounting to a heatsink for improved thermal conductivity. Compared to standard TO-220, it offers slightly better thermal resistance due to enhanced contact area, but still requires mechanical fixation and thermal interface material (e.g., silicone grease) for optimal performance. In industrial settings with ambient temperatures exceeding 40°C, a heatsink with thermal resistance below 2°C/W is typically necessary to maintain junction temperature under 125°C during continuous operation at 5 A. Proper PCB creepage and clearance must also be observed due to the high-voltage rating (250 V).
Why might an engineer choose the 2SD2017 over a single-transistor solution despite its higher saturation voltage?
The 2SD2017 integrates two transistors in a Darlington pair, offering extremely high current gain (≥2000) that simplifies drive circuitry—ideal when interfacing low-power controllers (e.g., 3.3 V microcontrollers) to high-current loads. Although its Vce(sat) of 1.5 V at 2 A results in higher conduction losses than a single BJT, this trade-off is acceptable in applications where simplicity, component count reduction, and robustness are priorities. It eliminates the need for intermediate driver stages, reducing board space and complexity in relay, solenoid, or LED driver designs where switching speed is not critical.
Can the 2SD2017 be paralleled to increase current handling, and what precautions are necessary?
Paralleling 2SD2017 transistors is possible to share current, but requires careful current balancing due to mismatched Vce(sat) and temperature coefficients. Without emitter resistors or active balancing, one device may carry excess current and overheat. Adding small emitter sense resistors (e.g., 0.1 Ω) improves sharing but introduces additional voltage drop and power loss. Thermal coupling through a common heatsink helps stabilize operation, but dynamic effects during switching make paralleling less reliable than using a single higher-rated device. For sustained currents above 6 A, a discrete Darlington array or power module is generally more robust.
How does the 100 µA collector cutoff current (ICBO) of the 2SD2017 influence leakage concerns in high-impedance circuits?
With an ICBO max of 100 µA, the 2SD2017 exhibits significant leakage current when off, especially at elevated temperatures. In high-impedance sensor interfaces or battery-powered systems, this leakage can cause unwanted signal degradation or false triggering. For example, in a 10 kΩ source impedance circuit, 100 µA leakage would produce a 1 V offset, potentially saturating downstream stages. While this parameter is more relevant in analog applications, it underscores the importance of ensuring proper biasing and using pull-up/pull-down networks when used as a switch in precision environments.
What role does the Moisture Sensitivity Level (MSL) of 1 play in the handling and reliability of the 2SD2017 in production assembly?
An MSL rating of 1 indicates unlimited floor life and no special storage or baking requirements before soldering, simplifying inventory and assembly logistics for the 2SD2017. This makes it suitable for standard through-hole reflow or wave soldering processes without risk of moisture-induced defects. Manufacturers benefit from reduced handling protocols, but proper handling still requires anti-static measures due to its semiconductor nature. The RoHS compliance further ensures environmental safety, supporting global supply chain integration without additional certification overhead.
How does the ECCN code EAR99 affect international sourcing and export considerations for the 2SD2017?
Classified under ECCN EAR99, the 2SD2017 is considered a low-risk commodity under U.S. export regulations, meaning it generally does not require export licenses for most destinations. This facilitates easier procurement from global distributors and simplifies supply chain diversification. However, end-use restrictions may still apply in certain countries, particularly if the device is incorporated into military or aerospace systems. Engineers should verify final application compliance with local regulations, but the EAR99 status supports broad commercial availability and minimal trade barriers.
What HTSUS classification applies to the 2SD2017, and how does this impact customs and import duties?
The Harmonized Tariff Schedule US classification is 8541.29.0095, which covers other semiconductor devices excluding photovoltaic cells. This designation typically results in moderate import duties (e.g., 2.5% under USMCA), depending on bilateral agreements. Accurate classification ensures compliant cross-border transactions and avoids delays in procurement from international suppliers. For engineering teams managing global sourcing, understanding this code helps forecast costs and streamline documentation, though it has limited technical impact on design decisions.
In what scenarios would the 2SD2017 be preferred over a MOSFET in a 6 A switching application?
The 2SD2017 is advantageous in low-cost, low-complexity applications where simplicity of drive and ruggedness against short-circuit conditions are prioritized over efficiency. Unlike MOSFETs, it does not require gate charge management or negative voltage drives, and can tolerate brief overloads without damage. In automotive or industrial relay drivers where EMI and switching speed are secondary, the 2SD2017 offers reliable operation with minimal external components. However, for high-efficiency switching above 10 kHz or in battery-operated systems, a logic-level MOSFET with lower Rds(on) would be more appropriate due to reduced conduction and switching losses.
How does the 2SD2017 perform in motor control applications compared to a dedicated motor driver IC?
As a discrete component, the 2SD2017 can drive small to medium DC motors up to 6 A, but lacks built-in protection features such as overcurrent shutdown, thermal foldback, or dead-time control found in integrated driver ICs. Designers must implement external diodes, current sensing, and possibly soft-start circuits to match IC-level reliability. While cost-effective for prototyping or low-volume designs, the 2SD2017 increases development time and failure risk in harsh environments. For production systems, combining it with a driver IC or adding discrete protection components bridges the gap between simplicity and robustness.
What design trade-offs exist when selecting the 2SD2017 for a switching regulator application?
Using the 2SD2017 in a buck or boost converter is feasible for low-power designs, but its 1.5 V saturation voltage and 20 MHz bandwidth impose efficiency and frequency limits. At 2 A output, conduction losses exceed 3 W, requiring significant heatsinking. Additionally, slow turn-off times reduce achievable switching frequency, limiting output ripple control and size optimization. While it can replace MOSFETs in simple linear regulators, the lack of voltage-controlled operation makes it inefficient for high-step-down ratios. Thus, it is rarely used in modern switch-mode power supplies, where MOSFETs dominate due to superior figure-of-merit (Rds(on) × Qg).

Parts with Similar Specifications

The three parts on the right have similar specifications to Sanken Electric USA Inc. 2SD2017

Product Attribute 2SD2018 2SD2014 2SD2033AT114E 2SD2016
Part Number 2SD2018 2SD2014 2SD2033AT114E 2SD2016
Manufacturer Panasonic Electronic Components Sanken Electric USA Inc. Rohm Semiconductor Sanken Electric USA Inc.
Mounting Type - Surface Mount Through Hole Surface Mount
Vce Saturation (Max) @ Ib, Ic - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Power - Max - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Transistor Type - - - -
Current - Collector Cutoff (Max) - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Current - Collector (Ic) (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Series - - - -
Frequency - Transition - - - -

2SD2017 Datasheet PDF

Download 2SD2017 pdf datasheets and Sanken Electric USA Inc. documentation for 2SD2017 - Sanken Electric USA Inc..

Datasheets
2SD2017.pdf

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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2SD2017 Image

2SD2017

Sanken Electric USA Inc.
98D-2SD2017

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