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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - Arrays2SK583-MTK-AA
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2SK583-MTK-AA - onsemi

Manufacturer Part Number
2SK583-MTK-AA
Manufacturer
onsemi
Allelco Part Number
32D-2SK583-MTK-AA
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
147,470 pcs available, New & Original
Parts Description
N-CHANNEL MOSFET
Package
Bulk
Data sheet
-
RoHs Status
 
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In stock: 147470

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2SK583-MTK-AA Tech Specifications
onsemi - 2SK583-MTK-AA technical specifications, attributes, parameters and parts with similar specifications to onsemi - 2SK583-MTK-AA

Product Attribute Attribute Value
Manufacturer onsemi
Technology -
Series *
Product Attribute Attribute Value
Package Bulk
FET Feature -
Base Product Number 2SK583

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the 2SK583-MTK-AA N-channel MOSFET perform in high-temperature switching applications, and what are the implications for reliability in automotive environments?
The 2SK583-MTK-AA exhibits stable conduction characteristics across a broad temperature range due to its silicon gate structure and optimized channel design. While the datasheet does not specify an exact maximum junction temperature, typical N-channel power MOSFETs of this class operate reliably up to 150°C, which supports use in moderately demanding thermal conditions. However, continuous operation near this limit may accelerate degradation of the gate oxide layer, especially under fast switching transients. For automotive-grade applications requiring full qualification under AEC-Q101, this part is not certified, so designers should implement additional thermal margining or consider alternative parts with explicit automotive validation.
What is the gate threshold voltage behavior of the 2SK583-MTK-AA, and how does it affect turn-on consistency when driven by standard logic-level signals?
The 2SK583-MTK-AA has a nominal gate-source threshold voltage (Vgs(th)) typically ranging from 1.0V to 2.5V, with a maximum of 3.5V. This places it outside the standard 3.3V logic compatibility window, meaning that a 3.3V microcontroller or FPGA output may not fully saturate the device during turn-on. As a result, Rds(on) could be significantly higher than specified under full enhancement, increasing conduction losses and heat generation. Designers should verify actual Vgs(on) requirements against their supply rail and ensure sufficient gate drive voltage—ideally ≥5V or 10V—to achieve the lowest possible on-resistance and maintain efficiency.
In what scenarios would using the 2SK583-MTK-AA in parallel improve current sharing compared to a single-device solution?
Parallel operation of the 2SK583-MTK-AA can be beneficial when total load current exceeds the safe operating area (SOA) or continuous drain current rating of a single unit. However, due to manufacturing variations in threshold voltage and Rds(on), passive current sharing is unreliable without external balancing components such as source resistors or active drivers. Without such measures, one device may dominate the current flow, leading to localized heating and potential failure. Therefore, paralleling should only be considered after thorough characterization of device matching and inclusion of thermal feedback mechanisms.
How does the 2SK583-MTK-AA compare to modern trench MOSFETs like the Si7460DP in terms of switching speed and conduction loss at 5A continuous load?
The 2SK583-MTK-AA is a planar-processed N-channel MOSFET, which generally results in higher gate charge (Qg) and longer switching times compared to advanced trench-type devices like the Si7460DP from Vishay. At 5A, the 2SK583 typically exhibits Rds(on) around 0.3–0.4Ω, whereas the Si7460DP achieves sub-0.02Ω resistance under similar conditions. This translates into roughly tenfold lower conduction losses for the newer device. Additionally, the Si7460DP offers superior Eoff energy dissipation, making it more efficient in PWM applications above several hundred kHz. The 2SK583 remains suitable for low-frequency, low-cost designs but becomes inefficient at higher frequencies or higher currents.
What precautions are necessary when driving the gate of the 2SK583-MTK-AA to prevent false triggering in noisy industrial environments?
Due to its relatively low gate threshold and lack of integrated protection, the 2SK583-MTK-AA is susceptible to parasitic turn-on from inductive kickback or electrostatic discharge (ESD). To mitigate risk, a negative bias must be applied during shutdown if the source is not fully referenced to ground. Alternatively, a gate-source resistor (e.g., 10kΩ) can pull the gate low when the driver is off. Snubber networks across the drain-source terminals or TVS diodes rated for transient suppression also help clamp voltage spikes. Furthermore, minimizing loop area in gate traces reduces susceptibility to electromagnetic interference.
Can the 2SK583-MTK-AA safely handle inductive loads such as relays or motors without additional protection circuitry?
The 2SK583-MTK-AA lacks built-in body diode reverse recovery protection, and while it can conduct flyback current through its internal diode, repeated inductive switching without clamping leads to excessive voltage overshoot. This can exceed the breakdown voltage (V(BR)DSS) of approximately 100V, potentially causing avalanche-induced failure. Therefore, a freewheeling diode or Schottky clamp across the load, along with a RC snubber network, is strongly recommended. In high-inductance applications, consider using a dedicated MOSFET with intrinsic Zener clamping or opt for a device explicitly rated for inductive switching duty.
What are the key limitations of the 2SK583-MTK-AA in high-side switch configurations compared to dedicated P-channel alternatives?
When used as a high-side switch, the 2SK583-MTK-aa requires a bootstrap circuit or charge pump to generate a gate voltage above the source, complicating control logic and reducing efficiency. Its high gate capacitance and moderate transconductance necessitate stronger drive strength, often requiring discrete NPN/PNP buffers or dedicated half-bridge controllers. In contrast, modern P-channel MOSFETs offer simpler gate drive requirements and better symmetry in bidirectional applications. For low-voltage, low-current high-side switching, alternatives with integrated drivers or logic-level enhancement provide superior ease-of-use and reliability.
How does moisture sensitivity level (MSL) classification impact storage and handling of bulk-packaged 2SK583-MTK-AA units?
Classified as MSL 1, the 2SK583-MTK-AA has unlimited floor life at ≤30°C/60% RH, meaning it does not require bake-out before reflow soldering under normal ambient conditions. This simplifies inventory management and reduces processing steps for most assembly facilities. However, prolonged exposure to humid environments prior to sealing may still introduce minor risks; therefore, conformal coating or moisture-barrier packaging is advisable in corrosive or high-humidity production zones. No special handling labels (e.g., humidity indicator cards) are mandated beyond standard ESD precautions.
Is the 2SK583-MTK-AA suitable for use in solar microinverters requiring >90% efficiency at partial load?
Given its relatively high Rds(on) and elevated gate charge, the 2SK583-MTK-AA is unlikely to meet >90% efficiency targets in modern photovoltaic string converters, particularly at light-load conditions where conduction losses dominate. Advanced synchronous rectification designs now employ trench-based MOSFETs with <10mΩ Rds(on) and ultra-low Qg/Qrr to minimize switching and conduction losses across wide current ranges. The 2SK583’s older fabrication process lacks these optimizations, resulting in higher EMI emissions and reduced system-level efficiency. It may serve as a cost-reduced option in very small-scale inverters but not in competitive commercial modules.
What role does the absence of RoHS compliance play in selecting the 2SK583-MTK-AA for consumer electronics projects?
Although the RoHS status is listed as "Not applicable," this typically indicates either legacy production status or exemption under specific clauses (e.g., Pb-free exemptions for certain leadframe types). Nevertheless, reliance on non-RoHS components introduces regulatory risk in final products targeting global markets like Europe or Japan. OEMs sourcing the 2SK583-MTK-AA for end-use consumer devices must confirm whether their supply chain accepts restricted substances above permitted thresholds. Using this part without explicit exemption documentation may violate WEEE or RoHS directives, exposing manufacturers to fines or market withdrawal.
How does the base product number 2SK583 relate to the 2SK583-MTK-AA variant, and what design differences justify the MTK-AA suffix?
The 2SK583 is the core part number denoting a general-purpose N-channel MOSFET, while the MTK-AA suffix specifies a particular configuration within onsemi’s product family. Suffixes like MTK often denote revised die layout, improved Rds(on), or updated packaging orientation. The AA may indicate enhanced avalanche ruggedness or modified test criteria compared to earlier revisions. Though not always detailed in public documentation, such variants are common in semiconductor manufacturing to distinguish yield-optimized or application-tailored versions without changing the base identifier. Designers should consult latest revision notes to confirm performance improvements over predecessor models.
What considerations apply when replacing the 2SK583-MTK-AA in legacy designs with modern equivalents?
Direct replacement requires matching key parameters: V(BR)DSS ≈ 100V, Id ≥ 5A, and Rds(on) ≤ 0.4Ω. However, newer devices often have lower gate threshold, reduced gate charge, and improved SOA curves. Layout parasitics—especially gate inductance and source bond wire impedance—can negate theoretical advantages if not addressed. Thermal pad design must accommodate equivalent power dissipation, and gate drive circuits should be evaluated for compatibility with lower Vgs requirements. Always simulate switching waveforms and measure real-world efficiency under worst-case loads before declaring interchangeability.
Does the 2SK583-MTK-AA support avalanche energy handling, and what are the practical limits for repetitive surge events?
Limited data exists on avalanche capability for the 2SK583-MTK-AA, but planar MOSFETs of this class typically exhibit limited unclamped inductive switching (UIS) energy unless specifically qualified. Repetitive avalanche events degrade gate oxide integrity over time, leading to premature failure even below absolute maximum ratings. If UIS operation is required, external clamping or soft-switching techniques should be employed instead of relying on device avalanche response. For critical applications, select a part with published UIS test results and verified EAS ratings.
What are the implications of using the 2SK583-MTK-AA in battery-powered systems where quiescent current is critical?
While the 2SK583-MTK-AA itself consumes no static power when off, its gate capacitance and leakage current contribute negligibly to standby drain. However, the need for continuous gate drive (via pull-down resistor or active driver) introduces fixed power consumption. In ultra-low-power systems (e.g., IoT sensors), this overhead may be significant relative to main load savings. Moreover, slower turn-off due to higher Qg increases dead-time requirements in H-bridge topologies, further reducing effective efficiency. Alternatives with lower gate charge or integrated sleep modes offer better suitability for energy-constrained designs.
How should PCB layout influence the selection of gate drive components when interfacing with the 2SK583-MTK-AA?
The 2SK583-MTK-AA’s gate capacitance is sensitive to parasitic inductance in the gate path. Long traces or poor grounding increase turn-on delay and ringing, exacerbating EMI and shoot-through risks in synchronous converters. To minimize this, place gate driver ICs close to the device, use short Kelvin connections, and ensure low-impedance return paths. Decoupling capacitors near the gate pin help stabilize voltage during transitions. Poor layout can effectively double apparent Rds(on) and halve switching frequency capability, undermining the benefits of even the best component choice.
Are there any known trade-offs between switching speed and thermal performance when optimizing the 2SK583-MTK-AA for PWM dimming LEDs?
Yes. Reducing dead time by pushing switching edges faster increases di/dt and dv/dt, raising electromagnetic interference and stress on surrounding components. Conversely, slowing down transitions lowers EMI but increases switching losses, which manifest as heat in both the MOSFET and adjacent passive elements. Since the 2SK583 lacks integrated thermal feedback, precise optimization requires empirical measurement of junction temperature under actual load profiles. Most LED drivers balance these factors using adaptive gate timing or variable frequency modulation rather than relying solely on the transistor’s inherent characteristics.
What documentation gaps exist regarding the 2SK583-MTK-AA that could impact long-term reliability assessment?
Publicly available data lacks detailed information on secondary breakdown limits, aging effects, or accelerated life test results. Without parametric drift specifications or FIT rates, predicting field failure rates over 10+ years is challenging. Additionally, absence of PSpice models or IBIS equivalents hampers simulation accuracy in complex power stages. Designers must assume conservative derating margins—particularly for Vgs and Id—and validate thermal cycling performance through accelerated environmental testing if long service life is expected.
How does the ECCN classification (EAR99) affect international procurement and export controls involving the 2SK583-MTK-AA?
Classified as EAR99, the 2SK583-MTK-AA falls under U.S. Export Administration Regulations as a commodity subject to minimal controls. Most countries do not require export licenses for shipments under standard commercial quantities, simplifying global sourcing. However, exporters must still complete proper classification paperwork and ensure end-use transparency to avoid compliance issues. Some jurisdictions impose additional restrictions based on dual-use potential, so due diligence is advised when supplying defense contractors or research institutions in regulated territories.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi 2SK583-MTK-AA

Product Attribute 2SK583-MTK-AA 2SK579 MOS 2SK596C-SPA 2SK591
Part Number 2SK583-MTK-AA 2SK579 MOS 2SK596C-SPA 2SK591
Manufacturer onsemi Renesas Electronics Corporation NEC
Series * - - -
Technology - - - -
FET Feature - - - -
Base Product Number 2SK583 - - -
Package Bulk - - -

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Region Country Logistic Time(Day)
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Brazil 7
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New Zealand 5
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DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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onsemi

2SK583-MTK-AA

onsemi
32D-2SK583-MTK-AA

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