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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleFCMT199N60
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FCMT199N60 - onsemi

Manufacturer Part Number
FCMT199N60
Manufacturer
onsemi
Allelco Part Number
32D-FCMT199N60
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
11,864 pcs available, New & Original
Parts Description
MOSFET N-CH 600V 20.2A POWER88
Package
Power88
Data sheet
FCMT199N60.pdf

Datasheets

FCMT199N60.pdf

Environmental Information

onsemi REACH.pdf onsemi RoHS.pdf

PCN Design/Specification

Logo 17/Aug/2017.pdf

PCN Assembly/Origin

FCMTx99N60 17/Nov/2022.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 11864
  • Unit Price: $3.397
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $3.397 $3.40
10+ $2.99 $29.90
30+ $2.529 $75.87
100+ $2.284 $228.40
500+ $2.171 $1,085.50
1000+ $2.12 $2,120.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

FCMT199N60 Tech Specifications
onsemi - FCMT199N60 technical specifications, attributes, parameters and parts with similar specifications to onsemi - FCMT199N60

Product Attribute Attribute Value
Manufacturer onsemi
Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package Power88
Series SuperFET® II
Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V
Power Dissipation (Max) 208W (Tc)
Package / Case 4-PowerTSFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Base Product Number FCMT199

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

FCMT199N60 Image
FCMT199N60 (1)

Manufacturer Part Number

FCMT199N60

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Mounting

SuperFET II Series

N-Channel MOSFET

Drain to Source Voltage (Vdss): 600 V

Gate-Source Voltage (Vgs) (Max): ±20 V

Drain-Source On-Resistance (Rds On) (Max) @ 10A, 10V: 199 mOhm

Continuous Drain Current (Id) @ 25°C: 20.2 A

Input Capacitance (Ciss) (Max) @ 100 V: 2950 pF

Power Dissipation (Max) @ Tc: 208 W

Threshold Voltage (Vgs(th)) (Max) @ 250 A: 3.5 V

Gate Charge (Qg) (Max) @ 10 V: 74 nC

Operating Temperature: -55°C to 150°C

Product Advantages

High voltage capability

Low on-resistance

High current rating

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 600 V

Gate-Source Voltage (Vgs) (Max): ±20 V

Drain-Source On-Resistance (Rds On) (Max): 199 mOhm

Continuous Drain Current (Id): 20.2 A

Power Dissipation (Max): 208 W

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting

Application Areas

Industrial

Power Supplies

Motor Drives

Inverters

Product Lifecycle

Current product, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

High voltage and current capability

Low on-resistance for efficiency

Compact surface mount package

Proven reliability and performance in industrial applications

Frequently Asked Questions(FAQ)

What are the key thermal performance considerations when using the FCMT199N60 in a high-power switching application, and how does its Power88 package influence junction-to-case thermal resistance?
The FCMT199N60 delivers 208W of continuous power dissipation at the case temperature, which directly impacts thermal management design. With a surface-mount Power88 package featuring a thermally enhanced exposed pad, it provides significantly improved heat spreading compared to standard SMD packages. This allows more efficient conduction to the PCB copper plane, reducing overall thermal resistance from junction to ambient. Engineers must ensure adequate copper area and thermal vias beneath the device to maintain junction temperature below 150°C, especially during sustained operation at high current levels such as 20A.
How does the FCMT199N60 compare to alternative MOSFETs like the IPL60R185P7AUMA1 in terms of on-resistance and gate charge, and what implications do these differences have for efficiency in hard-switching topologies?
The FCMT199N60 offers an Rds(on) of 199mΩ at Vgs=10V and Id=10A, slightly higher than the IPL60R185P7AUMA1’s 185mΩ under similar conditions. However, the FCMT199N60 features a lower gate charge of 74nC at 10V compared to approximately 110nC for the P7 variant, resulting in faster switching transitions. This combination reduces switching losses in hard-switching applications such as resonant converters or motor drives, where both conduction and switching losses contribute significantly to total power loss. The trade-off favors the FCMT199N60 when optimizing for fast switching with moderate conduction loss tolerance.
What drive voltage requirements should be considered when selecting a gate driver IC to operate the FCMT199N60 reliably across its full operating range?
The FCMT199N60 specifies a maximum Rds(on) of 199mΩ at Vgs=10V and Id=10A, indicating that 10V is sufficient to achieve optimal on-state performance. Additionally, the threshold voltage Vgs(th) is specified at 3.5V max for 250µA drain current, meaning the device will begin turning on well below this level. For stable conduction and minimal variation due to threshold drift, a gate drive between 10V and 12V is recommended. A dedicated gate driver capable of sourcing at least 1A peak current is advised to minimize turn-on time and reduce ringing, particularly important given the 74nC gate charge and 2950pF input capacitance.
In what scenarios might the FCMT199N60 be preferred over a traditional TO-220 packaged MOSFET despite its surface-mount form factor?
Although the FCMT199N60 uses a Power88 surface-mount package instead of a through-hole TO-220, it achieves superior thermal performance per unit volume due to enhanced internal die attachment and direct bonding to the exposed pad. At 208W dissipation capacity, it matches or exceeds many TO-220 devices in continuous power handling when properly mounted on a thermally optimized PCB. It is ideal for space-constrained designs such as industrial inverters, solar microinverters, or battery chargers where board-level integration and automated assembly justify the use of advanced packaging over legacy through-hole solutions.
What impact does the 2950pF input capacitance (Ciss) of the FCMT199N60 have on switching speed and electromagnetic interference in high-frequency PWM applications?
With Ciss(max) = 2950pF at Vds=100V, the FCMT199N60 exhibits moderate input capacitance typical of 600V SuperFET® II devices. This capacitance forms a time constant with gate resistance and driver impedance, influencing turn-on and turn-off speeds. While not excessive, it still necessitates low-impedance gate drive paths to avoid slow transitions that increase switching losses and EMI emissions. Proper layout with short traces, low-inductance bypass capacitors near the source, and controlled gate resistance can mitigate ringing and ensure clean switching edges, preserving system reliability in frequencies above 50kHz.
How does the FCMT199N60’s gate charge profile affect dead-time control in synchronous buck converter designs?
The FCMT199N60 has a gate charge Qg(max) of 74nC at Vgs=10V, which determines how quickly the gate voltage rises and falls. In synchronous buck converters, accurate dead time prevents shoot-through by ensuring one FET turns off fully before the other turns on. Given the moderate gate charge and input capacitance, the turn-off delay is relatively short, allowing tighter dead-time margins. However, precise measurement using a differential probe or oscilloscope is required to account for Miller plateau effects during turn-off, especially when driving complementary FETs with similar characteristics.
What are the implications of the FCMT199N60’s Moisture Sensitivity Level (MSL) rating of 1 for manufacturing and storage in high-humidity environments?
With an MSL of 1, the FCMT199N60 is classified as moisture-insensitive and can withstand unlimited exposure to ambient humidity without requiring bake-out before reflow soldering. This simplifies supply chain logistics and reduces processing steps in SMT lines, making it suitable for high-volume production environments where inventory turnover may expose components to varying atmospheric conditions. No special handling beyond standard ESD precautions is required throughout storage and assembly.
Can the FCMT199N60 be used interchangeably with substitute parts like IPL60R185CFD7AUMA1 in a design without recalculating thermal and electrical margins?
While the FCMT199N60 and substitutes such as IPL60R185CFD7AUMA1 share similar voltage ratings and package types, their Rds(on), gate charge, and thermal performance may differ slightly. The FCMT199N60’s 199mΩ Rds(on) versus potentially lower values in some substitutes means conduction losses could vary by up to 10–15% depending on exact part behavior. Thermal derating curves also depend on internal construction. Therefore, substitution should only occur after verifying compatibility with worst-case load conditions and confirming that junction temperatures remain within limits under full operational duty cycles.
What role does the Power88 package play in enabling high-density power module designs compared to older-generation packages?
The Power88 package integrates a thermally conductive exposed pad into a compact surface-mount footprint, allowing direct mounting to metal-core PCBs or heatsinks. Its 4-pin configuration supports Kelvin connections for gate sensing if needed, while the large copper pad enhances heat extraction. This enables higher power density than traditional packages like TO-263 or SO-8 by reducing thermal bottlenecks and improving solder joint reliability. Designs leveraging the FCMT199N60 benefit from reduced footprint and improved thermal cycling performance in automotive or industrial systems subject to wide temperature swings.
How does the -55°C to 150°C junction temperature range of the FCMT199N60 support operation in harsh environments such as downhole instrumentation or aerospace systems?
The wide operating temperature span ensures the FCMT199N60 remains functional under extreme thermal stress without degradation. Unlike commercial-grade devices limited to 105°C, this automotive- or industrial-grade rating allows deployment in applications where localized heating from nearby components or external environmental factors push ambient temperatures beyond normal ranges. As long as proper thermal management maintains case temperature below thresholds, the device can sustain 20A drain current continuously even in cold-start or high-heat soak conditions, enhancing system robustness in mission-critical environments.
What are the key differences between the FCMT199N60 and a standard logic-level MOSFET in terms of drive requirements and switching behavior?
The FCMT199N60 requires a Vgs of at least 10V to achieve its rated Rds(on) of 199mΩ, unlike logic-level MOSFETs that typically saturate at 4.5V–5V. This means it cannot be driven directly from 3.3V or 5V logic without risking high conduction losses. Additionally, its gate charge and input capacitance are higher than those of low-voltage logic devices, leading to slower switching unless compensated with active gate drivers. Therefore, it is better suited for medium-voltage applications where voltage isolation or step-up drive circuits are acceptable, rather than low-voltage digital control systems.
What considerations apply when paralleling multiple FCMT199N60 devices to increase current capacity in high-load applications?
Paralleling the FCMT199N60 requires careful attention to gate drive symmetry, layout inductance, and thermal coupling. Due to slight mismatches in Rds(on) and threshold voltage, one device may conduct more current initially, leading to thermal runaway if not balanced. Using identical gate resistors and minimizing loop area improves current sharing. Thermal vias should connect all units to a common heatsink or ground plane to equalize temperature. Simulation or empirical testing under worst-case conditions is essential to validate stability and ensure no single device exceeds its 20.2A Tc rating during transient events.
How does the FCMT199N60’s Rds(on) variation with temperature affect system-level efficiency over a wide operating range?
The FCMT199N60’s Rds(on) increases with rising junction temperature due to semiconductor mobility reduction. At 150°C, Rds(on) may rise by 20–30% compared to 25°C values. This negatively impacts efficiency in high-temperature environments, especially in continuous conduction modes. Designers must account for this degradation when calculating total losses, as higher Rds(on) leads to greater I²R losses and increased self-heating. Thermal feedback loops or derating curves should be incorporated into control algorithms to maintain performance predictability across the full -55°C to 150°C range.
What are the benefits of using the FCMT199N60 in resonant converter topologies such as LLC or ZVS converters?
In resonant converters, soft switching reduces voltage-current overlap during transitions, lowering switching losses. The FCMT199N60’s low gate charge (74nC) and moderate input capacitance enable fast response times, helping maintain zero-voltage switching (ZVS) conditions. Its 600V rating accommodates peak voltages in resonant tank circuits, while the low Rds(on) minimizes conduction losses during on-phases. Combined with the Power88 package’s thermal advantages, it supports higher switching frequencies (>100kHz) without significant efficiency drop, improving power density and reducing passive component size.
Why might an engineer choose the FCMT199N60 over a trench-type MOSFET with comparable specs in a high-reliability industrial application?
The FCMT199N60 uses onsemi’s SuperFET® II technology, which employs a planar structure optimized for high voltage blocking and low leakage. Compared to trench-type MOSFETs, planar devices often exhibit better avalanche energy capability and lower gate oxide stress under repetitive switching. While trench devices usually offer lower Rds(on), the FCMT199N60 balances performance with ruggedness, making it suitable for fault-tolerant designs where reliability under surge or short-circuit conditions outweighs marginal gains in on-resistance. Its proven track record in industrial power supplies further supports selection for long-life installations.
How does the RoHS3 compliance of the FCMT199N60 influence procurement strategy in regulated markets like the EU or California?
RoHS3 compliance ensures the FCMT199N60 meets updated restrictions on hazardous substances including lead, mercury, cadmium, and certain phthalates, plus new limits on DEHP, BBP, DBP, and DIBP. This eliminates regulatory risk in consumer and industrial electronics sold in Europe and California, simplifying global certification processes. Suppliers offering RoHS3 documentation provide assurance of full chemical compliance, avoiding delays during customs clearance or end-product audits. For OEMs targeting multiple jurisdictions, using RoHS3-compliant parts like the FCMT199N60 streamlines supply chain validation and reduces legal exposure.
What design precautions are necessary to prevent false triggering of the FCMT199N60 during rapid voltage transients in switch-mode power supplies?
Although the FCMT199N60 has a ±20V absolute maximum gate-source voltage rating, fast dv/dt on the drain side can couple noise onto the gate via parasitic capacitances, potentially causing unintended turn-on. To prevent this, gate-source terminals should be protected with Zener diodes (e.g., 15V clamp) or RC snubbers. Layout practices—such as minimizing gate trace length, separating high-dV/dt nodes, and grounding the source directly under the device—are critical. Additionally, using negative gate bias during shutdown can enhance immunity by pulling the gate below threshold, ensuring robust operation in noisy environments like motor drives or telecom rectifiers.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi FCMT199N60

Product Attribute FCMT299N60 FCMT180N65S3 FCMT080N65S3 FCMT360N65S3
Part Number FCMT299N60 FCMT180N65S3 FCMT080N65S3 FCMT360N65S3
Manufacturer onsemi onsemi onsemi onsemi
Current - Continuous Drain (Id) @ 25°C - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Technology - - - -
Power Dissipation (Max) - - - -
Rds On (Max) @ Id, Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
FET Feature - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Base Product Number - DAC34H84 MAX500 ADS62P42
FET Type - - - -
Vgs(th) (Max) @ Id - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Drain to Source Voltage (Vdss) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Vgs (Max) - - - -
Series - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)

FCMT199N60 Datasheet PDF

Download FCMT199N60 pdf datasheets and onsemi documentation for FCMT199N60 - onsemi.

Datasheets
FCMT199N60.pdf
Environmental Information
onsemi REACH.pdf onsemi RoHS.pdf
PCN Design/Specification
Logo 17/Aug/2017.pdf
PCN Assembly/Origin
FCMTx99N60 17/Nov/2022.pdf
PCN Packaging
Mult Devices 24/Oct/2017.pdf

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Evaluation: 10 Articles

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    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

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    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

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  • Emil***rperTech
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  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
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    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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FCMT199N60 Image

FCMT199N60

onsemi
32D-FCMT199N60

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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