Manufacturer Part Number
MMBFJ111
Manufacturer
onsemi
Introduction
The MMBFJ111 is an N-Channel JFET transistor designed for high-performance switching applications, packaged in a SOT-23-3 format ideal for surface mount technology.
Product Features and Performance
N-Channel FET
Voltage - Breakdown: 35 V
Current - Drain (Idss): 20 mA @ 15 V
Voltage - Cutoff (VGS off): 3 V @ 1 µA
Resistance - RDS(On): 30 Ohms
Power - Max: 350 mW
Operating Temperature Range: -55°C to 150°C
Product Advantages
High breakdown voltage
Low cutoff voltage for effective power management
Low on-state resistance enhancing efficiency
High maximum power capacity
Operates effectively across a wide temperature range
Key Technical Parameters
Breakdown Voltage: 35 V
Drain Current: 20 mA @ 15 V
Cutoff Voltage: 3 V @ 1 µA
On-Resistance: 30 Ohms
Maximum Power: 350 mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Designed for robust performance across extreme temperature conditions
Compatibility
Compatible with surface mount technology
Package Type: SOT-23-3
Application Areas
Switching applications
Power management systems
Product Lifecycle
The product status is active, with ongoing production and availability.
Several Key Reasons to Choose This Product
High breakdown voltage facilitates reliable switching performance
Low power consumption due to efficient cutoff voltage specification
Robust physical and thermal design ensures performance across a broad temperature range
Surface mount compatibility allows easy integration into existing designs
Active product lifecycle ensures continuous availability and support
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