Data sheet: NTD5867NL-1G.pdf

Datasheets
NTD5867NL.pdf

Environmental Information
onsemi RoHS.pdf

PCN Obsolescence/ EOL
Multiple Devices 05/Apr/2014.pdf

RoHs Status

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Specifications

NTD5867NL-1G Tech Specifications
onsemi - NTD5867NL-1G technical specifications, attributes, parameters and parts with similar specifications to onsemi - NTD5867NL-1G

Product Attribute	Attribute Value
Manufacturer	onsemi
Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	I-PAK
Series	-
Rds On (Max) @ Id, Vgs	39mOhm @ 10A, 10V
Power Dissipation (Max)	36W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Package	Tube

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Input Capacitance (Ciss) (Max) @ Vds	675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Base Product Number	NTD58

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical performance characteristics of the NTD5867NL-1G MOSFET that influence its suitability for high-current switching applications?: The NTD5867NL-1G is a 60 V, 20 A N-channel MOSFET with a maximum continuous drain current of 20 A (at Tc) and a total power dissipation capability of 36 W under heatsink conditions. Its on-resistance at 10 V gate-source voltage is 39 mΩ when conducting 10 A, which minimizes conduction losses in low-voltage, high-current scenarios such as motor drives or synchronous rectification. With a junction-to-case thermal resistance implied by the 36 W rating and TO-251/IPAK packaging, thermal management must be considered for sustained loads near 20 A. The device’s gate charge (Qg) of 15 nC at 10 V enables relatively fast switching, reducing dynamic losses in PWM applications. These parameters collectively suggest strong performance in intermediate-duty-cycle power conversion circuits where efficiency and thermal control are critical.

How does the gate drive requirement of the NTD5867NL-1G compare to other commonly used N-channel MOSFETs in the same voltage and current class?: The NTD5867NL-1G specifies a maximum threshold voltage (Vgs(th)) of 2.5 V at 250 µA, indicating it can begin conduction at low gate voltages, but its Rds(on) reaches 39 mΩ only when driven with 10 V across the gate and source. This places its optimal drive condition in the 10 V range, which is typical for logic-level or standard gate-drive ICs. Compared to some logic-level MOSFETs that achieve low Rds(on) at 4.5 V, the NTD5867NL-1G requires higher gate drive to minimize on-state losses. However, it outperforms many older-generation devices in the same 60 V, 20 A segment that may have Rds(on) values exceeding 50–60 mΩ even at 10 V. Thus, while not ideal for ultra-low-voltage microcontrollers without level shifting, it offers competitive performance when paired with appropriate gate drivers.

What design considerations should be made when replacing the NTD5867NL-1G in an existing circuit, particularly regarding pin compatibility and layout constraints?: The NTD5867NL-1G uses an IPAK package (TO-251AA), which features short leads compared to standard TO-220 variants. This reduces lead inductance and improves high-frequency performance, making it suitable for switching applications. However, mechanical compatibility must be verified: the footprint differs from TO-220 in terms of tab attachment and lead spacing. While the base product NTD58 shares a common die, the -1G suffix indicates specific screening or packaging variation, so substitution should confirm both electrical continuity and physical fit within the PCB assembly. Thermal vias and pad design must accommodate the smaller footprint to ensure efficient heat transfer from the tab to the board or heatsink.

Can the NTD5867NL-1G safely operate in environments with intermittent overloads or transient currents beyond its rated 20 A continuous drain current?: Yes, but with caution. The device is rated for 20 A continuous at 25°C case temperature, assuming adequate heatsinking. Transient overloads—such as those encountered during motor startup or inductive load switching—can exceed this value temporarily without immediate failure due to the device’s thermal mass and avalanche ruggedness implied by its robust packaging. However, repeated excursions into overload regions without sufficient cooling may elevate junction temperatures beyond safe limits, accelerating degradation. For applications involving pulsed operation above 20 A, derating curves and thermal impedance models should be consulted to estimate allowable pulse duration and duty cycle based on ambient temperature and heatsink performance.

How does the input capacitance (Ciss) of the NTD5867NL-1G affect switching behavior in high-frequency switching converters?: The NTD5867NL-1G has a maximum input capacitance (Ciss) of 675 pF measured at 25 V drain-source voltage. This capacitance, combined with the 15 nC gate charge, defines the gate driver’s current demand during turn-on and turn-off transitions. At switching frequencies above 100 kHz, this results in significant dynamic power loss in the gate driver stage, potentially limiting efficiency if not compensated with low-impedance drive circuitry. In resonant topologies or hard-switched converters operating at several hundred kHz, the capacitive load increases switching stress and may require active gate driving techniques to maintain speed and reduce shoot-through risks. Designers should calculate gate drive power as P_gate = f_sw × Qg × Vgs_drive to assess compatibility with available driver ICs.

What are the implications of the NTD5867NL-1G’s maximum junction temperature (150°C) for long-term reliability in industrial versus automotive environments?: The NTD5867NL-1G is specified for operation up to 150°C junction temperature, which supports use in industrial-grade applications but falls short of AEC-Q101 qualification thresholds typically required for full automotive compliance. In industrial systems with controlled ambient temperatures (e.g., <85°C), the device can sustain near-rated currents reliably over years. However, in high-heat environments or enclosed designs with poor airflow, internal heating may push the junction above 100°C even at moderate load levels, accelerating electromigration and reducing mean time between failures. For automotive or consumer electronics where thermal cycling and elevated ambient temperatures are expected, additional margin should be applied, possibly through lower continuous current operation or enhanced cooling solutions.

Is the NTD5867NL-1G suitable for use in synchronous buck converters, and what trade-offs exist compared to alternative MOSFETs with lower Rds(on)?: Yes, the NTD5867NL-1G is well-suited for synchronous buck converters due to its low Rds(on) of 39 mΩ at 10 V, which reduces conduction losses in the low-side switch. When compared to newer generation MOSFETs with Rds(on) values below 30 mΩ, the NTD5867NL-1G offers a balance of cost, availability, and ease of implementation. However, its higher Rds(on) means slightly lower efficiency at light loads unless paralleled or replaced with more advanced devices. Additionally, its gate charge and input capacitance are moderate, allowing reasonable switching speeds without excessive drive complexity. In designs targeting 20 A output with 12 V input and moderate frequency (e.g., 300–500 kHz), the NTD5867NL-1G provides a reliable, off-the-shelf solution with acceptable losses and thermal performance.

How does the Moisture Sensitivity Level (MSL) classification of the NTD5867NL-1G impact manufacturing handling and storage protocols?: The NTD5867NL-1G is classified as MSL 1, meaning it is moisture-insensitive and can withstand unlimited exposure to ambient humidity prior to reflow soldering without requiring baking. This simplifies procurement, storage, and assembly logistics, especially in high-volume production environments where inventory turnover is frequent. Manufacturers can handle and store the components without special climate-controlled bins or pre-drying procedures, reducing cost and risk of moisture-related defects during wave or reflow soldering. This characteristic aligns well with standard SMT and mixed-technology assembly flows and enhances supply chain flexibility for engineers designing with the NTD5867NL-1G.

What precautions should be taken when using the NTD5867NL-1G in parallel configurations to achieve higher current sharing?: Parallel operation of the NTD5867NL-1G requires careful attention to layout symmetry and gate drive matching. Due to manufacturing variations in Rds(on) and threshold voltage, individual devices may not share current equally, leading to thermal runaway in the least favorable unit. To mitigate this, traces from each source terminal should be matched in length and impedance, and gate resistors should be included to dampen oscillations and balance turn-on/turn-off timing. A small ballast resistor (e.g., 0.1–1 Ω) per source leg can improve current sharing but adds conduction loss. Simulation using SPICE models with process corners is recommended to validate stability before prototype build. The TO-251/IPAK’s compact form helps reduce mismatch but does not eliminate it entirely.

What role does the gate-source voltage tolerance (±20 V) play in protecting the NTD5867NL-1G during circuit transients?: The ±20 V maximum gate-source voltage rating protects the NTD5867NL-1G from electrostatic discharge (ESD) events and accidental overvoltage conditions in the gate control loop. This allows the use of standard gate drive circuits without additional clamping diodes in most non-inductive environments. However, in inductive load switching (e.g., relay coils or transformer windings), back EMF can generate negative spikes on the gate line. If these exceed -20 V, the oxide layer may degrade over time. Therefore, even though the part is robust, transient voltage suppressors (TVS) or zener clamps are advisable in harsh environments to preserve long-term gate integrity and prevent premature failure.

How does the NTD5867NL-1G perform in terms of reverse recovery characteristics when used in freewheeling diode replacement applications?: Since the NTD5867NL-1G is a unipolar N-channel MOSFET, it does not have intrinsic body diode reverse recovery issues like bipolar devices. However, when used in synchronous rectification or as a freewheeling path, the parasitic diode formed by the substrate and source still conducts during dead time. The forward voltage drop of this diode (typically ~0.8–1.2 V) contributes to conduction loss. Unlike Schottky-based solutions, there is no soft recovery, so rapid commutation can induce ringing due to LC interactions with the package inductance. In high-frequency flyback or boost converters, this may necessitate snubbing networks or selection of alternative topologies to minimize EMI and switching stress.

What are the advantages of using the NTD5867NL-1G over surface-mount alternatives in high-reliability through-hole designs?: The NTD5867NL-1G’s TO-251/IPAK package offers superior thermal conductivity and mechanical robustness compared to smaller surface-mount packages like LFPAK or PowerPAK. Its exposed tab allows direct attachment to a copper plane or heatsink, enhancing thermal performance and enabling longer operational life under sustained loads. For applications requiring vibration resistance or manual servicing, through-hole mounting provides better strain relief than SMD parts. Additionally, the IPAK form factor maintains compatibility with legacy tooling and test fixtures, reducing redesign effort in industrial or military systems where reliability outweighs space savings. The NTD5867NL-1G thus serves as a bridge between traditional and modern packaging paradigms.

How does the absence of lead-free marking or RoHS exemption status affect the use of the NTD5867NL-1G in global supply chains?: The NTD5867NL-1G complies with REACH and ECCN EAR99 regulations, indicating unrestricted export and use in most countries. Its lack of specific RoHS exemption suggests it meets all six restricted substances limits (lead, mercury, cadmium, etc.), facilitating integration into lead-free manufacturing processes without legal or compliance barriers. This simplifies global sourcing and avoids delays associated with export licenses or customs scrutiny. Engineers selecting the NTD5867NL-1G can confidently deploy it in commercial, industrial, or consumer products targeting international markets, knowing it aligns with standard environmental and safety standards without requiring special documentation or substitutions.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi NTD5867NL-1G

Product Attribute
Part Number	NTD5865NL-1G	NTD5867NLT4G	NTD5865N-1G	NTD5865NLT4G
Manufacturer	onsemi	onsemi	onsemi	onsemi
FET Type	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Vgs (Max)	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
FET Feature	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Technology	-	-	-	-
Series	-	-	-	-

NTD5867NL-1G Datasheet PDF

Download NTD5867NL-1G pdf datasheets and onsemi documentation for NTD5867NL-1G - onsemi.

Datasheets: NTD5867NL.pdf
Environmental Information: onsemi RoHS.pdf
PCN Obsolescence/ EOL: Multiple Devices 05/Apr/2014.pdf

Customers Also Interested in

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Customer Reviews

Evaluation: 10 Articles

Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.
Yuki***aka88

May 26, 2026

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。
Stev***aker

May 20, 2026

Solid diode for power rectification. Works well in switching circuits.
Bran***Lewis

May 11, 2026

Compact FPGA with good performance. Suitable for basic signal processing tasks.
Oliv***arris

May 7, 2026

Reliable I/O expander. Works well in embedded control applications.
Jess***Jones

Apr 17, 2026

It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.
Mich***Smith

Apr 17, 2026

Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.
Aman***arris

Apr 3, 2026

It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.
Mike***nch

Apr 3, 2026

Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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NTD5867NL-1G

onsemi
32D-NTD5867NL-1G

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NTD5867NL-1G - onsemi

Specifications

Environmental & Export Classifications

Frequently Asked Questions(FAQ)

Parts with Similar Specifications

NTD5867NL-1G Datasheet PDF

Customers Also Interested in

Recommended Products

Customer Reviews

Evaluation: 10 Articles

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

Solid diode for power rectification. Works well in switching circuits.

Compact FPGA with good performance. Suitable for basic signal processing tasks.

Reliable I/O expander. Works well in embedded control applications.

It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.