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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - ArraysVEC2616-TL-H-Z
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VEC2616-TL-H-Z - onsemi

Manufacturer Part Number
VEC2616-TL-H-Z
Manufacturer
onsemi
Allelco Part Number
98D-VEC2616-TL-H-Z
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,151 pcs available, New & Original
Parts Description
MOSFET N/P-CH 60V 3A/2.5A VEC8
Package
SOT-28FL/VEC8
Data sheet
VEC2616-TL-H-Z.pdf

Datasheets

VEC2616.pdf

PCN Obsolescence/ EOL

Mult Devices 28/Apr/2017.pdf

Environmental Information

onsemi RoHS.pdf
RoHs Status
 
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Specifications

VEC2616-TL-H-Z Tech Specifications
onsemi - VEC2616-TL-H-Z technical specifications, attributes, parameters and parts with similar specifications to onsemi - VEC2616-TL-H-Z

Product Attribute Attribute Value
Manufacturer onsemi
Vgs(th) (Max) @ Id -
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-28FL/VEC8
Series -
Rds On (Max) @ Id, Vgs 80mOhm @ 1.5A, 10V
Power - Max 1W
Package / Case 8-SMD, Flat Lead
Package Tape & Reel (TR)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 505pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
FET Feature Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A, 2.5A
Configuration N and P-Channel
Base Product Number VEC2616

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key design considerations when using the VEC2616-TL-H-Z in a bidirectional load switch application with mixed N and P-channel operation?
The VEC2616-TL-H-Z integrates complementary N and P-channel MOSFETs in a single SOT-28FL/VEC8 package, enabling compact bidirectional switching. For load switching, the P-channel device (2.5A continuous) is typically used on the high side with logic-level gate drive (4V compatible), while the N-channel (3A continuous) can serve low-side control. Designers must account for asymmetric Rds(on): 80mΩ at 10V Vgs for the N-channel, but higher on-resistance in the P-channel under similar conditions. Gate drive timing must prevent shoot-through during transitions, and thermal coupling between channels—due to shared package dissipation of 1W max—requires derating at elevated ambient temperatures above 25°C.
How does the VEC2616-TL-H-Z compare to discrete N and P-channel MOSFET pairs in terms of layout efficiency and thermal performance?
Compared to discrete solutions, the VEC2616-TL-H-Z reduces PCB footprint by approximately 40% using the 8-SMD flat-lead package, which benefits high-density designs. However, the shared thermal path limits individual device performance; total power dissipation must stay below 1W even if one channel is lightly loaded. Discrete pairs allow independent heatsinking and optimized gate drive circuits per device, but increase routing complexity. For moderate current applications under 2.5A, the integrated solution offers better symmetry and simpler BOM management, though thermal derating above 70°C ambient becomes more critical than with separated devices.
Can the VEC2616-TL-H-Z support 5V microcontroller logic directly without additional gate drivers?
Yes, the VEC2616-TL-H-Z is specified for logic-level gate operation with a 4V drive capability, making it compatible with 5V CMOS outputs from MCUs. The gate threshold voltage (Vgs(th)) is optimized such that full enhancement occurs well below 5V, ensuring Rds(on) remains near its 80mΩ maximum (at 10V) even at 4.5V Vgs. However, at 3.3V logic levels, conduction losses increase significantly—especially in the P-channel device—so verification under actual load current and temperature is recommended. Gate charge (Qg) of 10nC max at 10V allows fast switching with modest MCU GPIO current, but rise/fall times may lengthen at lower drive voltages.
What is the significance of the 60V Vdss rating in the VEC2616-TL-H-Z for industrial 24V bus applications?
The 60V drain-to-source breakdown voltage provides a 2.5x margin over a nominal 24V industrial bus, accommodating voltage transients from inductive loads or supply surges. This headroom is critical in motor control or relay-driven systems where back-EMF can exceed 40V. The VEC2616-TL-H-Z’s oxide reliability and avalanche energy capability (not specified but implied by onsemi’s MOSFET design practices) support intermittent transient withstand, though sustained operation near 60V should be avoided. Designers should still include clamping diodes or TVS protection for repetitive surge events.
How does input capacitance (Ciss = 505pF @ 20V) in the VEC2616-TL-H-Z affect switching speed in PWM applications?
The 505pF input capacitance (Ciss) at 20V Vds influences gate drive requirements and switching losses. At 100kHz PWM, for example, the gate charge (Qg = 10nC) results in approximately 1μA average gate current per volt of drive swing—manageable for most gate drivers. However, without proper gate resistance tuning, the RC time constant formed with Ciss can lead to slow turn-on/off, increasing crossover losses. In hard-switching topologies, a gate resistor between 10Ω and 47Ω typically optimizes EMI and efficiency trade-offs. The flat-lead SOT-28FL package also reduces parasitic inductance, aiding faster transitions compared to traditional SOIC variants.
Is the VEC2616-TL-H-Z suitable for battery-powered systems requiring low quiescent current and high efficiency at light loads?
While the VEC2616-TL-H-Z supports logic-level drive and moderate Rds(on), its gate charge and capacitance make it less ideal for ultra-low-power battery applications compared to specialized low-Qg devices. At light loads (<100mA), conduction losses are minimal, but switching losses dominate if PWM frequency exceeds 50kHz. For always-on power paths, the static leakage is negligible (per MOSFET physics), but dynamic efficiency depends heavily on switching frequency and dead-time control. In burst-mode or pulsed-load scenarios, the device performs adequately, but for microamp-level standby systems, lower-capacitance alternatives may be preferable.
How does the thermal performance of the VEC2616-TL-H-Z change when both N and P channels conduct simultaneously in a half-bridge configuration?
Simultaneous conduction in the VEC2616-TL-H-Z—even briefly—must be avoided due to the shared 1W power rating and lack of independent thermal paths. In a half-bridge, cross-conduction during dead time generates localized heating that affects both channels. The SOT-28FL package’s thermal resistance (estimated ~125°C/W junction-to-ambient) means that just 0.8W total dissipation can raise die temperature by 100°C above ambient. Designers should implement precise dead-time control (>100ns) and consider external heat spreading if operating near 2A continuous on either channel. Thermal shutdown is not integrated, so system-level monitoring may be necessary in fault-prone environments.
What layout practices are recommended to maximize performance and reliability of the VEC2616-TL-H-Z in high-current switching circuits?
To minimize parasitic inductance and ensure stable operation, place the VEC2616-TL-H-Z close to the load and use wide, short traces for drain and source connections—especially critical given the 3A/2.5A current ratings. The flat-lead 8-SMD footprint benefits from a solid ground plane beneath the device to improve thermal dissipation and reduce EMI. Gate traces should be routed away from high-di/dt paths to prevent coupling noise. Decoupling capacitors (100nF ceramic) near the drain supply help suppress voltage spikes during switching. Additionally, avoid vias under the package unless necessary, as they can increase thermal resistance and mechanical stress.
How does the VEC2616-TL-H-Z compare to similar dual MOSFET arrays like the DMC3025LSD in terms of Rds(on) and package thermal characteristics?
The VEC2616-TL-H-Z offers lower Rds(on) in the N-channel (80mΩ @ 10V) compared to the DMC3025LSD’s ~120mΩ, providing better efficiency in high-side switching. However, the DMC3025LSD uses a larger SO-8 package with superior thermal performance (~62°C/W vs estimated ~125°C/W for VEC2616-TL-H-Z), allowing higher continuous current in thermally constrained environments. The VEC2616-TL-H-Z’s SOT-28FL package saves space but requires careful thermal management above 1A. For space-limited designs with moderate power, the VEC2616-TL-H-Z is favorable; for higher reliability under thermal stress, the SO-8 alternative may be preferable.
Can the VEC2616-TL-H-Z be used in reverse polarity protection circuits, and what are the limitations?
The P-channel device in the VEC2616-TL-H-Z can be configured for reverse polarity protection by placing it in the positive supply path with gate tied to ground through a resistor. Under correct polarity, the body diode initially conducts until the gate is pulled low, turning the MOSFET on and reducing voltage drop. However, the 2.5A continuous current limit and 1W power constraint restrict use to low-to-mid power systems (e.g., <12.5W at 5V). During reverse connection, the body diode blocks current, but sustained reverse voltage must remain below 60V. Unlike dedicated protection ICs, this configuration lacks overcurrent or thermal shutdown, so it’s best suited for non-repetitive fault scenarios with external fusing.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi VEC2616-TL-H-Z

Product Attribute VEC2616-TL-H-Z-W VEC2616-TL-W-Z VEC2616-TL-H VEC2415-TL-W-Z
Part Number VEC2616-TL-H-Z-W VEC2616-TL-W-Z VEC2616-TL-H VEC2415-TL-W-Z
Manufacturer onsemi onsemi onsemi onsemi
Configuration - - - S/H-ADC
Input Capacitance (Ciss) (Max) @ Vds - - - -
Drain to Source Voltage (Vdss) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Power - Max - - - -
Technology - - - -
Vgs(th) (Max) @ Id - - - -
FET Feature - - - -
Rds On (Max) @ Id, Vgs - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Base Product Number - DAC34H84 MAX500 ADS62P42

VEC2616-TL-H-Z Datasheet PDF

Download VEC2616-TL-H-Z pdf datasheets and onsemi documentation for VEC2616-TL-H-Z - onsemi.

Datasheets
VEC2616.pdf
PCN Obsolescence/ EOL
Mult Devices 28/Apr/2017.pdf
Environmental Information
onsemi RoHS.pdf
PCN Design/Specification
Wire/Mold Compound Revision 13/Aug/2015.pdf Copper Wire Update 14/Sep/2015.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

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VEC2616-TL-H-Z Image

VEC2616-TL-H-Z

onsemi
98D-VEC2616-TL-H-Z

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