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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - SingleCP188-BC546B-WR
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CP188-BC546B-WR - Central Semiconductor Corp

Manufacturer Part Number
CP188-BC546B-WR
Manufacturer
Central Semiconductor
Allelco Part Number
98D-CP188-BC546B-WR
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,567 pcs available, New & Original
Parts Description
TRANS NPN 65V 0.1A DIE
Package
Die
Data sheet
CP188-BC546B-WR.pdf

Environmental Information

RoHS Cert.pdf
RoHs Status
ROHS3 Compliant
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In stock: 4567

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Specifications

CP188-BC546B-WR Tech Specifications
Central Semiconductor Corp - CP188-BC546B-WR technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp - CP188-BC546B-WR

Product Attribute Attribute Value
Manufacturer Central Semiconductor
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Supplier Device Package Die
Series -
Power - Max 500 mW
Package / Case Die
Product Attribute Attribute Value
Package Bulk
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Current - Collector (Ic) (Max) 100 mA

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key electrical characteristics of the CP188-BC546B-WR transistor that make it suitable for low-power switching applications?
The CP188-BC546B-WR offers a collector current of up to 100 mA and a collector-emitter breakdown voltage of 65 V, which provides sufficient headroom for many linear and switching tasks. Its saturation voltage is only 600 mV at 5 mA base drive and 100 mA collector current, meaning minimal power loss across the device when fully on. This low Vce(sat) is critical in battery-powered designs where efficiency directly affects runtime. With a maximum power dissipation of 500 mW, the part can handle brief surges without overheating, though continuous operation near this limit requires thermal management.
How does the CP188-BC546B-WR compare to surface-mount packaged versions of the BC546B in terms of performance and integration complexity?
Unlike traditional SOT-23 or TO-92 packages, the CP188-BC546B-WR is delivered as a die, eliminating lead inductance and package parasitics. This reduces parasitic capacitance and improves high-frequency performance, making it advantageous in precision analog circuits or high-speed signal paths. However, handling and assembly require specialized pick-and-place equipment and wire bonding or flip-chip techniques, increasing manufacturing complexity compared to standard SMT packages. Designers must account for die-level reliability concerns such as electrostatic discharge sensitivity and mechanical fragility during packaging.
Can the CP188-BC546B-WR be used interchangeably with discrete transistors in prototyping environments, or does its die form factor impose limitations?
While the CP188-BC546B-WR shares the same electrical specifications as the BC546B, it cannot be used directly as a drop-in replacement in breadboards or perfboards due to its die format. Prototyping requires additional packaging, typically through ceramic or plastic carriers followed by encapsulation. Even then, solderability and thermal interface differ significantly from conventional transistors. For initial circuit validation, engineers often prototype with standard SOT-23 or TO-92 variants of the BC546B and migrate to die-level components only after design freeze and yield optimization.
What are the implications of the CP188-BC546B-WR's hFE of 200 minimum at 2 mA collector current and 5 V Vce?
A guaranteed minimum hFE of 200 under these conditions means the transistor will amplify small signals with minimal gain degradation, supporting stable feedback loops in amplifier stages. This level of amplification allows for robust switching even with limited base drive, reducing the need for high-gain drivers. In digital applications, this ensures reliable state transitions without excessive base current draw. However, designers should verify actual hFE across temperature extremes, as gain can vary by ±25% in bipolar transistors, potentially affecting threshold margins in comparator or logic circuits.
How does the operating temperature range of -65°C to 150°C impact the reliability of systems using the CP188-BC546B-WR?
The extended junction temperature range enables use in automotive, aerospace, and industrial environments where thermal cycling and ambient exposure are common. At 150°C, the transistor remains functional, but long-term reliability depends on cumulative thermal stress and package integrity. High-temperature operation accelerates electromigration and bond wire degradation, particularly in die-level assemblies. Engineers must ensure adequate heat sinking and avoid sustained operation above 125°C to preserve mean time between failures (MTBF), especially in sealed or enclosed systems with poor airflow.
Is the CP188-BC546B-WR compatible with automated optical inspection (AOI) in high-volume manufacturing?
No, the die format of the CP188-BC546B-WR makes it incompatible with standard AOI systems designed for surface-mount packages. Optical inspection relies on visible leads or solder joints, which are absent in unpackaged dies. Instead, manufacturers use electrical test structures, probe cards, or X-ray imaging to verify functionality and alignment. This increases test complexity and cost, offsetting some benefits of die-level integration unless the application demands ultra-low parasitics and high performance.
What design considerations apply when integrating the CP188-BC546B-WR into a mixed-signal circuit with sensitive analog front ends?
The die form eliminates lead inductance and reduces parasitic capacitance, improving high-frequency response. However, die-level devices are highly susceptible to electromagnetic interference and ground bounce unless carefully mounted on low-inductance substrates. Thermal vias and controlled impedance routing are essential to maintain signal integrity. Additionally, the absence of a standardized footprint complicates PCB layout consistency, requiring custom stencils and alignment guides. Designers should perform SPICE simulations including package parasitics to validate stability in feedback networks.
How does the Moisture Sensitivity Level (MSL) rating of 1 affect storage and handling of the CP188-BC546B-WR?
An MSL rating of 1 indicates unlimited shelf life under proper storage conditions, meaning the CP188-BC546B-WR does not require baking prior to reflow soldering. This simplifies inventory management and reduces handling steps in production. However, die-level components remain vulnerable to static discharge and particulate contamination. Facilities must maintain ESD-protected environments and cleanroom protocols during assembly to prevent failure, especially given the lack of protective packaging typical of full ICs.
What is the significance of the RoHS3 compliance status of the CP188-BC546B-WR in global supply chain planning?
RoHS3 compliance confirms the absence of restricted substances such as lead, mercury, cadmium, and certain flame retardants, aligning with international regulations including EU Directive 2011/65/EU and China’s Management Methods for Controlling Pollution by Electronic Information Products. This facilitates market access across North America, Europe, and Asia without customs delays or compliance audits. It also future-proofs designs against evolving environmental standards, though die-level components may still require verification through supplier declarations of conformance.
How do the ECCN (EAR99) and HTSUS (8541.21.0095) classifications influence export control and import duties for the CP188-BC546B-WR?
ECCN EAR99 indicates that the CP188-BC546B-WR is not subject to strict export controls under U.S. regulations, simplifying international shipments. HTSUS 8541.21.0095 classifies it as an active semiconductor device, which generally results in moderate import tariffs in countries like the United States. These codes help logistics teams anticipate customs requirements and avoid shipment holds. However, end-use verification is still necessary, particularly in defense or encryption-related applications, even for EAR99 items.
What trade-offs exist between using the CP188-BC546B-WR as a die versus a packaged transistor in RF pre-driver stages?
As a die, the CP188-BC546B-WR minimizes parasitic inductance and capacitance, enabling higher gain-bandwidth products—ideal for RF amplification. However, the lack of shielding exposes the fragile semiconductor junction to noise and physical damage. Packaged versions offer better mechanical robustness and easier integration but introduce parasitic elements that limit high-frequency performance. For RF applications below 1 GHz, packaged BC546Bs may suffice; for frequencies approaching 3–5 GHz, die-level integration becomes necessary despite assembly challenges.
How does the collector cutoff current (ICBO) of 15 nA influence leakage considerations in high-impedance sensor interfaces?
A maximum ICBO of 15 nA indicates very low reverse leakage current from collector to base, which helps preserve signal integrity in high-input-impedance circuits such as photodetectors or thermocouple amplifiers. This minimizes loading effects and prevents unwanted DC offsets. In battery-powered sensor nodes, low leakage extends operational life by reducing standby current drain. However, temperature rise increases ICBO exponentially—approximately doubling every 10°C—so thermal design must consider worst-case ambient conditions.
What precautions are required during ESD testing of the CP188-BC546B-WR due to its die-level construction?
Die-level devices exhibit extremely low ESD tolerance, often failing at voltages below 100 V HBM (Human Body Model). Testing must be performed in Class 0 ESD-safe zones with grounded workstations, wrist straps, and ionizers. Probe stations should use conductive tips with built-in current limiting. Unlike packaged ICs, die-level transistors cannot withstand standard JEDEC ESD tests and may require custom test fixtures with guarding rings to prevent arcing. Failure analysis post-event frequently reveals micro-cracks or junction burnout invisible under optical inspection.
In what scenarios would the CP188-BC546B-WR offer advantages over integrated BJT arrays or discrete MOSFETs?
The CP188-BC546B-WR provides superior linearity and low noise figure compared to MOSFETs in low-current analog stages, especially where gate charge or threshold variation is problematic. Integrated BJT arrays suffer from crosstalk and limited customization, whereas individual dies allow optimized bias networks. For applications requiring matched pairs or custom pinouts, die-level transistors enable tailored layouts unavailable in monolithic solutions. This makes them ideal in precision instrumentation, reference buffers, or hybrid microwave modules where symmetry and isolation matter.
How should the power dissipation curve of the CP188-BC546B-WR inform thermal derating strategies in compact enclosures?
With a maximum rated power of 500 mW, the CP188-BC546B-WR requires derating based on ambient temperature. In free-air operation, it may dissipate close to full power briefly, but continuous use above 25°C ambient necessitates reduced Ic or improved convection. In sealed enclosures, thermal resistance rises sharply—often exceeding 200°C/W without heatsinking. Designers should simulate steady-state junction temperatures using P = (Tj - Ta)/θJA, ensuring Tj stays below 125°C for reliability. Die-level mounting on copper pours improves θJA by 30–50% versus air-cooled pads.
What role does the DC current gain (hFE) variation play in feedback amplifier stability when using the CP188-BC546B-WR?
Bipolar transistors like the CP188-BC546B-WR exhibit hFE dispersion across production lots, typically ±30% around the nominal value. In feedback amplifiers relying on precise gain control, this variability can shift pole-zero locations, risking oscillation or reduced phase margin. Designers often use negative feedback or emitter degeneration to stabilize gain independent of hFE. Alternatively, calibration trimming or selection binning may be employed in high-precision systems, though die-level sorting adds logistical overhead.
How does the absence of a defined package affect PCB footprint standardization for the CP188-BC546B-WR?
Without a standardized package, the CP188-BC546B-WR lacks a universal footprint, forcing engineers to define custom pad layouts based on supplier-provided diagrams or mechanical drawings. This introduces risk of misalignment during assembly and complicates multi-supplier sourcing. It also limits compatibility with industry-standard pick-and-place libraries, requiring CAD team coordination with procurement. For production runs exceeding 10,000 units, investing in dedicated tooling and documentation becomes essential to avoid yield loss.
When selecting between the CP188-BC546B-WR and alternative NPN transistors for LED driver circuits, what factors beyond datasheet parameters must be considered?
Beyond Ic, Vceo, and hFE, designers evaluate switching speed, noise spectral density, and package-induced parasitics. The CP188-BC546B-WR’s die format offers faster turn-off times due to lower junction capacitance, beneficial in PWM-driven LEDs above 10 kHz. However, its fragility demands careful handling during rework. Comparatively, MOSFET-based drivers eliminate minority carrier storage delay but introduce gate drive complexity. The choice hinges on system priorities: efficiency, cost, or manufacturability—with die-level options reserved for high-performance, low-volume, or custom applications.

Parts with Similar Specifications

The three parts on the right have similar specifications to Central Semiconductor Corp CP188-BC546B-WR

Product Attribute CP188-BC546B-CM CP188-BC546B-CT CP188-BC107A-CT CP188-BC108-CT
Part Number CP188-BC546B-CM CP188-BC546B-CT CP188-BC107A-CT CP188-BC108-CT
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Current - Collector Cutoff (Max) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Series - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Collector (Ic) (Max) - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Voltage - Collector Emitter Breakdown (Max) - - - -
Power - Max - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C

CP188-BC546B-WR Datasheet PDF

Download CP188-BC546B-WR pdf datasheets and Central Semiconductor Corp documentation for CP188-BC546B-WR - Central Semiconductor Corp.

Datasheets
Bare Die & Wafer Part Number & Pkg Guide.pdf CP188.pdf
Environmental Information
RoHS Cert.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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Central Semiconductor Corp

CP188-BC546B-WR

Central Semiconductor Corp
98D-CP188-BC546B-WR

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