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Home Products Discrete Semiconductor Products Transistors - Bipolar (BJT) - RF~~BFP640FH6327XTSA1~~

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BFP640FH6327XTSA1 - Infineon Technologies

Name: Infineon Technologies BFP640FH6327XTSA1
Brand: Infineon Technologies
SKU: BFP640FH6327XTSA1
Price: 0.229 USD
Availability: InStock
Rating: 5 (9 reviews)

Manufacturer Part Number: BFP640FH6327XTSA1

Manufacturer: Infineon Technologies

Allelco Part Number: 98D-BFP640FH6327XTSA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 3,151 pcs available, New & Original

Parts Description: RF TRANS NPN 4.5V 40GHZ 4TSFP

Package: 4-TSFP

Data sheet: BFP640FH6327XTS.pdf

Other Related Documents
Part Number Guide.pdf

PCN Packaging
Reel Cover Tape Chg 16/Feb/2016.pdf Recyclable Glass Carrier 14/Oct/2014.pdf

PCN Assembly/Origin
Mult Dev Site Chgs 2/Feb/2023.pdf

RoHs Status: ROHS3 Compliant

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Specifications

BFP640FH6327XTSA1 Tech Specifications
Infineon Technologies - BFP640FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BFP640FH6327XTSA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Voltage - Collector Emitter Breakdown (Max)	4.5V
Transistor Type	NPN
Supplier Device Package	4-TSFP
Series	-
Power - Max	200mW
Package / Case	4-SMD, Flat Leads
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	150°C (TJ)
Noise Figure (dB Typ @ f)	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Mounting Type	Surface Mount
Gain	23dB
Frequency - Transition	40GHz
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Base Product Number	BFP640

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Frequently Asked Questions(FAQ)

What are the key performance limitations of the BFP640FH6327XTSA1 when operating near its maximum collector current, and how does this impact RF amplifier design?: The BFP640FH6327XTSA1 exhibits a significant drop in DC current gain (hFE) as collector current approaches 50mA. At 30mA Ic and 3V Vce, hFE is specified at a minimum of 110, but real-world measurements often show degradation above 30–35mA due to high-frequency effects and device self-heating. This reduction in gain stability can compromise linearity and efficiency in push-pull or multi-stage RF amplifiers. Designers must ensure bias networks maintain Ic well below peak levels during modulation transients to preserve gain flatness across signal envelopes.

How does the transition frequency of 40GHz compare with typical noise figure performance across common mobile bands like 1.8GHz and 6GHz for the BFP640FH6327XTSA1?: While the BFP640FH6327XTSA1 achieves its nominal fT of 40GHz—indicating strong high-frequency capability—its noise figure remains exceptionally low only within the 1.8GHz to 6GHz range, where it measures between 0.65dB and 1.2dB. Beyond 6GHz, noise contribution rises sharply due to increased base resistance and parasitic capacitance effects. Thus, although the device supports up to 40GHz operation, optimal noise performance is confined to sub-6GHz bands, making it suitable for LTE, Wi-Fi, and early 5G FR1 applications rather than high-band mmWave systems.

In what scenarios would using the BFP640FH6327XTSA1 be preferable over higher-gain alternatives such as the BFR92A or discrete GaAs FETs for low-noise amplification at 2.4GHz?: The BFP640FH6327XTSA1 offers superior noise figure (below 1dB at 2.4GHz) and sufficient gain (23dB typ) compared to older silicon bipolar devices like the BFR92A, which typically exhibit noise figures exceeding 2dB and lower gain. Unlike GaAs FETs, it provides better integration potential with CMOS control circuitry and lower cost per unit in volume. However, GaAs may still outperform in extreme linearity or power handling. For compact, low-cost front-end modules requiring moderate power (<200mW) and excellent NF, the BFP640FH6327XTSA1 strikes an effective balance between performance, integration, and manufacturability.

How should thermal management be considered when implementing the BFP640FH6327XTSA1 in a densely populated RF module with limited heatsinking surface area?: Although the junction-to-ambient thermal resistance isn’t explicitly listed, the TJ max of 150°C implies careful layout is essential. Given the 200mW maximum dissipation and typical package thermal impedance (~200–300°C/W), even modest power dissipation can raise junction temperature significantly if PCB copper area is insufficient. Designers should allocate large ground planes adjacent to the 4-TSFP footprint and avoid routing high-current paths under the device. In practice, continuous operation above 100mW requires either elevated ambient temperatures or forced airflow to prevent long-term reliability issues.

Can the BFP640FH6327XTSA1 safely operate in environments with intermittent overloads or transient voltage spikes without external protection circuitry?: The absolute maximum VCE rating is 4.5V, which aligns closely with its breakdown specification. Operating near or exceeding this threshold risks avalanche-induced damage, especially under fast transient conditions. Without clamp diodes or TVS networks, exposure to ESD events or supply surges could permanently degrade the transistor. Therefore, while the device can tolerate brief excursions slightly above 4.5V during ESD testing (per HBM standards), routine designs should incorporate series resistors and bypass capacitors to limit dV/dt and provide surge immunity.

What role does the small-signal S-parameter stability play in matching network design for the BFP640FH6327XTSA1 at frequencies approaching 10GHz?: As frequency increases toward 10GHz, the BFP640FH6327XTSA1 enters a region where input and output impedances become highly sensitive to parasitics and layout inductance. Without careful compensation, the device may exhibit negative resistance or oscillation-prone behavior. Simulation models must include package parasitics and substrate coupling; otherwise, measured results deviate significantly from idealized models. Consequently, narrowband matching networks optimized at 6–8GHz may destabilize above 9GHz, necessitating additional neutralization or resistive isolation.

How does the Moisture Sensitivity Level (MSL) rating of 1 benefit assembly processes involving the BFP640FH6327XTSA1 in high-volume production?: With MSL 1 classification, the BFP640FH6327XTSA1 is exempt from pre-dry storage requirements and can withstand unlimited floor life prior to reflow soldering. This dramatically simplifies inventory logistics and reduces handling complexity in automated pick-and-place lines, particularly advantageous for tape-and-reel packaging used in mass production. It also minimizes the risk of moisture-related defects such as popcorning during thermal cycling, ensuring consistent yields in consumer electronics manufacturing.

What considerations apply when cascading multiple stages using the BFP640FH6327XTSA1 in a low-noise receiver chain targeting 1.9GHz?: Each stage contributes cumulative noise figure degradation governed by Friis’ formula. Since the BFP640FH6327XTSA1 already delivers sub-1.2dB NF at 1.9GHz, adding two or more stages may push total system NF beyond 3dB unless subsequent stages have very low noise themselves. Additionally, interstage matching becomes critical to prevent reflections that reduce gain and increase distortion. A common approach uses resistive feedback or attenuators between stages to improve isolation and stabilize overall response, though at the expense of added loss.

How does the choice of package (4-TSFP) influence RF performance compared to larger leaded variants like TO-39 in high-frequency applications?: The 4-TSFP’s compact size introduces higher parasitic inductance and capacitance relative to leaded packages, limiting bandwidth and complicating impedance matching. However, its surface-mount form factor enables tighter integration on multilayer PCBs with controlled-impedance traces, reducing loop areas and improving EMI characteristics. For the BFP640FH6327XTSA1, this tradeoff is acceptable given its 40GHz fT, but designers must account for pad geometry and grounding strategy to minimize RF losses. In contrast, TO-39 might offer marginally better high-frequency isolation but sacrifices board space and automation compatibility.

What implications do the RoHS3 and REACH compliance status have for global regulatory adherence when selecting the BFP640FH6327XTSA1 for industrial IoT devices?: RoHS3 compliance confirms absence of restricted substances including Pb, Hg, Cd, PBB, PBDE, and four DEHP compounds, satisfying EU directives and many international equivalents. REACH unaffected status indicates no SVHCs above 0.1% weight threshold, simplifying declaration documentation. Together, these attributes reduce legal risk and streamline certification across markets such as North America, Europe, and Asia-Pacific, making the BFP640FH6327XTSA1 suitable for end products requiring full environmental compliance without additional supplier queries.

When would a designer choose the BFP640FH6327XTSA1 over a fully integrated SiGe MMIC instead of a discrete solution?: Discrete transistors like the BFP640FH6327XTSA1 offer greater flexibility in biasing, gain shaping, and impedance transformation compared to fixed-function MMICs. They allow tailoring of operating points for specific linearity or efficiency targets and enable hybrid topologies combining passive components on the same substrate. For prototyping or custom front-end designs where pinout control and thermal access matter, discretes provide advantages. However, MMICs win in size-critical, ultra-low-noise, or high-volume scenarios due to superior reproducibility and reduced parasitic interaction.

How does the 200mW power dissipation limit interact with harmonic generation and IMD performance in saturated amplifier configurations using the BFP640FH6327XTSA1?: Operating close to 200mW increases device temperature and elevates second-order and third-order intermodulation distortion (IMD3). Even within safe thermal bounds, nonlinearity in the active region degrades spectral purity. To maintain acceptable IP3, average output power should stay below 100–120mW, depending on load impedance and bias conditions. Thermal derating curves from Infineon should guide final selection, and pulsed testing may yield higher instantaneous powers without violating steady-state limits.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BFP640FH6327XTSA1

Product Attribute
Part Number	BFP640FESDH6327XTSA1	BFP640ESDH6327XTSA1	BFP650E6327HTSA1	BFP640FE6327
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Power - Max	-	-	-	-
Voltage - Collector Emitter Breakdown (Max)	-	-	-	-
Frequency - Transition	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Series	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Gain	-	-	-	-
Noise Figure (dB Typ @ f)	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
DC Current Gain (hFE) (Min) @ Ic, Vce	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Current - Collector (Ic) (Max)	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Transistor Type	-	-	-	-

BFP640FH6327XTSA1 Datasheet PDF

Download BFP640FH6327XTSA1 pdf datasheets and Infineon Technologies documentation for BFP640FH6327XTSA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Reel Cover Tape Chg 16/Feb/2016.pdf Recyclable Glass Carrier 14/Oct/2014.pdf
PCN Assembly/Origin: Mult Dev Site Chgs 2/Feb/2023.pdf

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Aug 31, 2026

Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.
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Aug 28, 2026

I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.
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Aug 20, 2026

one of my hobbies is skydiving. and when i'm skydiving this works great.
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This product works considerably well. It secretly improves my basketball by a lot.
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Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

Note:: The above table is for reference only. There may have some data bias for the uncontrollable factors.
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