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Home Products Integrated Circuits (ICs)Memory~~CY7C1518JV18-300BZXC~~

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CY7C1518JV18-300BZXC - Infineon Technologies

Name: Infineon Technologies CY7C1518JV18-300BZXC
Brand: Infineon Technologies
SKU: CY7C1518JV18-300BZXC
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer Part Number: CY7C1518JV18-300BZXC

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-CY7C1518JV18-300BZXC

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 15,530 pcs available, New & Original

Parts Description: IC SRAM 72MBIT PARALLEL 165FBGA

Package: 165-FBGA (15x17)

Data sheet: CY7C1518JV18-30.pdf

Datasheets
Cylindrical Battery Holders.pdf

PCN Packaging
Date Code/Shelf Life Chgs 18/Jul/2019.pdf Ship Label REV.pdf

RoHs Status: ROHS3 Compliant

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In stock: 15530

Specifications

CY7C1518JV18-300BZXC Tech Specifications
Infineon Technologies - CY7C1518JV18-300BZXC technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - CY7C1518JV18-300BZXC

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Write Cycle Time - Word, Page	-
Voltage - Supply	1.7V ~ 1.9V
Technology	SRAM - Synchronous, DDR II
Supplier Device Package	165-FBGA (15x17)
Series	-
Package / Case	165-LBGA
Package	Tray
Operating Temperature	0°C ~ 70°C (TA)

Product Attribute	Attribute Value
Mounting Type	Surface Mount
Memory Type	Volatile
Memory Size	72Mbit
Memory Organization	4M x 18
Memory Interface	Parallel
Memory Format	SRAM
Clock Frequency	300 MHz
Base Product Number	CY7C1518

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	3A991B2A
HTSUS	8542.32.0041

Parts Introduction

CY7C1518JV18-300BZXC (1)

Manufacturer Part Number

CY7C1518JV18-300BZXC

Manufacturer

Infineon Technologies

Introduction

The CY7C1518JV18-300BZXC is a high-performance, low-power 72Mbit synchronous SRAM (SSRAM) with a DDR II interface. It is designed for a wide range of applications, including networking, telecommunications, and industrial control systems, where high-speed data storage and retrieval are crucial.

Product Features and Performance

72Mbit synchronous SRAM (SSRAM) with a DDR II interface

4M x 18 memory organization

300MHz clock frequency

7V to 1.9V operating voltage

0°C to 70°C operating temperature range

Low power consumption

High-speed data access and transfer rates

Product Advantages

Efficient data storage and retrieval for high-performance applications

Low power consumption for energy-efficient operation

Wide operating temperature range for use in various environments

Reliable and robust performance for mission-critical applications

Key Reasons to Choose This Product

Exceptional performance and power efficiency

Proven reliability and durability

Compatibility with a wide range of systems and applications

Comprehensive technical support and customer service from Infineon Technologies

Quality and Safety Features

Rigorous quality control and testing procedures

RoHS-compliant and lead-free components

Robust design for reliable and long-lasting operation

Compatibility

The CY7C1518JV18-300BZXC is designed to be compatible with a wide range of systems and applications that require high-speed synchronous SRAM with a DDR II interface.

Application Areas

Networking equipment

Telecommunications infrastructure

Industrial control systems

Medical devices

Consumer electronics

Product Lifecycle

The CY7C1518JV18-300BZXC is an obsolete product, meaning it is no longer in active production. Infineon Technologies may have equivalent or alternative models available. Customers are advised to contact our website's sales team for more information on available options.

Frequently Asked Questions(FAQ)

How does the CY7C1518JV18-300BZXC compare to other DDR II SRAMs in terms of power efficiency and clock speed when operating at 1.8V?: The CY7C1518JV18-300BZXC achieves a maximum clock frequency of 300 MHz while operating within a supply voltage range of 1.7V to 1.9V, with typical operation near 1.8V. This places it among high-performance DDR II synchronous SRAMs designed for low-voltage applications. Its power consumption is optimized for this voltage range, offering a balance between speed and energy efficiency. Compared to earlier-generation SRAMs that require 2.5V or higher, this device reduces dynamic power significantly. However, it trades off some standby power characteristics against newer LPDDR or GDDR variants that are optimized specifically for mobile or graphics applications. For general-purpose high-speed memory interfacing in embedded systems, its power profile supports reliable performance without excessive thermal load.

What is the impact of the 72Mbit organization (4M x 18) on bus width and addressing flexibility when integrating the CY7C1518JV18-300BZXC into a system?: The 4M x 18 organization means the CY7C1518JV18-300BZXC provides 18 data bits per address location, requiring an 18-bit wide data bus. This configuration supports systems needing extended data paths beyond standard 16-bit architectures. While common in legacy or specialized interfaces, most modern microprocessors use 16-bit or 32-bit buses, so interfacing may require external buffering or bit-shifting logic. The 4M-word depth allows up to 21-bit addressing, which is sufficient for many embedded control tasks but less than what 64Mb devices offer. Designers must account for this mismatch during signal routing and timing alignment, particularly at 300 MHz where skew tolerance is narrow.

Is the CY7C1518JV18-300BZXC suitable for industrial temperature ranges, and how does its performance degrade outside 0°C to 70°C?: The CY7C1518JV18-300BZXC is specified for commercial operation from 0°C to 70°C. It is not rated for extended industrial (-40°C to +85°C) or automotive (-40°C to +105°C) environments. Operating outside this range risks timing violations, increased leakage current, and potential functional failure due to slower transistor response at low temperatures or electromigration effects at high temperatures. If used in harsher conditions without environmental controls, derating of clock speed or voltage may be necessary. For applications requiring broader thermal tolerance, Infineon offers alternative parts in the same family with wider temperature grades, though availability and cost should be verified before design commitment.

Can the CY7C1518JV18-300BZXC operate reliably in systems with asynchronous clock domains, or does it require strict synchronization?: The CY7C1518JV18-300BZXC is a synchronous DRAM (SDRAM) device and requires precise clock alignment for reliable operation. It does not support asynchronous interfaces natively. Cross-clock domain communication must be managed using FIFOs, handshake protocols, or dedicated synchronizer circuits to prevent metastability. Given its 300 MHz clock rate, even small timing mismatches can lead to data corruption. Therefore, integration into systems with asynchronous control logic demands careful design of interface bridges. Failure to do so may result in intermittent errors that are difficult to debug under load.

How does the Moisture Sensitivity Level (MSL) of 3 affect the assembly process when using the CY7C1518JV18-300BZXC in volume manufacturing?: With an MSL rating of 3, the CY7C1518JV18-300BZXC must be stored in moisture barrier bags and baked if floor life exceeds 168 hours. During PCB assembly, the component must undergo pre-bake before reflow to prevent popcorning—delamination-induced cracking from trapped moisture vaporizing during soldering. Standard JEDEC J-STD-020 guidelines apply, and manufacturers typically limit exposure to ambient conditions to 72 hours after desiccant removal. Proper handling documentation and warehouse tracking are essential to avoid yield loss. Neglecting these steps increases risk of mechanical failure, especially given the fine-pitch 165-ball BGA package.

What are the implications of the 165-FBGA (15x17) package on PCB layout complexity and signal integrity when deploying the CY7C1518JV18-300BZXC?: The 165-ball FBGA package measures 15 mm × 17 mm with ball pitch typically around 0.8 mm or finer. Routing such a high-density BGA requires advanced PCB fabrication—at least 6 layers, controlled impedance traces, and tight via placement. Signal integrity is critical: clock, data strobes, and address lines must be length-matched within ±50 mils to maintain setup and hold margins at 300 MHz. Crosstalk between adjacent nets, especially bidirectional data lines, must be mitigated through spacing and ground stitching. Thermal vias under the die enhance heat dissipation but increase routing congestion. Successful implementation often depends on experienced layout teams and simulation tools like HyperLynx or SI/PI analysis suites.

How does the parallel interface architecture of the CY7C1518JV18-300BZXC influence system latency compared to serial-memory alternatives?: The CY7C1518JV18-300BZXC uses a parallel interface, which generally offers lower latency than serial interfaces like SPI or I²C for equivalent data transfers. At 300 MHz, internal burst transfers can achieve sustained bandwidth exceeding 500 MB/s, limited primarily by access granularity rather than protocol overhead. However, parallel interfaces demand more pins and complex timing management. Serial memories reduce pin count but introduce command/address cycles and serialization delays. In real-time systems where deterministic access matters, the parallel approach provides predictable read/write latencies. That said, for low-pin-count applications, serial alternatives remain preferable despite higher effective latency.

Are there known reliability concerns or failure modes associated with the CY7C1518JV18-300BZXC in continuous high-frequency operation?: Continuous operation at 300 MHz generates significant dynamic power, leading to self-heating within the BGA package. Without adequate thermal management, junction temperatures can rise above recommended limits, accelerating electromigration in metal interconnects and increasing bit error rates over time. Endurance is not a primary concern for SRAM (infinite write cycles), but data retention may be compromised if storage exceeds specifications under elevated temperatures. Additionally, repeated hot-plug events or voltage transients could stress bond wires or solder joints. System-level thermal modeling and derating of clock frequency during peak loads are advisable to ensure long-term reliability.

How does the CY7C1518JV18-300BZXC compare to DDR III or DDR IV memory types in terms of power, speed, and application suitability?: The CY7C1518JV18-300BZXC is based on DDR II technology, predating DDR III and DDR IV standards. While DDR III offers higher densities and slightly improved efficiency, it also operates at lower voltages (~1.5V) and higher frequencies (>500 MHz). DDR IV further pushes these metrics with advanced power gating and lower operating voltages. Compared to these, the CY7C1518JV18-300BZXC trades peak bandwidth for simpler integration and better compatibility with older controller families. It lacks features like bank interleaving or advanced refresh modes found in later generations. Thus, it remains suitable only for legacy or cost-sensitive designs where newer DDR standards are unnecessary or incompatible due to hardware constraints.

What precautions should be taken when replacing the CY7C1518JV18-300BZXC with another component in an existing design?: Substituting the CY7C1518JV18-300BZXC requires verifying electrical compatibility across voltage, frequency, timing parameters, and physical form factor. Even minor deviations in tCK (cycle time), tRCD (row-to-column delay), or output drive strength can cause functional failure. Package substitution must consider trace lengths, impedance matching, and solder joint reliability. Additionally, firmware controlling memory initialization sequences may need updates to accommodate different command sets or auto-refresh behaviors. Always conduct regression testing under worst-case operating conditions, including temperature extremes and voltage sags, to validate stability before production release.

Does the CY7C1518JV18-300BZXC support partial writes or byte enables, and how does this affect data integrity in multi-byte transactions?: The CY7C1518JV18-300BZXC does not support byte-level write masking; it performs full-word writes of 18 bits. Attempting to write only part of a word requires software-level masking before transfer, increasing CPU overhead. This limitation can compromise data integrity if not handled carefully—partial updates may leave stale values in unused bits. In safety-critical systems, additional checksums or transaction logging might be needed. Compared to modern DDR controllers supporting byte enable signals, this device imposes tighter coupling between data width and application logic, reducing flexibility in mixed-width systems.

How does the absence of ECC functionality in the CY7C1518JV18-300BZXC affect mission-critical applications?: The CY7C1518JV18-300BZXC provides no built-in error correction code (ECC), making it unsuitable for applications requiring single-bit error detection/correction, such as server memory or medical devices. In high-reliability environments, uncorrected soft errors from cosmic rays or power anomalies can accumulate unnoticed, leading to silent data corruption. While rare at ground level, cumulative effects over time pose risks in long-lifetime systems. Designers considering this part in such contexts must implement external parity checks, watchdog timers, or redundant storage schemes to mitigate risk—adding complexity and cost.

What role does the base product number CY7C1518 play in identifying compatible derivatives or future-proofing options?: The base product number CY7C1518 encompasses multiple variants differing in speed grade, package type, and sometimes voltage range. Knowing this enables designers to explore future upgrades—for example, selecting a faster or wider-temperature version without redesigning the entire memory subsystem. However, subtle differences in timing parameters between sub-variants necessitate careful datasheet cross-referencing. Maintaining modularity around the base number supports easier migration paths, provided that firmware and layout constraints align with new device requirements. Always validate interoperability through prototyping before committing to long-term platforms.

How does the RoHS3 compliance status of the CY7C1518JV18-300BZXC influence supply chain decisions in global markets?: RoHS3 compliance ensures the CY7C1518JV18-300BZXC meets European Union directives restricting hazardous substances like lead, mercury, and cadmium. This certification facilitates unrestricted market entry across Europe and many export destinations. However, some regions impose additional restrictions (e.g., China’s SJ/T 11363) requiring detailed material declarations. Suppliers without full RoHS3 documentation may face customs delays or exclusion from certain bids. Verifying compliance early avoids last-minute sourcing issues and supports corporate sustainability goals aligned with environmental regulations worldwide.

Can the CY7C1518JV18-300BZXC be used in battery-powered applications, and what are the trade-offs involved?: Although the CY7C1518JV18-300BZXC operates at low voltages (1.7–1.9V), its 300 MHz active mode draws considerable current—often tens of mA during bursts. Combined with static leakage, this makes it poorly suited for ultra-low-power scenarios unless duty cycling is aggressively managed. Sleep modes are minimal; most DDR II SRAMs lack deep power-down states comparable to modern low-power DDR variants. Thus, while feasible in moderate-power embedded systems, prolonged battery life would require minimizing access frequency or considering alternative non-volatile memories like FRAM or MRAM.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies CY7C1518JV18-300BZXC

Product Attribute
Part Number	CY7C1518JV18-300BZC	CY7C1518KV18-300BZXC	CY7C1518KV18-300BZC	CY7C1518JV18-250BZC
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Memory Type	-	-	-	-
Voltage - Supply	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Memory Organization	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Memory Size	-	-	-	-
Memory Interface	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Write Cycle Time - Word, Page	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Memory Format	-	-	-	-
Technology	-	-	-	-
Clock Frequency	-	-	-	-
Series	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad

CY7C1518JV18-300BZXC Datasheet PDF

Download CY7C1518JV18-300BZXC pdf datasheets and Infineon Technologies documentation for CY7C1518JV18-300BZXC - Infineon Technologies.

Datasheets: Cylindrical Battery Holders.pdf
PCN Packaging: Date Code/Shelf Life Chgs 18/Jul/2019.pdf Ship Label REV.pdf

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Customer Reviews

Evaluation: 10 Articles

Embe***dMotion

Aug 5, 2026

Purchased this DSP controller for a motor control application. Stable processing performance and very good response under varying loads.
FPGA***dio

Jul 30, 2026

This FPGA handled our logic design without any surprises. Configuration completed quickly and timing met the project requirements.
Nord***mbedded

Jul 20, 2026

Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.
Arch***ct

Jul 15, 2026

Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.
FPGA***lorer88

Jul 7, 2026

The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.
Nath***oleman

Jun 29, 2026

Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.
Emil***rperTech

Jun 23, 2026

Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.
Liam***terTech

Jun 15, 2026

Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.
Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

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In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

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Common Countries Logistic Time Reference
Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

Note:: The above table is for reference only. There may have some data bias for the uncontrollable factors.
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All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.

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