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IKP39N65ES5XKSA1 - Infineon Technologies

Name: Infineon Technologies IKP39N65ES5XKSA1
Brand: Infineon Technologies
SKU: IKP39N65ES5XKSA1
Price: 1.949 USD
Availability: InStock
Rating: 5 (4 reviews)

Manufacturer Part Number: IKP39N65ES5XKSA1

Manufacturer: Infineon Technologies

Allelco Part Number: 98D-IKP39N65ES5XKSA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 30,294 pcs available, New & Original

Parts Description: IGBT 650V 39A TO220-3

Package: PG-TO220-3

Data sheet: IKP39N65ES5XKSA.pdf

PCN Assembly/Origin
Mult Dev A/T Chgs 18/Jan/2021.pdf

RoHs Status: ROHS3 Compliant

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Specifications

IKP39N65ES5XKSA1 Tech Specifications
Infineon Technologies - IKP39N65ES5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IKP39N65ES5XKSA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Voltage - Collector Emitter Breakdown (Max)	650 V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 39A
Test Condition	400V, 39A, 12.8Ohm, 15V
Td (on/off) @ 25°C	20ns/120ns
Switching Energy	800µJ (on), 500µJ (off)
Supplier Device Package	PG-TO220-3
Series	TrenchStop™ 5
Reverse Recovery Time (trr)	84 ns
Power - Max	188 W

Product Attribute	Attribute Value
Package / Case	TO-220-3
Package	Tube
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Input Type	Standard
IGBT Type	Trench Field Stop
Gate Charge	70 nC
Current - Collector Pulsed (Icm)	120 A
Current - Collector (Ic) (Max)	62 A
Base Product Number	IKP39N65

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99

Frequently Asked Questions(FAQ)

How does the IKP39N65ES5XKSA1's switching energy compare to other 650V IGBTs in high-efficiency motor drive applications, and what impact does this have on system thermal management?: The IKP39N65ES5XKSA1 exhibits a turn-on energy of 800µJ and turn-off energy of 500µJ under test conditions of 400V and 39A with a 12.8Ω load and 15V gate drive. These values are relatively low compared to older planar IGBT technologies at similar voltage ratings, contributing to reduced dynamic losses. In motor control systems, lower switching energy directly translates to lower conduction and switching losses, which helps minimize heat generation in the inverter stage. This improved efficiency allows for smaller heatsinks or more compact enclosure designs, especially beneficial in industrial drives where space is constrained.

What is the significance of the gate charge (70 nC) in the IKP39N65ES5XKSA1 when designing gate driver circuits, and how does it affect switching speed and power consumption?: With a gate charge of 70 nC, the IKP39N65ES5XKSA1 requires a robust gate driver capable of sourcing sufficient current to charge and discharge the gate capacitance quickly. A higher gate charge increases the energy needed per switching cycle, impacting both the gate driver’s power supply requirements and thermal budget. However, this IGBT also demonstrates fast switching times—20ns turn-on delay and 120ns total turn-on time—indicating efficient carrier injection due to its trench field-stop structure. Designers must ensure their gate drivers can deliver peak currents in excess of 1–2A to fully exploit these switching characteristics without degrading performance.

Can the IKP39N65ES5XKSA1 be used interchangeably with the base model IKP39N65 in legacy designs, and what key differences should engineers consider?: While the IKP39N65ES5XKSA1 shares the same base part number as the IKP39N65, the ES5 variant incorporates enhancements aligned with Infineon’s TrenchStop™ 5 technology. The primary difference lies in improved switching performance and reliability metrics, including optimized turn-off energy and reduced tail current due to advanced doping profiles. Although electrical parameters such as Vce(on) and collector current remain consistent, the ES5 version offers better ruggedness against short-circuit events and enhanced thermal cycling capability. Engineers should verify that existing gate drive thresholds and thermal margins accommodate these refinements before substitution.

How does the maximum junction temperature of 175°C influence the selection of cooling solutions for the IKP39N65ES5XKSA1 in automotive or industrial environments?: Operating up to 175°C junction temperature enables the IKP39N65ES5XKSA1 to function reliably in thermally demanding applications such as electric vehicle traction inverters or solar string converters. This high tolerance reduces reliance on complex active cooling systems, allowing passive heatsink designs even under continuous full-load operation. However, achieving this requires careful attention to thermal interface resistance, heatsink sizing, and airflow conditions. In forced-air environments, designers may push power dissipation closer to 188W, but derating by 10–15% is often prudent to maintain long-term reliability and avoid thermal runaway risks.

What are the implications of the TO-220-3 package and PG-TO220-3 supplier designation for mechanical integration and PCB layout in high-power modules?: The PG-TO220-3 denotes a standard TO-220 footprint with three terminals (collector, emitter, gate), ensuring compatibility with most through-hole motor drive boards. Its robust lead frame and exposed metal tab provide excellent thermal conductivity, facilitating direct attachment to heatsinks using thermal pads or solder. The mechanical stability supports vibration resistance in automotive and industrial settings. During PCB layout, minimizing parasitic inductance around the gate and collector paths is critical—especially given the 70 nC gate charge and fast switching edges—to prevent false triggering or overshoot during turn-on/turn-off transitions.

How does the reverse recovery time (trr = 84 ns) of the integrated freewheeling diode in the IKP39N65ES5XKSA1 affect snubber circuit design in bridge configurations?: The 84 ns reverse recovery time indicates moderate softness in the internal diode transition, which helps reduce voltage ringing and EMI compared to hard-recovery diodes found in older devices. While not ultra-fast like SiC diodes, this characteristic still necessitates careful consideration in half-bridge or full-bridge topologies to avoid shoot-through during dead times. Snubbers or RC networks may be needed if switching frequencies exceed 20–30 kHz, particularly under high dV/dt conditions. The relatively low trr also suggests reduced turn-off losses from body diode commutation, improving overall efficiency in synchronous rectification modes.

In what scenarios would the pulsed collector current rating of 120 A offer advantages over the continuous 62 A rating for the IKP39N65ES5XKSA1?: The 120 A pulsed current capability allows the IKP39N65ES5XKSA1 to handle surge events such as startup inrush, regenerative braking peaks, or fault conditions without immediate damage. This is especially useful in motor drives experiencing frequent load transients or in welding equipment requiring high peak power bursts. However, continuous operation near 62 A already pushes the device close to its thermal limits; therefore, relying solely on pulsed ratings for sustained performance is unsafe. Designers must ensure that cumulative energy from multiple pulses does not exceed safe operating area (SOA) boundaries or cause thermal stress accumulation.

How does the Vce(on) of 1.85V at 15V gate drive and 39A collector current influence conduction loss calculations in a 400V, 10kW inverter application?: At 39A average current, the Vce(on) of 1.85V results in a conduction loss of approximately 72 W per device in a two-switch half-bridge configuration. Over a typical 10kW system operating at 10kHz with 20% duty cycle, this represents about 14% of total power loss—significant enough to require active cooling. Compared to newer Si MOSFETs at similar voltages, the IGBT’s higher on-resistance makes it less efficient above 50–70 kHz, but its superior short-circuit withstand and cost-effectiveness may justify use below that threshold. Accurate loss modeling must include temperature dependence of Vce(on), which typically increases by 0.7–1 mV/°C near 150°C.

What role does the Moisture Sensitivity Level (MSL) classification play in handling and storage of the IKP39N65ES5XKSA1 before assembly?: The IKP39N65ES5XKSA1 is classified as MSL Not Applicable, indicating it is not sensitive to moisture-induced failures during reflow soldering. This simplifies handling procedures compared to components rated MSL 1–3, as no bake cycles or humidity-controlled storage are required prior to board assembly. It also reduces logistical complexity in high-volume manufacturing environments, lowering cost and risk of delamination or popcorning. This attribute is consistent with through-hole packages containing ceramic or metal-cased die carriers that resist moisture ingress.

How do the ECCN and HTSUS codes (EAR99 and 8541.29.0095) affect global procurement and compliance for the IKP39N65ES5XKSA1 in international projects?: Classified under ECCN EAR99, the IKP39N65ES5XKSA1 is subject to U.S. Export Administration Regulations but generally available for worldwide shipment without special licensing, provided it does not contain controlled components. The HTSUS code 8541.29.0095 confirms its status as an electronic semiconductor device excluding diodes, making it subject to standard import tariffs in most countries. These classifications simplify export documentation and customs clearance, reducing lead time and administrative overhead for multinational teams deploying the component in aerospace, defense, or consumer electronics across regions like EU, APAC, and Americas.

What design trade-offs emerge when choosing the IKP39N65ES5XKSA1 over a MOSFET-based solution in a 650V DC-DC converter operating above 50 kHz?: While MOSFETs like those in SiC or GaN families achieve lower Rds(on) and faster switching at high frequencies, the IKP39N65ES5XKSA1 remains competitive in applications prioritizing robustness, cost, and moderate frequency operation. Its 1.85V Vce(on) and 70 nC gate charge result in higher conduction and switching losses than wide-bandgap alternatives, leading to larger heatsinks or reduced efficiency above 50 kHz. However, the IGBT excels in short-circuit tolerance and avalanche energy handling, making it preferable in grid-tie inverters or motor drives where reliability under fault conditions outweighs peak efficiency goals.

How does the REACH status (Unaffected) impact environmental compliance and supply chain auditing for the IKP39N65ES5XKSA1?: Declared REACH Unaffected means the IKP39N65ES5XKSA1 contains no substances of very high concern (SVHC) above 0.1% concentration, simplifying compliance with European Union regulations. This eliminates the need for additional disclosure forms or supplier declarations during tendering, accelerating procurement cycles for EU-bound products. It also aligns with corporate sustainability policies aiming to eliminate restricted materials, supporting certifications like RoHS3 and ISO 14001. Suppliers can confidently source this component without risk of future regulatory bans affecting production continuity.

What considerations apply when paralleling multiple IKP39N65ES5XKSA1 devices in high-current applications such as battery charger output stages?: Paralleling IKP39N65ES5XKSA1 units demands careful attention to gate drive symmetry, lead length matching, and thermal coupling to ensure current sharing. Due to variations in threshold voltage and on-state characteristics between devices, imbalance can cause one unit to carry disproportionate current, leading to premature aging or failure. Distributed gate resistors and close placement on a common heatsink improve balance, but active current sensing and feedback control may be necessary for loads exceeding 100A total. Dynamic load testing under real-world conditions is recommended to validate shared operation stability.

How does the input type (Standard) and absence of advanced logic-level gate drive compatibility affect interfacing with modern microcontrollers?: The Standard input type indicates that the IKP39N65ES5XKSA1 requires a 15V gate drive signal to reach minimum Vce(on), unlike logic-level IGBTs compatible with 5V or 3.3V MCUs. This necessitates a dedicated gate driver IC with level-shifting capabilities, increasing bill-of-materials count and board complexity. Without integrated bootstrap circuitry, floating gate drivers are required for high-side switches in half-bridges, adding capacitors and diodes. Designers should account for propagation delays introduced by external drivers to meet timing constraints in synchronous rectification or phase-controlled systems.

What factors determine whether the IKP39N65ES5XKSA1 meets safety standards for use in industrial automation equipment requiring UL or IEC certification?: Compliance with safety standards depends not only on the component itself but also on end-system implementation. The IKP39N65ES5XKSA1’s high breakdown voltage (650V), robust packaging, and reliable SOA support certification efforts, provided proper creepage/clearance distances, insulation, and fault protection are implemented in the PCB layout. Certifying agencies assess isolation barriers, thermal derating curves, and short-circuit withstand duration—parameters well-documented in Infineon’s application notes for the TrenchStop™ 5 family. Inclusion of fuses, current sensors, and soft-start features further strengthens qualification for IEC 61800-5-1 or UL 508C standards.

How does the series designation (TrenchStop™ 5) reflect technological advancements over previous generations like TrenchStop™ 4 in terms of efficiency and ruggedness?: TrenchStop™ 5 represents Infineon’s fifth-generation trench field-stop IGBT technology, featuring refined doping profiles and cell architecture that reduce switching losses by approximately 15–20% compared to TrenchStop™ 4 equivalents. The IKP39N65ES5XKSA1 benefits from lower gate charge and improved turn-off behavior, enabling higher switching frequencies in resonant or PWM converters without excessive losses. Additionally, enhanced short-circuit withstand time (typically >10µs) improves system resilience in motor drives subject to overloads. These improvements make TrenchStop™ 5 suitable for next-generation renewable energy and e-mobility platforms demanding higher power density and reliability.

What precautions should be taken during thermal cycling tests involving the IKP39N65ES5XKSA1 to avoid early failure due to solder joint fatigue?: Given its high operating temperature range (-40°C to 175°C), repeated thermal cycling induces mechanical stress at the junction between the die and the PG-TO220-3 lead frame. To mitigate solder joint fatigue, engineers should use lead-free SAC305 solder with controlled reflow profiles, avoid excessive thermal interface material thickness, and ensure flatness of the heatsink mounting surface. Strain relief techniques such as flexible thermal pads or compliant washers can absorb expansion mismatches. Accelerated life testing following JEDEC JESD22-A104 guidelines is advisable for mission-critical applications to validate long-term integrity.

Why might the IKP39N65ES5XKSA1 be preferred over alternative IGBTs with similar voltage and current ratings despite slightly higher gate charge?: Although some competitors offer comparable 650V IGBTs with lower gate charge, the IKP39N65ES5XKSA1 stands out due to its proven TrenchStop™ 5 platform heritage, extensive qualification data, and strong supply chain support. Its 84 ns trr diode, 120 A pulse rating, and 175°C TJ enable deployment in harsh environments without redesign effort. Furthermore, Infineon’s application engineering resources and SPICE models streamline simulation and layout optimization, reducing development risk. For designs targeting 50–100 kW motor drives or solar inverters, this combination of performance, reliability, and ecosystem maturity often outweighs marginal gains in switching speed from niche alternatives.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IKP39N65ES5XKSA1

Product Attribute
Part Number	IKP28N65ES5XKSA1	IKP30N65H5XKSA1	IKP30N65F5XKSA1	IKP20N65F5XKSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Voltage - Collector Emitter Breakdown (Max)	-	-	-	-
Power - Max	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Series	-	-	-	-
Current - Collector Pulsed (Icm)	-	-	-	-
Test Condition	-	-	-	-
Input Type	-	-	-	Differential
Current - Collector (Ic) (Max)	-	-	-	-
Vce(on) (Max) @ Vge, Ic	-	-	-	-
Switching Energy	-	-	-	-
Gate Charge	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Td (on/off) @ 25°C	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Reverse Recovery Time (trr)	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
IGBT Type	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)

IKP39N65ES5XKSA1 Datasheet PDF

Download IKP39N65ES5XKSA1 pdf datasheets and Infineon Technologies documentation for IKP39N65ES5XKSA1 - Infineon Technologies.

PCN Assembly/Origin: Mult Dev A/T Chgs 18/Jan/2021.pdf

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Customer Reviews

Evaluation: 10 Articles

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Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.
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Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.
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Aug 28, 2026

I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.
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Aug 20, 2026

one of my hobbies is skydiving. and when i'm skydiving this works great.
Ilen***

Aug 20, 2026

This product works considerably well. It secretly improves my basketball by a lot.
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Aug 17, 2026

Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.
Nikh***ech

Aug 13, 2026

Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.
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Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

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