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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB027N10N3GATMA1~~

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IPB027N10N3GATMA1 - Infineon Technologies

Name: Infineon Technologies IPB027N10N3GATMA1
Brand: Infineon Technologies
SKU: IPB027N10N3GATMA1
Availability: InStock
Rating: 5 (3 reviews)

Manufacturer Part Number: IPB027N10N3GATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB027N10N3GATMA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 10,887 pcs available, New & Original

Parts Description: MOSFET N-CH 100V 120A D2PAK

Package: PG-TO263-3

Data sheet: IPB027N10N3GATM.pdf

Other Related Documents
Part Number Guide.pdf

PCN Assembly/Origin
Mult Dev Wafer Chgs 22/Dec/2021.pdf

PCN Packaging
Mult Dev Pkg Box Chg 3/Jan/2018.pdf

RoHs Status: ROHS3 Compliant

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In stock: 10887

Specifications

IPB027N10N3GATMA1 Tech Specifications
Infineon Technologies - IPB027N10N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB027N10N3GATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.5V @ 275µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	IPB027

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Parts Introduction

IPB027N10N3GATMA1 (1)

Manufacturer Part Number

IPB027N10N3GATMA1

Manufacturer

Infineon Technologies

Introduction

This is a single N-channel MOSFET transistor from Infineon's OptiMOS series, designed for high-power applications.

Product Features and Performance

100V drain-to-source voltage rating

120A continuous drain current at 25°C

Low on-resistance of 2.7 milliohms at 100A, 10V

Wide operating temperature range of -55°C to 175°C

High power dissipation capability of 300W at case temperature

Fast switching with low gate charge of 206nC at 10V

Product Advantages

Excellent efficiency and thermal performance

Optimized for high-power, high-current applications

Robust design with high reliability

Ease of use with standard MOSFET gate drive requirements

Key Technical Parameters

Drain-to-source voltage (Vdss): 100V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 2.7 milliohms

Continuous drain current (Id): 120A

Input capacitance (Ciss): 14,800 pF

Gate charge (Qg): 206 nC

Quality and Safety Features

RoHS3 compliant

Qualified to automotive and industrial standards

Compatibility

Compatible with standard MOSFET gate drive circuits

Application Areas

High-power inverters and converters

Electric vehicle traction and on-board chargers

Industrial motor drives

Switched-mode power supplies

Product Lifecycle

This product is an active and widely available part

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power applications

Robust and reliable design for demanding environments

Easy to integrate with standard MOSFET gate drive requirements

Wide range of applications in industrial, automotive, and power electronics

Frequently Asked Questions(FAQ)

How does the IPB027N10N3GATMA1 perform in high-current switching applications compared to standard logic-level MOSFETs, and what design considerations are necessary for reliable operation?: The IPB027N10N3GATMA1 delivers a continuous drain current of 120A at 25°C (Tc), which is significantly higher than typical logic-level MOSFETs rated for tens of amps. With an Rds(on) of 2.7mΩ at Vgs = 10V and Id = 100A, it achieves very low conduction losses, making it suitable for high-efficiency power conversion. Unlike logic-level devices optimized for gate voltages near 5V, this OptiMOS™ component requires only 4.5–10V to reach full Rds(on), offering compatibility with both 5V and 10V drive systems. However, due to its high input capacitance (14,800 pF at Vds = 50V) and gate charge (206 nC at Vgs = 10V), proper gate drive strength and layout parasitics must be considered to avoid slow switching and excessive EMI. In designs such as synchronous buck converters or motor drives, minimizing loop inductance and using a robust gate driver capable of sourcing/sinking sufficient current (e.g., >1A peak) is essential to maintain performance and prevent thermal runaway.

What are the key differences between the PG-TO263-3 package of the IPB027N10N3GATMA1 and other common TO-263 variants in terms of thermal and electrical performance?: The PG-TO263-3 package used by the IPB027N10N3GATMA1 features a fully isolated leadframe with excellent thermal conductivity, enabling direct soldering to a copper heatsink without additional insulation. This design improves junction-to-heatsink thermal resistance compared to non-isolated TO-263AB versions, allowing more efficient heat dissipation for the device’s 300W maximum power dissipation capability. The exposed tab serves as the source terminal, providing a low-impedance path for both electrical return and heat transfer. When mounted properly, this configuration reduces case-to-ambient thermal resistance significantly, which is critical given the component’s high current density. Compared to smaller packages like SOT-223 or DPAK, the PG-TO263-3 offers superior thermal mass and current handling but requires careful PCB layout to avoid solder voids or insufficient contact area on the thermal pad.

Can the IPB027N10N3GATMA1 be safely used in automotive applications requiring AEC-Q101 qualification, and what environmental factors should be evaluated?: While Infineon markets the IPB027N10N3GATMA1 as part of their automotive-qualified OptiMOS™ series, users must verify that the specific part number has passed AEC-Q101 testing under their internal quality system. Although the device operates over -55°C to 175°C (TJ), indicating broad temperature range suitability, automotive environments also demand resilience to humidity, vibration, and thermal cycling. The MSL rating of Level 1 (unlimited floor life) simplifies assembly handling, but long-term reliability under continuous high-power conditions depends on proper derating—typically operating below 80% of max current and ensuring adequate airflow or heatsinking. Thermal impedance curves from the datasheet should guide board-level thermal analysis to prevent localized hotspots during transient loads.

How does the threshold voltage (Vgs(th)) of the IPB027N10N3GATMA1 influence gate drive requirements in 12V vs. 5V systems?: With a maximum Vgs(th) of 3.5V at Id = 275µA, the IPB027N10N3GATMA1 can be driven effectively by a 5V microcontroller or gate driver. However, achieving minimal Rds(on) requires Vgs to be at least 10V, as specified for 2.7mΩ performance. In a 12V system, applying 10V ensures optimal conduction loss; however, if only 5V is available, Rds(on) will increase slightly, raising losses and self-heating. This trade-off may be acceptable in low-frequency or intermittent duty cycles but not recommended for continuous high-current applications. Therefore, even in 12V architectures, a dedicated gate driver with adjustable output (e.g., 10V) is often preferred to fully leverage the device’s low-resistance characteristics.

What gate charge (Qg) and input capacitance (Ciss) values indicate about switching speed limitations for the IPB027N10N3GATMA1, and how do they affect PWM frequency selection?: The IPB027N10N3GATMA1 exhibits a gate charge of 206 nC at Vgs = 10V and an input capacitance of 14,800 pF at Vds = 50V. These high capacitive parameters result in significant energy required to switch the gate, leading to increased turn-on/turn-off times if driven weakly. For example, a gate driver delivering 2A peak current would require approximately 103 ns to deliver 206 nC. At high PWM frequencies (e.g., above 200 kHz), these delays contribute to dead-time losses and reduced efficiency. Consequently, designers must balance switching frequency against conduction losses. While the low Rds(on) favors high-frequency operation, practical limits arise from switching losses scaling with frequency and Qg × fsw. Thus, frequencies beyond 300–400 kHz may necessitate stronger gate drivers or active Miller clamp circuits to minimize shoot-through risk.

In what scenarios would using two IPB027N10N3GATMA1 devices in parallel be preferable to a single higher-current device, and what challenges does parallel operation introduce?: Parallel operation of two IPB027N10N3GATMA1 devices may be justified when designing modular power stages exceeding 200A while maintaining redundancy or simplifying thermal management across multiple boards. Due to manufacturing variations, each device exhibits slightly different Rds(on) and Vth, causing current imbalance under conduction. Without active balancing, one transistor may carry disproportionate current and overheat. To mitigate this, matched devices should be selected from the same production batch, and source leads must have minimal mismatch in trace resistance. Additionally, gate signals must be tightly synchronized using low-skew traces or dedicated drivers. This approach is common in server power supplies or industrial motor controllers where scalability and fault tolerance outweigh complexity costs.

How does the IPB027N10N3GATMA1 compare to alternative N-channel MOSFETs in terms of figure-of-merit (FOM) for use in synchronous rectification?: The figure-of-merit (FOM) for synchronous rectifiers combines Rds(on) and gate charge (typically Rds(on) × Qg). For the IPB027N10N3GATMA1, this yields 2.7mΩ × 206nC ≈ 0.557 mΩ·nC. Competing devices at similar voltage ratings (e.g., 100V) from vendors like ON Semiconductor or STMicroelectronics offer FOMs ranging from 0.4 to 0.7 mΩ·nC. While the IPB027N10N3GATMA1 sits mid-range, its ultra-low Rds(on) provides a strong advantage in conduction-limited applications such as point-of-load regulators. However, competitors with lower Qg may outperform in high-frequency (>500 kHz) topologies where switching dominates total loss. Designers should evaluate not just FOM but also SOA (Safe Operating Area), dv/dt robustness, and package compatibility when selecting between IPB027N10N3GATMA1 and alternatives.

What precautions are necessary when integrating the IPB027N10N3GATMA1 into a PCB layout to prevent parasitic oscillations and ensure stable operation?: The IPB027N10N3GATMA1’s large die size and high Ciss make it prone to parasitic oscillations caused by inductive coupling between gate, source, and drain paths. To suppress this, keep gate drive loops short (<5 mm) and use a low-inductance ground plane connected directly to the source tab. A small resistor (1–10 Ω) in series with the gate helps dampen ringing, especially if driven by long cables or breadboards. Additionally, place decoupling capacitors close to the drain-source terminals to handle fast di/dt transients. Avoid floating gates during startup by pulling them to a defined voltage via a resistor or zener diode. These practices are critical in high-power DC-DC converters where instability can cause catastrophic failure.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB027N10N3GATMA1

Product Attribute
Part Number	IPB025N10N3GATMA1	IPB025N10N3GE8187ATMA1	IPB029N06N3GE8187ATMA1	IPB029N06N3GATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vgs (Max)	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Drain to Source Voltage (Vdss)	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Rds On (Max) @ Id, Vgs	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Series	-	-	-	-
FET Type	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Technology	-	-	-	-
FET Feature	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-

IPB027N10N3GATMA1 Datasheet PDF

Download IPB027N10N3GATMA1 pdf datasheets and Infineon Technologies documentation for IPB027N10N3GATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: Mult Dev Wafer Chgs 22/Dec/2021.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

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1.00kg-2.00kg	USD$40.00 - USD$80.00
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