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IPB027N10N5ATMA1 - Infineon Technologies

Name: Infineon Technologies IPB027N10N5ATMA1
Brand: Infineon Technologies
SKU: IPB027N10N5ATMA1
Price: 1.981 USD
Availability: InStock
Rating: 5 (8 reviews)

Manufacturer Part Number: IPB027N10N5ATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB027N10N5ATMA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 10,173 pcs available, New & Original

Parts Description: MOSFET N-CH 100V 120A D2PAK

Package: PG-TO263-3

Data sheet: IPB027N10N5ATMA.pdf

Other Related Documents
Part Number Guide.pdf

PCN Assembly/Origin
OptiMOS A/T Chgs 2/Dec/2021.pdf

PCN Packaging
Mult Dev Pkg Box Chg 3/Jan/2018.pdf

RoHs Status: ROHS3 Compliant

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In stock: 10173

Unit Price: $2.969
Subtotal: $0.00

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Quantity	Unit Price	Ext. Price
1+	$2.969	$2.97
10+	$2.589	$25.89
30+	$2.363	$70.89
100+	$2.134	$213.40
500+	$2.028	$1,014.00
1000+	$1.981	$1,981.00

The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IPB027N10N5ATMA1 Tech Specifications
Infineon Technologies - IPB027N10N5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB027N10N5ATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.8V @ 184µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	IPB027

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Parts Introduction

IPB027N10N5ATMA1 (1)

Manufacturer Part Number

IPB027N10N5ATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET for power switching applications

Product Features and Performance

100V drain-source voltage rating

Low on-resistance of 2.7mΩ @ 100A, 10V

Continuous drain current of 120A at 25°C case temperature

Fast switching performance with low gate charge of 139nC @ 10V

Wide operating temperature range of -55°C to 175°C

Optimized for high-efficiency power conversion

Product Advantages

Excellent power density and efficiency

High reliability and robustness

Suitable for a wide range of power applications

Key Technical Parameters

Drain-source voltage (Vdss): 100V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 2.7mΩ @ 100A, 10V

Drain current (Id): 120A @ 25°C case temperature

Input capacitance (Ciss): 10300pF @ 50V

Power dissipation (Pd): 250W @ 25°C case temperature

Quality and Safety Features

RoHS3 compliant

Certified for industrial and automotive applications

Compatibility

Surface mount package (PG-TO263-3) for high-density PCB design

Application Areas

High-efficiency power conversion in industrial, automotive, and consumer electronics applications

Switched-mode power supplies, motor drives, and other power management systems

Product Lifecycle

Current product, no discontinuation or replacement planned

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Optimized for high-efficiency power conversion

Robust and reliable design for industrial and automotive applications

Compatibility with high-density PCB design

Widespread availability and support from a reputable manufacturer

Frequently Asked Questions(FAQ)

How does the IPB027N10N5ATMA1 compare to other Infineon N-channel MOSFETs in terms of on-resistance and current handling for high-power switching applications?: The IPB027N10N5ATMA1 features a low Rds(on) of 2.7 mΩ at Vgs = 10 V and Id = 100 A, enabling efficient conduction with minimal losses. With a continuous drain current of 120 A (Tc), it outperforms many standard logic-level or lower-current devices in power conversion stages. When compared to similar OptiMOS™ parts such as the IPA038N10N5, it offers higher current capacity and better thermal performance due to its 250 W power dissipation rating, making it suitable for synchronous rectification and motor drive circuits where thermal margin is critical.

What gate drive considerations are necessary when using the IPB027N10N5ATMA1 in a 48 V DC-DC converter design?: Given the IPB027N10N5ATMA1’s threshold voltage (Vgs(th)) of 3.8 V at 184 µA, a gate drive voltage above this level is required for full enhancement. For optimal performance, a gate-source voltage of 10 V is recommended, which reduces Rds(on) to 2.7 mΩ and minimizes conduction losses. The gate charge (Qg) of 139 nC at 10 V implies a need for a capable gate driver capable of sourcing sufficient peak current—typically 2–5 A depending on switching frequency—to achieve fast turn-on times and reduce switching losses in high-frequency topologies like buck or half-bridge converters.

Can the IPB027N10N5ATMA1 be used in parallel configurations without additional balancing components?: While the IPB027N10N5ATMA1 supports paralleling due to its robust thermal characteristics and low Rds(on), mismatches in manufacturing can lead to uneven current sharing under dynamic conditions. At 100 A per device, even small differences in threshold voltage or gate capacitance may cause one device to conduct more during transients. Therefore, external gate resistance tuning and layout symmetry are advised, along with thermal coupling, to ensure safe operation across the -55°C to 175°C junction temperature range.

How does the input capacitance (Ciss) of the IPB027N10N5ATMA1 impact switching behavior in high-frequency PWM applications?: With an input capacitance (Ciss) of 10,300 pF at 50 V, the IPB027N10N5ATMA1 exhibits significant Miller effect during turn-off, especially if driven with slow gate drivers. This increases effective gate charge and prolongs switching transitions, increasing both Eon and Eoff energy loss. In a 100 kHz to 500 kHz application, proper gate drive strength and negative bias (if applicable) are essential to minimize these losses and maintain efficiency.

What are the key differences between the PG-TO263-3 package of the IPB027N10N5ATMA1 and traditional TO-220 packages in terms of thermal performance and PCB integration?: The PG-TO263-3 (D²PAK) package used by the IPB027N10N5ATMA1 offers superior thermal resistance due to its exposed metal pad, which allows direct soldering to a copper plane on the PCB, significantly lowering θJA. Compared to a TO-220, it enables much higher power density and easier automated assembly via surface mount processes. However, it requires careful attention to solder voiding and mechanical attachment, particularly under thermal cycling stress from -55°C to 175°C.

Is the IPB027N10N5ATMA1 suitable for use in automotive-grade inverter modules operating near 100 V rails?: Yes, the IPB027N10N5ATMA1 has a Vdss of 100 V with a safety margin, and operates reliably up to 175°C junction temperature, meeting stringent reliability requirements. Its OptiMOS™ series qualification includes robustness against voltage spikes and thermal cycling, making it appropriate for automotive applications such as traction inverters or DC-DC converters in electric vehicles, provided proper snubbing and layout practices are followed.

How does the gate charge profile of the IPB027N10N5ATMA1 influence dead-time optimization in synchronous buck converters?: The total gate charge (Qg) of 139 nC at 10 V determines how quickly the gate voltage reaches the desired level, directly affecting turn-on delay. Since the body diode reverse recovery is negligible in Si MOSFETs, minimizing overlap between high-side and low-side conduction is critical. Accurate estimation of Qg helps set appropriate dead time to prevent shoot-through while maintaining switching speed, especially important in converters targeting >1 MHz operation.

What layout precautions are recommended when mounting the IPB027N10N5ATMA1 to maximize thermal performance and minimize parasitic inductance?: To fully leverage the IPB027N10N5ATMA1’s 250 W power dissipation capability, the exposed tab must be soldered to a large, low-impedance copper area using multiple vias. These vias should connect to internal ground or power planes to enhance heat spreading. Additionally, short, wide traces for gate and source connections reduce parasitic inductance, which is critical for minimizing ringing and ensuring stable switching behavior at high frequencies.

How does the IPB027N10N5ATMA1 compare to a silicon carbide (SiC) MOSFET of similar voltage rating in terms of cost and efficiency trade-offs?: While SiC MOSFETs offer lower losses at very high frequencies, the IPB027N10N5ATMA1 provides competitive performance at a lower cost and operates effectively within 50–500 kHz ranges typical of many industrial and automotive systems. Its Rds(on) of 2.7 mΩ and Qg of 139 nC make it suitable for applications where thermal headroom and system cost are prioritized over extreme frequency performance, offering a balanced solution for mainstream power electronics designs.

What derating guidelines should be applied to the IPB027N10N5ATMA1 when operating continuously at elevated ambient temperatures?: Operating the IPB027N10N5ATMA1 at high ambient temperatures necessitates careful derating due to its maximum junction temperature of 175°C. For example, at 100°C ambient, the available power dissipation drops significantly compared to 25°C. Thermal resistance (θJC + θCA) must be considered; assuming θJA ≈ 3.5°C/W, only about 71 W remains usable, requiring a substantial heatsink or forced airflow to sustain 120 A drain current without exceeding Tj.

Can the IPB027N10N5ATMA1 be safely used in a half-bridge configuration without external protection circuitry?: The IPB027N10N5ATMA1 is structurally capable of half-bridge operation, but without bootstrap or isolated gate drives, floating gate control is challenging. Additionally, lack of built-in clamp diodes means external snubbers are often needed to suppress voltage overshoot during inductive load switching. Proper dead time and layout symmetry remain essential to avoid cross-conduction and protect the device from dv/dt-induced turn-on.

How does the IPB027N10N5ATMA1 perform in terms of avalanche energy rating, and what implications does this have for transient protection design?: Although not explicitly rated for avalanche breakdown, the IPB027N10N5ATMA1’s rugged OptiMOS™ design provides some inherent tolerance to voltage transients. However, in inductive loads or fault conditions, external TVS diodes or RC snubbers are strongly recommended to limit dV/dt and protect the 100 V Vdss rating. Designers should verify compliance with IEC 61000-4 standards if used in harsh environments.

What role does the Moisture Sensitivity Level (MSL) of 1 play in the handling and storage of IPB027N10N5ATMA1 components?: MSL 1 indicates that the IPB027N10N5ATMA1 is not sensitive to moisture and can be stored indefinitely in dry conditions without requiring bake-out before reflow. This simplifies supply chain logistics and ensures reliability in high-volume production, especially important for automated pick-and-place assembly lines common in consumer and industrial electronics manufacturing.

How does the IPB027N10N5ATMA1 support RoHS3 compliance in global supply chains?: As a RoHS3-compliant device, the IPB027N10N5ATMA1 meets all current environmental regulations including restrictions on hazardous substances like lead, mercury, and cadmium. This ensures compatibility with international directives such as EU Directive 2011/65/EU and China RoHS, facilitating market access for automotive, medical, and industrial products requiring full regulatory adherence.

What are the implications of the IPB027N10N5ATMA1’s ECCN code (EAR99) for export control and international procurement?: ECCN EAR99 signifies that the IPB027N10N5ATMA1 is generally subject to minimal export controls under U.S. regulations, meaning it does not require special licenses for most end uses. This simplifies global sourcing and distribution, allowing engineers to integrate the component into designs without complex compliance procedures, provided final product classification is verified.

How does the base product number IPB027 relate to the full part number IPB027N10N5ATMA1, and what does this imply for inventory and variant management?: The IPB027 prefix identifies a family of MOSFETs optimized for high-current, low-Rds(on) applications. Variations such as different voltage ratings or packaging options share this base, enabling scalable design reuse. Understanding this hierarchy aids in managing BOM consistency and predicting availability, especially when substituting within the same platform while maintaining performance parity.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB027N10N5ATMA1

Product Attribute
Part Number	IPB027N10N3GATMA1	IPB026N10NF2SATMA1	IPB025N10N3GE8187ATMA1	IPB026N06NATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Power Dissipation (Max)	-	-	-	-
FET Feature	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Technology	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Series	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Rds On (Max) @ Id, Vgs	-	-	-	-
Vgs (Max)	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Drain to Source Voltage (Vdss)	-	-	-	-
FET Type	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42

IPB027N10N5ATMA1 Datasheet PDF

Download IPB027N10N5ATMA1 pdf datasheets and Infineon Technologies documentation for IPB027N10N5ATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: OptiMOS A/T Chgs 2/Dec/2021.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf

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Customer Reviews

Evaluation: 10 Articles

Arch***ct

Jul 15, 2026

Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.
FPGA***lorer88

Jul 7, 2026

The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.
Nath***oleman

Jun 29, 2026

Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.
Emil***rperTech

Jun 23, 2026

Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.
Liam***terTech

Jun 15, 2026

Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.
Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.
Yuki***aka88

May 26, 2026

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。
Stev***aker

May 20, 2026

Solid diode for power rectification. Works well in switching circuits.
Bran***Lewis

May 11, 2026

Compact FPGA with good performance. Suitable for basic signal processing tasks.

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America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

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1.00kg-2.00kg	USD$40.00 - USD$80.00
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