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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IPB029N06NF2SATMA1~~

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IPB029N06NF2SATMA1 - Infineon Technologies

Manufacturer Part Number: IPB029N06NF2SATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 98D-IPB029N06NF2SATMA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 28,584 pcs available, New & Original

Parts Description: TRENCH 40<-<100V

Package: PG-TO263-3

Data sheet: -

RoHs Status: ROHS3 Compliant

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In stock: 28584

Unit Price: $1.376
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Specifications

IPB029N06NF2SATMA1 Tech Specifications
Infineon Technologies - IPB029N06NF2SATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB029N06NF2SATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.3V @ 80µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-3
Series	StrongIRFET™2
Rds On (Max) @ Id, Vgs	2.9mOhm @ 70A, 10V
Power Dissipation (Max)	3.8W (Ta), 150W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 120A (Tc)
Base Product Number	IPB029

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical performance differences between the IPB029N06NF2SATMA1 and similar 60V N-channel MOSFETs commonly used in motor drive applications?: The IPB029N06NF2SATMA1 stands out due to its combination of low Rds(on) of 2.9mΩ at 10V Vgs and high continuous drain current capability of 120A in TO-263 package, enabling efficient power delivery with minimal conduction losses. While many 60V MOSFETs offer comparable voltage ratings, few achieve such low on-resistance at elevated current levels without significant derating. For example, in a typical BLDC motor controller operating at 48V bus voltage with peak currents above 50A, the IPB029’s low Rds(on) translates into lower I²R losses—potentially reducing total system loss by 15–20% compared to standard logic-level devices. This efficiency advantage becomes critical in thermally constrained designs where junction temperature must remain below 150°C under continuous operation.

How does the gate charge (Qg) of the IPB029N06NF2SATMA1 compare to alternative N-channel FETs when driving high-side configurations using bootstrap circuits?: With a maximum gate charge (Qg) of 102 nC at 10V Vgs, the IPB029N06NF2SATMA1 offers moderate switching speed suitable for most PWM frequencies up to 20 kHz in motor control applications. In comparison, some newer SiC or GaN-based alternatives may have higher Qg but faster intrinsic switching, while older generation MOSFETs often exceed 150 nC. However, the IPB029 balances Qg with low Rds(on), making it particularly effective in synchronous rectification scenarios where minimizing conduction loss outweighs ultra-fast switching benefits. When paired with a bootstrap capacitor rated for 50V and a driver capable of sourcing 2A peak current, the device can sustain stable turn-on even during high-duty-cycle phases common in PFC or DC-DC converters.

Can the IPB029N06NF2SATMA1 be safely operated near its maximum junction temperature of 175°C in automotive environments with intermittent fault conditions?: Yes, the IPB029N06NF2SATMA1 is designed for extended operation up to 175°C junction temperature, which aligns with AEC-Q101 qualification standards and makes it suitable for automotive-grade power stages. However, sustained operation close to TJ(max) requires careful consideration of thermal impedance paths. The PG-TO263-3 package provides excellent heat sinking through the exposed tab, but PCB layout—especially copper area under the tab—is critical. In practice, achieving full 150W dissipation requires a robust thermal interface and adequate airflow; otherwise, self-heating from Rds(on) losses alone may elevate junction temperature significantly during overload events. Thus, while thermally resilient, real-world reliability depends on system-level thermal management rather than device specifications alone.

What input capacitance (Ciss) behavior should engineers expect from the IPB029N06NF2SATMA1 when used in resonant converter topologies like LLC half-bridge?: The IPB029N06NF2SATMA1 exhibits an input capacitance (Ciss) of up to 4600 pF at 30V Vds, which can influence resonance timing and zero-voltage switching margins in LLC converters. This relatively high Ciss compared to trench-free variants increases Miller plateau duration during turn-off, potentially limiting achievable switching frequency if gate drive current is insufficient. In a typical 600V half-bridge operating at 100 kHz, this capacitance contributes approximately 1.5 ns to total turn-off time assuming 1A gate sink current. Engineers should verify that the selected driver can deliver sufficient peak current to charge/discharge Ciss within the desired dead time, especially when paralleling multiple IPB029 devices to share load current.

Is the IPB029N06NF2SATMA1 suitable for use in high-frequency DC-DC buck converters targeting data center server power supplies?: While the IPB029N06NF2SATMA1 supports switching frequencies up to several hundred kHz, its relatively high Qg (102 nC) and moderate Ciss make it less optimal than specialized low-gate-charge MOSFETs for MHz-range buck converters. However, in non-isolated point-of-load regulators operating below 500 kHz, the IPB029’s low Rds(on) and 60V rating allow high efficiency despite switching penalties. For instance, in a 48V-to-1V step-down stage delivering 100A, the dominant loss mechanism shifts from conduction to switching if not properly managed. Therefore, while feasible, designers must optimize gate drive strength and minimize parasitic inductance to realize the full benefit of the IPB029N06NF2SATMA1 in such applications.

How does the threshold voltage (Vgs(th)) of the IPB9N06NF2SATMA1 impact compatibility with 3.3V and 5V logic controllers?: The IPB029N06NF2SATMA1 has a maximum threshold voltage (Vgs(th)) of 3.3V at 80µA Id, which means it can be fully enhanced by standard 5V logic signals but may not achieve minimum Rds(on) under 3.3V gate drive. At Vgs = 3.3V, the Rds(on) typically rises by 30–50% compared to operation at 10V Vgs, increasing conduction losses in high-current paths. This characteristic necessitates either a gate boost circuit (e.g., 10V–12V drive) or selection of a dedicated logic-level MOSFET if interfacing directly with microcontrollers running at 3.3V. In battery-powered motor controllers using 3.3V MCUs, this trade-off between simplicity and efficiency should be evaluated based on duty cycle and average current.

What packaging advantages does the PG-TO263-3 case provide for the IPB029N06NF2SATMA1 in industrial motor drives?: The PG-TO263-3 package features an exposed thermal pad connected to the source terminal, enabling direct solder attachment to a large copper plane on the PCB. This design enhances thermal conductivity—reducing junction-to-ambient thermal resistance by up to 40% compared to conventional TO-263 variants without exposed pads. For the IPB029N06NF2SATMA1, this facilitates handling of continuous dissipations up to 150W when properly heatsinked, making it ideal for inverter modules in servo drives or traction systems. Additionally, the three-terminal configuration (drain, gate, source+tab) simplifies layout and improves electromagnetic compatibility by minimizing loop area in power traces.

How should the IPB029N06NF2SATMA1 be evaluated for ruggedness in inductive load switching scenarios such as relay or solenoid control?: Although optimized for hard-switching applications, the IPB029N06NF2SATMA1 incorporates robust ESD protection and avalanche energy handling suitable for managing inductive kickback in relays or solenoids. Its 60V Vdss rating allows safe operation with loads up to 48V nominal systems, provided snubber networks (RC or TVS diodes) are employed across the switch terminals. During turn-off transients exceeding 60V, the device’s internal body diode limits reverse recovery stress, but repeated exposure to high di/dt events may degrade long-term reliability. Therefore, while functional in basic solenoid switching, dedicated protection circuitry remains essential to prevent premature failure from voltage overshoot or ringing.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB029N06NF2SATMA1

Product Attribute
Part Number	IPB029N06N3GATMA1	IPB029N06N3GE8187ATMA1	IPB027N10N5ATMA1	IPB027N10N3GATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Technology	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
FET Feature	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Vgs (Max)	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Series	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
FET Type	-	-	-	-

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Common Countries Logistic Time Reference
Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

Note:: The above table is for reference only. There may have some data bias for the uncontrollable factors.
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