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IPB030N08N3GATMA1 - Infineon Technologies

Name: Infineon Technologies IPB030N08N3GATMA1
Brand: Infineon Technologies
SKU: IPB030N08N3GATMA1
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer Part Number: IPB030N08N3GATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IPB030N08N3GATMA1

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 15,332 pcs available, New & Original

Parts Description: MOSFET N-CH 80V 160A TO263-7

Package: PG-TO263-7

Data sheet: IPB030N08N3GATM.pdf

Other Related Documents
Part Number Guide.pdf

PCN Assembly/Origin
Mult Dev Wafer Chgs 22/Dec/2021.pdf

PCN Packaging
Mult Dev Pkg Box Chg 3/Jan/2018.pdf

RoHs Status: ROHS3 Compliant

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In stock: 15332

Specifications

IPB030N08N3GATMA1 Tech Specifications
Infineon Technologies - IPB030N08N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB030N08N3GATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.5V @ 155µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO263-7
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	3mOhm @ 100A, 10V
Power Dissipation (Max)	214W (Tc)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Base Product Number	IPB030

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Parts Introduction

IPB030N08N3GATMA1 (1)

Manufacturer Part Number

IPB030N08N3GATMA1

Manufacturer

Infineon Technologies

Introduction

The IPB030N08N3GATMA1 is a high-performance N-channel MOSFET from Infineon's OptiMOS series, designed for a wide range of power conversion and control applications.

Product Features and Performance

Operates at voltages up to 80V

Low on-resistance of 3mOhm @ 100A, 10V

High current capability of 160A continuous drain current at 25°C

Fast switching with input capacitance of 8110pF @ 40V

Wide operating temperature range of -55°C to 175°C

Maximum power dissipation of 214W at Tc

Product Advantages

Excellent efficiency and thermal performance

Robust design for reliable operation

Suitable for high-current, high-power applications

Compatible with various gate drive voltages

Key Technical Parameters

Drain to Source Voltage (Vdss): 80V

Gate to Source Voltage (Vgs): ±20V

Drain Current (Id): 160A @ 25°C

On-Resistance (Rds(on)): 3mOhm @ 100A, 10V

Input Capacitance (Ciss): 8110pF @ 40V

Gate Charge (Qg): 117nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for various mounting types, including surface mount

Compatibility

Compatible with a wide range of power conversion and control applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and consumer electronics

Automotive electronics

Product Lifecycle

The IPB030N08N3GATMA1 is an active product in Infineon's portfolio, with no indication of discontinuation.

Replacement or upgrade options may be available from Infineon, depending on evolving market and application requirements.

Several Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power applications

Robust design and wide operating temperature range for reliable operation

Compatibility with various gate drive voltages for versatile integration

Surface mount package option for flexible board-level design

Trusted Infineon quality and reliability in a wide range of industries

Frequently Asked Questions(FAQ)

What is the maximum continuous drain current and thermal resistance junction-to-case for the IPB030N08N3GATMA1 at 25°C, and how does this impact power dissipation in high-load applications?: The IPB030N08N3GATMA1 supports a continuous drain current of 160 A at 25°C when mounted on a heatsink (Tc), which enables robust performance in high-current applications such as motor drives or battery management systems. With a thermal resistance junction-to-case (RthJC) derived from the 214 W power dissipation capability, the device can manage significant heat without exceeding its 175°C junction temperature. This thermal margin allows sustained operation under full load while maintaining reliability, provided adequate heatsinking is implemented.

How does the Rds(on) of 3 mΩ at 10 V gate-source voltage compare to similar OptiMOS™ N-channel MOSFETs in the same voltage class, and what are the implications for efficiency in synchronous rectification?: The IPB030N08N3GATMA1 exhibits an exceptionally low Rds(on) of 3 mΩ at Vgs = 10 V, which is among the lowest in the 80 V OptiMOS™ portfolio. When compared to competing devices with typical Rds(on) values ranging from 4.5 mΩ to 6 mΩ under similar conditions, this translates to approximately 30–50% lower conduction losses. In synchronous buck converters operating at 160 A, this results in measurable reductions in total power loss, directly improving system efficiency—especially critical in high-density, thermally constrained designs.

What is the gate charge (Qg) and input capacitance (Ciss) of the IPB030N08N3GATMA1, and how do these parameters affect switching behavior in high-frequency DC-DC converters?: The IPB030N08N3GATMA1 has a maximum gate charge (Qg) of 117 nC at Vgs = 10 V and an input capacitance (Ciss) of 8110 pF at Vds = 40 V. These values indicate moderate capacitive loading relative to larger die-area devices, suggesting that drive current requirements for fast switching are manageable with standard gate drivers. However, at switching frequencies above 200 kHz, the cumulative energy dissipated during gate charging (E = ½ × Ciss × Vgs² × fsw) becomes non-trivial, necessitating careful selection of gate resistance and driver strength to balance switching speed and EMI.

Can the IPB030N08N3GATMA1 be used in parallel configurations for higher current applications, and what precautions are required to ensure current sharing stability?: While the IPB030N08N3GATMA1 supports paralleling due to its low Rds(on) mismatch and positive temperature coefficient of resistance, successful implementation requires active balancing techniques. Mismatches in threshold voltage (Vgs(th) up to 3.5 V @ 155 µA) and Rds(on) across units can lead to uneven current distribution under dynamic loads. Designers should employ source resistors, common gate drivers, and matched layout symmetry to stabilize current sharing, especially in applications like uninterruptible power supplies (UPS) where reliability is critical.

What are the recommended gate drive voltage levels for minimizing losses in the IPB030N08N3GATMA1, and how does Vgs affect Rds(on) and switching speed?: For optimal performance, the IPB030N08N3GATMA1 should be driven with Vgs = 10 V, which minimizes Rds(on) to 3 mΩ at Id = 100 A. Driving at 6 V increases Rds(on) significantly—potentially by 40–60%—due to incomplete channel formation, increasing conduction loss. Higher gate voltages reduce turn-on time but also increase gate drive power and risk overvoltage if not controlled. Thus, a balanced choice of 10 V provides the best compromise between Rds(on), switching speed, and robustness within the ±20 V absolute maximum rating.

How does the IPB030N08N3GATMA1 handle transient voltage spikes, and what protection measures are necessary in automotive or industrial environments?: Although the IPB030N08N3GATMA1 has a VDSS rating of 80 V, transient spikes in harsh environments—such as load dump or inductive kickback—can exceed this value. Since the device lacks internal avalanche protection, external snubber circuits or TVS diodes are recommended to clamp voltages above 80 V. Additionally, ensuring gate-source clamping during fault conditions protects against VGS exceeding ±20 V, which could degrade long-term reliability.

What is the significance of the PG-TO263-7 package in the IPB030N08N3GATMA1, and how does it influence thermal management in compact PCB designs?: The IPB030N08N3GATMA1 uses the PG-TO263-7 package, which features a metal tab connected to the drain for direct attachment to a heatsink or copper plane. This design enhances thermal conductivity, enabling the device to dissipate up to 214 W continuously via conduction cooling. In space-constrained layouts, mounting the tab to a large inner-layer copper pour or external heatsink becomes essential to maintain junction temperatures below 150°C during prolonged high-current operation.

How does the operating temperature range (-55°C to 175°C TJ) of the IPB030N08N3GATMA1 support use in extreme environments, and what derating considerations apply for long-term reliability?: With a maximum junction temperature of 175°C, the IPB030N08N3GATMA1 is suitable for demanding applications such as aerospace, industrial automation, or EV traction inversions. However, for enhanced lifetime and reliability, engineers typically derate the maximum allowable junction temperature to ≤150°C. This reduces stress on the silicon interface and packaging materials, effectively extending operational life under continuous thermal cycling or high ambient temperatures.

What is the moisture sensitivity level (MSL) and RoHS status of the IPB030N08N3GATMA1, and how should it be handled during manufacturing?: The IPB030N08N3GATMA1 has an MSL rating of 1, indicating unlimited shelf life under normal storage conditions, with no special pre-bake requirements before reflow soldering. It is fully RoHS3 compliant, meaning it adheres to all current European Union restrictions on hazardous substances. This simplifies compliance documentation and ensures compatibility with global electronics manufacturing standards.

How does the base product number IPB030 relate to other variants in Infineon’s OptiMOS™ lineup, and what differences might exist in electrical characteristics?: The IPB030N08N3GATMA1 shares the base product number IPB030 with other TO263-7 packaged N-channel MOSFETs. Variants may differ in voltage ratings (e.g., 60 V or 100 V), Rds(on), or gate charge. Designers must verify key parameters such as Rds(on) at 10 V, Qg, and Ciss across submodels to ensure consistency in switching performance and thermal behavior within a given topology.

What are the typical applications where the IPB030N08N3GATMA1 offers superior performance over alternative discrete MOSFETs?: The IPB030N08N3GATMA1 excels in high-efficiency DC-DC converters, server power supplies, and electric vehicle onboard chargers, where its combination of low Rds(on), high current capability, and advanced packaging enables compact, thermally efficient designs. Its performance advantage becomes most evident in systems requiring >150 A continuous current with switching frequencies above 150 kHz, outperforming older-generation MOSFETs in both conduction and switching losses.

How does the gate threshold voltage (Vgs(th)) of 3.5 V @ 155 µA influence logic-level drive compatibility in digital control systems?: The IPB030N08N3GATMA1’s maximum Vgs(th) of 3.5 V at 155 µA means it may not fully enhance at 3.3 V logic levels, resulting in higher Rds(on) than optimal. While functional, full saturation requires Vgs ≥ 6–7 V. Therefore, in microcontroller-driven applications, a dedicated gate driver or bootstrap circuit is preferred to achieve reliable low-loss operation, avoiding reliance on marginal gate overdrive.

What role does the OptiMOS™ technology play in the performance characteristics of the IPB030N08N3GATMA1, and how does it improve upon previous generation MOSFETs?: The IPB030N08N3GATMA1 benefits from Infineon’s OptiMOS™ process enhancements, including optimized cell pitch and reduced parasitic capacitances. This leads to lower Qg and Ciss compared to earlier generations, improving switching speed without sacrificing Rds(on). As a result, the device achieves better figure-of-merit (FOM = Rds(on) × Qg) scores, enabling higher efficiency and faster switching in power converter topologies like LLC resonant converters or active clamp forward stages.

Is the IPB030N08N3GATMA1 suitable for hard-switching topologies such as phase-shifted full-bridge converters, and why or why not?: Yes, the IPB030N08N3GATMA1 is well-suited for hard-switching topologies due to its relatively low output capacitance (Coss) and fast intrinsic diode recovery characteristics inherent to the OptiMOS™ architecture. However, zero-voltage switching (ZVS) margins must be verified to prevent excessive turn-on losses. With proper dead-time management and snubbing, the device handles voltage and current transitions effectively, making it a strong candidate for high-power isolated converters.

How should the IPB030N08N3GATMA1 be evaluated for EMI performance in switch-mode power supplies, and what layout practices minimize radiated emissions?: The IPB030N08N3GATMA1 contributes to EMI through rapid dv/dt and di/dt transitions during switching. To mitigate this, designers should minimize loop inductance in the power path, use short gate traces with controlled impedance, and select appropriate gate resistor values (typically 2–5 Ω) to dampen oscillations. Proper grounding of the source terminal and shielding of high-impedance nodes further reduce conducted and radiated noise in sensitive frequency bands.

What is the expected lifetime under continuous 160 A operation at 125°C case temperature, assuming standard reliability models?: Under continuous operation at 160 A and Tc = 125°C, the IPB030N08N3GATMA1 experiences elevated junction temperatures (~140–150°C). Using Arrhenius-based failure rate models and Infineon’s typical mission profile data, estimated lifetime exceeds 50,000 hours, assuming proper thermal management and no overload events. Accelerated aging tests confirm stable gate oxide integrity and metallization reliability under these conditions, supporting long-term deployment in industrial and automotive systems.

How does the package’s 7-pin configuration (PG-TO263-7) facilitate improved thermal and electrical performance compared to standard TO-263 variants?: The PG-TO263-7 package includes six external leads plus a drain-connected tab, providing multiple connection points for Kelvin sensing and enhanced current routing. This reduces parasitic inductance and improves signal integrity in high-speed switching. Thermally, the exposed pad allows direct attachment to thermal vias or heatsinks, lowering thermal resistance and improving heat spreading—critical for achieving the rated 214 W dissipation in the IPB030N08N3GATMA1.

What steps should be taken to validate the IPB030N08N3GATMA1 in a real-world application before production release?: Before finalizing a design using the IPB030N08N3GATMA1, engineers should conduct thermal imaging under full load, measure actual Rds(on) at various Vgs and Iq levels, and perform switching loss characterization with oscilloscope probes. Load transient response, shoot-through immunity, and ESD robustness (per HBM >2 kV) should also be tested. Correlation between simulation models and measured data ensures accurate prediction of efficiency, EMI, and reliability in the target environment.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB030N08N3GATMA1

Product Attribute
Part Number	IPB031N08N5ATMA1	IPB029N06N3GE8187ATMA1	IPB029N06N3GATMA1	IPB031NE7N3GATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
FET Feature	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Series	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Vgs(th) (Max) @ Id	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
FET Type	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Power Dissipation (Max)	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Drain to Source Voltage (Vdss)	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
Technology	-	-	-	-
Vgs (Max)	-	-	-	-

IPB030N08N3GATMA1 Datasheet PDF

Download IPB030N08N3GATMA1 pdf datasheets and Infineon Technologies documentation for IPB030N08N3GATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: Mult Dev Wafer Chgs 22/Dec/2021.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf

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