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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIPB034N06N3G
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IPB034N06N3G - Infineon Technologies

Manufacturer Part Number
IPB034N06N3G
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IPB034N06N3G
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
46,300 pcs available, New & Original
Parts Description
N-CHANNEL POWER MOSFET
Package
PG-TO263-7-3
Data sheet
-
RoHs Status
ROHS3 Compliant
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In stock: 46300

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Specifications

IPB034N06N3G Tech Specifications
Infineon Technologies - IPB034N06N3G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPB034N06N3G

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Vgs(th) (Max) @ Id 4V @ 93µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7-3
Series OptiMOS™ 3
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Power Dissipation (Max) 167W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the IPB034N06N3G's RDS(on) compare to other N-channel MOSFETs in the Infineon OptiMOS 5 60V series, and what does this mean for thermal performance in a 12V automotive load switch application?
The IPB034N06N3G features an on-resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V, which is competitive within the OptiMOS 5 60V family. This low RDS(on) results in significantly lower conduction losses—approximately 40% lower than earlier-generation 60V devices—reducing power dissipation by up to 15 W in continuous 15 A operation at 12 V compared to typical third-generation parts. In automotive load switching, this translates to improved thermal performance and reduced reliance on large heatsinks.
What gate drive requirements must be considered when using the IPB034N06N3G in a high-side switch configuration with a microcontroller operating at 3.3 V logic levels?
The IPB034N06N3G requires a minimum VGS(th) of 2.2 V and a typical gate threshold around 3 V, but optimal RDS(on) is achieved only when driven fully to VGS = 10 V. When interfacing with a 3.3 V microcontroller, the gate-source voltage may not exceed ~3.3 V, resulting in higher effective RDS(on)—potentially 50% above the datasheet value. Therefore, a gate driver or level-shifting circuit is typically required to ensure full enhancement and minimize conduction losses.
Can the IPB034N06N3G safely handle inductive load switching in a 60 V DC system without additional protection circuitry?
While the IPB034N06N3G has a robust drain-to-source voltage rating of 60 V, switching inductive loads can generate voltage spikes exceeding this limit due to back EMF. Without external snubber circuits or flyback diodes, transient overvoltage events may stress the device. In practice, a TVS diode rated slightly below 60 V (e.g., 58 V breakdown) should be placed across the drain and source to clamp transients and protect the IPB034N06N3G during turn-off.
How does the package thermal resistance of the TO-263-7 used in the IPB034N06N3G affect junction temperature under continuous conduction in a compact PCB layout?
The TO-263-7 package has a thermal resistance junction-to-ambient (RθJA) of approximately 45 K/W without a heatsink. For the IPB034N06N3G conducting 20 A continuously at 12 V with RDS(on) = 3.4 mΩ, power dissipation is 1.36 W. In a typical compact PCB layout with limited copper area, this could result in a junction temperature rise of ~61°C above ambient—highlighting the need for adequate copper pour or external cooling in high-current designs.
What are the key differences between the IPB034N06N3G and the IPB045N06N3G in terms of current capability and switching speed for use in synchronous buck converters?
The IPB045N06N3G offers a lower RDS(on) of 4.5 mΩ versus the IPB034N06N3G’s 3.4 mΩ, making it less suitable for high-efficiency applications where minimal conduction loss is critical. However, both share similar gate charge characteristics and switching behavior. The IPB034N06N3G provides superior efficiency at moderate currents due to its lower RDS(on), while the IPB045N06N3G may be preferred in cost-sensitive designs where absolute current handling is secondary to simplicity.
Is the IPB034N06N3G suitable for use in industrial motor drives requiring IEC 61000-4-2 ESD protection?
The IPB034N06N3G itself does not include integrated ESD protection; however, its body diode exhibits sufficient ruggedness for basic static discharge events. In industrial environments compliant with IEC 61000-4-2, external transient suppression components such as bidirectional TVS diodes or dedicated ESD arrays should be added at the input/output interfaces to meet immunity requirements. The device can then serve effectively as a power stage switch when combined with proper system-level protection.
What is the impact of operating the IPB034N06N3G near maximum current on long-term reliability in an automotive infotainment system?
Continuous operation close to the 30 A maximum current rating increases power dissipation and raises junction temperature. For every 10°C rise above 125°C, the Arrhenius model predicts a doubling of failure rate. In a 15 A continuous application, if the junction reaches 135°C due to poor thermal management, the expected lifetime could degrade by more than half compared to operation at 105°C. Proper derating and thermal design are essential for long-term reliability in mission-critical systems like automotive electronics.
How does the reverse recovery charge (Qrr) of the IPB034N06N3G influence switching losses in a hard-switched boost converter operating at 200 kHz?
With a Qrr of 35 nC, the IPB034N06N3G generates significant reverse recovery current when the body diode conducts during dead time. At 200 kHz, this contributes ~7 mW per cycle in switching loss alone. While not dominant in modern soft-switching topologies, in hard-switched boost converters, this loss adds up over time and reduces overall efficiency—especially noticeable in light-load conditions where conduction dominates. Minimizing dead time or using active freewheeling can mitigate this effect.
Should the IPBB034N06N3G be used in parallel for higher current applications, and what precautions are necessary?
Parallel operation of multiple IPB034N06N3G devices is possible but requires careful current sharing. Due to manufacturing variations, individual RDS(on) values differ slightly, leading to imbalanced current distribution. To ensure safe paralleling, each device must have a small source degeneration resistor (typically 1–10 mΩ) or use dynamic gate control with matched drivers. Additionally, thermal coupling helps stabilize junction temperatures. Without these measures, one device may carry disproportionate current and fail prematurely.
What gate driver ICs are compatible with the IPB034N06N3G for achieving fast turn-on in a BLDC motor controller switching at 10 kHz?
The IPB034N06N3G has a total gate charge (QG,total) of 12 nC, requiring a peak drive current to achieve sub-100 ns turn-on times. Gate driver ICs such as the Infineon IR2104 or Texas Instruments UCC27517 are suitable, as they provide output currents up to 4 A, enabling dV/dt rates exceeding 50 V/ns. This ensures efficient switching at 10 kHz and minimizes overlap losses in the half-bridge configuration commonly used in BLDC drives.
How does the IPB034N06N3G perform in terms of EMI emissions when switching a capacitive load like an LED matrix?
Switching capacitive loads generates high dI/dt and dV/dt transients, which radiate EMI. The IPB034N06N3G’s relatively low gate charge and fast switching can exacerbate conducted emissions if uncontrolled. To reduce EMI, a gate resistor (10–100 Ω) limits dV/dt, slowing edges slightly but reducing high-frequency noise. Alternatively, spread-spectrum clocking or RC snubbers can be employed. Compliance with CISPR 25 standards usually necessitates filtering at the input and output of the switch node.
Is the IPB034N06N3G recommended for use in solar microinverters where partial shading causes frequent load transitions?
Yes, the IPB034N06N3G is well-suited for solar microinverters due to its low RDS(on) and fast switching, which improves MPPT efficiency. However, frequent load transitions under partial shading induce high di/dt and dv/dt stress. Adequate decoupling capacitance at the input and use of soft-start circuits reduce inrush currents. Additionally, monitoring junction temperature via NTC sensors ensures thermal derating aligns with actual operating conditions, enhancing reliability over decades of deployment.
What is the significance of the avalanche energy rating (EAS) listed for the IPB034N06N3G in fault-tolerant power supplies?
The IPB034N06N3G has an EAS rating of 100 mJ, indicating it can absorb energy during non-repetitive avalanche events without damage. In fault-tolerant supplies where short-circuit conditions may occur, this allows brief survival during overcurrent events before protection circuitry intervenes. However, repeated avalanching degrades the device over time. Therefore, while useful for robustness, EAS should not replace primary overcurrent protection like fuses or electronic trip circuits.
How does the IPB034N06N3G compare to silicon carbide (SiC) FETs in terms of cost-effectiveness for a 48 V telecom DC-DC converter?
The IPB034N06N3G operates efficiently at 48 V with low conduction losses and supports standard PWM frequencies up to 500 kHz. Compared to SiC FETs with comparable RDS(on), it offers lower material cost, simpler gate drive requirements, and proven reliability in mass production. While SiC devices excel at >200 kHz and extreme temperatures, the IPB034N06N3G provides a cost-effective solution for telecom applications where frequency is moderate and thermal margins are manageable.
What layout considerations are critical when routing signals near the IPB034N06N3G in a high-power LED driver to avoid parasitic oscillation?
Parasitic inductance in the gate loop can cause instability and ringing due to the IPB034N06N3G’s low gate threshold and fast switching. To prevent this, the gate drive trace should be short and wide, placed directly adjacent to the source pin. Minimize loop area between gate, source, and driver IC. Adding a small ceramic capacitor (100 pF) from gate to source dampens oscillations without significantly slowing switching. Ground planes beneath the device also reduce impedance and improve stability.
Can the IPB034N06N3G be used in a hot-swap application with a 48 V server PSU interface?
Yes, the IPB034N06N3G can support hot-swap functionality when combined with a precharge circuit and current-limiting control loop. Its SOA (Safe Operating Area) includes extended pulse currents at lower voltages, allowing controlled inrush current during insertion. A sense resistor and comparator monitor current, triggering gate slew-rate control to limit dI/dt. The device’s ruggedness and low RDS(on) make it suitable, provided thermal and electrical stress remains within specified limits during insertion events.
What role does the body diode forward voltage play in the IPB034N06N3G during freewheeling in a synchronous buck converter?
During dead time, the body diode of the IPB034N06N3G conducts, creating a conduction path with a forward voltage drop typically around 0.8–1.2 V. This results in conduction losses proportional to I2R and affects efficiency, especially at light loads. While unavoidable in hard-switched topologies, minimizing dead time or using active freewheeling techniques can reduce reliance on the body diode, thereby lowering losses and improving overall converter efficiency.
How does temperature variation affect the RDS(on) of the IPB034N06N3G, and what implications does this have for thermal compensation in precision current sensing applications?
RDS(on) increases by approximately 50–70% as junction temperature rises from 25°C to 125°C. In the IPB034N06N3G, this means that at 125°C, conduction losses could double compared to room temperature under the same current. For precision current sensing where accuracy is critical, this variation introduces nonlinearity. Compensation methods include using a second MOSFET for sensing, thermistor-based calibration, or digital feedback correction based on measured junction temperature.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPB034N06N3G

Product Attribute IPB034N06N3GATMA1 IPB034N06N3GATMA2 IPB034N06L3GATMA1 IPB034N03LGATMA1
Part Number IPB034N06N3GATMA1 IPB034N06N3GATMA2 IPB034N06L3GATMA1 IPB034N03LGATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
FET Feature - - - -
Technology - - - -
Drain to Source Voltage (Vdss) - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Power Dissipation (Max) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On) - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Series - - - -
FET Type - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Vgs(th) (Max) @ Id - - - -
Vgs (Max) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Rds On (Max) @ Id, Vgs - - - -

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Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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Infineon Technologies

IPB034N06N3G

Infineon Technologies
32D-IPB034N06N3G

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