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IR2113PBF - Infineon Technologies

Manufacturer Part Number
IR2113PBF
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IR2113PBF
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
17,093 pcs available, New & Original
Parts Description
IC GATE DRVR HALF-BRIDGE 14DIP
Package
14-DIP
Data sheet
IR2113PBF.pdf

PCN Design/Specification

Cylindrical Battery Holders.pdf

PCN Assembly/Origin

2.73KHz.pdf

Other Related Documents

Part Number Guide.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 17093
  • Unit Price: $2.093
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $2.093 $2.09
10+ $1.824 $18.24
25+ $1.665 $41.63
100+ $1.504 $150.40
500+ $1.429 $714.50
1000+ $1.396 $1,396.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IR2113PBF Tech Specifications
Infineon Technologies - IR2113PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IR2113PBF

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Voltage - Supply 3.3V ~ 20V
Supplier Device Package 14-DIP
Series -
Rise / Fall Time (Typ) 25ns, 17ns
Package / Case 14-DIP (0.300', 7.62mm)
Package Tube
Operating Temperature -40°C ~ 150°C (TJ)
Number of Drivers 2
Product Attribute Attribute Value
Mounting Type Through Hole
Logic Voltage - VIL, VIH 6V, 9.5V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Current - Peak Output (Source, Sink) 2A, 2A
Channel Type Independent
Base Product Number IR2113

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Parts Introduction

IR2113PBF Image
IR2113PBF (1)

Manufacturer Part Number

IR2113PBF

Manufacturer

Infineon Technologies

Introduction

IR2113PBF is a high-power gate driver designed for half-bridge applications within power management systems, suitable for driving IGBTs and N-Channel MOSFETs.

Product Features and Performance

Supports half-bridge driven configuration

Controls two independent channels

Compatible with IGBT, N-Channel MOSFET gate types

Operating supply voltage range: 3.3V to 20V

High rise and fall times: 25ns and 17ns respectively

High side voltage tolerance up to 600V (Bootstrap)

Non-inverting input type

Peak output current: 2A (Source), 2A (Sink)

Operational at a temperature range of -40°C to 150°C

Through-hole mounting type

Product Advantages

High-current drive capability

Compatibility with high voltage applications

Robust thermal performance suited for extreme environments

Simple integration due to DIP-14 packaging

IR2113PBF Image
IR2113PBF (2)

Key Technical Parameters

Voltage Supply: 3.3V ~ 20V

Logic Voltage VIL, VIH: 6V, 9.5V

Current Peak Output (Source, Sink): 2A, 2A

High Side Voltage Max (Bootstrap): 600 V

Rise / Fall Time (Typ): 25ns, 17ns

Quality and Safety Features

Extended temperature operational capability ensures reliability under thermal stress

Compatibility

Compatible with IGBT and N-channel MOSFETs

Application Areas

Suitable for high-power applications in industrial, automotive, and consumer electronics sectors.

Product Lifecycle

Marked as 'Not For New Designs,' indicating that it may be nearing the end of its production life, with potential recommendations for replacements or next-generation upgrades available from Infineon Technologies.

Several Key Reasons to Choose This Product

High-voltage operation up to 600V conducive for robust applications

Dual independent channel operation facilitates complex designs

Enhanced thermal performance making it ideal for high-temperature environments

Suitable for a range of power management applications across various industries due to its versatile features and high reliability in extreme conditions.

Frequently Asked Questions(FAQ)

How does the IR2113PBF compare to other half-bridge gate driver ICs in terms of supply voltage range and logic compatibility when driving high-side N-channel MOSFETs with bootstrap circuits?
The IR2113PBF operates across a supply voltage range of 3.3V to 20V, making it suitable for both low-voltage digital systems and higher-voltage analog control interfaces. Its logic-level inputs feature VIH = 9.5V and VIL = 6V, which ensures reliable noise immunity even at the lower end of the supply range. This threshold design supports direct interfacing with standard TTL or CMOS logic signals without requiring level-shifting components, unlike some drivers that mandate rail-to-rail logic compatibility. When used with bootstrap capacitors for high-side gate drive, the device maintains consistent performance up to a maximum high-side voltage of 600V, which is critical for applications such as motor drives and power conversion stages where floating gate drive is necessary.
What are the key thermal considerations when using the IR2113PBF in continuous switching applications, especially with peak output currents of ±2A and an operating junction temperature up to 150°C?
The IR2113PBF’s peak source and sink current capability of 2A per channel enables fast switching transitions—typically 25ns rise time and 17ns fall time—but this also increases dynamic power dissipation due to shoot-through currents during dead times. While the device can operate continuously at junction temperatures up to 150°C, sustained switching at high frequencies generates significant heat, particularly in through-hole DIP packaging with limited surface area for conduction. Engineers should account for power losses from gate charge energy per cycle and ensure adequate heatsinking or airflow. Thermal derating may be required if switching frequency exceeds 500 kHz in compact layouts, despite the robust TJ rating.
Can the IR2113PBF reliably drive IGBTs directly, or is additional gate drive circuitry typically required given its output current and voltage specifications?
Yes, the IR2113PBF can directly drive both N-channel MOSFETs and IGBTs due to its 600V high-side capability and 2A peak output current. However, IGBTs often exhibit higher gate capacitance and require precise voltage levels to avoid saturation issues. The driver provides non-inverting inputs and isolated high/low-side channels, allowing symmetric turn-on/turn-off behavior. Still, designers must verify that the gate-source voltage reaches sufficient levels (typically 15–18V for most IGBTs) to minimize conduction losses. In practice, the IR2113PBF is frequently used in industrial inverters and uninterruptible power supplies where IGBTs demand clean, fast switching without overshoot—conditions the device supports well within its specified rise/fall times.
What distinguishes the IR2113PBF from the IR2110 in terms of input logic thresholds and how might that affect system-level noise margin in microcontroller-driven applications?
Unlike the IR2110, which has fixed logic thresholds optimized for 5V systems, the IR2113PBF specifies VIL = 6V and VIH = 9.5V, offering greater tolerance to supply variations and improved noise margins in systems powered by batteries or unstable rails. This makes the IR2113PBF more suitable for automotive or battery-powered environments where supply droop could otherwise cause unintended triggering. For example, in a 12V automotive application, the IR2113PBF maintains valid logic recognition down to ~6V, whereas a 5V-only driver like the IR2110 would fail under similar conditions. This difference allows the IR2113PBF to interface safely with legacy microcontrollers without external pull-ups or buffers, enhancing robustness in real-world deployments.
Is it safe to use the IR2113PBF without an external bootstrap diode, and what risks arise from relying solely on integrated protection features?
No, the IR2113PBF requires an external bootstrap diode to properly charge the capacitor that supplies gate drive energy to the high-side MOSFET or IGBT. While the IC includes undervoltage lockout (UVLO) and interlock delay to prevent shoot-through, it lacks internal rectification for bootstrap operation. Using an unsuitable diode—such as one with excessive reverse recovery time—can degrade efficiency or introduce ringing. Additionally, without proper decoupling near the VCC and COM pins, supply transients may trigger false shutdowns. Therefore, even though the IR2113PBF is designed for reliability, omitting external components undermines its intended functionality and compromises system safety in high-frequency switching scenarios.
How does the IR2113PBF handle shoot-through conditions in half-bridge configurations compared to single-ended drivers?
The IR2113PBF incorporates built-in dead-time control via its non-overlapping timing architecture, which inserts a small delay between turning off the high-side device and turning on the low-side (and vice versa), effectively preventing shoot-through. This is essential in half-bridge topologies where both switches share a common load node. Single-ended drivers lack this feature and require external circuitry for dead-time insertion. The IR2113PBF’s internal logic ensures minimal but sufficient separation, reducing reliance on software delays in microcontroller-based designs. However, optimal performance still depends on matching dead times to parasitic inductance and gate characteristics—especially at high switching frequencies above 100 kHz.
What layout considerations are critical when deploying the IR2113PBF in a PCB to maintain signal integrity and minimize EMI?
Due to its fast switching edges—rise time of 25ns—the IR2113PBF demands careful PCB layout to suppress electromagnetic interference and voltage spikes. High-current loops formed by gate drive paths and bootstrap capacitors should be minimized using wide traces and short routing. The bootstrap capacitor must be placed as close as possible to the VS and VB pins, with a low-ESR ceramic type rated for at least 100V. Ground planes should remain unbroken beneath the IC to reduce ground bounce, and separate analog and power grounds are recommended to avoid coupling noise into sensitive input signals. These practices help preserve the device’s nominal performance and prevent erratic behavior in densely populated boards.
Why might someone choose the IR2113PBF over a fully integrated motor controller IC despite needing discrete MOSFETs or IGBTs?
The IR2113PBF offers flexibility in selecting power transistors tailored to specific voltage, current, and speed requirements, which is not possible with monolithic motor controllers that fix transistor characteristics. This enables optimization for efficiency, thermal performance, or cost in custom designs. For instance, in a variable-frequency AC drive, choosing the right MOSFET package or IGBT module can significantly impact conduction losses. The IR2113PBF decouples driver intelligence from power stage implementation, allowing reuse across multiple platforms while maintaining consistent gate drive behavior. Additionally, its 14-DIP packaging simplifies prototyping and retrofitting into existing through-hole designs, offering advantages over surface-mount alternatives in legacy systems.
How does the IR2113PBF’s Moisture Sensitivity Level (MSL) of 1 influence storage and handling procedures during manufacturing?
With an MSL rating of 1, the IR2113PBF is considered moisture-insensitive and can be stored indefinitely under normal ambient conditions without baking prior to reflow soldering. This simplifies inventory management and reduces manufacturing overhead compared to higher MSL parts requiring controlled dry storage or nitrogen reflow. However, once exposed to ambient humidity during board assembly, standard IPC guidelines still apply regarding time-to-reflow limits. Nevertheless, the MSL 1 classification reflects Infineon’s confidence in the device’s packaging integrity, enabling reliable use in both automated production lines and manual prototyping workflows without special precautions.
In what scenarios would the IR2113PBF’s independent channel configuration provide a benefit over a shared-channel gate driver?
The IR2113PBF’s dual independent channels allow asymmetric dead times or pulse-width modulation strategies between high-side and low-side switches, which is valuable in bidirectional power converters or push-pull topologies where phase relationships matter. Shared-channel drivers synchronize outputs rigidly, limiting adaptability. For example, in a full-bridge inverter feeding a transformer, one leg may require longer dead time due to parasitic capacitance differences, achievable only with independent control. The IR2113PBF supports such fine-tuned operation without additional logic, providing architectural flexibility that enhances efficiency and reduces ringing in resonant applications.
Does the IR2113PBF support synchronous rectification, and what design changes are needed to implement it effectively?
Yes, the IR2113PBF can enable synchronous rectification by driving both the primary and secondary side switches in complementary phases. However, unlike dedicated synchronous buck controllers, the IR2113PBF requires manual dead-time programming and lacks built-in compensation networks. Implementing it necessitates careful selection of external timing resistors and possibly an MCU for feedback regulation. The device itself delivers the necessary gate drive strength and isolation, but the overall converter topology must be designed around its limitations—such as absence of soft-start or current sensing integration. Thus, while feasible, synchronous rectification with the IR2113PBF demands more external circuitry than purpose-built solutions.
Can the IR2113PBF operate reliably in harsh environments such as industrial machinery with frequent voltage transients?
Yes, the IR2113PBF is rated for industrial-grade operation from -40°C to +150°C junction temperature, making it suitable for extreme thermal conditions. Its 600V high-side capability also protects against transient overvoltages common in motor-driven equipment. However, reliability depends on proper snubber circuits and input filtering to clamp inductive kickback. Without adequate protection diodes across inductive loads, repeated transients can stress the bootstrap FET or degrade long-term gate oxide integrity. In practice, pairing the IR2113PBF with RC snubbers and TVS diodes yields robust performance in factory automation and HVAC systems where electrical noise is prevalent.
How does the IR2113PBF’s RoHS compliance and REACH status impact global market deployment?
The IR2113PBF is fully RoHS3 compliant and unaffected by REACH regulations, ensuring it meets environmental standards in Europe, North America, and Asia. This eliminates restrictions on lead, mercury, and other hazardous substances, facilitating export and certification processes for consumer electronics and medical devices. Manufacturers can confidently integrate the part into products targeting multiple regions without reformulation or testing delays. Furthermore, RoHS3 compliance aligns with newer regulations expanding beyond lead to include additional substances, future-proofing designs against evolving legislation.
What role does the base product number IR2113 play in selecting compatible evaluation boards or reference designs?
The base product number IR2113 refers to the entire family of variants, including the IR2113PBF (DIP-14), IR2113SPBF (SOIC-14), and others differing in packaging and thermal characteristics. When sourcing reference layouts or test fixtures, verifying the exact suffix ensures component compatibility. For example, a DIP-based prototype may not fit an SOIC evaluation board without adapter hardware. Designers often rely on the base number to find general application notes, but always cross-check pinouts and thermal pads. This distinction is crucial when scaling from breadboard to production, as mismatched packages introduce layout errors.
How does the IR2113PBF’s tube packaging affect supply chain logistics and prototyping workflows?
The IR2113PBF comes in tube packaging, ideal for low-volume prototyping and educational use where vacuum-sealed trays aren’t necessary. Tubes protect leads from damage during shipping and simplify manual handling in lab settings. However, they are less efficient for high-speed automated assembly compared to tray or reel formats. Distributors often bundle tubes with bulk orders to offset costs, making them accessible for hobbyists and startups. Engineers should inspect each component visually before soldering, as tube-stored parts are generally stable due to MSL 1 classification, minimizing risk of oxidation or contamination.
Are there any known limitations in using the IR2113PBF with SiC MOSFETs despite its high-voltage capability?
While the IR2113PBF can physically drive SiC MOSFETs due to its 2A output and 600V rating, its slew rates may not fully exploit SiC’s ultra-fast switching potential. SiC devices require extremely low gate resistance (<1Ω) to minimize ringing and overshoot, which the IR2113PBF can support with external resistors. However, the driver’s internal propagation delay (~50–100ns) becomes relatively slower compared to modern GaN or SiC-optimized drivers. Thus, for high-frequency (>500 kHz) SiC applications, the IR2113PBF remains functional but suboptimal, trading peak efficiency for simplicity and cost savings in moderate-frequency designs.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IR2113PBF

Product Attribute IR2113SPBF IR2113-1PBF IR2113STRPBF IR2112SPBF
Part Number IR2113SPBF IR2113-1PBF IR2113STRPBF IR2112SPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
High Side Voltage - Max (Bootstrap) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Logic Voltage - VIL, VIH - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Peak Output (Source, Sink) - - - -
Gate Type - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Rise / Fall Time (Typ) - - - -
Input Type - - - Differential
Voltage - Supply - - - -
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Number of Drivers - - - -
Channel Type - - - -
Driven Configuration - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C

IR2113PBF Datasheet PDF

Download IR2113PBF pdf datasheets and Infineon Technologies documentation for IR2113PBF - Infineon Technologies.

Datasheets
Cylindrical Battery Holders.pdf
PCN Design/Specification
Cylindrical Battery Holders.pdf
PCN Assembly/Origin
2.73KHz.pdf
Other Related Documents
Part Number Guide.pdf
PCN Packaging
Packing Material Update 16/Sep/2016.pdf Tube Pkg Qty Std Rev 18/Aug/2016.pdf
PCN Other
Tube Pkg Qty Standardization 18/Aug/2016.pdf

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Note:
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IR2113PBF Image

IR2113PBF

Infineon Technologies
32D-IR2113PBF

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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