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HomeProductsIntegrated Circuits (ICs)PMIC - Gate DriversIR2113STR
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IR2113STR - Infineon Technologies

Manufacturer Part Number
IR2113STR
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IR2113STR
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
14,510 pcs available, New & Original
Parts Description
IC GATE DRVR HALF-BRIDGE 16SOIC
Package
16-SOIC
Data sheet
IR2113STR.pdf

Other Related Documents

Part Number Guide.pdf
RoHs Status
 
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Specifications

IR2113STR Tech Specifications
Infineon Technologies - IR2113STR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IR2113STR

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Voltage - Supply 3.3V ~ 20V
Supplier Device Package 16-SOIC
Series -
Rise / Fall Time (Typ) 25ns, 17ns
Package / Case 16-SOIC (0.295', 7.50mm Width)
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Number of Drivers 2
Product Attribute Attribute Value
Mounting Type Surface Mount
Logic Voltage - VIL, VIH 6V, 9.5V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Current - Peak Output (Source, Sink) 2A, 2A
Channel Type Independent
Base Product Number IR2113

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Parts Introduction

IR2113STR Image
IR2113STR (1)

Manufacturer Part Number

IR2113STR

Manufacturer

Infineon Technologies

Introduction

The Infineon IR2113STR is a high-performance, high-voltage gate driver IC designed for driving IGBT and N-channel MOSFET power switches in a wide range of power conversion applications. It provides fast, accurate, and reliable switching of power devices, making it a versatile and reliable solution for various power electronics systems.

Product Features and Performance

Dual channel, independent gate driver

Capable of driving IGBT and N-channel MOSFET power devices

Wide supply voltage range of 3.3V to 20V

High-side voltage up to 600V

Peak output current of 2A for both source and sink

Fast rise and fall times of 25ns and 17ns, respectively

Operating temperature range of -40°C to 150°C

Product Advantages

Reliable and robust design for demanding power electronics applications

Efficient switching of power devices, leading to improved system performance

Wide range of supply voltage and output current capabilities

Compatibility with a variety of power devices

Key Reasons to Choose This Product

Proven reliability and performance in various power conversion applications

Versatile design suitable for a wide range of power electronics systems

Optimized for efficient and reliable switching of power devices

Cost-effective solution for high-performance gate driver requirements

Quality and Safety Features

Designed and manufactured to high quality standards

Robust protection features to ensure safe and reliable operation

Compatibility

The Infineon IR2113STR gate driver is compatible with a wide range of IGBT and N-channel MOSFET power devices, making it a versatile solution for various power electronics applications.

Application Areas

Motor drives

Power inverters

Switching power supplies

Industrial automation and control systems

Renewable energy systems

Uninterruptible power supplies (UPS)

Product Lifecycle

The Infineon IR2113STR is an obsolete product, meaning it is no longer in active production. However, there are alternative gate driver models available from Infineon that may provide similar or improved functionality. Customers are advised to contact our website's sales team to explore the latest available options and determine the best solution for their specific power electronics requirements.

Frequently Asked Questions(FAQ)

What is the maximum high-side voltage swing supported by the IR2113STR when driving an IGBT or N-channel MOSFET in a half-bridge configuration, and how does this impact gate drive isolation requirements?
The IR2113STR supports a maximum high-side voltage of 600V using its bootstrap capacitor architecture, which enables floating gate drive for power switches referenced to a high-voltage rail. This allows direct drive of IGBTs or N-channel MOSFETs up to 600V in half-bridge topologies such as full-bridge or push-pull converters. However, the bootstrap diode and capacitor must be carefully selected to maintain sufficient gate-source voltage during the entire conduction cycle without exceeding the IC’s supply limits.
How does the IR2113STR handle logic-level compatibility with 5V microcontroller outputs, and what are the implications for input signal conditioning?
The IR2113STR has a logic input threshold of VIL = 6V max and VIH = 9.5V min, making it incompatible with standard 3.3V or 5V CMOS logic levels. A 15V gate drive supply is required to meet these thresholds reliably. Therefore, interfacing with 5V microcontrollers necessitates a level-shifting circuit—such as a dedicated logic shifter or open-drain configuration with a pull-up resistor to 15V—to ensure valid HIGH inputs above 9.5V and LOW inputs below 6V.
Can the IR2113STR simultaneously drive two independent N-channel MOSFETs in a dual half-bridge setup without cross-conduction, and what timing parameters are critical?
Yes, the IR2113STR features two independent drivers capable of controlling separate N-channel MOSFETs in a dual half-bridge configuration. To avoid shoot-through, dead time between complementary PWM signals must be enforced externally. The rise and fall times of 25ns and 17ns respectively influence minimum achievable dead time; insufficient dead time may cause both switches to conduct momentarily, leading to high current stress and potential device failure.
How does the peak output current capability of 2A source/sink affect the choice of external gate resistors in high-frequency switching applications?
With a peak output current of 2A, the IR2113STR can charge and discharge gate capacitance quickly, reducing switching losses. However, excessive gate current increases electromagnetic interference (EMI) and ringing. Optimal gate resistance balances switching speed and EMI—typically 5Ω to 15Ω for 600V N-MOSFETs with Qg around 100–300nC. Lower resistance improves efficiency at the cost of higher dv/dt noise.
What is the significance of the 150°C junction temperature rating for the IR2113STR, and how does it constrain thermal management in compact PCB designs?
The TJ max of 150°C indicates the semiconductor die can withstand sustained operating temperatures within this limit under normal load conditions. In densely populated power stages, poor heatsinking or high ambient temperatures near 85°C may require derating of duty cycle or airflow optimization. Thermal vias under the SOIC package help dissipate heat, but layout parasitics must be minimized to prevent localized hotspots that could reduce reliability over time.
How do the non-inverting input characteristics of the IR2113STR compare to inverting drivers like the IR2103, particularly in terms of noise immunity and fault detection integration?
Unlike inverting drivers such as the IR2103, the IR2113STR uses non-inverting inputs, meaning both high-side and low-side signals are interpreted relative to a common reference. This simplifies synchronization in multi-phase systems but requires careful attention to ground bounce and noise coupling. Both architectures support UVLO and desaturation protection, though the IR2113STR includes integrated fault detection via the SD pin, enabling safer operation despite its non-inverting logic scheme.
What role does the bootstrap capacitor play in sustaining the high-side gate drive voltage in the IR2113STR, and how should it be sized for reliable operation at 400kHz switching?
The bootstrap capacitor stores charge to provide gate drive energy for the high-side MOSFET during its on-time. For 400kHz operation, it must supply enough charge to recharge fully before the next cycle. Assuming a 100nF MOSFET gate charge and 15V gate drive, a 0.47μF ceramic capacitor with low ESR is typically adequate. It must also handle voltage spikes from the bootstrap diode reverse recovery without significant droop.
Why might a designer choose the IR2113STR over a fully integrated half-bridge controller, and what trade-offs does this entail?
The IR2113STR offers flexibility by separating the driver stage from the control logic, allowing customization of external components like dead-time generation, soft-start circuits, and fault monitoring. This suits designs requiring tailored protection schemes or interfacing with legacy controllers. However, it increases bill-of-materials complexity and PCB area compared to monolithic solutions like the IRS2003, trading simplicity for configurability.
How does the IR2113STR’s supply voltage range of 3.3V to 20V influence system-level power budgeting in industrial motor drives?
Operating from 3.3V to 20V allows the IR2113STR to interface with low-voltage logic while supporting higher gate drive voltages for fast switching. In a 12V system, for example, it can still deliver robust gate drive even if the main bus voltage drops, enhancing robustness. However, lower supply voltages reduce available headroom for output swings, potentially limiting performance in noisy environments unless proper decoupling is implemented.
What precautions should be taken when substituting the IR2113STR with the IR2113STRPBF, and are there any functional differences?
The IR2113STRPBF is a Pb-free version compliant with RoHS, whereas the original IR2113STR is not. Functionally, they are identical in electrical behavior, including pinout, timing, and protection features. The primary difference lies in manufacturing process and environmental compliance, making the PBF variant preferable for new designs, though drop-in replacement is generally safe provided solder reflow profiles meet JEDEC standards.
How does the 7.5mm width of the 16-SOIC package impact routing density in high-power DC-DC converters, and what layout strategies mitigate parasitic inductance?
The wide 7.5mm body of the 16-SOIC package increases lateral space usage, complicating dense layouts. To minimize parasitic inductance in gate and bootstrap loops, short, wide traces should connect directly to the IC pins, with minimal loop area. Placement close to the power devices reduces trace length, and ground planes beneath aid in thermal dissipation and signal return path integrity.
Can the IR2113STR be used in synchronous buck converter applications, and what modifications are needed compared to half-bridge use?
Yes, the IR2113STR can drive both high-side and low-side switches in a synchronous buck configuration by connecting the HO/LO outputs to complementary MOSFETs. Unlike isolated half-bridge drivers, no center-tapped transformer is needed, simplifying design. However, external dead-time control remains essential to prevent simultaneous conduction, and the high-side reference is grounded, eliminating bootstrap challenges associated with floating drives.
What happens if the INH or INL inputs receive a voltage between 6V and 9.5V, and how does this affect fault reporting in the IR2113STR?
Inputs in the indeterminate region (6V < Vin < 9.5V) may cause unpredictable driver states, potentially leading to partial turn-on or oscillation. Since the IR2113STR lacks internal hysteresis on inputs, glitches or slow transitions in control signals could trigger erratic output behavior. This underscores the need for clean digital signals from the controller and proper pull-down circuitry to ensure defined logic levels.
How does the absence of integrated desaturation (DS) protection compare to newer gate drivers like those with built-in Miller clamp functionality?
Unlike modern drivers with integrated Miller clamps or DS monitoring, the IR2113STR relies on external circuitry for overcurrent or shoot-through protection. While effective with discrete comparator-based detection, this adds component count and design effort. Designers must implement external UVLO, current sensing, and possibly soft-fault shutdown to achieve similar safety margins, increasing system complexity.
In what scenarios would the IR2113STR’s 2A sink/source capability become a limitation, and how can this be addressed?
The 2A peak current may be insufficient for very large gate charges (>500nC) at high frequencies (>1MHz), resulting in slower turn-on/off and increased switching losses. In such cases, adding a pre-driver stage or using a lower Rds(on) MOSFET with smaller Qg mitigates the issue. Alternatively, a driver with higher current capability (e.g., >4A) should be considered for ultra-fast switching applications.
How does the MSL rating of 1 affect storage and handling of the IR2113STR in mass production environments?
An MSL rating of 1 means the IR2113STR is moisture-insensitive and can be stored indefinitely at room temperature without baking prior to assembly. This simplifies inventory logistics and reduces processing steps in high-volume manufacturing, lowering overall cost and risk of moisture-related defects during soldering.
What are the key considerations when selecting output MOSFETs matched to the IR2113STR’s rise/fall time performance?
MOSFETs with low input capacitance (Ciss) and moderate total gate charge (Qg) align well with the IR2113STR’s 25ns rise and 17ns fall times. Excessively capacitive devices will slow down switching regardless of driver strength, increasing losses. Fast-recovery diodes in synchronous rectification should also be used to complement switching speed and minimize reverse recovery interactions.
Does the IR2113STR support adaptive dead-time control, and if not, what alternative approaches exist for minimizing body diode conduction?
The IR2113STR does not include adaptive dead-time control. Instead, fixed dead time must be programmed via external RC networks or generated in firmware. To minimize body diode conduction, dead time should be just sufficient to prevent overlap—typically 100–300ns depending on MOSFET transition times—while avoiding unnecessarily long delays that increase conduction losses. Real-time measurement of switch node ringing can help fine-tune this value empirically.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IR2113STR

Product Attribute IR2113STRPBF IR2114SSTRPBF IR21141SSTRPBF IR2113SPBF
Part Number IR2113STRPBF IR2114SSTRPBF IR21141SSTRPBF IR2113SPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Mounting Type - Surface Mount Through Hole Surface Mount
Driven Configuration - - - -
Current - Peak Output (Source, Sink) - - - -
Gate Type - - - -
Voltage - Supply - - - -
Series - - - -
Input Type - - - Differential
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
High Side Voltage - Max (Bootstrap) - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Rise / Fall Time (Typ) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Number of Drivers - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Logic Voltage - VIL, VIH - - - -
Channel Type - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C

IR2113STR Datasheet PDF

Download IR2113STR pdf datasheets and Infineon Technologies documentation for IR2113STR - Infineon Technologies.

Datasheets
Cylindrical Battery Holders.pdf
Other Related Documents
Part Number Guide.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

  • Embe***dMotion
    Aug 5, 2026

    Purchased this DSP controller for a motor control application. Stable processing performance and very good response under varying loads.

  • FPGA***dio
    Jul 30, 2026

    This FPGA handled our logic design without any surprises. Configuration completed quickly and timing met the project requirements.

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

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IR2113STR Image

IR2113STR

Infineon Technologies
32D-IR2113STR

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