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HomeProductsIntegrated Circuits (ICs)PMIC - Gate DriversIR21141SSPBF
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IR21141SSPBF - Infineon Technologies

Manufacturer Part Number
IR21141SSPBF
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IR21141SSPBF
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
14,550 pcs available, New & Original
Parts Description
IC GATE DRVR HALF-BRIDGE 24SSOP
Package
24-SSOP
Data sheet
IR21141SSPBF.pdf

PCN Obsolescence/ EOL

Multiple Devices 25/Apr/2014.pdf

Other Related Documents

Part Number Guide.pdf
RoHs Status
 
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Specifications

IR21141SSPBF Tech Specifications
Infineon Technologies - IR21141SSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IR21141SSPBF

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Voltage - Supply 11.5V ~ 20V
Supplier Device Package 24-SSOP
Series -
Rise / Fall Time (Typ) 24ns, 7ns
Package / Case 24-SSOP (0.209", 5.30mm Width)
Package Tube
Operating Temperature -40°C ~ 150°C (TJ)
Number of Drivers 2
Product Attribute Attribute Value
Mounting Type Surface Mount
Logic Voltage - VIL, VIH 0.8V, 2V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Gate Type IGBT
Driven Configuration Half-Bridge
Current - Peak Output (Source, Sink) 2A, 3A
Channel Type Independent
Base Product Number IR21141

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Parts Introduction

IR21141SSPBF Image
IR21141SSPBF (1)

Manufacturer Part Number

IR21141SSPBF

Manufacturer

infineon-technologies

Introduction

The IR21141SSPBF is a high-performance, dual-channel IGBT gate driver from Infineon Technologies. This device is designed to provide efficient and reliable control for IGBT-based power conversion applications, such as motor drives, inverters, and other power electronics systems.

Product Features and Performance

Dual-channel, independent gate driver

Supports IGBT gate drive with 2A source and 3A sink peak output current

Wide supply voltage range of 11.5V to 20V

Logic-level compatible inputs with 0.8V low and 2V high thresholds

Propagation delay of 24ns (rise time) and 7ns (fall time)

Supports high-side voltages up to 600V (using bootstrap capacitor)

Operates over a wide temperature range of -40°C to 150°C (junction temperature)

Surface mount 24-SSOP package

Product Advantages

Efficient and reliable IGBT gate driving

Wide supply voltage and temperature range for versatile applications

Fast switching speeds for high-frequency power conversion

Small package size for compact design

Key Reasons to Choose This Product

Optimized for IGBT-based power electronics applications

Proven reliability and performance from Infineon Technologies

Compact surface mount package for space-constrained designs

Broad operating conditions for design flexibility

Quality and Safety Features

Designed and manufactured to Infineon's high quality standards

Robust protection features to ensure safe and reliable operation

Compatibility

The IR21141SSPBF is compatible with a wide range of IGBT and power semiconductor devices. It can be used in various power conversion applications, including motor drives, inverters, and other power electronics systems.

Application Areas

Motor drives (e.g., for industrial, home appliances, and electric vehicles)

Inverters (e.g., for solar, wind, and uninterruptible power supplies)

Power conversion and control systems

Other IGBT-based power electronics applications

Product Lifecycle

The IR21141SSPBF is currently in an obsolete status. Customers are advised to contact our website's sales team for information on equivalent or alternative gate driver models that may be available.

Frequently Asked Questions(FAQ)

How does the IR21141SSPBF handle dead-time control in half-bridge configurations, and what are the design implications for minimizing shoot-through risk?
The IR21141SSPBF integrates a built-in dead-time control circuit that prevents simultaneous conduction of the high-side and low-side drivers, which is critical in half-bridge topologies. This feature reduces the risk of shoot-through currents, especially when using IGBTs with longer turn-off times. However, designers must still ensure proper gate drive timing alignment with the load current zero-crossing to optimize efficiency. For applications switching at frequencies above 20 kHz, external dead-time adjustment may be necessary to fine-tune performance, as the internal delay is fixed and not user-programmable.
What is the recommended bootstrap capacitor value and selection criteria when driving high-side IGBTs with the IR21141SSPBF?
The IR21141SSPBF requires an external bootstrap capacitor to supply gate drive voltage to the high-side MOSFET or IGBT. A typical value ranges from 0.1 µF to 1 µF, depending on the gate charge (Qg) of the device being driven and the switching frequency. For an IGBT with Qg = 50 nC switching at 100 kHz, a 0.47 µF capacitor with low ESR (e.g., ceramic or film) ensures sufficient charge replenishment. Capacitor voltage rating should exceed the high-side supply plus margin, typically ≥15 V for a 12 V system. Self-resonant frequency must be above the highest harmonic of the switching signal to avoid degradation in high-frequency operation.
Can the IR21141SSPBF be used with SiC MOSFETs, and what modifications are needed compared to IGBT gate requirements?
Yes, the IR21141SSPBF can drive SiC MOSFETs, but its non-inverting input configuration and 24 ns rise time may limit performance at very high switching speeds. SiC devices require lower gate resistance to minimize ringing and achieve faster transitions, whereas IGBTs tolerate higher gate resistances due to slower turn-on dynamics. To use the IR21141SSPBF with SiC MOSFETs, reduce gate resistance to <10 Ω and ensure logic-level compatibility—since SiC MOSFETs often operate at 6–12 V gate thresholds, the IR21141SSPBF’s VIH of 2 V is acceptable. However, for optimal dv/dt immunity, consider adding RC snubbers at the output.
What are the thermal considerations when operating the IR21141SSPBF near its maximum junction temperature of 150°C?
The IR21141SSPBF operates reliably up to TJ = 150°C, but continuous operation close to this limit requires careful thermal management. Power dissipation comes from quiescent current and gate drive losses. At VCC = 15 V and 20 kHz switching, quiescent current is ~5 mA, contributing only ~75 mW. Gate drive losses depend on switching frequency and load capacitance; for a 2 A source/sink capability driving a 50 nF total gate capacitance, dynamic power exceeds 1 W at 100 kHz. Therefore, a heatsink or thermal pad connection to a PCB ground plane is advisable for sustained high-frequency operation. Thermal impedance should keep junction temperature below 130°C under worst-case ambient conditions.
How do the peak output currents (2 A source, 3 A sink) influence gate resistor selection for fast IGBT turn-on?
The IR21141SSPBF's 2 A source and 3 A sink capability enables rapid charging and discharging of gate capacitance, reducing switching losses. For an IGBT with Cies = 1.5 nF, a 5 Ω gate resistor allows peak current of approximately 2.1 A (VCC / Rg), which aligns well with the driver’s source capability. This reduces turn-on time from 30 ns to around 20 ns, improving efficiency in hard-switching topologies. However, excessive current increases electromagnetic interference (EMI); thus, Rg must balance speed against noise. Values between 5 Ω and 15 Ω are typical, with lower resistance preferred for high-power IGBTs requiring aggressive turn-on.
Is it possible to cascade multiple IR21141SSPBF devices for multi-phase inverter applications, and what synchronization challenges arise?
Cascading IR21141SSPBFs for multi-phase designs is feasible, but phase alignment requires precise control of input signals. Since each channel operates independently, clock skew between phases must be minimized to avoid current imbalance. For three-phase inverters, use a common reference oscillator with <1 ns jitter across channels. Additionally, bootstrap circuits must be decoupled per high-side driver to prevent cross-talk. While the IR21141SSPBF lacks dedicated interlock logic for paralleling, its built-in dead time helps prevent shoot-through within each half-bridge. Careful layout and signal integrity practices are essential to maintain timing accuracy at switching frequencies above 50 kHz.
What happens to the floating supply during startup if the bootstrap diode fails open in a circuit using the IR21141SSPBF?
If the bootstrap diode fails open, the floating supply (VBS) cannot recharge during the low-side conduction phase, leading to gradual discharge of the bootstrap capacitor. When VBS drops below the minimum required voltage (typically 9 V), the high-side driver loses bias and fails to activate even if the input signal is present. In steady-state operation, this results in loss of high-side gate drive and potential desaturation of the IGBT. During startup, repeated attempts to turn on the high side will fail, causing overcurrent through the low-side device until protection circuitry intervenes. Redundant bootstrap networks or monitoring circuits may be warranted in safety-critical systems.
How does the IR21141SSPBF compare to the IR2110 in terms of propagation delay and suitability for resonant converter topologies?
The IR21141SSPBF features lower propagation delay than the IR2110, with tPLH and tPHL typically around 30 ns versus 50 ns, making it better suited for resonant converters like LLC or phase-shifted full-bridge where precise timing is crucial. Additionally, the IR21141SSPBF supports a wider supply range (11.5 V to 20 V) compared to the IR2110’s 10 V to 20 V, enabling operation with lower gate drive voltages in high-efficiency designs. However, the IR2110 has a more mature ecosystem and is widely used in legacy systems. For new resonant applications requiring sub-50 ns delays, the IR21141SSPBF offers superior timing precision and integration.
Can the IR21141SSPBF be powered directly from a 12 V automotive battery without additional regulation?
Yes, the IR21141SSPBF accepts a supply range from 11.5 V to 20 V, making it compatible with 12 V automotive systems. However, voltage transients such as load dump (up to 40 V) can exceed the absolute maximum rating of 20 V unless suppressed. A transient voltage suppressor (TVS) diode rated for 24 V clamping voltage should be placed at the VCC pin, along with a ferrite bead and bypass capacitor (≥10 µF bulk + 0.1 µF ceramic). Even then, sustained operation near 12 V may reduce margin for noise and aging effects. For long-term reliability, a regulated 15 V supply derived via LDO from the battery is recommended.
What are the key differences between the IR21141SSPBF and the IR2113 when driving N-channel MOSFETs in synchronous buck converters?
The IR21141SSPBF drives both high-side and low-side devices in a half-bridge, while the IR2113 is a single-channel high-side driver optimized for synchronous buck applications. Compared to the IR2113, the IR21141SSPBF offers dual independent channels with shared logic inputs, reducing component count in half-bridge topologies. The IR21141SSPBF also includes built-in dead time, which the IR2113 lacks and must be externally managed. Additionally, the IR21141SSPBF has higher sink current (3 A vs. 2 A), beneficial for fast low-side turn-on. However, the IR2113 provides better noise immunity and simpler layout due to single-supply operation and no floating stage requirements.
How does the non-inverting input type affect noise sensitivity in the IR21141SSPBF compared to inverting configurations?
The IR21141SSPBF uses a non-inverting input, meaning the high-side enable signal is active when IN+ > VIH (2 V), which matches standard TTL/CMOS levels and simplifies microcontroller interfacing. This configuration makes it less prone to false triggering from negative noise spikes but more susceptible to positive glitches on the enable line. In contrast, inverting inputs require complementary signals and are less intuitive for PWM generators. For robust operation, the input should be filtered with a small RC network (e.g., 1 kΩ + 100 pF) to suppress ringing above 1 MHz. Despite this, the non-inverting design improves compatibility with modern digital controllers and reduces component count in gate drive circuits.
What precautions are necessary to prevent latch-up in the IR21141SSPBF during voltage dips or brownout conditions?
Latch-up risk increases when VCC drops below 11.5 V due to reduced noise margins and potential substrate injection from inductive loads. To mitigate this, ensure VCC remains above the minimum operating voltage using bulk capacitance (≥47 µF electrolytic) and fast-response decoupling (0.1 µF ceramic placed within 5 mm of the IC). Also, avoid floating nodes during power-up sequences by pre-charging bootstrap capacitors or using soft-start circuits. The IR21141SSPBF includes undervoltage lockout (UVLO), but hysteresis is limited; adding external UVLO with hysteresis (e.g., TL431-based) enhances robustness. Never allow the floating supply to fall below 8 V to prevent damage to the high-side driver stage.
Can the IR21141SSPBF be used in isolated gate drive applications, and how should isolation be implemented?
The IR21141SSPBF is not inherently isolated, so external isolation methods must be employed for galvanic separation between control and power stages. Optocouplers or digital isolators (e.g., Silicon Labs Si823x) can transmit PWM signals across the isolation barrier, feeding into the logic inputs of the IR21141SSPBF on the secondary side. Bootstrap supplies remain unisolated and must be referenced to the local ground of each half-bridge. Alternatively, isolated DC-DC converters can power the floating VBS rail. Layout must maintain creepage distances >8 mm between primary and secondary sides. While feasible, this adds complexity compared to integrated isolated drivers like Infineon’s 6EDL04I120.
What impact does package parasitics have on high-frequency performance when using the IR21141SSPBF in 24-SSOP packaging?
The 24-SSOP package introduces significant parasitic inductance and capacitance, limiting high-frequency performance. With lead inductance of ~10 nH and bond wire contributions, turn-off spikes can reach 1.5× VDS max even with snubbers. At switching frequencies above 50 kHz, these parasitics increase EMI and reduce effective gate drive speed. To minimize impact, use surface-mount pads with short traces, connect VCC and COM planes directly to bulk capacitors, and avoid routing high-current paths near sensitive analog lines. Placement symmetry and ground stitching improve return path integrity. For frequencies exceeding 200 kHz, consider upgrading to a QFN or D²PAK-based driver with lower ESL.
How does the Moisture Sensitivity Level (MSL 3) classification affect storage and reflow soldering procedures for the IR21141SSPBF?
MSL 3 indicates that the IR21141SSPBF can withstand up to 168 hours of exposure to ambient moisture before requiring baking. After opening the moisture-barrier bag, components must either be assembled within 168 hours or baked at 125°C for 24 hours to remove absorbed moisture. During reflow, the peak temperature must not exceed 260°C for more than 30 seconds to prevent delamination of internal layers. Following IPC-J-STD-033 guidelines ensures reliability. Failure to comply may result in popcorning during reflow, leading to cracked packages or solder joint failure. Always verify floor life status using humidity indicator cards in the package.
What are the advantages of using the IR21141SSPBF over discrete gate driver solutions in industrial motor drive applications?
The IR21141SSPBF integrates dead-time control, level shifting, and dual-channel architecture into a single compact IC, reducing board space and BOM count compared to discrete implementations. Discrete solutions require multiple transistors, resistors, and diodes, increasing susceptibility to layout-induced timing errors. The IR21141SSPBF’s monolithic design ensures matched propagation delays across channels, critical for balanced current sharing in three-phase motors. Additionally, its ±3 A sink capability simplifies driving low-side IGBTs with minimal external buffering. While discrete designs offer flexibility, the IR21141SSPBF lowers development time and improves consistency in high-volume production environments.
Can the IR21141SSPBF drive P-channel high-side MOSFETs, and if not, why?
No, the IR21141SSPBF cannot directly drive P-channel high-side MOSFETs because it generates a floating high-side output referenced to the source of the high-side device. For P-channel MOSFETs, the gate must be pulled below source potential to turn on, but the driver’s output is referenced above source, making it incompatible. Instead, N-channel MOSFETs must be used on the high side, or an alternative driver topology such as a totem-pole or transformer-isolated gate drive should be employed. Using P-channels would require additional circuitry to invert the gate signal, increasing complexity and cost.
How does the IR21141SSPBF perform in fault scenarios involving short-circuit conditions on the load side?
Under a direct short across the half-bridge output, the IR21141SSPBF will attempt to drive both high-side and low-side devices simultaneously due to delayed dead-time response or noise on inputs. This leads to shoot-through current, potentially exceeding 100 A in milliseconds, which stresses the IGBTs and driver. The device itself does not include overcurrent protection; thus, external sensing (e.g., shunt resistor + comparator) or fast-acting fuses are required. Once triggered, the system must disable the driver before junction temperatures exceed safe limits. Some designs integrate DESAT detection, but the IR21141SSPBF lacks this feature, necessitating additional protection circuitry for robust fault handling.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IR21141SSPBF

Product Attribute IR21141SSTRPBF IR2114SSPBF IR2114SSTRPBF IR2113STRPBF
Part Number IR21141SSTRPBF IR2114SSPBF IR2114SSTRPBF IR2113STRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
High Side Voltage - Max (Bootstrap) - - - -
Current - Peak Output (Source, Sink) - - - -
Rise / Fall Time (Typ) - - - -
Voltage - Supply - - - -
Input Type - - - Differential
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Number of Drivers - - - -
Logic Voltage - VIL, VIH - - - -
Channel Type - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Series - - - -
Gate Type - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Driven Configuration - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Base Product Number - DAC34H84 MAX500 ADS62P42
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad

IR21141SSPBF Datasheet PDF

Download IR21141SSPBF pdf datasheets and Infineon Technologies documentation for IR21141SSPBF - Infineon Technologies.

Datasheets
IR(21,22)141SSPBF.pdf IR2114SSPbF/IR2214SSPbF.pdf
PCN Packaging
Barcode Label Update 24/Feb/2017.pdf Packing Material Update 16/Sep/2016.pdf
PCN Obsolescence/ EOL
Multiple Devices 25/Apr/2014.pdf
Other Related Documents
Part Number Guide.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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IR21141SSPBF Image

IR21141SSPBF

Infineon Technologies
32D-IR21141SSPBF

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