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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIRF9Z24NPBF
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IRF9Z24NPBF - Infineon Technologies

Manufacturer Part Number
IRF9Z24NPBF
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IRF9Z24NPBF
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
118,250 pcs available, New & Original
Parts Description
MOSFET P-CH 55V 12A TO220AB
Package
TO-220AB
Data sheet
IRF9Z24NPBF.pdf

Other Related Documents

IR Part Numbering System.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 118250
  • Unit Price: $0.215
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
5+ $0.215 $1.08
50+ $0.152 $7.60
150+ $0.135 $20.25
500+ $0.115 $57.50
2000+ $0.105 $210.00
5000+ $0.10 $500.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IRF9Z24NPBF Tech Specifications
Infineon Technologies - IRF9Z24NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IRF9Z24NPBF

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 175mOhm @ 7.2A, 10V
Power Dissipation (Max) 45W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Base Product Number IRF9Z24

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

IRF9Z24NPBF Image
IRF9Z24NPBF (1)

Manufacturer Part Number

IRF9Z24NPBF

Manufacturer

Infineon Technologies

Introduction

The IRF9Z24NPBF is a P-channel power MOSFET from Infineon Technologies, a leading manufacturer of semiconductor solutions.

Product Features and Performance

55V drain-to-source voltage

±20V gate-to-source voltage

175mOhm maximum on-resistance at 7.2A, 10V

12A continuous drain current at 25°C case temperature

350pF maximum input capacitance at 25V

45W maximum power dissipation at 25°C case temperature

Operating temperature range of -55°C to 175°C

Product Advantages

Low on-resistance for efficient power switching

High voltage and current handling capabilities

Suitable for a wide range of power electronics applications

Reliable performance over a wide temperature range

IRF9Z24NPBF Image
IRF9Z24NPBF (2)

Key Technical Parameters

P-channel MOSFET technology

4V maximum gate-to-source threshold voltage at 250A

10V maximum drive voltage for minimum on-resistance

19nC maximum gate charge at 10V

Quality and Safety Features

ROHS3 compliant

TO-220AB package for through-hole mounting

Reliable performance in various operating conditions

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Industrial automation and control

Automotive electronics

Product Lifecycle

The IRF9Z24NPBF is an active product, and there are no plans for discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high voltage and current handling

Reliable operation over a wide temperature range

Suitable for a variety of power electronics applications

Proven quality and safety features from a reputable manufacturer

Frequently Asked Questions(FAQ)

What are the key thermal and electrical trade-offs when using the IRF9Z24NPBF in a high-current switching application near its 12A continuous drain current rating?
The IRF9Z24NPBF is rated for 12A continuous drain current at 25°C case temperature, but this value derates significantly with rising temperature due to thermal resistance (RθJC ≈ 2.78°C/W). At elevated ambient temperatures, exceeding 8–9A without substantial heatsinking may push junction temperatures beyond safe limits, especially given its 45W maximum power dissipation. Additionally, Rds(on) increases with temperature—rising from 175mΩ at 25°C to over 250mΩ at 150°C—which further elevates conduction losses. Designers must balance current density, thermal management, and efficiency, particularly in compact layouts where airflow is limited.
How does the gate charge (Qg) of the IRF9Z24NPBF compare to similar P-channel MOSFETs in the 50–60V range, and what impact does this have on driver selection?
With a maximum gate charge of 19 nC at 10V Vgs, the IRF9Z24NPBF sits in the mid-to-low range among comparable P-channel HEXFET® devices. For example, it requires roughly 30% less gate drive energy than the IRF9Z34N (Qg ≈ 28 nC), enabling the use of lower-current gate drivers or microcontroller GPIOs with modest buffering. However, its 350 pF input capacitance still demands attention to gate trace inductance and rise/fall times—especially in PWM applications above 50 kHz—to avoid excessive switching losses or shoot-through in half-bridge configurations.
Can the IRF9Z24NPBF be safely operated with a 5V logic-level gate drive, and what performance penalties should be expected?
The IRF9Z24NPBF is not optimized for 5V logic drive; its Rds(on) specification of 175mΩ is measured at 10V Vgs, and performance degrades significantly at lower gate voltages. At Vgs = 5V, Rds(on) can increase by 40–60%, exceeding 250mΩ under load, which raises conduction losses and thermal stress. While it may function in non-critical low-frequency applications, reliable saturation and efficiency require a 10V drive. For 5V systems, a dedicated logic-level P-MOSFET or level-shifting circuitry is preferable.
What layout considerations are critical when mounting the IRF9Z24NPBF in a TO-220AB package to minimize parasitic inductance and ensure thermal reliability?
The TO-220AB package of the IRF9Z24NPBF benefits from short, wide traces on the drain and source pins to reduce parasitic inductance—particularly important during fast turn-off transients where voltage spikes can approach the 55V Vdss limit. The tab is electrically connected to the drain, so insulating hardware (e.g., mica washers and shoulder bushings) is required when mounting to a grounded heatsink. Thermal interface material should be applied evenly, and mounting torque kept within 6–10 in-lbs to prevent case cracking while ensuring optimal thermal contact. Poor layout can induce ringing, increase EMI, and reduce effective power handling.
How does the IRF9Z24NPBF perform in synchronous rectification applications compared to newer-generation trench P-MOSFETs?
In synchronous rectification, the IRF9Z24NPBF’s relatively high Rds(on) (175mΩ) and moderate gate charge (19 nC) result in higher conduction and switching losses than modern trench-based P-channel devices like the Infineon BSC059N04LS6 (Rds(on) ≈ 5.9mΩ). While the IRF9Z24NPBF remains viable for low-to-mid frequency (<100 kHz) applications with moderate current demands, its planar HEXFET® structure lacks the cell density and lower capacitance of trench technologies. For high-efficiency DC-DC converters, newer alternatives offer better figure-of-merit (Rds(on) × Qg), though the IRF9Z24NPBF provides robustness and ease of drive in cost-sensitive designs.
What is the significance of the 4V maximum Vgs(th) specification for the IRF9Z24NPBF in fault protection and startup scenarios?
The threshold voltage (Vgs(th)) of the IRF9Z24NPBF ranges up to 4V at 250µA, meaning the device may begin conducting at gate-source voltages as low as 2–3V. This has implications for undervoltage lockout (UVLO) design and fault conditions: if the gate driver fails to fully pull the gate to ground during shutdown, leakage current through a weakly turned-on MOSFET can cause unintended conduction or thermal runaway. In noisy environments, this also increases susceptibility to false turn-on from coupled transients, necessitating strong pull-down resistors (≤10kΩ) and clean gate drive waveforms.
Is the IRF9Z24NPBF suitable for linear-mode operation, such as in low-dropout regulators or current-limiting circuits?
While technically capable of linear operation, the IRF9Z24NPBF is not ideal for sustained linear-mode use due to its relatively high Rds(on) and limited safe operating area (SOA) at low Vds. In linear applications, even modest voltages across the device (e.g., 5V at 5A) result in 25W of dissipation, requiring extensive heatsinking and careful SOA margining. Thermal runaway risk increases because Rds(on) has a positive temperature coefficient, but localized heating can create hot spots before global feedback stabilizes. Dedicated linear MOSFETs or alternative topologies (e.g., op-amp-driven pass elements) are typically more reliable.
How does the IRF9Z24NPBF’s performance degrade at elevated junction temperatures, and what design margins are recommended for industrial environments?
The IRF9Z24NPBF’s Rds(on) increases by approximately 1.5% per °C above 25°C, meaning at 125°C junction temperature, resistance can exceed 260mΩ—raising conduction losses by over 50% compared to room temperature. Additionally, threshold voltage decreases slightly with temperature, increasing susceptibility to unintended turn-on. For industrial applications operating up to 85°C ambient, designers should derate continuous current to 6–8A and ensure junction temperatures remain below 150°C under worst-case conditions. A thermal margin of at least 20°C below Tj(max) = 175°C is advisable to account for transient spikes and long-term reliability.
What are the implications of the IRF9Z24NPBF’s ±20V maximum Vgs rating for gate protection in high-noise or inductive switching environments?
The ±20V gate-source voltage limit of the IRF9Z24NPBF requires careful protection in applications involving long gate leads or inductive loads, where voltage spikes can exceed this threshold during fast transitions. While the device tolerates brief excursions, sustained overvoltage can degrade the oxide layer. A Zener diode (e.g., 12–15V) clamped between gate and source, combined with a small series gate resistor (10–100Ω), effectively limits peak Vgs and suppresses ringing. This is especially important in motor drive or relay-switching circuits where back-EMF or ground bounce may couple into the gate node.
Can the IRF9Z24NPBF be paralleled to increase current handling, and what matching criteria are necessary to ensure current sharing?
Paralleling the IRF9Z24NPBF is possible but requires tight parameter matching, particularly Rds(on) and Vgs(th), to avoid thermal imbalance. Due to its positive temperature coefficient of Rds(on), the device exhibits some natural current-sharing stability, but initial mismatch can cause one unit to carry disproportionate current, leading to localized heating and runaway. Source ballast resistors (0.1–0.5Ω) or individual gate resistors help equalize dynamic sharing. Additionally, symmetrical layout, shared heatsinking, and binning devices from the same production lot improve reliability. For high-current designs, a single higher-rated MOSFET is often more efficient and easier to manage.
How does the IRF9Z24NPBF compare to the IRF9540N in terms of switching speed and conduction loss for a 48V battery management system?
The IRF9Z24NPBF offers faster switching than the IRF9540N due to its lower gate charge (19 nC vs. 63 nC) and reduced input capacitance (350 pF vs. 1400 pF), resulting in lower switching losses at frequencies above 20 kHz. However, its Rds(on) of 175mΩ is significantly higher than the IRF9540N’s 117mΩ at 10V, leading to greater conduction losses at high continuous currents. In a 48V BMS with moderate switching frequency (<50 kHz) and high current, the IRF9540N may offer better overall efficiency, while the IRF9Z24NPBF excels in higher-frequency, lower-current applications where gate drive simplicity and speed are prioritized.
What derating guidelines apply to the IRF9Z24NPBF’s power dissipation when operating in enclosed or poorly ventilated enclosures?
The IRF9Z24NPBF’s 45W power dissipation rating assumes a 25°C case temperature with an ideal heatsink. In enclosed environments with limited airflow, thermal resistance from junction to ambient (RθJA) can exceed 60°C/W without forced cooling, limiting practical dissipation to under 10W at 50°C ambient. A conservative derating curve suggests reducing maximum power by 0.5W per °C above 25°C ambient. For example, at 70°C ambient, continuous dissipation should not exceed 15W without active cooling. Monitoring case temperature and using thermal shutdown circuits enhances long-term reliability in such conditions.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IRF9Z24NPBF

Product Attribute IRF9Z24NSTRLPBF IRF9Z24NSPBF IRF9Z24NLPBF IRF9Z24PBF-BE3
Part Number IRF9Z24NSTRLPBF IRF9Z24NSPBF IRF9Z24NLPBF IRF9Z24PBF-BE3
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Drain to Source Voltage (Vdss) - - - -
Rds On (Max) @ Id, Vgs - - - -
Power Dissipation (Max) - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Input Capacitance (Ciss) (Max) @ Vds - - - -
FET Feature - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On) - - - -
Vgs(th) (Max) @ Id - - - -
Vgs (Max) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
FET Type - - - -
Series - - - -
Technology - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Gate Charge (Qg) (Max) @ Vgs - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad

IRF9Z24NPBF Datasheet PDF

Download IRF9Z24NPBF pdf datasheets and Infineon Technologies documentation for IRF9Z24NPBF - Infineon Technologies.

Other Related Documents
IR Part Numbering System.pdf
PCN Design/Specification
Mult Dev Label Chgs Aug/2020.pdf Mult Dev No Format/Barcode Label 15/Jan/2019.pdf
PCN Assembly/Origin
Mult Dev Wafer Site Chg 18/Dec/2020.pdf
PCN Packaging
Tube Label Chgs 20/May/2020.pdf Tube Pkg Qty Std Rev 18/Aug/2016.pdf
PCN Other
Tube Pkg Qty Standardization 18/Aug/2016.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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IRF9Z24NPBF Image

IRF9Z24NPBF

Infineon Technologies
32D-IRF9Z24NPBF

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