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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleIRG4PH40UDPBF
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IRG4PH40UDPBF - International Rectifier

Manufacturer Part Number
IRG4PH40UDPBF
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IRG4PH40UDPBF
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,090 pcs available, New & Original
Parts Description
IRG4PH40U - 1200V ULTRAFAST 5-40
Package
TO-247AC
Data sheet
-
RoHs Status
 
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In stock: 5090

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Specifications

IRG4PH40UDPBF Tech Specifications
International Rectifier - IRG4PH40UDPBF technical specifications, attributes, parameters and parts with similar specifications to International Rectifier - IRG4PH40UDPBF

Product Attribute Attribute Value
Manufacturer Infineon Technologies
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Test Condition 800V, 21A, 10Ohm, 15V
Td (on/off) @ 25°C 46ns/97ns
Switching Energy 1.8mJ (on), 1.93mJ (off)
Supplier Device Package TO-247AC
Series -
Reverse Recovery Time (trr) 63 ns
Power - Max 160 W
Product Attribute Attribute Value
Package / Case TO-247-3
Package Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type -
Gate Charge 86 nC
Current - Collector Pulsed (Icm) 82 A
Current - Collector (Ic) (Max) 41 A

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status Not applicable
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key switching performance characteristics of the IRG4PH40UDPBF IGBT for high-frequency inverter applications?
The IRG4PH40UDPBF exhibits a turn-on delay time of 46ns and turn-off delay of 97ns under test conditions of 800V, 21A, with a 10Ω gate resistor and 15V drive voltage. These parameters indicate relatively fast switching behavior suitable for moderate to high-frequency operation. The total switching energy—1.8mJ during turn-on and 1.93mJ during turn-off—contributes to conduction and switching losses that must be balanced against thermal management capabilities in continuous operation. This level of switching loss is typical for 1200V-class IGBTs used in industrial motor drives or solar inverters where efficiency and reliability are critical.
How does the gate charge of the IRG4PH40UDPBF compare to similar devices like the STGW25H120DF2 when driving with limited gate driver output current?
With a total gate charge (Qg) of 86 nC, the IRG4PH40UDPBF requires more drive effort than lower-power IGBTs such as the STGW25H120DF2, which typically has a Qg below 50 nC. When driven by a gate driver with limited peak current capability—say 2A—the rise and fall times will increase due to slower charging and discharging of the gate capacitance. For systems constrained by low-side gate driver supply voltage or high-side bootstrap limitations, this higher gate charge may necessitate external gate resistors or stronger drivers to maintain acceptable switching speed and minimize EMI and shoot-through risk.
Is the IRG4PH40UDPBF suitable for hard-switching topologies like three-phase inverters without additional snubber circuits?
While the IRG4PH40UDPBF can operate in hard-switching configurations common in three-phase inverters, its switching energy values (1.8mJ on, 1.93mJ off) suggest noticeable power dissipation during transitions. In continuous high-load scenarios, these losses accumulate and may push junction temperatures beyond safe limits unless adequate heatsinking and airflow are provided. Snubber networks are not strictly required but can reduce voltage stress during turn-off and improve EMI performance, especially at elevated switching frequencies above 20 kHz.
Can the IRG4PH40UDPBF be safely operated near its maximum collector current if thermal resistance is properly managed?
Yes, but only within defined constraints. The device supports a continuous collector current of 41 A and pulsed peaks up to 82 A, yet sustained operation near 41 A demands careful attention to case-to-ambient thermal impedance. Assuming a typical TO-247AC mounting with TIM and heatsink, achieving stable operation requires keeping junction temperature below 125°C under worst-case ambient conditions. Power dissipation scales with Vce(on), which rises significantly at elevated temperatures, creating a feedback loop that must be modeled using the SOA curve from the datasheet to avoid secondary breakdown.
What input type configuration should be used with the IRG4PH40UDPBF to ensure reliable turn-on and turn-off?
The IRG4PH40UDPBF features a standard input type, meaning it responds directly to voltage levels applied to the gate-emitter terminal. To achieve optimal Vce(on) of 3.1V @ 15V, gate drive voltages should exceed ±15V for full enhancement. Using lower gate voltages increases conduction losses over time. Additionally, negative bias during turn-off improves noise immunity and reduces tail current duration, extending device life in high-reliability applications such as industrial automation or renewable energy systems.
How does the reverse recovery time (trr) of the IRG4PH40UDPBF influence diode-free operation in freewheeling modes?
With a specified trr of 63 ns, the integrated body diode of the IRG4PH40UDPBF exhibits moderate reverse recovery behavior. While not ideal for zero-voltage switching (ZVS) environments, this characteristic allows use in hard-switched bridge legs without external diodes if the application tolerates associated voltage spikes and switching losses. However, in synchronous rectification or active-clamp circuits, the slow recovery can generate significant ringing and electromagnetic interference, potentially requiring clamping components or layout optimization to meet EMC standards.
Are there any known substitution risks when replacing the IRG4PH40UDPBF with STGWA40H120DF2 in existing PCB footprints?
Both the IRG4PH40UDPBF and STGWA40H120DF2 share identical pinout and TO-247AC package dimensions, facilitating mechanical replacement. However, differences in internal structure may lead to variations in Vce(sat), gate charge, and switching timing. Without recalculating gate drive requirements and verifying thermal performance under actual load profiles, direct substitution could result in suboptimal efficiency or premature failure due to mismatched dynamic behavior. Design verification through bench testing is recommended before production deployment.
Why might the IRG4PH40UDPBF exhibit higher conduction losses compared to MOSFETs in certain low-voltage applications?
Although the IRG4PH40UDPBF offers robust blocking voltage and current handling, its conduction mechanism relies on minority carrier injection, resulting in higher on-state resistance than unipolar MOSFETs of similar die size. In applications below 600V, where MOSFETs have achieved lower Rds(on) per ampere, the IGBT’s Vce(on) of 3.1V at 21A equates to approximately 73 mΩ—higher than most 100A+ Si MOSFETs. Thus, in low-voltage, high-current DC-DC converters or battery chargers, MOSFET alternatives often deliver superior efficiency despite lower ruggedness.
What precautions are necessary when operating the IRG4PH40UDPBF close to its maximum junction temperature?
Continuous operation near 150°C TJ demands rigorous derating. Even minor increases in ambient temperature or poor thermal interface conductivity can cause thermal runaway due to the positive temperature coefficient of Vce(on). Thermal cycling between -55°C and 150°C also induces mechanical stress on bond wires and silicon die. To ensure long-term reliability, designers should implement overtemperature protection, monitor case temperature via thermistor, and validate lifetime under expected duty cycles using accelerated aging models based on Arrhenius acceleration factors.
How does the Moisture Sensitivity Level (MSL) rating of MSL 1 affect storage and handling of IRG4PH40UDPBF units?
Classified as MSL 1 (unlimited floor life), the IRG4PH40UDPBF is suitable for standard industrial storage conditions without mandatory baking prior to soldering. This simplifies inventory management and assembly scheduling, particularly beneficial in high-volume manufacturing environments. Nevertheless, adherence to JEDEC J-STD-033 guidelines—including proper desiccated packaging and humidity indicator cards—remains advisable to prevent latent moisture absorption, even though the risk window is extended compared to MSL 3 or higher components.
What role does the TO-247AC package play in thermal and electrical performance of the IRG4PH40UDPBF?
The TO-247AC package provides enhanced thermal dissipation through an exposed metal tab connected to the collector, enabling direct attachment to heatsinks with thermal interface material. Its three-lead configuration supports standard gate, collector, and emitter connections while maintaining creepage distances suitable for 1200V operation. The package’s thermal resistance (junction-to-case) is typically around 0.3°C/W, allowing efficient heat extraction for the 160W maximum power rating. Proper PCB copper pour and vias under the tab further reduce overall thermal impedance in mass-production designs.
Can the IRG4PH40UDPBF be used in series for higher voltage applications without special balancing techniques?
Series operation of IGBTs like the IRG4PH40UDPBF is generally discouraged unless explicit support exists in the design, as disparities in threshold voltage, transconductance, and switching dynamics can cause uneven voltage sharing during turn-on and turn-off. Without dynamic or static voltage-balancing circuits—such as RC snubbers or active gate control—one device may carry excessive current and fail prematurely. Infineon typically recommends against paralleling or seriating discrete IGBTs; instead, higher-voltage modules should be selected from dedicated product families designed for such configurations.

Parts with Similar Specifications

The three parts on the right have similar specifications to International Rectifier IRG4PH40UDPBF

Product Attribute IRG4PH40UD-EPBF-INF IRG4PH40UD-EPBF IRG4PH40UPBF IRG4PH50KDPBF
Part Number IRG4PH40UD-EPBF-INF IRG4PH40UD-EPBF IRG4PH40UPBF IRG4PH50KDPBF
Manufacturer Infineon Technologies International Rectifier International Rectifier International Rectifier
Gate Charge - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Vce(on) (Max) @ Vge, Ic - - - -
Current - Collector Pulsed (Icm) - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
IGBT Type - - - -
Test Condition - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Power - Max - - - -
Reverse Recovery Time (trr) - - - -
Td (on/off) @ 25°C - - - -
Current - Collector (Ic) (Max) - - - -
Input Type - - - Differential
Series - - - -
Switching Energy - - - -
Mounting Type - Surface Mount Through Hole Surface Mount

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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International Rectifier

IRG4PH40UDPBF

International Rectifier
32D-IRG4PH40UDPBF

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