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S25FL256SAGBHBA00 - Infineon Technologies

Name: Infineon Technologies S25FL256SAGBHBA00
Brand: Infineon Technologies
SKU: S25FL256SAGBHBA00
Availability: InStock
Rating: 5 (3 reviews)

Manufacturer Part Number: S25FL256SAGBHBA00

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-S25FL256SAGBHBA00

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 4,910 pcs available, New & Original

Parts Description: IC FLASH 256MBIT SPI/QUAD 24BGA

Package: 24-BGA (8x6)

Data sheet: S25FL256SAGBHBA.pdf

PCN Packaging
Date Code/Shelf Life Chgs 18/Jul/2019.pdf Ship Label REV.pdf

PCN Assembly/Origin
2.73KHz.pdf

PCN Design/Specification
Cylindrical Battery Holders.pdf

RoHs Status: ROHS3 Compliant

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In stock: 4910

Specifications

S25FL256SAGBHBA00 Tech Specifications
Infineon Technologies - S25FL256SAGBHBA00 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - S25FL256SAGBHBA00

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Write Cycle Time - Word, Page	-
Voltage - Supply	2.7V ~ 3.6V
Technology	FLASH - NOR
Supplier Device Package	24-BGA (8x6)
Series	FL-S
Package / Case	24-TBGA
Package	Tray
Operating Temperature	-40°C ~ 105°C (TA)

Product Attribute	Attribute Value
Mounting Type	Surface Mount
Memory Type	Non-Volatile
Memory Size	256Mbit
Memory Organization	32M x 8
Memory Interface	SPI - Quad I/O
Memory Format	FLASH
Clock Frequency	133 MHz
Base Product Number	S25FL256

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	3A991B1A
HTSUS	8542.32.0071

Frequently Asked Questions(FAQ)

How does the S25FL256SAGBHBA00 compare to other SPI NOR flash memory devices in terms of interface speed and typical read performance under standard 3.0V operation?: The S25FL256SAGBHBA00 supports a maximum clock frequency of up to 104 MHz in fast read mode using SPI (Serial Peripheral Interface) with dual or quad I/O capabilities, enabling high-speed data transfers common in embedded system boot and code execution applications. In typical 3.0V operation, this device achieves sustained read throughput of approximately 25–30 MB/s when utilizing quad I/O mode with continuous clocking, which is competitive among mid-range SPI NOR memories but generally lower than some newer octal or parallel-interface alternatives. Compared to entry-level SPI NOR parts limited to 50 MHz, this component offers significantly improved bandwidth, making it suitable for systems requiring faster firmware loading or runtime code updates.

What are the key differences in endurance and write cycle behavior between byte/word programming and page erase operations when using the S25FL256SAGBHBA00 in an industrial temperature environment?: The S25FL256SAGBHBA00 specifies a minimum of 100,000 program/erase cycles per block, with typical endurance around 1 million cycles under standard conditions. However, in industrial temperature ranges (-40°C to +85°C), slight increases in internal resistance may lead to marginally longer erase/program times, though this does not significantly affect cycle count. Byte/word programming typically completes within 250 µs, while sector erase (typically 4 KB) takes about 1.5–2 ms. Because each erase operation affects an entire block, frequent small writes should be buffered into larger page-sized transfers (up to 256 bytes) to minimize wear and ensure reliable long-term operation in harsh environments.

Can the S25FL256SAGBHBA00 reliably retain data over extended periods without external power, and what factors influence its data retention capability in automotive-grade applications?: Yes, the S25FL256SAGBHBA00 guarantees data retention of at least 20 years at 85°C, which exceeds requirements for most industrial and consumer applications. In automotive use cases where ambient temperatures can reach 105°C during operation, conservative design practices still allow for 10+ years of retention if storage conditions remain within specified limits. Data degradation mechanisms such as charge leakage from floating gate transistors are mitigated through advanced process scaling and oxide layer design. However, repeated high-temperature cycling combined with partial state-of-charge conditions can accelerate retention loss; therefore, full-chip erasure before prolonged storage is recommended for safety-critical systems.

What is the impact of supply voltage fluctuations on the S25FL256SAGBHBA00’s command decoding and timing margins during active read operations?: The S25FL256SAGBHBA00 operates across a 2.7V to 3.6V supply range, with nominal operation at 3.0V ±5%. Voltage droop below 2.7V may cause incomplete command reception or misinterpretation of address/data lines due to degraded noise immunity. At 3.0V, setup and hold time requirements for SPI signals remain tight—typically 15 ns for clock edges—so rapid voltage transients during power-up could violate timing unless filtered by decoupling capacitors near the VCC pin. Designers should ensure stable rail rise times (<1 µs) and maintain adequate bulk capacitance (e.g., 10–100 µF ceramic plus electrolytic) to prevent glitches that might trigger unintended state changes in status registers or block protection features.

How does the S25FL256SAGBHBA00 handle concurrent access conflicts when used alongside a microcontroller performing both flash reads and writes via DMA?: The S25FL256SAGBHBA00 includes built-in hardware write protection and status register flags that help avoid conflicts during concurrent accesses. While it does not support true multi-master arbitration like I²C, simultaneous read and write attempts initiated by a single master controller must be sequenced correctly. For instance, issuing a page program command while another transaction is ongoing may result in undefined behavior or corruption. To prevent this, software should poll the WIP (Write-In-Progress) bit in the status register before initiating new commands. When paired with a capable MCU supporting DMA-driven SPI transfers, the device allows efficient streaming reads without CPU overhead, provided queuing discipline enforces proper command ordering and respects the 104 MHz SPI clock limit.

In comparison to larger-capacity SPI NOR devices like the 512-Mbit variant, what are the practical trade-offs when selecting the S25FL256SAGBHBA00 for space-constrained IoT sensor nodes?: The S25FL256SAGBHBA00 offers sufficient capacity for storing bootloaders, application code, calibration tables, and over-the-air update images in many IoT edge devices, eliminating the need for external RAM in simple designs. Compared to 512-Mbit parts, it reduces die size, cost, and slightly lowers power consumption during active operations due to fewer bits being accessed. However, it lacks redundancy blocks or advanced ECC features found in higher-end models, increasing risk if a critical sector fails. For battery-powered sensors with infrequent updates, this trade-off favors density and simplicity; for mission-critical deployments requiring fault tolerance, a larger device with integrated error correction would be preferable despite added complexity.

What precautions should be taken when implementing hardware-based write protection using the S25FL256SAGBHBA00’s block protect (BP) bits in a production line environment?: The S25FL256SAGBHBA00 supports up to four block protect (BP0–BP3) bits in the status register, allowing selective locking of memory regions against accidental overwrite. During mass production, these bits must be programmed after final testing to preserve customer data integrity. A common pitfall is failing to disable software/hardware WP# pin functionality before setting BP bits, which could inadvertently lock the entire array. Additionally, reprogramming BP bits requires prior sector erasure, so firmware must account for this constraint. For secure manufacturing flows, a two-stage process—first enabling global write protection, then selectively unlocking only updatable sectors—ensures robust defense against field modifications while preserving updateability for future OTA patches.

How does the S25FL256SAGBHBA00 perform under rapid thermal cycling between -40°C and +105°C, and what impact does this have on solder joint reliability during reflow soldering?: The S25FL256SAGBHBA00 is rated for industrial temperature operation from -40°C to +85°C, with automotive variants extending to +105°C. Repeated thermal cycling within these bounds stresses package materials, particularly the mold compound and leadframe interfaces. Under typical JEDEC JESD22-A104 fast thermal cycling tests, the device shows no functional degradation after 1,000 cycles. However, during PCB assembly, the peak reflow temperature (usually 245°C for lead-free profiles) induces significant CTE mismatch stress between silicon die and substrate. Proper land pattern design, adequate pad sizing, and avoidance of adjacent heavy copper planes help distribute mechanical strain. SnAgCu solder joints formed with SAC305 alloys exhibit acceptable fatigue life even with multiple rework cycles, provided dwell times at peak temperature are minimized.

What role does the deep power-down mode play in extending battery life for portable devices using the S25FL256SAGBHBA00, and how quickly can the device resume normal operation?: Activating deep power-down (DP) mode via the DPD instruction reduces quiescent current from ~5 µA to less than 1 µA, offering substantial savings in low-duty-cycle applications like wearable sensors or asset trackers. Exit from DP mode occurs within 10 µs after CS# goes inactive and SCK begins toggling, restoring full functionality almost instantaneously. This latency is negligible compared to wake-up delays in microcontrollers or radios, making DP effective for minimizing overall system idle consumption. Note that DP mode does not clear volatile status registers, so configuration settings persist across exits. Care must be taken to avoid accidental entry during firmware debugging phases where unexpected reset sequences might trigger unintended power-saving states.

When integrating the S25FL256SAGBHBA00 into a Linux-based embedded system using U-Boot, what considerations apply for ensuring correct initialization and compatibility with MTD (Memory Technology Device) drivers?: The S25FL256SAGBHBA00 appears as a generic SPI NOR flash to most Linux MTD subsystems, requiring only proper SPI controller configuration and chip-select assignment in device tree entries. U-Boot recognizes it automatically via JEDEC ID (C2h for Cypress/NXP family), but custom commands may be needed to handle unique features like 4-byte addressing or non-standard erase sizes. If the device uses 4-byte addressing (which it supports), ensure the driver is compiled with CONFIG_SPI_FLASH_4BYTE_ADDR enabled. Additionally, alignment constraints exist for erase boundaries—firmware partitions must start and end on 4 KB sector boundaries to avoid partial erasures. Misalignment leads to write failures and potential data corruption during update routines.

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies S25FL256SAGBHBA00

Product Attribute
Part Number	S25FL256SAGBHBA00	S25FL256SAGBHBA00A	S25FL256SAGBHAA00	S25FL256SAGBHBA03
Manufacturer	Nexperia USA Inc.	Cypress Semiconductor Corp	Infineon Technologies	Infineon Technologies
Voltage - Supply	-	-	-	-
Memory Interface	-	-	-	-
Technology	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Memory Format	-	-	-	-
Write Cycle Time - Word, Page	-	-	-	-
Memory Organization	-	-	-	-
Memory Type	-	-	-	-
Series	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Memory Size	-	-	-	-
Clock Frequency	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Base Product Number	-	DAC34H84	MAX500	ADS62P42

S25FL256SAGBHBA00 Datasheet PDF

Download S25FL256SAGBHBA00 pdf datasheets and Infineon Technologies documentation for S25FL256SAGBHBA00 - Infineon Technologies.

PCN Packaging: Date Code/Shelf Life Chgs 18/Jul/2019.pdf Ship Label REV.pdf
PCN Assembly/Origin: 2.73KHz.pdf
PCN Design/Specification: Cylindrical Battery Holders.pdf

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Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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