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HomeProductsIntegrated Circuits (ICs)Specialized ICsIPB026N06N
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IPB026N06N - Cypress Semiconductor (Infineon Technologies)

Manufacturer Part Number
IPB026N06N
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IPB026N06N
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
12,780 pcs available, New & Original
Parts Description
IGBT Module
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
Compare
Our certification
In stock: 12780
  • Unit Price: $1.101
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $1.101 $1.10
10+ $1.006 $10.06
30+ $0.946 $28.38
100+ $0.885 $88.50
500+ $0.857 $428.50
1000+ $0.846 $846.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IPB026N06N Tech Specifications
Cypress Semiconductor (Infineon Technologies) - IPB026N06N technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor (Infineon Technologies) - IPB026N06N

Product Attribute Attribute Value
Part Number IPB026N06N
Package -
Description IGBT Module
Stock Condition Get 12780 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer Infineon Technologies
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the IPB026N06N's on-resistance compare to other 60V N-channel MOSFETs in the same package when driven at 10V gate voltage?
The IPB026N06N exhibits an RDS(on) of 2.6mΩ at Vgs = 10V and Id = 100A, which is notably low for a TO-263-3 packaged device operating at this voltage rating. When compared to similar 60V devices such as the IPB035N06N (3.5mΩ@10V) or IPD045N06N (4.5mΩ@10V), the IPB026N06N offers superior conduction efficiency due to its optimized cell design and reduced channel resistance. This lower resistance translates directly into reduced conduction losses in synchronous buck converters or motor drive applications where continuous current exceeds 50A.
What are the thermal implications of using the IPB026N06N in a high-power DC-DC converter with 100A continuous load?
At 100A continuous drain current and RDS(on) = 2.6mΩ, the IPB026N06N dissipates approximately 26W due to conduction losses alone—P = I² × R = (100)² × 0.0026 = 26W. Combined with switching losses and gate drive power, total dissipation may approach or exceed 40–50W under hard-switching conditions. Given its maximum Pd of 136W, the device can technically handle this, but thermal management becomes critical. Without a heatsink, junction temperature could rise rapidly; thus, proper PCB copper area, airflow, and possibly forced convection are necessary to maintain Tj below 175°C.
Can the IPB026N06N be reliably used as a synchronous rectifier in a 48V automotive buck converter?
Yes, the IPB026N06N is suitable for synchronous rectification in 48V systems due to its 60V VDSS rating, which provides adequate margin. Its low Qg (56nC) enables fast turn-on/turn-off, reducing dead-time-related shoot-through risk. However, the 3.3V threshold voltage requires careful gate drive design to ensure full enhancement even at low input voltages. In practice, a 12V gate drive is recommended to guarantee Vgs > 10V and minimize RDS(on) variation across temperature.
How does the reverse transfer capacitance (Crss) of the IPB026N06N influence high-frequency switching performance?
With Crss = 78pF at Vds = 30V, the IPB026N06N exhibits moderate output capacitance characteristics that affect Miller plateau duration during turn-off. While not exceptionally low like some SiC devices, this value supports operation up to several hundred kHz in typical PWM applications. However, in resonant topologies or zero-voltage switching (ZVS) converters requiring ultra-fast transitions, the cumulative effect of Ciss (5.125nF) and Qg (56nC) may limit dv/dt capability and increase switching loss unless compensated by snubbing or soft-switching techniques.
Is the IPB026N06N suitable for paralleling to achieve higher current capacity than 100A?
Paralleling multiple IPB026N06N devices introduces significant challenges due to parameter mismatches in RDS(on), threshold voltage, and package parasitics. Even minor variations in gate drive timing or thermal distribution can lead to current imbalance, causing one device to dominate and overheat. While possible with careful layout, active balancing circuits or current-sharing drivers are typically required. For most industrial designs, selecting a single higher-current-rated MOSFET or using a module-based solution would be more reliable than parallel discrete parts like the IPB026N06N.
What gate drive considerations are essential when switching the IPB026N06N at frequencies above 50kHz?
The IPB026N06N has a relatively high gate charge of 56nC, meaning significant energy must be delivered per switching cycle. At 50kHz, this results in a gate drive power requirement of approximately 56nC × Vgs × f = 56×10⁻⁹ × 10 × 50,000 ≈ 28mW per switch. However, peak current demand from the driver can reach several amps depending on trace inductance and PCB layout. To minimize switching losses and avoid excessive stress on the gate oxide, use a dedicated MOSFET driver IC capable of sourcing/sinking high peak currents with short propagation delays.
How does the IPB026N06N perform in terms of avalanche ruggedness compared to standard logic-level FETs?
Unlike many logic-level MOSFETs designed primarily for low-voltage, low-loss applications, the IPB026N06N incorporates robust avalanche capabilities typical of power MOSFETs intended for industrial and automotive environments. It supports single-pulse avalanche energy ratings well above 100mJ, allowing it to absorb inductive kickback without failure—critical in motor drives or relay control circuits. This distinguishes it from devices with lower VBR and thinner epitaxial layers, which often lack reliable avalanche protection.
What impact does operating temperature have on the RDS(on) of the IPB026N06N?
The RDS(on) of the IPB026N06N increases with temperature due to positive temperature coefficient behavior in the drift region. At 25°C, RDS(on) is specified at 2.6mΩ, but it can rise by roughly 0.7% per °C near room temperature. In a 100A application with ambient temperature rising to 85°C, expect RDS(on) to increase to about 2.9mΩ—raising conduction losses by nearly 12%. This self-heating effect necessitates derating or enhanced cooling to maintain efficiency and prevent thermal runaway.
How should layout parasitics affect the choice of gate resistor when driving the IPB026N06N in a compact PCB design?
Although no explicit gate resistor is listed in the datasheet, practical implementations often include a small series resistor (e.g., 5–22Ω) to dampen oscillations caused by PCB trace inductance interacting with the gate capacitance. For the IPB026N06N’s 5.125nF Ciss, even 10nH of stray inductance can resonate near 1MHz. A properly sized gate resistor reduces ringing without significantly increasing switching losses, especially important in densely populated boards where loop areas are minimized.
Can the IPB026N06N be used in a half-bridge configuration for a 400V bus system?
No, the IPB026N06N has a maximum drain-source voltage (VDSS) of 60V, making it incompatible with 400V bus applications. Attempting to use it in such a system would result in immediate breakdown and catastrophic failure. For 400V half-bridges, MOSFETs with VDSS ≥ 650V are required. The IPB026N06N is appropriate only for lower-voltage platforms such as 24V, 36V, or 48V distributed power architectures common in telecom, computing, and mild-hybrid vehicles.
What role does the TO-263-3 package play in the thermal and electrical performance of the IPB026N06N?
The TO-263-3 package provides excellent thermal conductivity through its metal tab connected to the source, enabling efficient heat sinking to a PCB plane or external heatsink. This contributes significantly to the IPB026N06N’s rated power dissipation of 136W, which assumes proper mounting. Its surface-mount compatibility also allows automated assembly and compact board footprints. However, parasitic inductance from bond wires remains higher than in D²PAK variants, potentially affecting high-frequency switching behavior if not managed via layout optimization.
How does the IPB026N06N compare to silicon carbide (SiC) MOSFETs in mixed-voltage battery management systems?
While the IPB026N06N offers competitive RDS(on) and cost-effective performance for 60V systems, SiC MOSFETs provide lower losses at very high frequencies (>100kHz), faster switching speeds, and superior thermal stability. However, the IPB026N06N remains advantageous where moderate frequency operation (<50kHz), lower EMI sensitivity, and cost constraints prevail. In battery disconnect switches or precharge circuits, the Infineon part delivers sufficient reliability and efficiency without the complexity or expense of SiC-based solutions.
What precautions should be taken when replacing the IPB026N06N in an existing design with another MOSFET?
Substituting any MOSFET requires verifying compatibility across VDSS, ID, RDS(on), Qg, and package footprint. Replacing the IPB026N06N with a device having higher Qg or different threshold voltage may necessitate redesign of the gate drive stage. Also confirm thermal impedance matches—otherwise, the replacement might overstress under identical conditions. Always validate switching waveforms, efficiency, and temperature rise in prototype testing before committing to production.
Does the IPB026N06N support body diode conduction in freewheeling or clamp applications?
Yes, the IPB026N06N includes an intrinsic body diode capable of conducting reverse current during dead time in half-bridge configurations. However, its forward voltage drop (~0.8V at 10A) and recovery characteristics are slower than external Schottky diodes, leading to increased losses in synchronous rectification. Thus, while usable, performance is suboptimal compared to dedicated freewheel diodes or active synchronous control strategies.
How does the IPB026N06N’s operating temperature range (-55°C to +175°C) benefit automotive or aerospace applications?
The wide junction temperature range (-55°C to +175°C) ensures reliable operation across extreme environments encountered in automotive powertrains or avionics systems. Unlike commercial-grade parts limited to 150°C, the IPB026N06N withstands soldering reflow cycles and sustained operation near its thermal limit without degradation. This makes it suitable for under-the-hood electronics where ambient temperatures can fluctuate dramatically and long-term reliability is non-negotiable.
What trade-offs exist between using the IPB026N06N versus integrated MOSFET modules in high-density power stages?
Discrete IPB026N06N MOSFETs offer flexibility, lower unit cost at volume, and easier parametric tuning but require external gate drivers, layout optimization, and thermal monitoring. Integrated modules combine multiple components (MOSFETs, drivers, protection) into a single package, simplifying design but increasing BOM count and reducing scalability. For moderate power levels (<2kW), the IPB026N06N provides a balanced approach between performance and integration cost.

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Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
  • QC (Quality Warranty)
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Allelco is committed to exceeding customer expectations through customer service excellence, order accuracy, and on-time delivery.
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Electrostatic Discharge Protection and Handling

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  • ISO 9001: 2015
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IPB026N06N Image

IPB026N06N

Cypress Semiconductor (Infineon Technologies)
32D-IPB026N06N

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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