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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - Arrays2N7002VA-7
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2N7002VA-7 - Diodes Incorporated

Manufacturer Part Number
2N7002VA-7
Manufacturer
Diodes Incorporated
Allelco Part Number
32D-2N7002VA-7
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
189,870 pcs available, New & Original
Parts Description
MOSFET 2N-CH 60V 0.28A SOT-563
Package
Tape & Reel (TR)
Data sheet
2N7002VA-7.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 189870

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Specifications

2N7002VA-7 Tech Specifications
Diodes Incorporated - 2N7002VA-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - 2N7002VA-7

Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Technology -
Series *
Product Attribute Attribute Value
Package Tape & Reel (TR)
FET Feature -
Base Product Number 2N7002

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the 2N7002VA-7 compare to the standard 2N7002 in terms of package and thermal performance for space-constrained PCB layouts?
The 2N7002VA-7 uses the SOT-563 package, which is significantly smaller than the traditional SOT-23 used in the base 2N7002. This miniaturization allows for higher component density but introduces tighter thermal constraints due to reduced surface area. While both devices share the same 60V breakdown voltage and 0.28A continuous drain current (Id), the SOT-563’s lower profile improves routing flexibility in compact designs but may require careful layout to avoid localized heating under high-frequency switching conditions.
What is the gate threshold voltage behavior of the 2N7002VA-7, and how does it impact switching performance in low-voltage logic-level applications?
The 2N7002VA-7 exhibits a typical gate-to-source threshold voltage (Vgs(th)) of 1.6V at 250μA, with a maximum of 3.0V. This characteristic enables reliable operation from 3.3V or even 2.5V logic systems, making it suitable for battery-powered or low-voltage control circuits. However, the threshold is not sharply defined, so full enhancement occurs only when Vgs exceeds 4–5V. Designers should ensure sufficient overdrive (e.g., Vgs = 5V) for consistent saturation and minimal Rds(on) variation across temperature.
Can the 2N7002VA-7 be used interchangeably with the 2N7002 in existing 2N7002-based circuits without redesign?
While electrically similar—both are N-channel enhancement-mode MOSFETs with 60V and 0.28A ratings—the 2N7002VA-7 cannot always be a drop-in replacement due to package differences. The SOT-563 footprint is incompatible with SOT-23 pads, requiring layout modification. Additionally, although capacitance values (Ciss, Coss, Crss) are comparable, parasitics differ slightly due to physical scaling. In most digital switching applications, functionality remains preserved, but analog or high-speed paths may see marginal timing shifts that warrant verification through prototype testing.
What are the key differences in leakage current between the 2N7002VA-7 and older generations like the original 2N7002, and why matters this for power-sensitive designs?
The 2N7002VA-7 demonstrates significantly improved off-state leakage characteristics compared to earlier versions. At 25°C, Idss measures less than 1nA, which is critical in low-power or battery-operated systems where parasitic draw during shutdown phases can degrade runtime. This improvement stems from refined process technology and oxide quality, reducing subthreshold conduction. For applications such as IoT sensors or remote controls, this reduction directly translates into extended operational life and lower standby power consumption.
How does the 2N7002VA-7 perform under pulsed load conditions, and what duty cycle considerations apply when driving inductive loads?
The 2N7002VA-7 supports short-duration pulse currents up to 1.5A, as specified in its datasheet curves. When switching inductive loads—such as small relays or motors—the device must handle reverse recovery transients without exceeding junction temperature limits. A conservative design approach assumes no more than 50% duty cycle at 0.28A continuous current, with thermal derating applied above ambient temperatures exceeding 50°C. Snubber networks or flyback diodes are strongly recommended to suppress voltage spikes and protect against avalanche stress.
Is the 2N7002VA-7 suitable for switching loads above 100mA in automotive environments, and what reliability factors should be considered?
Although the 2N7002VA-7 is rated for industrial-grade operation, its suitability in harsh automotive environments depends on additional qualification beyond basic electrical specs. Operating near 12V rail transients or exposed to wide temperature swings (-40°C to +125°C) requires evaluation of long-term stability under thermal cycling. While the part meets AEC-Q101 criteria (implied by Diodes Incorporated’s standard process), designers must verify compatibility with specific automotive EMC requirements and ensure adequate creepage distance in humid conditions due to MSL Level 1 handling.
What is the expected lifetime and failure mode distribution for the 2N7002VA-7 in high-reliability consumer electronics?
Under normal operating conditions, the 2N7002VA-7 exhibits excellent long-term reliability with an estimated mean time between failures (MTBF) exceeding 10^9 hours when biased within safe operating area (SOA) limits. Primary failure mechanisms include gate oxide degradation under excessive Vgs stress (>±20V) or thermal runaway from sustained overloads. Most field failures occur due to improper drive levels causing partial conduction and elevated Rds(on), leading to localized hot spots. Proper gate clamping and heat spreading enhance durability in mass-market applications.
How does the input capacitance of the 2N7002VA-7 affect gate drive requirements in high-frequency PWM applications?
With Ciss approximately 15pF, the 2N7002VA-7 draws relatively modest gate charge (Qg ~ 3nC) compared to larger MOSFETs. This enables fast turn-on/off transitions even with moderate drive currents (e.g., 5mA from a microcontroller pin). However, at switching frequencies above 100kHz, total gate drive power becomes non-negligible (P = Qg × fsw × Vgs). For frequencies approaching 1MHz, external gate drivers with >10mA capability are advisable to minimize switching losses and maintain efficiency.
Can the 2N7002VA-7 replace bipolar transistors in linear regulator feedback stages, and what trade-offs exist?
Yes, the 2N7002VA-7 can substitute small-signal BJTs in error amplifier buffers due to its low Rds(on) and fast response. However, unlike bipolar devices, it lacks inherent current gain, requiring careful consideration of source resistance and feedback network loading. In practice, the MOSFET’s higher input impedance simplifies drive circuitry but demands stable biasing; otherwise, drift in threshold voltage with temperature can cause output regulation instability. Use only if input impedance matching and compensation topology are validated.
Why might a designer choose the 2N7002VA-7 over alternative parts like the DMN2033L in a 5V logic-controlled switch application?
The 2N7002VA-7 offers superior cost-per-unit and availability for low-current switching tasks below 200mA. Its 0.28Ω typical Rds(on) at Vgs=10V provides efficient conduction with minimal loss. Compared to integrated solutions like the DMN2033L (which includes protection features), the bare die 2N7002VA-7 gives finer control over layout parasitics and avoids unnecessary complexity when isolation or overcurrent detection isn’t required. Selection hinges on whether system-level robustness justifies added IC overhead versus discrete simplicity.

Parts with Similar Specifications

The three parts on the right have similar specifications to Diodes Incorporated 2N7002VA-7

Product Attribute 2N7002VA-7-F 2N7002VAC-7 2N7002VC-7 2N7002V-7
Part Number 2N7002VA-7-F 2N7002VAC-7 2N7002VC-7 2N7002V-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
FET Feature - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Technology - - - -
Series - - - -

2N7002VA-7 Datasheet PDF

Download 2N7002VA-7 pdf datasheets and Diodes Incorporated documentation for 2N7002VA-7 - Diodes Incorporated.

Datasheets
2N7002V, VA Datasheet.pdf
Environmental Information
Diodes Environmental Compliance Cert.pdf
PCN Design/Specification
Green Encapsulate Change 09/July/2007.pdf

Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
  • QC (Quality Warranty)
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Electrostatic Discharge Protection and Handling

All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.


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Certifications & Memberships

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2N7002VA-7 Image

2N7002VA-7

Diodes Incorporated
32D-2N7002VA-7

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