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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleDMN2011UTS-13
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DMN2011UTS-13 - Diodes Incorporated

Manufacturer Part Number
DMN2011UTS-13
Manufacturer
Diodes Incorporated
Allelco Part Number
32D-DMN2011UTS-13
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
227,570 pcs available, New & Original
Parts Description
MOSFET N-CH 20V 21A 8TSSOP
Package
8-TSSOP
Data sheet
DMN2011UTS-13.pdf

Datasheets

DMN2011UTS.pdf

Environmental Information

Diodes Environmental Compliance Cert.pdf

PCN Assembly/Origin

Mult Dev A/T Site 31/Mar/2021.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 227570
  • Unit Price: $2.319
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.15 $0.15
10+ $0.147 $1.47
30+ $0.145 $4.35
100+ $0.143 $14.30
200+ $0.898 $179.60
400+ $0.866 $346.40
800+ $0.85 $680.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

DMN2011UTS-13 Tech Specifications
Diodes Incorporated - DMN2011UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - DMN2011UTS-13

Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSSOP
Series -
Rds On (Max) @ Id, Vgs 11mOhm @ 7A, 4.5V
Power Dissipation (Max) 1.3W (Ta)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2248 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Base Product Number DMN2011

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What is the maximum continuous drain current and how does it relate to thermal performance for the DMN2011UTS-13 at 25°C?
The DMN2011UTS-13 can sustain a continuous drain current of 21A when measured at the case temperature (Tc) under steady-state conditions at 25°C ambient. This rating assumes adequate heat sinking; without proper thermal management, power dissipation drops significantly due to junction-to-case thermal resistance limitations. At 1.3W total power dissipation in free air (Ta), the device cannot handle full 21A indefinitely unless mounted on a heatsink. Designers must consider both electrical and thermal derating based on actual operating environment and airflow.
How does the Rds(on) of the DMN2011UTS-13 behave across different gate-source voltages, and what implications does this have for low-voltage switching applications?
The DMN2011UTS-13 exhibits an Rds(on) of 11mΩ maximum at Vgs = 4.5V and Id = 7A, and slightly higher values at lower gate drive voltages. This means that with a standard 3.3V logic signal, the conduction loss increases compared to a 4.5V drive. For battery-powered systems where gate drive voltage is limited, this results in reduced efficiency and higher conduction losses. Engineers should verify that the available Vgs exceeds 4.5V to stay within the specified Rds(on) curve and minimize power dissipation during conduction.
What is the gate charge (Qg) and input capacitance (Ciss) of the DMN2011UTS-13, and how do they affect switching speed in high-frequency designs?
The DMN2011UTS-13 has a maximum gate charge (Qg) of 56nC at Vgs = 10V and an input capacitance (Ciss) of 2248pF at Vds = 10V. These parasitics determine how quickly the MOSFET can turn on and off when driven by a gate driver. In switching frequencies above 500kHz, the energy required to charge and discharge the gate increases linearly with frequency, leading to significant dynamic power loss. High Ciss also demands sufficient gate drive current from the controller to achieve fast transitions, which may necessitate a dedicated gate driver IC to maintain switching efficiency.
Can the DMN2011UTS-13 be used in synchronous buck converters, and what are the key considerations for minimizing body diode conduction?
Yes, the DMN2011UTS-13 is suitable for use as a synchronous rectifier in buck converter topologies due to its low Rds(on) and fast switching characteristics. However, the internal body diode conducts during dead time when the complementary switch is turning off, especially at light loads. To minimize reverse recovery losses and diode conduction time, the dead time must be carefully controlled, and the MOSFET should be selected such that its threshold voltage allows immediate conduction when the opposing FET turns off. The DMN2011’s low Vgs(th) of 1V helps ensure rapid turn-on even with weak gate drive, improving efficiency.
How does the DMN2011UTS-13 compare to other N-channel MOSFETs like the IRLZ44N in terms of gate drive requirements and Rds(on)?
Unlike older devices such as the IRLZ44N, which requires up to 10V for optimal Rds(on), the DMN2011UTS-13 achieves low Rds(on) at just 4.5V Vgs, making it compatible with modern 3.3V and 5V logic levels. The IRLZ44N typically has higher Rds(on) (~22mΩ at 10V), resulting in greater conduction losses. Additionally, the DMN2011 offers much lower gate charge and capacitance, enabling faster switching and better high-frequency performance. For space-constrained, high-efficiency applications, the DMN2011UTS-13 provides superior integration and performance compared to legacy parts.
What happens if the gate-source voltage exceeds ±12V on the DMN2011UTS-13, and how can this be mitigated in design?
Exceeding the ±12V absolute maximum on Vgs risks damaging the gate oxide layer, potentially causing permanent failure or leakage. Although the device can tolerate brief transients, sustained overvoltage degrades reliability. In automotive or industrial systems with inductive spikes, a gate clamp circuit—such as a Zener diode or TVS array—is recommended. A 12V Zener between gate and source can limit voltage excursions while allowing normal switching behavior within safe limits.
Is the DMN2011UTS-13 suitable for load switching in battery-powered devices, and what trade-offs exist between efficiency and size?
The DMN2011UTS-13 is well-suited for load switching in portable electronics due to its low Rds(on) and small 8-TSSOP package. At 11mΩ, conduction losses are minimal even at several amps, improving battery life. However, the compact footprint limits exposed thermal pads or direct attachment to PCB copper for heat spreading. Without careful layout—such as using multiple thermal vias and wide traces—the junction temperature can rise quickly under continuous high current, requiring either thermal derating or additional heatsinking in rugged environments.
How does the operating temperature range of the DMN2011UTS-13 impact long-term reliability in harsh environments?
With a junction operating temperature range from -55°C to +150°C, the DMN2011UTS-13 supports operation in extreme conditions common in aerospace, automotive, or industrial systems. However, elevated temperatures accelerate electromigration and reduce mean time between failures (MTBF). At 150°C, the device still functions, but power dissipation must be derated to prevent thermal runaway. Designers should calculate actual TJ using thermal resistance models and ensure worst-case ambient temperatures do not push the junction beyond safe limits over the product lifecycle.
What is the significance of the Moisture Sensitivity Level (MSL) rating of 1 for the DMN2011UTS-13, and how does it affect manufacturing handling?
The MSL rating of 1 indicates that the DMN2011UTS-13 is not sensitive to moisture absorption and can be stored indefinitely without baking prior to reflow soldering. This simplifies supply chain logistics and reduces processing steps, lowering manufacturing cost and risk of popcorning defects. It makes the component ideal for high-volume production where storage flexibility and reliability are critical. Manufacturers can accept tape-and-reel shipments directly into assembly lines without special handling protocols.
How does the DMN2011UTS-13 perform in terms of input/output capacitance matching when used in resonant converters?
The DMN2011UTS-13 features an input capacitance (Ciss) of 2248pF at 10V, which includes Miller capacitance (Crss) and gate-drain overlap capacitance. In resonant topologies like LLC or zero-voltage switching (ZVS) converters, these capacitances influence switching timing and resonance tuning. While not optimized specifically for resonant operation, its moderate Ciss allows predictable timing behavior. Careful gate drive design and snubbing circuits may be needed to avoid unintended oscillations or inefficient commutation due to capacitive coupling between input and output terminals.
What are the advantages of using the DMN2011UTS-13 in high-side vs. low-side switching configurations compared to larger TO-252 packages?
The DMN2011UTS-13 offers lower gate charge and capacitance than many equivalent TO-252 MOSFETs, reducing switching losses in high-side configurations where bootstrap capacitors must recharge rapidly. Its 8-TSSOP package occupies less board area, enabling higher component density. However, thermal performance is inferior to through-hole packages due to smaller surface area for heat dissipation. For compact, high-frequency applications where space and speed outweigh thermal concerns, the DMN2011UTS-13 provides better overall system efficiency and layout flexibility.
How does the threshold voltage (Vgs(th)) of the DMN2011UTS-13 compare to other logic-level MOSFETs, and what does this mean for digital interfacing?
With a maximum Vgs(th) of 1V at Id = 250µA, the DMN2011UTS-13 has one of the lowest thresholds among comparable N-channel MOSFETs. This enables full enhancement even with weak pull-up signals, making it ideal for interfacing with microcontrollers that output 1.8V or 3.3V logic. Devices with higher Vgs(th), such as older logic-level types, may require boosted gate drives or level shifting. The DMN2011’s steep subthreshold slope ensures near-zero gate current and immediate conduction once Vgs exceeds threshold, simplifying control circuitry.
Can the DMN2011UTS-13 be paralleled safely for higher current applications, and what precautions are necessary?
While paralleling MOSFETs like the DMN2011UTS-13 can increase total current capacity, it introduces challenges due to parameter mismatches in Rds(on), Vgs(th), and thermal behavior. Unless each device shares current equally via matched gate drivers, low-Rds(on) units will conduct more current and overheat first. Proper techniques include using individual gate resistors, symmetric layouts, and thermal feedback. For most applications, it's more reliable to use a single higher-rated MOSFET or a module rather than relying on parallel discrete parts without extensive characterization.
What role does the base product number (DMN2011) play in identifying compatible variants of the DMN2011UTS-13?
The base product number DMN2011 refers to a family of devices sharing core specifications but differing in packaging or marking. The DMN2011UTS-13 is one variant packaged in 8-TSSOP with Tape & Reel. Other members might come in SOIC or DFN formats. Engineers should verify all parameters—especially voltage ratings, pinout, and thermal performance—across variants before substituting. Using the full model number ensures correct selection based on application needs such as automated placement or thermal management.
How does the DMN2011UTS-13 comply with RoHS and REACH regulations, and why matters this for global market access?
The DMN2011UTS-13 is RoHS3 compliant, meaning it meets the latest European restrictions on hazardous substances including lead, mercury, and cadmium. It is also REACH unaffected, indicating no SVHC (substance of very high concern) content above regulatory thresholds. This compliance ensures the device can be legally sold into the EU and other regulated markets without additional documentation or reformulation. For OEMs designing products for international deployment, sourcing RoHS-compliant components like the DMN2011UTS-13 reduces certification overhead and avoids supply chain disruptions.
What is the typical application profile for the DMN2011UTS-13, and how does it differ from power MOSFETs intended for linear regions?
The DMN2011UTS-13 is designed for switching applications such as DC-DC converters, motor drivers, and load switches where it operates fully on or off. Unlike linear-mode power MOSFETs used in amplifiers, it is optimized for minimal Rds(on) and fast switching to reduce conduction and switching losses. Operating in saturation (on) or cutoff (off), it avoids dissipating power continuously, unlike linear regulators. This makes it highly efficient for digital-like control schemes common in modern embedded systems.
How does the package size (8-TSSOP) influence PCB layout and thermal performance when using the DMN2011UTS-13?
The 8-TSSOP package measures 4.4mm x 3.0mm and uses a thermally enhanced pad for improved conduction. While smaller than TO-220 packages, it still allows reasonable heat spreading when connected to a solid ground plane via multiple vias. However, the limited surface area restricts passive cooling compared to larger formats. Effective thermal design requires placing the device close to the PCB edge, avoiding obstructions, and connecting the thermal pad directly to internal layers with high copper coverage to maintain junction temperature below 125°C under load.
Why might a designer choose the DMN2011UTS-13 over a higher-voltage MOSFET despite having a 20V application margin?
Even with sufficient voltage headroom, choosing a MOSFET with higher Vds rating than needed often results in increased Rds(on), gate charge, and cost. The DMN2011UTS-13 targets 20V systems efficiently with optimized doping profiles and cell design, delivering best-in-class Rds(on) per unit area. Using a 30V device would likely result in worse performance and larger size for no functional benefit. Selecting a device rated exactly for the expected voltage bus maximizes efficiency, minimizes parasitic effects, and optimizes form factor.

Parts with Similar Specifications

The three parts on the right have similar specifications to Diodes Incorporated DMN2011UTS-13

Product Attribute DMN2011UFDF-13 DMN2011UFDE-13 DMN2009USS-13 DMN2011UFDF-7
Part Number DMN2011UFDF-13 DMN2011UFDE-13 DMN2009USS-13 DMN2011UFDF-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Rds On (Max) @ Id, Vgs - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
FET Feature - - - -
FET Type - - - -
Series - - - -
Vgs (Max) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Drain to Source Voltage (Vdss) - - - -
Vgs(th) (Max) @ Id - - - -
Power Dissipation (Max) - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Input Capacitance (Ciss) (Max) @ Vds - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Technology - - - -

DMN2011UTS-13 Datasheet PDF

Download DMN2011UTS-13 pdf datasheets and Diodes Incorporated documentation for DMN2011UTS-13 - Diodes Incorporated.

Datasheets
DMN2011UTS.pdf
Environmental Information
Diodes Environmental Compliance Cert.pdf
PCN Assembly/Origin
Mult Dev A/T Site 31/Mar/2021.pdf

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DMN2011UTS-13 Image

DMN2011UTS-13

Diodes Incorporated
32D-DMN2011UTS-13

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