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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleDMN3024SFG-7
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DMN3024SFG-7 - Diodes Incorporated

Manufacturer Part Number
DMN3024SFG-7
Manufacturer
Diodes Incorporated
Allelco Part Number
32D-DMN3024SFG-7
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
282,940 pcs available, New & Original
Parts Description
MOSFET N-CH 30V 7.5A PWRDI3333-8
Package
PowerDI3333-8
Data sheet
DMN3024SFG-7.pdf

Datasheets

DMN3024SFG.pdf

Environmental Information

Diodes Environmental Compliance Cert.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 282940
  • Unit Price: $0.118
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.118 $0.12
10+ $0.115 $1.15
30+ $0.113 $3.39
100+ $0.111 $11.10
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

DMN3024SFG-7 Tech Specifications
Diodes Incorporated - DMN3024SFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - DMN3024SFG-7

Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package POWERDI3333-8
Series -
Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 10V
Power Dissipation (Max) 900mW (Ta)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 479 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Base Product Number DMN3024

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the DMN3024SFG-7 compare to other N-channel MOSFETs in terms of Rds(on) at 10V gate-source voltage when handling continuous drain currents above 5A?
The DMN3024SFG-7 achieves an Rds(on) of 23mΩ at Id = 10A and Vgs = 10V, which is competitive among low-voltage N-channel devices in the PowerDI3333-8 package. For reference, typical Rds(on) values for comparable logic-level MOSFETs with similar current ratings range from 18mΩ to 35mΩ under identical test conditions. This level of on-resistance translates to approximately 2.3W of power dissipation at full continuous drain current, necessitating careful thermal management in compact designs unless operating below 6A.
What are the implications of the DMN3024SFG-7’s 900mW maximum power dissipation when used in a high-frequency switching application such as a buck converter?
In a buck converter operating at moderate frequencies (e.g., 1–2 MHz), the DMN3024SFG-7’s 900mW power dissipation rating applies primarily to ambient conditions without forced airflow. If conduction losses dominate due to high duty cycle or elevated current, sustained operation near 7.5A may require heatsinking or derating significantly. However, at lower currents—such as 3–4A—the device can operate reliably within its specified limits even in free air, especially if switching losses are minimized through proper gate drive design.
Can the DMN3024SFG-7 be safely driven directly by a 3.3V microcontroller GPIO pin without risking excessive Rds(on) or reliability issues?
While the DMN3024SFG-7 features a low Vgs(th) of 2.4V, its Rds(on) increases noticeably below 4.5V gate drive. At 3.3V, the Rds(on) may rise to 30mΩ or higher, increasing conduction losses and heat generation compared to full enhancement at 10V. Although short-term operation is possible, prolonged use at reduced gate voltage increases the risk of thermal stress and reduced efficiency, particularly in high-current applications. A dedicated gate driver or level-shifter circuit is recommended for optimal performance.
How does the gate charge (Qg = 10.5 nC) of the DMN3024SFG-7 influence switching speed and driver requirements in synchronous rectification topologies?
With a total gate charge of 10.5 nC at Vgs = 10V, the DMN3024SFG-7 requires moderate drive current to switch rapidly. For example, achieving a turn-on time of less than 10 ns demands approximately 1.05A peak current from the gate driver. This places it between very fast switches and slower logic-level types. In synchronous buck converters, this balance allows reasonable efficiency but may limit switching frequency scalability beyond 2–3 MHz unless using a robust gate driver IC.
Is the DMN3024SFG-7 suitable for use in automotive lighting control circuits where temperature extremes and long-term reliability are critical?
The DMN3024SFG-7 operates across -55°C to 150°C junction temperature range, meeting basic automotive grade thermal requirements. Its PowerDI3333-8 package offers good solder joint reliability under thermal cycling. However, while it complies with RoHS3 and is REACH unaffected, it lacks formal AEC-Q101 qualification. Therefore, although usable in non-critical automotive auxiliary systems, it is not ideal for primary load switching where certification is mandatory.
What layout considerations are necessary when implementing the DMN3024SFG-7 in a high-density PCB design to minimize parasitic inductance and ensure stable operation?
The PowerDI3333-8 package features exposed thermal pads and multiple source vias that must connect directly to the ground plane with minimal loop area. Place decoupling capacitors within 1mm of the source leads to suppress high dv/dt ringing. Kelvin connections from gate driver to gate and source help maintain accurate feedback during fast transitions. Thermal vias under the die attach pad improve heat spreading and reduce hotspots, especially when Id exceeds 5A.
How does the input capacitance (Ciss = 479 pF) affect EMI performance in PWM-driven loads like DC motors using the DMN3024SFG-7?
The 479 pF input capacitance, combined with output capacitance (Crss ~120 pF), forms a resonant network with parasitic inductance in the gate drive path. This can generate high-frequency noise if gate resistance is too low. Adding a small series resistor (e.g., 2–10 Ω) dampens oscillations and reduces radiated emissions. Additionally, slow edge rates help mitigate electromagnetic interference but increase switching losses slightly—a trade-off evaluated based on system priority.
When selecting between the DMN3024SFG-7 and alternative MOSFETs like the DMG2014L, what key electrical and packaging factors should guide the decision?
Compared to the DMG2014L (P-channel, 20V, 3.7A), the DMN3024SFG-7 offers higher current capacity (7.5A vs. 3.7A), lower Rds(on) (23mΩ vs. ~65mΩ at Vgs=10V), and better suitability for high-side or synchronous configurations. The N-channel type also enables simpler bootstrap circuitry in half-bridge applications. However, the P-channel DMG2014L may be preferable in cost-sensitive, low-power reverse-polarity protection scenarios. Packaging differences (PowerDI3333-8 vs. SOT-23) further influence board space and thermal performance.
What is the expected lifetime and failure mode profile of the DMN3024SFG-7 under repetitive avalanche conditions common in inductive load switching?
The DMN3024SFG-7 does not specify avalanche energy rating in its datasheet, indicating limited robustness against unclamped inductive switching. Without external snubbers or flyback diodes, repeated energizing of motors or relays can lead to cumulative damage over time, manifesting as increased leakage current or catastrophic breakdown. For inductive loads, always include a freewheeling diode or RC snubber to protect the device and ensure compliance with IEC 61000-4-4 transient immunity standards.
How does the Moisture Sensitivity Level (MSL = 1) impact storage and handling procedures for bulk quantities of DMN3024SFG-7 in tape-and-reel format?
MSL 1 indicates unlimited shelf life under normal dry storage conditions (below 30°C and <60% RH). No baking or special handling before reflow is required, simplifying supply chain logistics. However, once removed from sealed packaging, the components should be used within manufacturer-recommended timeframes—typically 12 months—to avoid potential moisture-induced popcorning during reflow soldering.
Can the DMN3024SFG-7 replace the base product number DMN3024 in legacy designs without modifications to PCB footprint or thermal profiles?
Yes, the DMN3024SFG-7 uses the same PowerDI3333-8 package as the standard DMN3024, ensuring mechanical compatibility. Electrical parameters are nearly identical, though minor variations in threshold voltage or Rds(on) tolerance (±20%) may exist between batches. Assuming the original design accounts for these tolerances, direct substitution is feasible without altering the PCB layout. Always verify thermal performance under worst-case conditions post-substitution.
What are the consequences of exceeding the ±25V Vgs(max) specification when driving the DMN3024SFG-7 with transient spikes from long gate traces?
Exceeding ±25V on the gate-source terminal risks oxide layer degradation within the MOSFET structure. Even brief excursions above this limit can accelerate wear-out mechanisms, leading to gradual increases in leakage current and eventual functional failure. In systems with long gate traces or noisy environments, adding a Zener clamp (e.g., 18V bidirectional) close to the package significantly improves robustness without affecting normal switching behavior.
How does the continuous drain current rating of 7.5A (Ta) translate to real-world applications considering PCB copper weight and airflow?
The 7.5A rating assumes natural convection cooling on a typical FR4 board with 2 oz copper and adequate trace width (>20 mil). In practice, derating is necessary for continuous operation above 5A due to self-heating. For instance, at 6A, power dissipation could reach ~1.38W (I²R), raising junction temperature by ~35°C above ambient in still air. Thus, layouts must incorporate thermal relief, wider pads, and possibly airflow to stay within safe operating areas.
What role does the gate charge curve play in optimizing dead-time settings when using two DMN3024SFG-7 devices in a half-bridge configuration?
The Qg vs. Vgs curve determines how quickly the gate voltage reaches the desired level, directly influencing turn-on/turn-off times. Since both legs of the half-bridge share gate drivers, matching Qg ensures symmetrical switching behavior and avoids shoot-through. Given the 10.5 nC total charge, precise dead-time calibration (typically 50–200 ns depending on Vdd and load) minimizes overlap conduction and protects against cross-conduction during transitions.
Are there any known limitations regarding the DMN3024SFG-7’s use in linear amplifier applications versus switching modes?
The DMN3024SFG-7 is optimized for digital switching applications. Operating it in class AB or linear mode leads to excessive power dissipation due to simultaneous conduction in partially enhanced state, resulting in poor efficiency and rapid thermal runaway. The device lacks secondary breakdown protection and has no specified SOA (Safe Operating Area) curves for dynamic loads, making it unsuitable for audio amplifiers or variable gain stages without extensive derating and heatsinking.
How does the absence of a specified Safe Operating Area (SOA) curve affect design margin calculations involving the DMN3024SFG-7?
Without explicit SOA data, engineers must rely on conservative assumptions based on Vdss, Id, and pulse duration. The device’s ruggedness is implied by its 30V rating and 7.5A capability, but transient events like turn-on under load or short-circuit conditions remain unpredictable. To ensure reliability, limit operating conditions to well within DC ratings and incorporate current limiting or foldback techniques in fault-prone environments such as battery-powered systems.
What are the benefits of using the DMN3024SFG-7 in a synchronous OR-ing controller for USB-C power delivery applications?
In USB-PD systems requiring bidirectional current paths, the DMN3024SFG-7 provides low Rds(on) and fast switching, minimizing conduction and switching losses during forward and reverse power flow. Its small form factor fits tightly in high-density designs, while the integrated body diode supports brief reverse current transients. When paired with appropriate control logic, it enables efficient power routing with minimal voltage drop (<140mV at 7.5A), improving overall system efficiency above 90%.

Parts with Similar Specifications

The three parts on the right have similar specifications to Diodes Incorporated DMN3024SFG-7

Product Attribute DMN3024SFG-13 DMN3025LFG-7 DMN3024LSS-13 DMN3025LFDF-7
Part Number DMN3024SFG-13 DMN3025LFG-7 DMN3024LSS-13 DMN3025LFDF-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Vgs (Max) - - - -
FET Feature - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Series - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Vgs(th) (Max) @ Id - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Drive Voltage (Max Rds On, Min Rds On) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Technology - - - -
Rds On (Max) @ Id, Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Drain to Source Voltage (Vdss) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
FET Type - - - -
Power Dissipation (Max) - - - -

DMN3024SFG-7 Datasheet PDF

Download DMN3024SFG-7 pdf datasheets and Diodes Incorporated documentation for DMN3024SFG-7 - Diodes Incorporated.

Datasheets
DMN3024SFG.pdf
Environmental Information
Diodes Environmental Compliance Cert.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
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Diodes Incorporated

DMN3024SFG-7

Diodes Incorporated
32D-DMN3024SFG-7

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