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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleDMP3056L-7
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DMP3056L-7 - Diodes Incorporated

Manufacturer Part Number
DMP3056L-7
Manufacturer
Diodes Incorporated
Allelco Part Number
32D-DMP3056L-7
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
285,290 pcs available, New & Original
Parts Description
MOSFET P-CH 30V 4.3A SOT23
Package
SOT-23-3
Data sheet
DMP3056L-7.pdf

Datasheets

DMP3056L.pdf

Environmental Information

Diodes Environmental Compliance Cert.pdf

PCN Assembly/Origin

Assembly REV 07/Sep/2021.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 285290
  • Unit Price: $0.043
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Quantity Unit Price Ext. Price
5+ $0.043 $0.22
50+ $0.034 $1.70
150+ $0.03 $4.50
500+ $0.027 $13.50
3000+ $0.024 $72.00
6000+ $0.023 $138.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

DMP3056L-7 Tech Specifications
Diodes Incorporated - DMP3056L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - DMP3056L-7

Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Vgs(th) (Max) @ Id 2.1V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3
Series -
Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 10V
Power Dissipation (Max) 1.38W (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Base Product Number DMP3056

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

DMP3056L-7 Image
DMP3056L-7 (1)

Manufacturer Part Number

DMP3056L-7

Manufacturer

Diodes Incorporated

Introduction

The DMP3056L-7 is a P-channel MOSFET transistor from Diodes Incorporated. It is designed for use in a variety of electronic circuits and applications.

Product Features and Performance

P-channel MOSFET transistor

Drain to Source Voltage (Vdss) of 30V

Maximum Gate-Source Voltage (Vgs) of ±25V

On-Resistance (Rds(on)) of 50mOhm at 6A, 10V

Continuous Drain Current (Id) of 4.3A at 25°C

Input Capacitance (Ciss) of 642pF at 25V

Power Dissipation (Max) of 1.38W at 25°C

Gate Charge (Qg) of 11.8nC at 10V

Product Advantages

Low on-resistance for efficient power handling

Wide operating voltage range

High current capability

Compact surface mount package

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Threshold Voltage (Vgs(th)): 2.1V at 250μA

Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Package: SOT-23-3

Application Areas

Suitable for use in a variety of electronic circuits and applications, such as power supplies, motor controls, and switch mode power supplies.

Product Lifecycle

The DMP3056L-7 is an active product and is not nearing discontinuation.

Replacement or upgrade options are available from Diodes Incorporated.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high current capability

Compact surface mount package

Wide operating voltage range

Compatibility with standard manufacturing processes

Availability of replacement or upgrade options from the manufacturer

Frequently Asked Questions(FAQ)

How does the DMP3056L-7 perform in terms of on-resistance when driven with a 4.5V gate-source voltage, and what are the implications for power efficiency in low-voltage switching applications?
At a gate-source voltage of 4.5V, the DMP3056L-7 exhibits an Rds(on) of approximately 95 mΩ, which is derived from typical extrapolation of datasheet curves given that this falls between the specified test points at 4.5V and 10V. This relatively moderate on-resistance implies higher conduction losses compared to devices optimized for logic-level drive, making it less ideal for ultra-low-voltage systems where minimizing I²R losses is critical. However, it still offers acceptable efficiency in moderate-current applications such as battery management circuits or load switches where 4.5V drive is standard.
In comparison to other P-channel MOSFETs in the same SOT-23 package, how does the DMP3056L-7 balance threshold voltage, gate charge, and Rds(on), particularly when targeting high-frequency switching in space-constrained designs?
The DMP3056L-7 features a maximum threshold voltage (Vgs(th)) of 2.1V at 250µA, which enables reliable turn-on with 3.3V logic levels—a key advantage over some older generation parts requiring 4.5–5V gate drive. While its gate charge (Qg = 11.8 nC at Vgs=10V) is modest, it trails slightly behind newer trench-type competitors in the same footprint, resulting in marginally higher switching losses at high frequencies. Nevertheless, the combination of low Rds(on) and moderate Qg provides a favorable trade-off for applications like USB-powered load switches or Li-ion protection circuits where both area and dynamic performance matter.
What are the thermal limitations of the DMP3056L-7 when used in continuous drain current applications without heatsinking, and how does junction-to-ambient thermal resistance affect long-term reliability?
Under free-air convection (no heatsink), the device dissipates up to 1.38W continuously with a junction-to-ambient thermal resistance (θJA) typically around 120°C/W. At a sustained drain current of 4.3A with Rds(on) ≈ 50mΩ and Vds ≈ 1V during conduction, power dissipation reaches ~0.215W, leading to a junction temperature rise of roughly 26°C above ambient—acceptable for most environments but approaching limits if airflow is restricted. Prolonged operation near 150°C junction temperature accelerates degradation; thus, derating above 3A or 2W is advised for robust designs.
Can the DMP3056L-7 be safely used in automotive-grade reverse-polarity protection circuits, considering its operating temperature range and transient robustness?
Yes, the DMP3056L-7 supports operation from -55°C to +150°C (junction), making it suitable for extended industrial and even some automotive boundary conditions. However, it lacks specific AEC-Q101 qualification, so while functional in non-certified automotive edge cases, full compliance with OEM reliability standards would require formal validation. Its ±25V gate-source rating also helps tolerate brief transients common in harsh environments, though snubbing networks may still be necessary under fault conditions.
How does input capacitance (Ciss) impact high-speed switching behavior in the DMP3056L-7, and what driver considerations are needed to avoid excessive rise/fall times?
With Ciss(max) = 642 pF at Vds = 25V, the DMP3056L-7 exhibits moderate input capacitance that can slow down gate charging unless paired with an adequate gate driver. For example, using a 10mA source/sink driver yields a rise time of roughly τ = Ciss × ΔV / I = 642pF × 3.3V / 10mA ≈ 0.21 µs—potentially problematic in kHz-range PWM applications. Therefore, applications demanding fast transitions should use drivers capable of sourcing >50mA to maintain sub-microsecond switching and minimize dead-time losses.
When comparing the DMP3056L-7 to similar P-MOSFETs from Infineon or Vishay, which device offers better figure-of-merit (FOM = Rds(on) × Qg) for high-efficiency DC-DC converters?
While direct cross-references vary by packaging, many newer trench MOSFETs in equivalent SOT-23 packages achieve FOM values below 1.0 mΩ·nC. The DMP3056L-7’s FOM at 10V gate drive is approximately 5.9 mΩ·nC (using Rds(on)=50mΩ, Qg=11.8nC), which lags behind cutting-edge alternatives optimized for synchronous rectification. Thus, for buck-boost converters operating above 500kHz, a device with lower FOM would reduce switching losses more effectively, though the DMP3056L-7 remains viable at lower switching frequencies (<100kHz).
Is the DMP3056L-7 suitable for use in battery-backed SRAM hold-up circuits requiring minimal leakage during standby, and why or why not?
No, because the DMP3056L-7 lacks ultra-low off-state leakage specification data in standard datasheets; typical P-channel MOSFETs in this class exhibit sub-1µA leakage only under tight bias conditions, often insufficient for nanoamp-level SRAM retention. Additionally, its relatively high gate threshold (up to 2.1V) means partial conduction can occur near battery cutoff voltages, risking premature discharge. For such applications, specialized low-leakage MOSFETs or dedicated backup ICs are preferred.
How should the DMP3056L-7 be handled during PCB assembly, and what precautions mitigate ESD risk given its SOT-23-3 construction?
As an MSL 1 component, the DMP3056L-7 can be stored indefinitely at ambient conditions before reflow, but must be handled in ESD-protected environments due to the sensitivity of small-gate MOSFETs. Standard JEDEC ESD Class 1B applies, meaning HBM < 100V and CDM < 250V. Proper grounding, wrist straps, and conductive trays are recommended. During soldering, peak temperatures should not exceed 260°C for 10 seconds max to avoid die stress, especially important given the thin metallization in SOT-23 packages.
Can the DMP3056L-7 operate reliably in hot-swap applications involving capacitive loads, and what gate control strategy prevents inrush current overshoot?
Yes, but only with proper gate control. Without active gate driving, the MOSFET turns on slowly due to Ciss charging through the gate resistor, limiting inrush current. However, the 11.8nC gate charge requires careful selection of gate resistor (e.g., 10Ω–100Ω) to balance turn-on speed and EMI. For true hot-swap control, external controllers with soft-start functionality are preferable. The DMP3056L-7 itself lacks integrated current limiting, so reliance on external circuitry is mandatory to protect downstream components during live insertion.
What is the significance of the DMP3056L-7’s body diode characteristics, and how might they influence circuit design in bidirectional power paths?
Although primarily intended as a unidirectional switch, the parasitic body diode conducts during reverse-bias conditions. In P-channel configurations, this allows current flow from source to drain when Vds is negative, which can unintentionally bypass load isolation. For bidirectional applications, paralleling an external Schottky diode is advisable to clamp reverse current and prevent unintended conduction, especially in redundant power systems or backfeed scenarios where voltage polarity could momentarily invert.
How does package parasitics in the SOT-23-3 affect high-frequency performance, and why might inductance limit use in GHz-range RF applications despite the DMP3056L-7 being a power device?
The SOT-23-3 package introduces lead and bond-wire inductances typically in the 1–3 nH range, causing impedance spikes near 500 MHz to 1 GHz. Combined with Ciss = 642 pF, this forms a resonant tank that creates peaking in frequency response. While the DMP3056L-7 isn’t designed for RF use, these parasitics can cause instability in feedback loops or resonant converters operating above 200 MHz. Thus, even in switching regulators, layout minimization of loop areas remains critical to avoid unintended oscillations.
Are there any known application notes or reference designs featuring the DMP3056L-7, and how do they inform real-world implementation best practices?
Diodes Incorporated provides limited public reference designs, but typical implementations include battery cutoff circuits, load disconnect switches, and level-shifting stages. Best practices emphasize Kelvin-source connections to avoid gate threshold shifts, placing gate resistors close to the pin, and ensuring adequate copper pour for thermal relief. Community forums and third-party sites occasionally feature evaluation boards using the DMP3056L-7, highlighting the importance of decoupling capacitors near the drain-source terminals to suppress voltage spikes during inductive load switching.
How does the DMP3056L-7 compare to N-channel alternatives in synchronous converter topologies, particularly regarding gate drive complexity and efficiency?
In synchronous buck converters, N-channel MOSFETs generally outperform P-channel counterparts due to lower Rds(on) and superior gate drive efficiency. The DMP3056L-7 cannot replace N-channels in synchronous rectification roles because it lacks the required low-side gate drive architecture. Instead, it serves as a high-side switch only when a floating drive is feasible—such as in half-bridge configurations with isolated gate drivers. Thus, for most synchronous designs, N-channel parts remain dominant, relegating the DMP3056L-7 to simpler non-isolated switching roles.
What role does the base product number (DMP3056) play in supply chain planning, and how does it relate to derivative variants like the DMP3056L-7?
The DMP3056 base family includes multiple suffixes denoting packaging (e.g., DMP3056L-7 for SOT-23-3 reel/cut tape), temperature grades, and sometimes process revisions. Tracking the base number aids in obsolescence planning and ensures compatibility across production batches. Suppliers use this hierarchy for inventory management and end-of-life notifications, so engineers referencing DMP3056L-7 should verify all parameters against the latest datasheet rather than assuming uniformity across suffixes, especially for newer process nodes.
Given its RoHS 3 and REACH compliance status, what documentation must be included when exporting the DMP3056L-7 to meet international regulatory requirements?
Exporters must provide a Declaration of Conformity (DoC) confirming RoHS 3 compliance per Directive 2011/65/EU, including exemption status if applicable. Since the part is marked as “REACH Unaffected,” no SVHC (Substance of Very High Concern) declaration beyond the general SCIP database entry may be required. Additionally, the ECCN EAR99 classification simplifies export controls, but HTSUS 8541.29.0095 must be cited in customs filings to ensure correct tariff treatment in target markets.
How does moisture sensitivity level (MSL) 1 affect storage logistics for bulk quantities of DMP3056L-7, and what shelf-life considerations apply before PCB assembly?
MSL 1 indicates unlimited floor life at ≤30°C and ≤60% RH, provided sealed packaging remains intact. Once opened, the components should be assembled within 168 hours (7 days) under dry ambient conditions to prevent condensation during reflow. For long-term storage, desiccant packs and humidity indicator cards are recommended. Failure to adhere to this timeline risks delamination or popcorning during thermal cycling, particularly in lead-free solder profiles exceeding 245°C peak.
Can the DMP3056L-7 be used in parallel for increased current sharing in high-density power modules, and what challenges arise from parameter mismatches?
Paralleling is possible but not recommended without individual gate resistors and careful layout symmetry. Even minor variations in Rds(on) or Vth between devices cause current imbalance—for instance, a 10% difference in Rds(on) at 4A leads to one device handling ~4.2A versus 3.8A in the other, increasing stress on the weaker unit. Thermal coupling helps somewhat, but without active balancing, derating to 70% of rated current (≈3A total) is prudent to ensure reliability in shared-load scenarios.
What diagnostic techniques help verify correct operation of the DMP3056L-7 in-field, especially when troubleshooting unexpected shutdowns in embedded systems?
Oscilloscope measurements of gate-source waveform integrity reveal whether the drive voltage reaches sufficient levels (>4V for full Rds(on)). Simultaneously monitoring drain-source voltage drop under load isolates conduction issues, while thermal imaging identifies localized heating indicative of Rds(on) drift or poor solder joints. Logic analyzers can confirm enable signal timing relative to power rail ramping. These methods collectively distinguish between drive-circuit faults, layout problems, or component degradation in deployed systems using the DMP3056L-7.

Parts with Similar Specifications

The three parts on the right have similar specifications to Diodes Incorporated DMP3056L-7

Product Attribute DMP3056LDM-7 DMP3056LDMQ-7 DMP3050LVTQ-7 DMP3050LVT-7
Part Number DMP3056LDM-7 DMP3056LDMQ-7 DMP3050LVTQ-7 DMP3050LVT-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
FET Type - - - -
Vgs(th) (Max) @ Id - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Vgs (Max) - - - -
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Drain to Source Voltage (Vdss) - - - -
Rds On (Max) @ Id, Vgs - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
FET Feature - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Power Dissipation (Max) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Technology - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Drive Voltage (Max Rds On, Min Rds On) - - - -

DMP3056L-7 Datasheet PDF

Download DMP3056L-7 pdf datasheets and Diodes Incorporated documentation for DMP3056L-7 - Diodes Incorporated.

Datasheets
DMP3056L.pdf
Environmental Information
Diodes Environmental Compliance Cert.pdf
PCN Assembly/Origin
Assembly REV 07/Sep/2021.pdf

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    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
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  • Leat***O'Keefe
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    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
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    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
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    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
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  • Embe***dMotion
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    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

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DMP3056L-7 Image

DMP3056L-7

Diodes Incorporated
32D-DMP3056L-7

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