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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - ArraysDMP3056LSD-13
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DMP3056LSD-13 - Diodes Incorporated

Manufacturer Part Number
DMP3056LSD-13
Manufacturer
Diodes Incorporated
Allelco Part Number
32D-DMP3056LSD-13
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
169,540 pcs available, New & Original
Parts Description
MOSFET 2P-CH 30V 6.9A 8-SOIC
Package
8-SO
Data sheet
DMP3056LSD-13.pdf

Datasheets

DMP3056LSD.pdf

Environmental Information

Diodes Environmental Compliance Cert.pdf

PCN Design/Specification

Bond Wire 11/Nov/2011.pdf

PCN Assembly/Origin

Wafer Source 28/Oct/2022.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 169540
  • Unit Price: $0.162
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
5+ $0.162 $0.81
50+ $0.132 $6.60
150+ $0.119 $17.85
500+ $0.103 $51.50
2500+ $0.096 $240.00
5000+ $0.091 $455.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

DMP3056LSD-13 Tech Specifications
Diodes Incorporated - DMP3056LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - DMP3056LSD-13

Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Vgs(th) (Max) @ Id 2.1V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series -
Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V
Power - Max 2.5W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 722pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13.7nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A
Configuration 2 P-Channel (Dual)
Base Product Number DMP3056

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

Manufacturer Part Number

DMP3056LSD-13

Manufacturer

Diodes Incorporated

Introduction

Dual P-channel MOSFET transistor array in a compact 8-SOIC surface mount package

Product Features and Performance

30V drain-to-source voltage

9A continuous drain current at 25°C

45mΩ maximum on-resistance at 6A, 10V

722pF maximum input capacitance at 25V

7nC maximum gate charge at 10V

Logic-level gate with 2.1V maximum threshold voltage at 250μA

Product Advantages

Compact surface mount package

Dual configuration for space-saving design

High current and low on-resistance for efficient power switching

Logic-level gate for easy microcontroller interfacing

Key Technical Parameters

Drain-to-source voltage: 30V

On-resistance: 45mΩ max

Drain current: 6.9A continuous at 25°C

Input capacitance: 722pF max

Gate charge: 13.7nC max

Gate threshold voltage: 2.1V max

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with a wide range of electronic devices and systems

Application Areas

Power management

Motor control

Battery charging and discharging

Switching circuits

Amplifier circuits

Product Lifecycle

Current product, no discontinuation or replacement plans

Several Key Reasons to Choose This Product

Compact surface mount package for space-saving design

Dual configuration for efficient use of board space

High current and low on-resistance for efficient power switching

Logic-level gate for easy microcontroller interfacing

Wide operating temperature range for reliability in various environments

RoHS3 compliance for environmentally friendly use

Frequently Asked Questions(FAQ)

How does the DMP3056LSD-13 compare to single-channel P-Channel MOSFETs in terms of power efficiency and thermal performance when used in high-side switching applications?
The DMP3056LSD-13 integrates two independent P-Channel MOSFETs in a single 8-SOIC package, offering a compact solution for dual-switching designs. With an Rds(on) of 45mΩ at Vgs = 10V and Id = 6A, it achieves lower conduction losses compared to discrete implementations using two separate single-channel devices. In high-side configurations, this parallel integration reduces overall footprint and parasitic inductance, improving thermal coupling between channels. When both FETs share a heatsink or operate under balanced current distribution, the combined power dissipation (2.5W total) allows more efficient heat spreading than isolated single-channel alternatives. However, thermal crosstalk may require careful PCB layout to avoid localized hotspots. For applications like battery protection or load switches requiring synchronized control, this dual configuration enhances system reliability without sacrificing per-device efficiency.
What design considerations are necessary when selecting pull-up resistors for the gate drivers of the DMP3056LSD-13 to ensure fast turn-on while minimizing shoot-through risk?
The DMP3056LSD-13 features logic-level gate thresholds with Vgs(th) max of 2.1V @ 250µA, enabling direct drive from 3.3V or 5V logic. To achieve fast turn-on, low-value gate resistors (typically 1–10Ω) should be used to limit RC time constant with input capacitance (Ciss = 722pF). However, excessive slew rates can cause ringing or unintended turn-on due to Miller plateau effects during switching transitions. A balance must be struck: too low a resistance risks EMI and stress on gate driver output stages; too high slows transition and increases switching losses. Additionally, in bridge topologies, complementary timing between upper and lower FETs is critical to prevent shoot-through. Using dedicated gate driver ICs with active Miller clamping or adaptive dead-time control further mitigates risks associated with parasitic capacitances and threshold variations across temperature.
Can the DMP3056LSD-13 be safely operated near its maximum junction temperature of 150°C in continuous conduction mode, and what derating practices are recommended?
While the DMP3056LSD-13 is rated up to TJ = 150°C, continuous operation near this limit requires precise thermal management. At full load (Id = 6.9A) and ambient temperatures above 85°C, the Rds(on) increases slightly due to negative temperature coefficient, leading to higher power dissipation. Given the total power rating of 2.5W, even modest increases in Rds(on) can push thermal resistance requirements beyond typical PCB copper area capabilities. Designers should apply conservative derating—limiting continuous drain current to ≤60% of 6.9A under elevated ambient conditions—and verify junction temperature using thermal modeling or empirical testing. Thermal vias under the exposed pad (if present) and adequate airflow are essential. For automotive or industrial environments with wide temperature swings, operating below 130°C is advisable to maintain margin against solder joint fatigue and parameter drift.
How does the gate charge (Qg = 13.7nC @ 10V) of the DMP3056LSD-13 influence switching frequency capability in PWM-based DC-DC converters, and what driver current implications does this entail?
The gate charge of 13.7nC indicates moderate capacitive loading for a 30V P-Channel device, limiting how quickly the gate voltage can ramp during turn-on/off. In a buck converter switching at 500kHz, for example, each cycle allows only ~2μs for charging/discharging the gate through a series resistor. Assuming a 5Ω gate resistor and 12V drive voltage, the peak current required is I = Qg / (ton + toff), which may approach 1–2A pulses. Standard microcontrollers or logic gates cannot source sufficient current directly, necessitating external gate drivers. Without such drivers, increased propagation delay and reduced efficiency occur due to slow transitions. Therefore, the DMP3056LSD-13 is better suited for frequencies <200kHz unless paired with dedicated drivers capable of sourcing >3A peak current to fully exploit its low Rds(on) benefits.
What trade-offs exist between using the DMP3056LSD-13 versus N-Channel MOSFETs in synchronous buck converter topologies, particularly regarding gate drive complexity and efficiency?
Synchronous buck converters typically use N-Channel MOSFETs as both high-side and low-side switches because they offer lower Rds(on) for the same die size and simpler gate drive requirements. Replacing one or both N-Channel devices with P-Channel alternatives like the DMP3056LSD-13 introduces higher on-resistance and necessitates level-shifting circuitry or bootstrap techniques for high-side driving. The DMP3056LSD-13’s 45mΩ Rds(on) is competitive but still exceeds many modern N-Channel counterparts (<10mΩ common). Thus, while the dual P-Channel architecture simplifies layout in certain configurations (e.g., dual-source switching), it often results in higher conduction losses and reduced efficiency at light loads. Only in applications where N-Channel availability or cost is prohibitive might the DMP3056LSD-13 serve as a compromise, provided gate drive isolation and timing margins are carefully managed.
Is it feasible to parallel multiple DMP3056LSD-13 devices to share current in high-power applications, and what challenges arise from their internal structure?
Paralleling DMP3056LSD-13 devices is possible but not recommended without additional balancing components. Although MOSFETs exhibit positive temperature coefficient of Rds(on) with current (helping natural current sharing), slight mismatches in threshold voltage (Vgs(th) max 2.1V) and transconductance can lead to uneven current distribution, especially under dynamic conditions. The integrated body diodes also have forward voltage differences that exacerbate imbalance during transient events. Moreover, the shared package parasitics (inductance, capacitance) couple noise between channels, potentially causing instability or latch-up if not decoupled with individual gate resistors and layout symmetry. If paralleling is unavoidable, active current-sharing ICs or matched external gate biasing networks should be employed, along with thorough thermal profiling to ensure no single device exceeds safe operating limits.
How does the Moisture Sensitivity Level (MSL = 1) affect storage and handling procedures for bulk quantities of DMP3056LSD-13 in tape-and-reel packaging?
MSL = 1 indicates unlimited shelf life under normal dry conditions, meaning the DMP3056LSD-13 does not require bake-out before reflow soldering, even after extended storage. This simplifies logistics for distributors and OEMs handling large reel quantities. However, "normal dry conditions" imply relative humidity <60% and temperature <30°C. Prolonged exposure to humid environments (>85% RH) can still induce moisture ingress over months, necessitating desiccant storage or periodic baking if reels remain unsealed. During assembly, standard IPC/JEDEC guidelines apply: no special handling beyond typical SMT processes. Since the component uses lead-free soldering profiles compliant with RoHS3, compatibility with industry-standard reflow profiles (e.g., peak 245°C) is ensured without additional precautions beyond those for other surface-mount devices.
What role does input capacitance (Ciss = 722pF @ 25V) play in EMC performance when using the DMP3056LSD-13 in digital switching circuits?
The Ciss of 722pF contributes significantly to high-frequency noise generation in switching circuits due to rapid charge/discharge cycles. When driven by a fast-edge signal (e.g., 5V/10ns rise time), the instantaneous displacement current into the gate creates conducted emissions above 10MHz, especially problematic in Class B EMC regulations. Although Ciss includes Cgd and Cgs, the dominant contribution comes from Cgd interacting with Miller effect during turn-off, prolonging transition times and increasing dv/dt stress. Proper decoupling with close-proximity bypass capacitors near the source terminal helps mitigate ground bounce, while series gate resistors (as low as 1Ω for speed, up to 22Ω for damping) reduce spectral energy in the 30–100MHz range. Layout minimization of loop areas and star grounding further suppress radiated emissions associated with the DMP3056LSD-13’s switching activity.
How should PCB trace width and thermal via placement be optimized around the DMP3056LSD-13 to manage 6.9A continuous current without exceeding package limitations?
Supporting 6.9A continuously demands careful attention to current-carrying capacity and thermal paths. For 1oz copper PCBs, traces must be at least 12mm wide to stay within 10°C temperature rise, but this is impractical in most designs. Instead, utilize multiple layers with solid ground planes as heat spreaders. Place thermal vias directly beneath the exposed pad (if applicable) and connect them to inner-layer copper pours. Aim for ≥8 vias per square inch with diameter ≥0.3mm, spaced evenly to minimize impedance. The 8-SOIC package’s 3.9mm width allows symmetric routing, so Kelvin connections from source pins to local ground planes reduce inductive losses. Simulate with tools like Ansys SIwave or similar to validate IR drop and thermal gradients, ensuring junction temperature remains below 120°C under worst-case ambient and load conditions.
What are the implications of the DMP3056LSD-13’s configuration being dual P-Channel rather than single P-Channel or N-Channel in battery-backed backup systems?
In battery-backed backup systems, dual P-Channel topology enables true OR-ing functionality where two power sources (e.g., primary supply and backup battery) can connect simultaneously without backfeeding. The DMP3056LSD-13’s internal anti-parallel body diodes provide inherent reverse-current blocking, simplifying control logic compared to external Schottky solutions. However, both channels must be controlled synchronously to avoid contention during source transitions. The low Vgs(th) ensures reliable activation from weak backup supplies down to 2.5V, enhancing system robustness. Yet, the absence of integrated drivers means external MCU or comparator circuits are needed for sequencing. Compared to N-Channel solutions requiring charge pumps, the DMP3056LSD-13 reduces BOM count and board space, though at the cost of higher Rds(on) and potential efficiency loss during long-term standby operation.
How does the base product number DMP3056 relate to the specific variant DMP3056LSD-13, and what engineering decisions might justify choosing the LSD suffix?
The base model DMP3056 represents a family of dual P-Channel MOSFETs, with suffixes indicating packaging, voltage rating, or performance grades. The "LSD" in DMP3056LSD-13 specifies an 8-SOIC package (SO) with lead finish (L = Lead-free), and likely denotes a specific threshold voltage or Rds(on) binning optimized for logic-level applications. Choosing this variant implies a preference for RoHS3 compliance (via lead-free) and compatibility with automated pick-and-place systems using tape-and-reel (TR) feeders. Engineers select this part when space-constrained designs benefit from pre-binned devices with consistent gate drive characteristics, reducing qualification effort. The "S" may indicate a screened version with tightened parametric tolerances, useful in safety-critical or high-reliability contexts where statistical variation in Vgs(th) could impact fault detection margins.
What precautions should be taken during functional testing of circuits using the DMP3056LSD-13 to avoid damaging the device from electrostatic discharge or transient overvoltage?
The DMP3056LSD-13, like all MOSFETs, has limited ESD tolerance—typically ±2kV HBM—so standard anti-static protocols are mandatory during probing and handling. Use grounded wrist straps, conductive mats, and ESD-safe workstations. Avoid touching pins during insertion into test fixtures. For overvoltage protection, ensure input voltages never exceed Vdss = 30V, and add TVS diodes if inductive loads are driven. Gate-source voltage must stay within ±20V absolute maximum, so clamp unused gates or use Zener diodes if floating potentials arise. During bench testing with oscilloscopes, probe tips should have low-inductance grounds to prevent ringing-induced gate overshoot. Power sequencing must respect data sheet recommendations to prevent latch-up from simultaneous high Vds and Vgs application.
How does the operating temperature range (-55°C to 150°C TJ) affect Rds(on) and gate threshold voltage in real-world automotive vs. industrial applications?
Across -55°C to 150°C, the DMP3056LSD-13 exhibits predictable semiconductor behavior: Rds(on) decreases slightly with rising temperature (negative TC), aiding thermal stability in parallel configurations, while Vgs(th) drops by approximately 2mV/°C, lowering gate drive requirements at cold temperatures. In automotive environments (-40°C to +125°C), this means easier turn-on at startup and reduced conduction losses in winter. However, at elevated temperatures (near 150°C), mobility degradation slightly offsets Rds(on) improvements. Industrial systems operating at sustained high temps may see increased leakage currents, though negligible here due to small die size. Designers should account for Vgs(th) shift when interfacing with fixed-voltage logic levels; a 5V system at -55°C may effectively apply 5.3V to the gate, accelerating turn-on but increasing risk of overshoot without proper damping.
What advantages does the 8-SOIC package offer for high-density PCB layouts when integrating the DMP3056LSD-13 alongside other analog and digital ICs?
The 8-SOIC (3.9mm width) provides a compact footprint ideal for space-constrained designs such as IoT edge nodes or portable medical devices. Its surface-mount form factor aligns with standard pick-and-place lines, reducing assembly costs. The dual-channel integration eliminates the need for two separate SOIC footprints, saving ~25% board real estate compared to discrete single-FET solutions. Additionally, shared thermal mass between channels improves heat distribution under partial-load conditions. When stacked vertically with adjacent ICs, the narrow profile minimizes height profile, enabling slim form factors. However, designers must ensure adequate creepage distance between adjacent high-voltage nodes to meet safety standards like IEC 60601 or UL 60950, leveraging the 1.27mm pitch for easy isolation routing.
Why might a designer choose the DMP3056LSD-13 over alternative dual MOSFETs with lower Rds(on) despite its relatively modest 45mΩ value?
While newer MOSFETs boast sub-20mΩ Rds(on), the DMP3056LSD-13 offers compelling value in mid-power applications where cost, availability, and simplicity outweigh marginal efficiency gains. Its logic-level drive capability enables direct connection to 3.3V controllers without level shifters, reducing BOM count. The 8-SOIC package simplifies layout in mixed-signal boards where N-Channel dominance complicates routing. Furthermore, the device’s proven reliability in legacy designs and extensive distributor inventory reduce supply chain risk. In systems prioritizing functional safety over peak efficiency—such as consumer electronics or non-automotive industrial gear—the trade-off favors robustness and ease of integration. Only in high-frequency (>200kHz) or high-current (>8A) scenarios would superior Rds(on) become decisive, justifying migration to next-gen parts.

Parts with Similar Specifications

The three parts on the right have similar specifications to Diodes Incorporated DMP3056LSD-13

Product Attribute DMP3056LSD-13 DMP3056LSDQ-13 DMP3056LSS-13 DMP3056LDM-7
Part Number DMP3056LSD-13 DMP3056LSDQ-13 DMP3056LSS-13 DMP3056LDM-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Gate Charge (Qg) (Max) @ Vgs 13.7nC @ 10V 13.7nC @ 4.5V 6.8 nC @ 4.5 V 21.1 nC @ 10 V
FET Feature Logic Level Gate - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 722pF @ 25V 722pF @ 25V 722 pF @ 25 V 948 pF @ 25 V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Supplier Device Package 8-SO 8-SO 8-SOP SOT-26
Drain to Source Voltage (Vdss) 30V 30V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.9A 6.9A (Ta) 7.1A (Ta) 4.3A (Ta)
Power - Max 2.5W 2.5W - -
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) - -
Base Product Number DMP3056 DMP3056 DMP3056 DMP3056
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V 45mOhm @ 6A, 10V 45mOhm @ 6A, 10V 45mOhm @ 5A, 10V
Series - Automotive, AEC-Q101 - -
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) SOT-23-6
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount

DMP3056LSD-13 Datasheet PDF

Download DMP3056LSD-13 pdf datasheets and Diodes Incorporated documentation for DMP3056LSD-13 - Diodes Incorporated.

Datasheets
DMP3056LSD.pdf
Environmental Information
Diodes Environmental Compliance Cert.pdf
PCN Design/Specification
Bond Wire 11/Nov/2011.pdf
PCN Assembly/Origin
Wafer Source 28/Oct/2022.pdf
PCN Other
Multiple Device Changes 29/Apr/2013.pdf

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Diodes Incorporated

DMP3056LSD-13

Diodes Incorporated
32D-DMP3056LSD-13

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