Manufacturer Part Number
FQD12P10TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel MOSFET transistor suitable for a wide range of power management and switching applications.
Product Features and Performance
100V drain-to-source voltage rating
Low on-resistance of 290 mΩ
High continuous drain current of 9.4A
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 27 nC
Robust design with high power dissipation of 2.5W (Ta) and 50W (Tc)
Product Advantages
Excellent power efficiency due to low on-resistance
High temperature and power handling capabilities
Reliable performance in demanding applications
Compact and easy-to-use surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 290 mΩ
Continuous Drain Current (Id): 9.4A
Input Capacitance (Ciss): 800 pF
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Suitable for harsh environments
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range and high power handling
Reliable and robust design for demanding applications
Compact and easy-to-use surface mount package
Compatibility with a wide range of power management and switching applications
FQD13N062Fairchild (onsemi)
FQD12P10TM-F085ONsemi