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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleNDP4060
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NDP4060 - Fairchild Semiconductor

Manufacturer Part Number
NDP4060
Manufacturer
Fairchild (onsemi)
Allelco Part Number
32D-NDP4060
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
63,820 pcs available, New & Original
Parts Description
MOSFET N-CH 60V 15A TO220-3
Package
TO-220-3
Data sheet
-
RoHs Status
ROHS3 Compliant
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In stock: 63820

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Specifications

NDP4060 Tech Specifications
Fairchild Semiconductor - NDP4060 technical specifications, attributes, parameters and parts with similar specifications to Fairchild Semiconductor - NDP4060

Product Attribute Attribute Value
Manufacturer Fairchild (onsemi)
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3
Series -
Rds On (Max) @ Id, Vgs 100mOhm @ 7.5A, 10V
Power Dissipation (Max) 50W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
ECCN EAR99

Frequently Asked Questions(FAQ)

What is the typical gate-source threshold voltage (Vgs(th)) for the NDP4060 MOSFET when conducting a drain current of 250µA, and how does this affect switching behavior in low-voltage applications?
The NDP4060 exhibits a maximum Vgs(th) of 4V at Id = 250µA, indicating that sufficient gate drive must exceed this level to ensure fully enhanced channel formation. This characteristic enables reliable turn-on with standard logic-level drivers in many 5V systems, though optimal performance requires Vgs ≥ 10V to achieve the specified Rds(on) of 100mΩ. Operating near the threshold may result in increased conduction losses due to higher effective Rds(on), particularly noticeable in high-current or thermally constrained designs.
How does the gate charge (Qg) of 17 nC at Vgs = 10V influence the switching speed and gate driver requirements for the NDP4060 in PWM applications above 100 kHz?
With a total gate charge of 17 nC, the NDP4060 demands approximately 34 µs to switch assuming a 2 A gate current capability—resulting in rise/fall times on the order of several microseconds. At switching frequencies exceeding 100 kHz, this introduces significant dead-time margins and power loss in the gate driver itself. Designers should select a driver capable of sourcing ≥2 A peak current and consider minimizing parasitic inductance in the gate loop to prevent ringing and overshoot.
In what scenarios would the maximum continuous drain current of 15A (Tc) become insufficient despite adequate thermal management using a TO-220 package?
While the NDP4060 can handle 15A at Tc under ideal heat-sinking conditions, real-world applications often involve transient loads or non-uniform current distribution. For pulsed operation with duty cycles <50%, peak currents up to ~25A may be acceptable depending on pulse duration and thermal impedance. However, sustained operation above 12A without forced airflow risks junction temperature exceeding 175°C, especially if PCB copper area is limited or ambient temperature exceeds 50°C.
Compare the conduction losses between the NDP4060 and a similar N-channel MOSFET rated for 80V and 20A with an Rds(on) of 50mΩ when conducting 10A at Vgs = 10V.
At 10A and Vgs = 10V, the NDP4060 dissipates P_cond = I² × Rds(on) = (10)² × 0.1 Ω = 10W, whereas the hypothetical 80V/20A device at 50mΩ would dissipate only 5W under identical conditions. Thus, the lower Rds(on) device offers half the conduction loss, which significantly reduces junction temperature rise and improves efficiency—particularly beneficial in high-frequency buck converters where switching and conduction losses are both critical.
What input capacitance (Ciss) value characterizes the NDP4060 at Vds = 25V, and how does it impact high-frequency noise immunity in analog front-end circuits?
The NDP4060 has a Ciss of 450 pF at Vds = 25V, forming a low-pass filter with the gate resistance and source impedance. In switching regulators operating above 500 kHz, this capacitance combined with typical 1–10 Ω gate resistance yields a cutoff frequency below 1 MHz, potentially attenuating fast edges but also filtering out high-frequency noise. Careful layout is required to avoid unintended Miller plateau effects during turn-off transients.
Given the power dissipation limit of 50W (Tc) and thermal resistance junction-to-case (RθJC) implied by the TO-220 package, what heatsink requirement ensures TJ remains below 125°C during continuous 10A operation?
Assuming RθJC ≈ 0.5°C/W and RθCS (case-to-sink) ≈ 0.5°C/W, then RθJA = RθJC + RθCS + RθSA. To maintain TJ = TA + PD × RθJA ≤ 125°C at TA = 40°C and PD = 10W, we require RθJA ≤ (125 - 40)/10 = 8.5°C/W. Thus, a heatsink with RθSA ≤ 7.5°C/W (after accounting for interface materials) is necessary—achievable with aluminum extrusions and thermal grease.
Is the NDP4060 suitable for synchronous rectification in a 48V-to-12V buck converter operating at 150 kHz with continuous output currents around 12A?
The NDP4060’s 60V rating provides adequate margin over 48V input, and its low Rds(on) minimizes conduction losses. However, at 12A average current, conduction loss alone reaches ~1.44W, requiring efficient thermal design. Its 17 nC gate charge also necessitates a capable gate driver to manage switching losses at 150 kHz. While feasible, a device with lower Qg and Rds(on) might yield better overall efficiency—making the NDP4060 acceptable but not optimal for this application.
How does the obsolete status of the NDP4060 affect long-term design planning, and what alternatives should be considered for new industrial control systems?
As an obsolete part from Fairchild Semiconductor, the NDP4060 poses supply chain risk for production systems with >5-year lifecycles. Engineers should migrate to active replacements such as ON Semiconductor’s NVTFS5015NTXG or Infineon’s IPA60R099CFD7—both offering comparable voltage, current, and package while maintaining RoHS compliance and availability through major distributors. Transition plans should include parametric comparison focusing on Rds(on), Qg, and thermal performance under actual operating profiles.
What is the significance of the ±20V Vgs(max) specification for the NDP4060, and how can overvoltage on the gate lead be prevented in automotive environments?
The ±20V gate-source rating protects against electrostatic discharge (ESD) and transient overvoltages common in automotive systems. Exceeding +20V permanently damages the gate oxide; thus, clamping circuits using Zener diodes (e.g., 15V bidirectional TVS) between gate and source are recommended. Similarly, negative spikes beyond -20V can cause latch-up or failure, so reverse polarity protection or series resistors with Schottky diodes help maintain safe Vgs levels.
When comparing the NDP4060 to a newer-generation MOSFET like the AON6403L (with Rds(on) = 2.2mΩ @ Vgs = 10V), which device offers superior performance in a 5V-driven boost converter with 20A peak current?
The AON6403L’s Rds(on) is nearly five times lower than the NDP4060’s, translating to dramatically reduced conduction losses—approximately 4W vs. 20W at 20A—even though the NDP4060 cannot sustain 20A continuously. Additionally, modern devices exhibit lower gate charge and improved body diode characteristics. Therefore, for 5V-driven high-efficiency converters, newer parts clearly outperform the legacy NDP4060 despite its functional adequacy at lower loads.
What role does the TO-220-3 package play in thermal and electrical performance for the NDP4060, and how should mounting influence PCB layout decisions?
The TO-220-3 package features three leads (source, gate, drain) with excellent thermal conductivity via metal tab attachment. Adequate copper pour beneath the tab and mechanical retention (e.g., clip or screw) are essential to minimize case-to-heatsink contact resistance. On PCBs without dedicated heatsinks, increasing Kelvin-connected copper area enhances heat spreading, but care must be taken to avoid solder bridging between pins due to the close spacing in this standard package.
Can the NDP4060 safely operate in a motor drive circuit experiencing back-EMF spikes up to 70V, given its Vdss rating of 60V?
Although the NDP4060’s Vdss is rated at 60V, inductive kick exceeding this value—such as 70V from motor windings—can cause avalanche breakdown if no protective measures exist. Without an external snubber or flyback diode, repeated exposure degrades reliability over time. Adding a TVS diode clamped at 65V across the drain-source terminals provides robust protection, allowing safe operation even during brief overvoltage events common in brushed DC motor applications.
How does the junction-to-ambient thermal resistance degrade when the NDP4060 is mounted directly to a standard FR4 PCB without additional heatsinking at 8A continuous current?
Under natural convection on FR4, RθJA typically exceeds 60°C/W for the NDP4060 due to poor thermal conductivity of epoxy laminate. At 8A and Vds = 5V, conduction loss is 32W, resulting in ΔT = 32 × 60 = 1920°C—far exceeding the 175°C maximum. This underscores that TO-220 devices require supplemental cooling unless current is limited to <2A with generous copper area and airflow.
What considerations apply when paralleling multiple NDP4060 transistors to share a load exceeding 15A, and how does gate drive symmetry affect current balancing?
Paralleling requires matching Rds(on) within tight tolerance (±5%) and symmetrical gate drive routing to ensure equal turn-on/off timing. Mismatched delays cause one device to conduct longer during switching, leading to localized heating. External gate resistors (~5–10 Ω per unit) improve dynamic balance, and Kelvin connections help stabilize threshold voltage differences. However, due to the NDP4060’s aging and batch variation, paralleling increases failure risk compared to integrated multi-cell solutions.
Why might the NDP4060 exhibit higher effective Rds(on) than datasheet values when driven by a 5V microcontroller GPIO pin instead of 10V?
The specified Rds(on) = 100mΩ assumes Vgs = 10V. At Vgs = 5V, the channel is less enhanced, increasing Rds(on) by 20–50% depending on process variation. For example, Rds(on) might rise to 130–150mΩ, raising conduction loss from 2.25W to 3.4W at 15A—significant in thermally sensitive designs. Using a gate driver IC with adjustable 10V output or adding a bootstrap capacitor ensures full enhancement regardless of MCU logic level.

Parts with Similar Specifications

The three parts on the right have similar specifications to Fairchild Semiconductor NDP4060

Product Attribute NDP4060L NDP4060 NDP4050 NDP4050L
Part Number NDP4060L NDP4060 NDP4050 NDP4050L
Manufacturer onsemi onsemi onsemi onsemi
Drive Voltage (Max Rds On, Min Rds On) - - - -
FET Type - - - -
Drain to Source Voltage (Vdss) - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Power Dissipation (Max) - - - -
Rds On (Max) @ Id, Vgs - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Series - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Vgs (Max) - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Gate Charge (Qg) (Max) @ Vgs - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Technology - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
FET Feature - - - -
Vgs(th) (Max) @ Id - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -

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Brazil 7
Europe Germany 5
United Kingdom 4
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New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
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Fairchild Semiconductor

NDP4060

Fairchild Semiconductor
32D-NDP4060

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