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HomeProductsIntegrated Circuits (ICs)Logic - Shift Registers74HCT595D,112
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74HCT595D,112 - NXP Semiconductors

Manufacturer Part Number
74HCT595D,112
Manufacturer
NXP Semiconductors
Allelco Part Number
98D-74HCT595D,112
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
29,117 pcs available, New & Original
Parts Description
NEXPERIA 74HCT595D - SERIAL IN P
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In stock: 29117
  • Unit Price: $0.098
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
5+ $0.098 $0.49
50+ $0.08 $4.00
150+ $0.072 $10.80
500+ $0.062 $31.00
2500+ $0.057 $142.50
5000+ $0.055 $275.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

74HCT595D,112 Tech Specifications
NXP Semiconductors - 74HCT595D,112 technical specifications, attributes, parameters and parts with similar specifications to NXP Semiconductors - 74HCT595D,112

Product Attribute Attribute Value
Manufacturer NXP Semiconductors
Series *
Product Attribute Attribute Value
Package Bulk
Base Product Number 74HCT595

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Frequently Asked Questions(FAQ)

How does the 74HCT595D,112 handle output enable timing when transitioning from high-impedance to active states during dynamic load switching?
The 74HCT595D,112 implements a deterministic output control sequence via its OE (output enable) pin, which is active-low. When OE transitions from asserted (low) to deasserted (high), the tri-state outputs enter a high-impedance state with propagation delay typically under 25 ns at 5V supply and 25°C. Conversely, asserting OE allows data from the shift register to appear on the outputs after an additional setup time relative to the clock edge. This behavior ensures predictable bus contention avoidance in shared bus architectures, especially when multiple devices drive parallel lines. Designers must ensure OE deassertion precedes any new data capture to prevent glitches, particularly in systems where signal integrity is critical.
What are the key differences between the 74HCT595D,112 and a standard 74LS595 in terms of voltage compatibility and noise margin performance?
The 74HCT595D,112 uses CMOS technology optimized for TTL logic levels, providing input thresholds compatible with 5V TTL signals while operating from 4.5V to 5.5V. In contrast, the 74LS595 operates at lower supply voltages (typically 5V) but has narrower noise margins due to higher input current requirements and less robust ESD protection. Specifically, the HCT family offers input high-voltage thresholds around 2.0V at 5V VCC, matching LS-series inputs directly, whereas LS devices require stricter DC levels. Additionally, the HCT variant exhibits significantly lower power consumption—around 1 µA static current versus tens of microamps for LS—making it preferable in low-power or mixed-voltage environments.
Can the 74HCT595D,112 be used in a daisy-chained configuration without signal degradation over long traces?
Yes, the 74HCT595D,112 supports daisy-chaining multiple stages via its serial output (Q7S) feeding into the next device’s serial input (SER). However, cumulative propagation delays add up with each stage: approximately 15 ns per IC at 5V, totaling ~120 ns across eight devices. While this delay is manageable in most microcontroller-driven applications, it may impact timing-critical systems such as real-time LED matrix refresh or high-speed sensor interfaces. To mitigate risk, designers should limit chain length based on maximum allowable skew and ensure proper termination or buffering if transmission line effects become significant above 1 MHz operation.
What precautions should be taken when driving inductive loads directly from the 74HCT595D,112 outputs?
The 74HCT595D,112 can source/sink up to ±6 mA per output, which may be insufficient for direct drive of medium-to-large inductive loads like relays or solenoids without external buffering. Inductive kickback can exceed the absolute maximum ratings (±0.5 V below GND or above VCC), risking latch-up or device failure. Therefore, it's essential to use flyback diodes across inductive elements and consider discrete transistor drivers (e.g., NPN BJTs or MOSFETs) for higher current demands. Alternatively, optocouplers or dedicated driver ICs should be evaluated for galvanic isolation requirements.
How does temperature affect the clock-to-output delay of the 74HCT595D,112, and what implications does this have for thermal management in industrial applications?
Operating temperature ranges from -40°C to +125°C, but parametric drift occurs beyond room conditions. At elevated temperatures (e.g., 125°C), typical clock-to-Q propagation delay increases by roughly 30–40% compared to 25°C due to reduced carrier mobility in silicon. For example, a nominal 15 ns delay might extend to 20 ns at full temperature range. This affects synchronous system timing budgets, particularly in tightly synchronized multi-register designs. While passive cooling usually suffices given the SOIC package’s moderate power dissipation (~1 mW), layout practices—such as minimizing trace inductance and avoiding hot spots near other heat-generating components—are prudent in compact industrial enclosures.
Is it acceptable to leave unused outputs floating on the 74HCT595D,112, and what are the risks associated with doing so?
Floating outputs on the 74HCT595D,112 can lead to undefined logic states during power-up or transient events, potentially causing excessive power dissipation or unintended switching in downstream circuits. CMOS inputs exhibit high impedance, making them susceptible to electromagnetic interference (EMI) pickup, which may result in erratic behavior. Best practice dictates connecting unused outputs either to VCC through a pull-up resistor (to ensure logic-high stability) or to ground via a pull-down, depending on the intended function. Alternatively, tie them directly to adjacent active outputs if they serve no independent purpose.
How does the 74HCT595D,112 manage power-up sequencing relative to its master reset (MR) pin?
The 74HCT595D,112 features an asynchronous master reset (MR) pin that overrides all internal operations when pulled low. During power-up, if MR remains unconnected, internal biasing networks determine its state unpredictably until stable bias is established. This could cause spurious resets or data corruption upon initial clock pulses. To guarantee a clean initialization, MR should always be tied through a resistor (e.g., 10 kΩ) to VCC, ensuring it stays high during power ramp-up. Some systems implement a soft-start circuit using RC networks on MR to delay internal activation until supply voltage stabilizes above 2.5 V.
What are the recommended decoupling capacitor values and placement strategies for the 74HCT595D,112 in high-noise environments?
A 0.1 µF ceramic capacitor should be placed as close as possible to the VCC and GND pins of the 74HCT595D,112, ideally within 2 mm. This suppresses high-frequency noise and aids in maintaining stable supply rails during rapid digital transitions. For applications involving long PCBs or shared power planes, additional bulk capacitance (e.g., 10 µF tantalum or ceramic near the power entry point) helps stabilize overall rail integrity. Avoid electrolytic capacitors unless necessary, as their slow response limits effectiveness against fast transients. Always verify decoupling adequacy through transient load testing under worst-case switching patterns.
How does the 74HCT595D,112 compare to modern alternatives like the 74LVC595A in terms of speed, power, and compatibility?
The 74LVC595A operates over a wider voltage range (1.65 V to 5.5 V) and consumes significantly less power than the 74HCT595D,112, making it suitable for battery-powered or mixed-voltage systems. However, the HCT variant offers better compatibility with legacy TTL logic families due to its precise VIL/VIH thresholds. Speed-wise, both share similar propagation delays (~15 ns), though LVC benefits from improved process scaling for lower dynamic power. If interfacing with older 5V-only TTL systems, the HCT version avoids level-shifting overhead; otherwise, LVC provides greater flexibility and efficiency in contemporary low-voltage designs.
What are the implications of using the 74HCT595D,112 in a hot-swap scenario where power is applied asynchronously across subsystems?
Hot-swapping introduces uncontrolled voltage rise times and potential ground bounce, which can corrupt internal node voltages before the 74HCT595D,112 establishes correct logic states. Without dedicated hot-swap controllers, the device may latch incorrectly, leading to excessive shoot-through currents or even catastrophic failure. Implementing series resistors on input lines, TVS diodes for ESD protection, and ensuring common ground continuity reduces risk. Alternatively, using devices with built-in hot-swap support or adding supervisory circuits that delay register access until supplies stabilize improves robustness in modular systems.

Parts with Similar Specifications

The three parts on the right have similar specifications to NXP Semiconductors 74HCT595D,112

Product Attribute 74HCT595D,112 74HCT595DB,112 74HCT595DB,118 74HCT595D,118
Part Number 74HCT595D,112 74HCT595DB,112 74HCT595DB,118 74HCT595D,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Base Product Number - DAC34H84 MAX500 ADS62P42
Series - - - -

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74HCT595D,112 Image

74HCT595D,112

NXP Semiconductors
98D-74HCT595D,112

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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