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HomeProductsIntegrated Circuits (ICs)Specialized ICsPDTA123YE
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PDTA123YE - Freescale / NXP Semiconductors

Manufacturer Part Number
PDTA123YE
Manufacturer
NXP Semiconductors
Allelco Part Number
32D-PDTA123YE
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
12,430 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
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In stock: 12430

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Specifications

PDTA123YE Tech Specifications
Freescale / NXP Semiconductors - PDTA123YE technical specifications, attributes, parameters and parts with similar specifications to Freescale / NXP Semiconductors - PDTA123YE

Product Attribute Attribute Value
Part Number PDTA123YE
Package DAC91001
Description DAC91001
Stock Condition Get 12430 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer NXP Semiconductors
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the PDTA123YE handle current gain in low-voltage applications compared to higher-voltage variants, and what design considerations should be made for a 3.3V microcontroller interface?
The PDTA123YE features a typical DC current gain (hFE) of 300–600 across its operating range, making it suitable for low-voltage switching in 3.3V systems. However, due to its relatively low collector-emitter saturation voltage (VCE(sat) ~0.2V at IC = 100mA), it requires careful biasing to ensure sufficient base drive. At 3.3V logic levels, the base resistor must be chosen so that the base current exceeds the minimum required to saturate the transistor, typically 1/10th of the collector current. Given the limited headroom, designers should verify hFE under actual operating conditions and avoid using the transistor near its maximum ratings to maintain reliable switching performance.
What are the thermal limitations of the PDTA123YE when used as a switch in continuous operation, and how does junction-to-ambient thermal resistance affect long-term reliability?
The PDTA123YE has a maximum power dissipation (PD) of 200mW at 25°C, with derating above ambient temperatures due to its junction-to-ambient thermal resistance (RθJA). In continuous conduction mode, such as driving an LED or relay coil, this limits the allowable current to approximately 20–30mA unless supplemental cooling is implemented. Prolonged operation near these limits increases junction temperature, accelerating aging and reducing lifespan. For designs requiring higher currents, external heat sinking or switching architectures like Darlington configurations should be considered to mitigate thermal stress.
Can the PDTA123YE be safely used in bidirectional signal routing or level-shifting applications between 5V and 3.3V domains?
The PDTA123YE is unidirectional and not designed for bidirectional signal transfer. While it can function as a low-side switch in a 5V-to-3.3V level shifter by pulling a line down to ground, it cannot actively pull up to 3.3V without additional circuitry. Its maximum VCE rating of 200V ensures robustness against voltage transients, but its output impedance when off may not meet strict noise margins. For reliable bidirectional communication, dedicated level-shifter ICs or open-drain configurations with pull-up resistors are more appropriate than relying solely on the PDTA123YE’s characteristics.
How does the PDTA123YE compare to the PNP counterpart PDPA123YE in terms of switching speed and base drive requirements for PWM-driven loads?
The PDTA123YE (NPN) exhibits slightly faster turn-off times than the PDPA123YE (PNP) due to lower minority carrier storage effects in its epitaxial structure. This makes it more suitable for high-frequency PWM applications below 100kHz. However, both transistors require similar base currents—around 1–5mA for moderate collector currents—but the NPN variant typically demands a negative base bias relative to emitter during turn-off to accelerate deactivation. When driving inductive loads with PWM, the PDTA123YE benefits from reduced reverse recovery time, minimizing shoot-through risks in complementary pairs.
What precautions should be taken when using the PDTA123YE in environments with high electromagnetic interference (EMI), and how does its package contribute to noise susceptibility?
The SOT-23-6 package of the PDTA123YE has small lead lengths and minimal parasitic inductance, which reduces RF pickup compared to larger packages. However, its compact size also concentrates ESD vulnerability, especially at the base terminal. In high-EMI environments, proper PCB layout—short traces, decoupling capacitors near the supply pin, and avoiding parallel high-impedance nodes—is critical. Additionally, adding a small base-emitter resistor (e.g., 1kΩ) can dampen oscillations caused by stray capacitance, improving stability without significantly affecting switching speed.
Is the PDTA123YE suitable for use in automotive-grade temperature ranges (-40°C to +125°C), and what parameter drift might engineers expect?
The PDTA123YE is rated for -40°C to +125°C operation per NXP’s industrial specifications, making it viable for automotive edge applications if qualified under AEC-Q101. However, key parameters shift significantly: hFE decreases by up to 50% at elevated temperatures, increasing the required base drive for saturation. Leakage current (ICBO) doubles roughly every 10°C rise, potentially causing false triggering in high-impedance circuits at cold temperatures. Designers should derate current margins and include thermal feedback loops where precise control is essential.
How does the PDTA123YE perform in battery-powered devices with limited quiescent current budgets, and what leakage currents should be anticipated?
The PDTA123YE exhibits extremely low leakage currents—typically <1µA when off—making it compatible with coin-cell or Li-ion batteries. Collector-base reverse leakage (ICBO) measures around 10nA at 25°C and 100nA at 125°C, which is negligible in most applications. However, in ultra-low-power modes where the device remains partially biased, subthreshold conduction may introduce microamp-level losses. For systems targeting nanoampere sleep currents, alternative MOSFET-based solutions might offer superior off-state isolation, but the PDTA123YE remains a cost-effective choice for milliamp-range switching with acceptable quiescent impact.
What are the implications of using the PDTA123YE in a Darlington pair configuration for driving high-current loads, and how does it affect overall efficiency?
Combining two PDTA123YE transistors in a Darlington setup increases total current gain by a factor of ~90,000 (product of individual hFE values), enabling control of hundreds of mA from very weak input signals. However, this comes at the cost of elevated saturation voltage—up to 1.4V at 100mA—reducing efficiency in battery-operated systems. Power loss becomes significant at higher currents; for example, driving 200mA results in ~280mW dissipation, exceeding the single-device limit. Such configurations require heatsinking or switching regulators to maintain reliability, making them impractical for compact, low-power designs despite their gain advantage.

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Customer Reviews

Evaluation: 10 Articles

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

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Freescale / NXP Semiconductors

PDTA123YE

Freescale / NXP Semiconductors
32D-PDTA123YE

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