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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleLFUSCD05120A
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LFUSCD05120A - Littelfuse Inc.

Manufacturer Part Number
LFUSCD05120A
Manufacturer
Littelfuse
Allelco Part Number
98D-LFUSCD05120A
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,185 pcs available, New & Original
Parts Description
DIODE SIL CARB 1.2KV 5A TO220AC
Package
TO-220AC
Data sheet
LFUSCD05120A.pdf
RoHs Status
ROHS3 Compliant
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In stock: 5185

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Specifications

LFUSCD05120A Tech Specifications
Littelfuse Inc. - LFUSCD05120A technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD05120A

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-220AC
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-220-2
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 190 µA @ 1200 V
Current - Average Rectified (Io) 5A
Capacitance @ Vr, F 260pF @ 1V, 1MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key performance advantages of the LFUSCD05120A SiC Schottky diode compared to traditional silicon rectifiers in high-voltage, high-frequency switching applications?
The LFUSCD05120A leverages Silicon Carbide (SiC) technology to deliver significantly improved efficiency and thermal stability over conventional silicon diodes. With a reverse recovery time (trr) of 0 ns and a forward voltage drop (Vf) of only 1.7 V at 5 A, it minimizes switching losses and conduction losses in power converters operating above 100 kHz. This results in higher system efficiency, reduced heat dissipation, and enables more compact designs—critical for industrial motor drives and solar inverters where space and thermal management are constrained.
How does the LFUSCD05120A compare to other 1.2 kV, 5 A SiC diodes like the C4D20120A or STPSC5H12D in terms of leakage current and junction temperature capability?
At 1200 V reverse bias, the LFUSCD05120A exhibits a reverse leakage current of 190 µA, which is lower than many competitive devices in the same class due to optimized doping profiles in the SiC structure. While the C4D20120A and STPSC5H12D may offer similar breakdown voltages and currents, their leakage under identical conditions can be higher, especially as temperature increases. The LFUSCD05120A supports continuous operation up to 175°C junction temperature, ensuring reliable performance under sustained thermal stress, making it suitable for automotive and industrial environments with limited cooling capacity.
Can the LFUSCD05120A be used in parallel configurations for higher current applications, and what precautions should be taken during implementation?
Yes, paralleling LFUSCD05120A devices is feasible for achieving currents beyond 5 A, but requires careful attention to dynamic current sharing. Due to slight variations in threshold voltage and thermal resistance, one diode may carry disproportionate current during turn-on transients. To mitigate this, use matched pairs from the same batch and consider adding small source resistors or using a heatsink with uniform thermal contact. Additionally, ensure symmetrical PCB layout and thermal coupling to maintain balanced current distribution across devices.
What impact does the LFUSCD05120A’s low junction-to-case thermal resistance have on system-level thermal design, particularly in TO-220AC packaging?
The LFUSCD05120A’s TO-220AC package provides efficient thermal path from the silicon carbide die to the heatsink, enabling effective heat dissipation even under continuous 5 A operation. When combined with its low forward voltage drop, this reduces overall power loss (P_loss = I × Vf + Qrr × f_sw) and lowers case temperature by several degrees compared to silicon alternatives. In high-reliability systems such as EV charging stations or grid-tie inverters, this allows for smaller heatsinks or reduced fan speeds, improving system longevity and noise characteristics.
How does the LFUSCD05120A’s reverse recovery behavior influence EMI performance in hard-switched power topologies?
Unlike silicon PN diodes, the LFUSCD05120A has no significant reverse recovery charge due to its Schottky barrier mechanism, resulting in trr = 0 ns. This eliminates sharp di/dt transitions during commutation, which are primary contributors to electromagnetic interference (EMI). As a result, switching noise is minimized, simplifying filter design and easing compliance with regulatory standards such as CISPR 22/25. This makes the LFUSCD05120A ideal for applications requiring low-noise operation, including medical equipment and precision instrumentation.
Are there any derating considerations when selecting the LFUSCD05120A for long-term reliability in mission-critical systems?
For enhanced reliability in aerospace or industrial automation, it is advisable to derate both voltage and current. Although rated for 1200 V DC, applying no more than 80% of Vr (e.g., 960 V) helps reduce electric field stress and prolongs lifespan. Similarly, operating below 70% of Io (e.g., 3.5 A continuous) ensures margin against transient overloads and thermal cycling. These practices align with industry best practices such as those outlined in MIL-HDBK-217 or IEC 61709 for calculating FIT rates and MTBF.
What role does the 260 pF junction capacitance play in the LFUSCD05120A’s performance in snubber circuits or resonant converters?
The LFUSCD05120A’s junction capacitance of 260 pF at 1 V and 1 MHz affects its suitability in soft-switching topologies such as LLC or ZVS half-bridge converters. In these applications, parasitic capacitance can interact with transformer leakage inductance, potentially causing ringing or affecting zero-voltage switching (ZVS) timing. Designers must verify that the total capacitance, including device and parasitics, remains within acceptable limits for resonant frequency control. However, in hard-switched buck/boost converters, this capacitance has minimal impact due to low dv/dt requirements.
How does the LFUSCD05120A’s MSL rating and RoHS compliance affect procurement and assembly in global manufacturing environments?
Rated MSL 1 (Unlimited), the LFUSCD05120A does not require special humidity handling during reflow soldering, streamlining PCB assembly processes. Its full RoHS3 compliance ensures absence of lead, mercury, and other restricted substances, facilitating global sourcing without additional testing or exemptions. This simplifies supply chain logistics for OEMs targeting markets such as Europe and North America, reducing customs delays and certification overhead.
What are the typical substitution options for the LFUSCD05120A, and how do they compare in terms of key electrical parameters?
Substitutes include STPSC20H12D, C4D20120A, and C4D02120A, all offering similar 1.2 kV blocking voltage and SiC technology. However, the STPSC20H12D is rated for 20 A, which exceeds the LFUSCD05120A’s 5 A current, making it overkill unless future scalability is needed. The C4D20120A may exhibit slightly higher Vf (around 1.9–2.0 V) and marginally higher leakage current, impacting efficiency. The C4D02120A operates at a lower current rating, limiting its applicability. Thus, the LFUSCD05120A remains optimal for moderate-current, high-efficiency designs requiring proven Littelfuse reliability.
Can the LFUSCD05120A be used in bridge configurations without additional protection circuitry?
While technically possible, using the LFUSCD05120A in a freewheeling or bridge rectifier configuration without anti-parallel capacitors or snubbers may expose it to voltage overshoots during turn-off, especially in inductive loads. Although rated for 1200 V, fast switching can induce transient voltages exceeding Vr due to stray inductance. Therefore, it is recommended to include RC snubbers or TVS diodes across each diode in the bridge to clamp dv/dt and protect against avalanche conditions, ensuring robust operation in real-world layouts.
How does the LFUSCD05120A perform under pulsed load conditions common in motor drive applications?
The LFUSCD05120A handles pulsed loads effectively due to its fast switching speed and low stored charge. During regenerative braking or torque pulses, it recovers instantly without reverse recovery spikes, preventing voltage ringing and protecting upstream components. Its 5 A average current rating can support peak currents up to 10–15 A for short durations (milliseconds), provided thermal mass prevents junction temperature from exceeding 175°C. Proper heatsinking and thermal modeling are essential to validate performance across duty cycles.
What considerations apply when integrating the LFUSCD05120A into a printed circuit board with mixed-signal or sensitive analog sections?
Due to its high-speed switching and potential for conducted EMI, physical separation between the LFUSCD05120A and sensitive analog traces is recommended. Use ground planes beneath the diode to contain return currents, minimize loop area in high-current paths, and avoid placing decoupling capacitors too close to the diode leads, which could couple noise via parasitic inductance. Additionally, consider ferrite beads on auxiliary power rails if digital noise coupling remains a concern after layout optimization.
Is the LFUSCD05120A suitable for use in renewable energy systems such as solar microinverters?
Yes, the LFUSCD05120A is well-suited for solar microinverters due to its high voltage rating, low conduction loss, and immunity to reverse recovery issues common in high-frequency boost stages. Operating at switching frequencies above 50 kHz, it improves inverter efficiency by reducing switching losses and enables smaller magnetics and capacitors. Its ability to operate continuously at high junction temperatures also aligns with outdoor installation environments where thermal cycling is frequent.
How does Littelfuse ensure consistency and traceability of the LFUSCD05120A across different production batches?
Littelfuse implements strict process controls and parametric screening for the LFUSCD05120A, including wafer-level electrical testing and final inspection per AEC-Q101 (for qualified variants). Each device undergoes characterization across temperature, voltage, and current to ensure consistent Vf, leakage, and dynamic switching behavior. Traceability is maintained through unique lot codes and serialization, supporting failure analysis and quality audits—essential for industries like automotive where component lifecycle tracking is mandated.
What environmental and regulatory factors should engineers evaluate before deploying the LFUSCD05120A in consumer electronics?
While the LFUSCD05120A is RoHS3 compliant and ECCN EAR99, its 1.2 kV rating exceeds typical consumer product needs, suggesting it may be used in power supplies for industrial peripherals rather than smartphones or laptops. Engineers should confirm local regulations regarding hazardous substance limits and export controls. Additionally, despite MSL 1, prolonged exposure to high humidity environments may still require conformal coating to prevent moisture ingress during field service life, particularly in humid climates.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD05120A

Product Attribute LFUSCD15120A LFUSCD10120A LFUSCD06065A LFUSCD04065A
Part Number LFUSCD15120A LFUSCD10120A LFUSCD06065A LFUSCD04065A
Manufacturer Littelfuse Inc. Littelfuse Inc. Hamlin / Littelfuse Littelfuse Inc.
Operating Temperature - Junction - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Current - Reverse Leakage @ Vr - - - -
Reverse Recovery Time (trr) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Mounting Type - Surface Mount Through Hole Surface Mount
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Current - Average Rectified (Io) - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Technology - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Speed - - - -
Series - - - -
Capacitance @ Vr, F - - - -

LFUSCD05120A Datasheet PDF

Download LFUSCD05120A pdf datasheets and Littelfuse Inc. documentation for LFUSCD05120A - Littelfuse Inc..

Datasheets
LFUSCD05120A Datasheet.pdf

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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Littelfuse Inc.

LFUSCD05120A

Littelfuse Inc.
98D-LFUSCD05120A

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