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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleLFUSCD10065A
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LFUSCD10065A - Littelfuse Inc.

Manufacturer Part Number
LFUSCD10065A
Manufacturer
Littelfuse
Allelco Part Number
32D-LFUSCD10065A
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,170 pcs available, New & Original
Parts Description
DIODE SIL CARB 650V 10A TO220AC
Package
TO-220AC
Data sheet
LFUSCD10065A.pdf
RoHs Status
ROHS3 Compliant
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In stock: 5170

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Specifications

LFUSCD10065A Tech Specifications
Littelfuse Inc. - LFUSCD10065A technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD10065A

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-220AC
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-220-2
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 250 µA @ 650 V
Current - Average Rectified (Io) 10A
Capacitance @ Vr, F 290pF @ 1V, 1MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the LFUSCD10065A’s reverse recovery time and leakage current compare to a traditional silicon PN diode under high-voltage blocking conditions, and what are the implications for switching losses in a 650 V buck converter?
The LFUSCD10065A exhibits zero reverse recovery time (0 ns) due to its SiC Schottky construction, eliminating the charge storage and recombination delays inherent in silicon PN diodes. In contrast, a typical silicon rectifier like the MUR3060PT shows a reverse recovery time of approximately 50–70 ns at 10 A. This difference translates directly into lower switching losses—especially in hard-switched topologies—reducing thermal stress and improving efficiency. Additionally, the LFUSCD10065A maintains only 250 µA of reverse leakage at 650 V, whereas silicon devices can exhibit microampere-to-milliampere level leakage under similar conditions, further reducing conduction losses during off-state operation in high-frequency applications.
What are the key thermal and electrical trade-offs when selecting the LFUSCD10065A over a comparable silicon-based diode for a continuous 8 A load in a 48 V to 12 V DC-DC converter operating at 100 kHz?
At an average current of 8 A, the LFUSCD10065A dissipates roughly 13.6 W of power (based on Vf = 1.7 V @ 10 A extrapolated to 8 A), resulting in junction temperatures well below its 175°C maximum when properly heatsinked. While this forward voltage is higher than ideal silicon diodes, the absence of switching losses offsets much of that penalty in high-frequency designs. Silicon alternatives such as the UF4007 would have lower Vf (~1.1 V) but incur significant switching loss per cycle due to slow trr. The net result is often lower total system loss with the LFUSCD10065A, despite higher steady-state conduction loss, making it preferable in compact, high-efficiency converters where thermal headroom is limited.
Can the LFUSCD10065A be used safely in parallel with other silicon carbide or silicon diodes without derating, and what precautions are necessary for current sharing?
Parallel operation is possible but not recommended without careful design validation. Even small variations in threshold voltage or temperature coefficients can cause imbalanced current distribution. When paralleling with another LFUSCD10065A or similar SiC Schottky, ensure matched thermal coupling and consider adding small balancing resistors (e.g., 0.1 Ω) in series with each device to stabilize dynamic current sharing. Using it alongside silicon diodes is discouraged due to mismatched turn-on/turn-off behaviors and potential for reverse recovery-induced voltage spikes, which could exceed the LFUSCD10065A’s ruggedness limits.
What is the significance of the 290 pF junction capacitance in the LFUSCD10065A at 1 V bias and how does it impact snubber design in a resonant LLC half-bridge topology?
The junction capacitance of 290 pF at 1 V and 1 MHz indicates moderate charge storage capability, which influences the device’s ability to respond quickly to transient voltage swings. In an LLC converter operating near resonance, this capacitance contributes to the overall input capacitance seen by the switching node, potentially altering the soft-switching characteristics if not accounted for in transformer design or gate drive timing. While not dominant compared to output capacitance in MOSFETs, it can affect zero-current detection accuracy and may necessitate minor adjustments to resonant tank parameters when using the LFUSCD10065A as a freewheeling diode.
Why might engineers prefer the TO-220AC package of the LFUSCD10065A over surface-mount alternatives for high-reliability industrial power supplies despite higher parasitic inductance?
The TO-220AC offers superior thermal resistance (typically <1.5°C/W with adequate heatsinking) and mechanical robustness, making it ideal for sustained loads above 5 A. Although SMD packages reduce loop inductance and improve EMI performance, the LFUSCD10065A’s through-hole form factor enables direct attachment to standard heat sinks without additional interfacial layers, lowering thermal impedance. For industrial environments requiring long MTBF and vibration resistance, the reliability advantages outweigh the minor switching speed penalties, especially since the device’s zero reverse recovery minimizes sensitivity to layout parasitics.
How does the LFUSCD10065A perform in terms of surge handling capability relative to its rated 10 A average current, and what are the recommended derating guidelines for repetitive pulse loads?
While the datasheet specifies 10 A as the average forward current rating, surge currents must be evaluated based on thermal mass and pulse duration. The LFUSCD10065A typically supports non-repetitive surge currents up to 125 A for 8.3 ms (half-sine wave), derived from its low thermal impedance and fast switching. However, for repetitive pulses exceeding 10% duty cycle at peak currents near 50 A, continuous junction temperature rise must be calculated. As a rule of thumb, derate the average current by 20–30% when operating near peak surge levels to avoid cumulative heating, particularly in systems with frequent transients like motor drives or solar inverters.
What substitution options exist for the LFUSCD10065A, and under what conditions should one consider replacing it in an existing design?
Substitutes such as C3D10065A, STPSC10H065DY, and SCS304APC9 offer similar SiC Schottky characteristics and may be viable depending on packaging and supply chain constraints. However, differences in Vf, trr, and package thermal performance (e.g., surface-mount vs. through-hole) can affect efficiency and thermal management. Replacement should only occur after verifying compatibility in worst-case operating conditions, including junction temperature profiles and PCB real estate. The LFUSCD10065A remains optimal when TO-220AC mounting and proven reliability in harsh environments are required.
How does the LFUSCD10065A’s junction temperature limit of 175°C influence long-term reliability in automotive or aerospace applications compared to commercial-grade diodes?
Operating continuously at elevated ambient temperatures (e.g., 125°C in automotive underhood environments), the LFUSCD10065A retains significant thermal margin due to its 175°C maximum junction temperature, enabling stable performance without aggressive derating. Most commercial silicon diodes are rated for 150°C junctions, limiting their usable life at high ambient temps. This extended thermal window reduces the risk of premature aging from thermal cycling and electromigration, enhancing lifetime and failure rate predictability in mission-critical systems where the LFUSCD10065A is deployed as a rectifier or freewheel diode.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD10065A

Product Attribute LFUSCD06065A LFUSCD08065A LFUSCD04065A LFUSCD20065B
Part Number LFUSCD06065A LFUSCD08065A LFUSCD04065A LFUSCD20065B
Manufacturer Hamlin / Littelfuse Littelfuse Inc. Littelfuse Inc. Littelfuse Inc.
Speed - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Average Rectified (Io) - - - -
Series - - - -
Capacitance @ Vr, F - - - -
Operating Temperature - Junction - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Reverse Recovery Time (trr) - - - -
Technology - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Mounting Type - Surface Mount Through Hole Surface Mount
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Current - Reverse Leakage @ Vr - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)

LFUSCD10065A Datasheet PDF

Download LFUSCD10065A pdf datasheets and Littelfuse Inc. documentation for LFUSCD10065A - Littelfuse Inc..

Datasheets
LFUSCD10065A Datasheet.pdf

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America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
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Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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Littelfuse Inc.

LFUSCD10065A

Littelfuse Inc.
32D-LFUSCD10065A

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