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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleLFUSCD10120A
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LFUSCD10120A - Littelfuse Inc.

Manufacturer Part Number
LFUSCD10120A
Manufacturer
Littelfuse
Allelco Part Number
32D-LFUSCD10120A
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,230 pcs available, New & Original
Parts Description
DIODE SIL CARB 1.2KV 10A TO220AC
Package
TO-220AC
Data sheet
LFUSCD10120A.pdf
RoHs Status
ROHS3 Compliant
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In stock: 4230

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Specifications

LFUSCD10120A Tech Specifications
Littelfuse Inc. - LFUSCD10120A technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD10120A

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-220AC
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-220-2
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Current - Average Rectified (Io) 10A
Capacitance @ Vr, F 500pF @ 1V, 1MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical performance characteristics of the LFUSCD10120A silicon carbide Schottky diode that influence high-efficiency power converter design?
The LFUSCD10120A operates with a forward voltage drop of 1.7 V at 10 A, resulting in lower conduction losses compared to traditional silicon diodes, which is critical for improving efficiency in high-voltage applications. Its reverse leakage current is only 250 µA at 1200 V, minimizing standby power dissipation. With a junction temperature rating of up to 175°C and reverse recovery time effectively zero (trr = 0 ns), this device supports high-frequency switching without energy loss from reverse recovery. These traits make it suitable for use in resonant converters, solar inverters, and industrial motor drives where thermal stress and switching frequency directly impact overall system efficiency.
How does the LFUSCD10120A compare to standard silicon rectifier diodes in terms of switching behavior and thermal management during continuous operation?
Unlike silicon rectifiers that exhibit significant reverse recovery charge and energy loss, the LFUSCD10120A leverages SiC Schottky technology to achieve near-zero reverse recovery time, eliminating switching spikes and associated EMI. This reduces the need for snubber circuits and improves reliability at high frequencies. Additionally, its low forward voltage (1.7 V @ 10 A) results in approximately 30–40% lower conduction losses than typical 1N540x series diodes under similar conditions. Combined with a maximum junction temperature of 175°C, the component enables more compact heatsink designs and higher ambient operating temperatures, making it advantageous for space-constrained or thermally demanding environments such as automotive or aerospace power systems.
In what types of power electronics applications is the LFUSCD10120A most appropriately applied, and why?
The LFUSCD10120A is well-suited for high-voltage, high-efficiency applications such as photovoltaic inverters, electric vehicle onboard chargers, and industrial uninterruptible power supplies (UPS). Its 1200 V blocking capability and robust 10 A continuous current rating support bidirectional power flow and fault tolerance. The absence of reverse recovery current allows for reliable operation at switching frequencies above 50 kHz, reducing passive component size. Furthermore, its low capacitance (500 pF at 1 MHz) minimizes dynamic losses during commutation, making it ideal for hard-switched topologies like buck, boost, or full-bridge configurations requiring precise timing and minimal distortion.
How should the mounting configuration and package type of the LFUSCD10120A affect PCB layout and thermal design considerations?
The LFUSCD10120A uses a TO-220AC package with through-hole mounting, requiring adequate clearance for mechanical retention and thermal expansion. Its flat base facilitates direct attachment to a heatsink using thermal interface material, ensuring efficient heat transfer from the 175°C-rated junction. Designers must ensure sufficient copper area on the PCB to distribute thermal stress and avoid hotspots. Additionally, the dual-lead configuration (anode-cathode-anode) may influence gate drive isolation in half-bridge layouts, necessitating careful routing to prevent parasitic coupling. Proper thermal management is essential to maintain long-term reliability, especially when operating near full load in enclosed systems with limited airflow.
What derating guidelines should be considered when selecting the LFUSCD10120A for mission-critical or extended-temperature applications?
Although the LFUSCD10120A can operate up to 175°C junction temperature, conservative derating is recommended for high-reliability systems. For continuous operation above 100°C ambient, consider limiting power dissipation by 10–20% to extend lifetime and reduce failure rate. Similarly, while rated for 1200 V reverse voltage, applying no more than 80–90% of this value (e.g., <1080 V) under surge conditions improves margin against voltage transients. Current derating may also be necessary if switching frequency exceeds 100 kHz due to increased switching losses, even though trr is negligible. These practices align with industry standards for semiconductor reliability in automotive (AEC-Q101) and industrial environments.
How does the LFUSCD10120A perform in comparison to similar SiC Schottky diodes from other manufacturers when evaluating total cost of ownership in mass production?
While the LFUSCD10120A may have a higher unit price than silicon alternatives, its superior efficiency and ruggedness often reduce system-level costs. Lower conduction and switching losses translate into smaller magnetics and heatsinks, reducing BOM cost and assembly complexity. When comparing against competing SiC devices like Wolfspeed’s C3D10065A (1200 V, 10 A), the LFUSCD10120A offers comparable performance with standardized TO-220AC packaging, easing supply chain integration and qualification cycles. Over time, the reduced cooling requirements and improved mean time between failures (MTBF) contribute to lower operational expenses, particularly in high-duty-cycle applications such as renewable energy systems.
What are the implications of the LFUSCD10120A’s zero reverse recovery time on EMI filtering and circuit protection design?
The LFUSCD10120A’s near-instantaneous turn-off eliminates reverse recovery current spikes, which are a major source of high-frequency noise in rectifier circuits. This significantly reduces conducted and radiated emissions, simplifying compliance with EMC standards such as IEC 61000-3-2. Consequently, designers can minimize or eliminate snubber networks typically used with silicon diodes to suppress voltage overshoots. However, other non-linear elements (e.g., MOSFETs or inductors) in the same circuit may still generate noise, so targeted filtering may still be required. Overall, the device enables cleaner power conversion profiles, supporting faster certification timelines and reduced external component count.
Can the LFUSCD10120A be paralleled safely for higher current applications, and what precautions are necessary?
Yes, the LFUSCD10120A can be paralleled to increase current handling, but only with strict attention to current sharing. Due to manufacturing variations, individual devices may not share current equally without balancing resistors or matched thermal conditions. To ensure stable operation, each diode should be placed in close proximity on a shared heatsink, and traces or leads should be symmetrical to minimize parasitic inductance differences. Additionally, the combined forward voltage drop across parallel branches must remain balanced—any mismatch can lead to one device carrying disproportionate current during startup or transient events. Monitoring junction temperature during prototyping is advised to validate thermal symmetry.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD10120A

Product Attribute LFUSCD15120A LFUSCD05120A LFUSCD10065A LFUSCD04065A
Part Number LFUSCD15120A LFUSCD05120A LFUSCD10065A LFUSCD04065A
Manufacturer Littelfuse Inc. Littelfuse Inc. Littelfuse Inc. Littelfuse Inc.
Reverse Recovery Time (trr) - - - -
Speed - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Series - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Average Rectified (Io) - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - Junction - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Technology - - - -
Capacitance @ Vr, F - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Reverse Leakage @ Vr - - - -

LFUSCD10120A Datasheet PDF

Download LFUSCD10120A pdf datasheets and Littelfuse Inc. documentation for LFUSCD10120A - Littelfuse Inc..

Datasheets
LFUSCD10120A Datasheet.pdf

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    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

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Brazil 7
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Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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Littelfuse Inc.

LFUSCD10120A

Littelfuse Inc.
32D-LFUSCD10120A

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