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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleLFUSCD15120A
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LFUSCD15120A - Littelfuse Inc.

Manufacturer Part Number
LFUSCD15120A
Manufacturer
Littelfuse
Allelco Part Number
98D-LFUSCD15120A
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,244 pcs available, New & Original
Parts Description
DIODE SIL CARB 1.2KV 15A TO220AC
Package
TO-220AC
Data sheet
LFUSCD15120A.pdf
RoHs Status
ROHS3 Compliant
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Specifications

LFUSCD15120A Tech Specifications
Littelfuse Inc. - LFUSCD15120A technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD15120A

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-220AC
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-220-2
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 375 µA @ 1200 V
Current - Average Rectified (Io) 15A
Capacitance @ Vr, F 750pF @ 1V, 1MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key advantages of using the LFUSCD15120A SiC Schottky diode in high-frequency power conversion applications compared to traditional silicon-based rectifiers?
The LFUSCD15120A leverages silicon carbide (SiC) technology to deliver near-zero reverse recovery charge (Qrr), enabling switching frequencies well above 100 kHz without the associated diode losses seen in silicon fast-recovery or ultrafast diodes. This results in significantly reduced switching losses, lower EMI, and improved overall efficiency in topologies such as PFC boost stages, LLC resonant converters, and motor drive inverters. Its 1200 V rating and 15 A average current capability allow it to replace multiple paralleled silicon devices in high-voltage designs while simplifying thermal management.
How does the forward voltage drop of the LFUSCD15120A at 15 A compare with similarly rated silicon carbide and silicon alternatives under real-world thermal conditions?
At 15 A and 25°C, the LFUSCD15120A exhibits a forward voltage of 1.7 V, which increases only marginally with junction temperature due to SiC’s positive temperature coefficient above ~100°C. In contrast, silicon ultrafast diodes typically show lower Vf at light loads but suffer from higher conduction losses at full load and elevated temperatures. When compared to other 1200 V SiC diodes like the C4D20120A, the LFUSCD15120A offers comparable Vf but with a more favorable trade-off in leakage current and thermal stability, making it better suited for continuous high-load operation.
Can the LFUSCD15120A be safely operated near its maximum junction temperature of 175°C in industrial environments without derating?
What is the significance of the 0 ns reverse recovery time specification for the LFUSCD15120A, and how does it impact snubber design in hard-switching circuits?
The “0 ns” reverse recovery time indicates that the LFUSCD15120A, as a SiC Schottky diode, does not exhibit minority carrier storage effects. This eliminates reverse recovery current spikes during turn-off, which are common in silicon PN junction diodes. As a result, snubber circuits can often be minimized or eliminated in hard-switching applications like buck or boost converters, reducing component count and improving efficiency. However, layout parasitics and high di/dt can still induce voltage overshoot, so proper PCB layout and gate drive control remain critical.
How does the LFUSCD15120A perform in parallel configurations for higher current applications, and what precautions are necessary?
While the LFUSCD15120A can be paralleled to increase current handling, its positive temperature coefficient for forward voltage above 100°C aids in natural current sharing under thermal imbalance. However, precise matching of trace lengths, gate drive symmetry (if used with active devices), and thermal coupling is essential to prevent dynamic current hogging. Unlike silicon diodes, SiC devices do not benefit from negative Vf temperature coefficients at low currents, so initial static sharing must be ensured through symmetrical layout. For currents exceeding 30 A, consider using a single higher-rated module instead.
What are the implications of the 375 µA reverse leakage current at 1200 V for the LFUSCD15120A in high-voltage standby or idle modes?
At 25°C, the 375 µA leakage current of the LFUSCD15120A at 1200 V results in approximately 0.45 W of static power loss per device—relatively low compared to silicon PN diodes, which can exhibit several milliamps under the same conditions. However, leakage increases exponentially with temperature; at 150°C, it may exceed 1 mA. In always-on power supplies or solar inverters with extended idle periods, this contributes to standby losses. Designers should evaluate cumulative leakage in multi-device strings and consider cooling strategies if system-level efficiency targets are stringent.
How does the LFUSCD15120A compare to the STPSC20H12D in terms of switching performance and thermal behavior in a 3-phase inverter application?
Both the LFUSCD15120A and STPSC20H12D are 1200 V, 20 A SiC Schottky diodes, but the LFUSCD15120A is rated for 15 A continuous, offering a more conservative design margin in thermally constrained environments. The STPSC20H12D has a slightly lower forward voltage (1.65 V @ 20 A), but the LFUSCD15120A demonstrates better thermal stability due to Littelfuse’s optimized packaging and lower thermal resistance. In a 3-phase inverter, the LFUSCD15120A’s consistent switching behavior across temperature reduces dead-time optimization complexity and improves waveform fidelity under variable loads.
Is the LFUSCD15120A suitable for use in automotive 800 V battery systems, and what derating guidelines apply?
The LFUSCD15120A’s 1200 V rating provides a 50% margin over 800 V bus voltages, which is acceptable for automotive applications where transient spikes (e.g., load dump) can reach 1000 V. However, automotive standards typically require derating to 80% of maximum voltage and current under worst-case conditions. Thus, continuous operation should not exceed 960 V and 12 A. Additionally, the TO-220AC package must be mounted with vibration-resistant fixings and thermal interface materials qualified for under-hood environments. While not AEC-Q101 certified, it may be used in non-safety-critical auxiliary systems with proper validation.
What layout considerations are critical when using the LFUSCD15120A in a high-frequency DC-DC converter to minimize parasitic inductance and voltage overshoot?
The through-hole TO-220AC package of the LFUSCD15120A requires careful attention to lead length and loop area. Minimize the current loop between the diode, DC bus capacitor, and switching device by placing components in close proximity and using short, wide traces or busbars. Kelvin connections for gate drives (if paired with MOSFETs/IGBTs) help reduce common-source inductance. Even with zero reverse recovery, fast di/dt during turn-off can induce overshoot due to stray inductance—typically 50–100 nH per inch of lead. Adding a small RC snubber or ferrite bead may be necessary in layouts with long leads or high switching speeds (>50 V/ns).
How does the capacitance of the LFUSCD15120A (750 pF @ 1 V, 1 MHz) affect performance in resonant and soft-switching topologies?
The 750 pF junction capacitance of the LFUSCD15120A is relatively stable with reverse voltage due to SiC’s wide bandgap, but it still contributes to capacitive losses in resonant converters. In LLC or phase-shifted full-bridge designs, this capacitance interacts with transformer leakage inductance and must be accounted for in resonant tank tuning. While lower than comparable silicon diodes, it is higher than some trench SiC devices, so designers should model its effect on zero-voltage switching (ZVS) boundaries. At 1 MHz, the capacitive reactance is approximately 212 Ω, which may influence EMI filtering requirements in high-frequency applications.
Can the LFUSCD15120A replace a silicon fast recovery diode in an existing 1200 V rectifier circuit without modifying the gate drive or control logic?
Yes, the LFUSCD15120A can typically drop into existing 1200 V rectifier circuits designed for silicon fast recovery diodes, provided the thermal and mechanical footprints are compatible. Since it lacks reverse recovery, it reduces stress on the switching device and may allow for reduced dead time or simpler gate driving. However, the lower Vf may slightly increase conduction losses in low-duty-cycle applications, and the higher cost of SiC must be justified by system-level gains in efficiency, size, or cooling. No control logic changes are needed, but efficiency validation under full load is recommended.
What is the expected lifetime and failure modes of the LFUSCD15120A under high-temperature reverse bias (HTRB) stress conditions?
The LFUSCD15120A is designed to withstand prolonged operation at 1200 V reverse bias and elevated temperatures, with MSL 1 rating indicating no moisture sensitivity concerns. Under HTRB testing (typically 1000 hours at 1200 V, 150°C), SiC Schottky diodes like the LFUSCD15120A show minimal degradation in leakage current and no catastrophic failure due to robust material properties. Primary failure modes are gradual increase in leakage or bond wire fatigue under thermal cycling. For long-term reliability, avoid exceeding 150°C junction temperature and ensure adequate heatsinking to minimize thermal gradients.
How does the LFUSCD15120A compare to the C4D02120A in terms of cost-performance trade-offs for industrial motor drives?
The C4D02120A is a 2 A SiC diode with lower current capability, making it suitable for low-power auxiliary supplies, whereas the LFUSCD15120A is optimized for high-current rectification in motor drive inverters and PFC stages. While the C4D02120A offers lower conduction losses at light loads, the LFUSCD15120A provides superior thermal performance and current density for 15 A applications. In a 10 kW motor drive, using the LFUSCD15120A reduces the need for paralleling multiple lower-current diodes, simplifying assembly and improving reliability, despite a higher per-unit cost.
What EMI mitigation strategies are effective when using the LFUSCD15120A in hard-switched applications despite its fast switching characteristics?
Although the LFUSCD15120A eliminates reverse recovery-induced noise, its fast switching edges (dv/dt > 50 V/ns) can generate high-frequency EMI through parasitic capacitances and inductances. Effective mitigation includes using a low-inductance DC bus layout, adding common-mode chokes, and incorporating gate resistors to slightly slow the turn-off edge of the complementary switch. Shielded gate drives and proper grounding of the heatsink (if isolated) also help. Conducted EMI filters should be designed to attenuate frequencies above 10 MHz, where SiC switching harmonics are most prominent.
Is the LFUSCD15120A compatible with automated through-hole assembly processes, and what soldering profile is recommended?
The LFUSCD15120A in TO-220AC package is compatible with selective soldering and wave soldering processes commonly used in through-hole assembly. A peak reflow temperature of 260°C for up to 10 seconds is acceptable, but thermal profiling should avoid prolonged exposure above 230°C to prevent package stress. Due to its MSL 1 rating, no baking or dry packing is required prior to assembly. Ensure adequate solder fillet formation on both leads and use thermally balanced pad designs to prevent tombstoning or skewing during soldering.
How does the LFUSCD15120A perform in avalanche energy conditions, and is it rated for repetitive surge events?
The LFUSCD15120A is not explicitly rated for repetitive avalanche energy, as SiC Schottky diodes generally lack the robust avalanche capability of silicon PIN diodes. While it can withstand brief overvoltage transients due to its high breakdown margin, sustained or repetitive surge events (e.g., inductive load switching) should be clamped using external TVS diodes or snubbers. Designers should avoid relying on the diode’s inherent avalanche robustness and instead implement protective circuitry to ensure long-term reliability in harsh environments.
What are the thermal resistance characteristics of the LFUSCD15120A when mounted with different interface materials, and how does this affect derating curves?
The junction-to-case thermal resistance (RθJC) of the LFUSCD15120A is approximately 1.5°C/W. When mounted with a thermal pad (e.g., 5 W/mK) and a properly heatsunk TO-220AC package, RθJA can be reduced to 30–35°C/W in natural convection. Using thermal grease with higher conductivity (8–12 W/mK) and forced airflow (2–3 m/s) can further lower RθJA to ~20°C/W. These values directly impact the allowable power dissipation: at 25°C ambient, the device can dissipate ~3.75 W without exceeding 150°C junction temperature. Derating should begin above 100°C ambient to maintain safe operating margins.
Can the LFUSCD15120A be used in bidirectional power flow applications, such as regenerative braking systems?
The LFUSCD15120A is a unidirectional diode and cannot conduct reverse current, making it unsuitable for true bidirectional power flow. However, it can be used in anti-parallel configurations with active switches (e.g., MOSFETs) in regenerative systems, where the diode provides freewheeling during switch off-time. In such cases, the LFUSCD15120A’s fast switching and low losses improve efficiency during energy recovery phases. For fully bidirectional conduction, a dedicated SiC MOSFET or a diode bridge with active control is required.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD15120A

Product Attribute LFUSCD10120A LFUSCD05120A LFUSCD10065A LFUSCD16065B
Part Number LFUSCD10120A LFUSCD05120A LFUSCD10065A LFUSCD16065B
Manufacturer Littelfuse Inc. Littelfuse Inc. Littelfuse Inc. Littelfuse Inc.
Reverse Recovery Time (trr) - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Current - Reverse Leakage @ Vr - - - -
Current - Average Rectified (Io) - - - -
Capacitance @ Vr, F - - - -
Speed - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - Junction - - - -
Technology - - - -
Series - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -

LFUSCD15120A Datasheet PDF

Download LFUSCD15120A pdf datasheets and Littelfuse Inc. documentation for LFUSCD15120A - Littelfuse Inc..

Datasheets
LFUSCD15120A Datasheet.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

  • Daic***K.
    Mar 23, 2026

    Very good. No issue after long time testing.

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Littelfuse Inc.

LFUSCD15120A

Littelfuse Inc.
98D-LFUSCD15120A

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