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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleLFUSCD16065B
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LFUSCD16065B - Littelfuse Inc.

Manufacturer Part Number
LFUSCD16065B
Manufacturer
Littelfuse
Allelco Part Number
98D-LFUSCD16065B
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
3,658 pcs available, New & Original
Parts Description
DIODE SIL CARB 650V 16A TO247AD
Package
TO-247AD
Data sheet
LFUSCD16065B.pdf
RoHs Status
ROHS3 Compliant
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Specifications

LFUSCD16065B Tech Specifications
Littelfuse Inc. - LFUSCD16065B technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD16065B

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-247AD
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-247-3
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 460 µA @ 650 V
Current - Average Rectified (Io) 16A
Capacitance @ Vr, F 520pF @ 1V, 1MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the LFUSCD16065B compare to standard silicon diodes in high-frequency switching applications, and what are the key performance advantages for a 16A rectifier design?
The LFUSCD16065B leverages SiC (Silicon Carbide) Schottky technology, which fundamentally eliminates reverse recovery current—evident from its 0 ns trr specification—unlike conventional silicon PN-junction or even fast-recovery diodes that exhibit significant reverse recovery times. This enables superior efficiency in hard-switching topologies such as buck, boost, or resonant converters operating above 50 kHz. For a 16A application, this means reduced conduction and switching losses simultaneously: at 16 A, the forward voltage drop of 1.7 V results in approximately 27 W of conduction loss under full load, but without any additional energy dissipation during turn-off transients. In comparison to a typical silicon diode with similar current rating, this translates to measurable improvements in thermal management requirements and overall system efficiency, especially at elevated switching frequencies.
What is the significance of the 460 µA reverse leakage current at 650 V in the LFUSCD16065B, and how should it influence thermal design in continuous operation?
The reverse leakage current of 460 µA at 650 V represents a relatively low power dissipation path when the device is off-state. While not negligible, it contributes only about 0.3 mW under full blocking voltage conditions. However, cumulative effects across multiple devices or prolonged exposure to high ambient temperatures can impact junction temperature, particularly since the maximum junction temperature is rated at 175°C. Engineers must consider this parameter in systems where many LFUSCD16065B diodes operate in parallel or within densely populated power stages. Although the impact on total system loss is minor compared to conduction or switching losses, accurate power budgeting remains essential for reliable thermal modeling, especially in designs targeting high reliability or extended operational lifespans.
Can the LFUSCD16065B be used in parallel configurations for higher current applications, and what precautions are necessary to ensure current sharing?
Yes, paralleling LFUSCD16065B devices is feasible due to their positive temperature coefficient of forward voltage—meaning that as one die heats up and increases Vf, it naturally draws less current relative to others, promoting passive current sharing. However, layout symmetry, trace inductance balancing, and gate drive matching become critical. Without careful PCB routing, mismatches in parasitic inductance can cause uneven current distribution during transient events. It's recommended to use identical parts, maintain symmetric paths, and possibly include small balancing resistors if operating conditions involve highly dynamic loads. The 16A rating per device allows for straightforward scaling to 32A or more using two units, provided thermal coupling and electrical symmetry are optimized.
How does the LFUSCD16065B’s capacitance of 520 pF at 1V, 1MHz influence EMI performance in a 400V DC-DC converter design?
The junction capacitance of 520 pF affects high-frequency noise transmission between anode and cathode, potentially contributing to conducted emissions in tightly regulated power supplies. At 1 MHz, this capacitance presents a reactance of approximately 250 kΩ, which attenuates high-frequency signals but may still couple noise into input or output filtering networks depending on impedance levels. In a 400V system utilizing the LFUSCD16065B, this parameter must be evaluated alongside snubber circuits and common-mode choke design to prevent resonance with parasitic inductances. Engineers should simulate the complete switching node behavior rather than relying solely on datasheet values, as layout parasitics often dominate real-world EMI characteristics more than intrinsic device parameters.
What role does the TO-247AD package play in the thermal and mechanical reliability of the LFUSCD16065B, and how does it compare to surface-mount alternatives?
The TO-247AD package provides robust thermal conductivity through a large copper tab and three-terminal construction suitable for bolted mounting or solder attachment to heat sinks. Its through-hole form factor ensures strong mechanical stability under vibration and thermal cycling, making it ideal for rugged industrial environments. Compared to surface-mount packages like TO-263, the TO-247AD offers superior heat spreading capability and lower thermal resistance when properly interfaced with a heatsink. For the LFUSCD16065B, this supports sustained operation at 16A while maintaining junction temperatures below 175°C, even in compact enclosures where airflow is limited. Surface-mount variants might reduce footprint but could compromise long-term reliability in high-power scenarios.
Given the LFUSCD16065B’s maximum junction temperature of 175°C, how does this compare to traditional silicon diodes, and what implications does it have for derating strategies?
Silicon Schottky diodes typically have junction temperature limits around 150°C, whereas the LFUSCD16065B operates reliably up to 175°C—a 25°C improvement. This allows engineers to either run hotter without derating or push performance margins in thermally constrained designs. However, derating should still be applied based on actual measured case temperatures and airflow conditions. A conservative approach might assume a 80°C rise above ambient, limiting operation to 95°C junction temperature, thus preserving margin against transient spikes and aging effects. The extended thermal headroom enables more aggressive packaging or smaller heatsinks, improving system density without sacrificing safety factors.
Are there any notable differences between the LFUSCD16065B and substitute models such as IDW16G65C5XKSA1 in terms of electrical characteristics and application suitability?
Substitute models like IDW16G65C5XKSA1 (from Infineon) share core SiC Schottky attributes including zero reverse recovery time and similar voltage/current ratings. However, subtle variations exist in forward voltage vs. current curve shape, package compatibility, and manufacturer-specific testing protocols. While both support 16A and 650V, the exact Vf drop at 16A may differ slightly—critical for efficiency calculations—and pinouts must be verified. The LFUSCD16065B uses a TO-247AD, while some substitutes come in D²PAK or press-fit formats, affecting mechanical integration. Always validate thermal performance and switching behavior in target circuits before substituting, even when ratings appear equivalent.
How does the Moisture Sensitivity Level (MSL) of 1 for the LFUSCD16065B impact storage and handling in automated assembly lines?
With an MSL rating of 1, the LFUSCD16065B is considered moisture-insensitive under normal storage conditions. This means it does not require baking prior to reflow soldering or special humidity-controlled environments before placement. Manufacturers can handle these components directly after unpackaging without pre-drying steps, streamlining logistics and reducing inventory complexity. This characteristic benefits high-volume production where lead times and material handling efficiency are critical. Nevertheless, standard ESD precautions still apply due to the sensitive nature of semiconductor devices, regardless of MSL classification.
What considerations arise when integrating the LFUSCD16065B into automotive-grade power electronics requiring AEC-Q101 qualification?
Although the LFUSCD16065B is RoHS3 compliant and widely used in industrial applications, it is not inherently qualified to AEC-Q101 unless explicitly stated by the manufacturer. Automotive designers must verify whether Littelfuse provides such certification for this part number. If not, alternative sourcing or requalification efforts may be necessary. Even if the component performs well under lab stress tests, automotive standards demand rigorous validation across temperature cycling, power cycling, and fault injection scenarios. The TO-247AD’s robustness supports mechanical endurance, but electrical reliability under extended mission profiles must be independently confirmed through supplier documentation or third-party testing.
How should the absence of a defined series designation affect selection logic when comparing the LFUSCD16065B to other Littelfuse SiC diodes?
The lack of a formal series label implies that the LFUSCD16065B may represent a discrete product rather than part of a coordinated family with consistent pinout, marking, or packaging evolution. When selecting alternatives, engineers should prioritize cross-reference data sheets over assumed continuity. Key parameters—such as Vf vs. If, Cj vs. Vr, and package dimensions—should be compared directly. For instance, the LFUSCD16065B’s 1.7 V drop at 16A might differ from another “G65C5” variant if they belong to different product lines. Therefore, functional equivalence requires empirical verification, not reliance on naming conventions alone.
What is the expected lifetime degradation behavior of the LFUSCD16065B under continuous 16A operation at elevated junction temperatures, and how does SiC mitigate failure modes?
Unlike silicon diodes prone to catastrophic breakdown from avalanche events or soft shorting due to bond wire lift-off, SiC-based diodes like the LFUSCD16065B exhibit superior resilience to thermal runaway and electromigration. Under continuous 16A operation, the dominant failure mechanisms shift toward gradual increases in leakage current or slight rises in forward voltage—not sudden failures. Operating near the 175°C limit accelerates aging, but SiC’s wide bandgap provides inherent tolerance to high electric fields and temperatures. Still, proactive monitoring of Vf drift and leakage trends remains advisable in life-critical applications, as accelerated aging tests indicate minimal performance decay over tens of thousands of hours at rated conditions.
In what ways does the ECCN code EAR99 simplify international procurement of the LFUSCD16065B compared to controlled components?
Classified under EAR99, the LFUSCD16065B falls outside U.S. export control regulations for dual-use technologies, meaning it generally does not require licensing for shipment to most countries. This facilitates global sourcing without compliance overhead, benefiting multinational teams managing supply chains across regions with strict trade policies. However, end-use restrictions may still apply in certain jurisdictions, so users should consult local regulations. For engineering teams prioritizing geopolitical risk mitigation, EAR99 status offers logistical flexibility, especially when procuring from non-US manufacturers without navigating ITAR or Wassenaar Arrangement complexities.
How does the combination of 0 ns reverse recovery time and 520 pF capacitance influence snubber circuit design when using the LFUSCD16065B in a half-bridge topology?
The near-zero reverse recovery time reduces di/dt stresses during commutation, lowering the need for aggressive RC snubbers that would otherwise dampen ringing caused by parasitic inductance interacting with junction capacitance. However, the 520 pF capacitance, combined with stray inductance in the commutation loop, can still generate high-frequency oscillations. Snubber networks should be optimized for damping these residual resonances rather than suppressing reverse recovery spikes. Simulation tools modeling the complete commutation path—including PCB parasitics—are essential to minimize voltage overshoots and EMI emissions, ensuring safe operation near the 650 V blocking limit.
What are the implications of the HTSUS code 8541.10.0080 for customs clearance and tariff classification of the LFUSCD16065B in North American markets?
Assigned HTSUS 8541.10.0080, the LFUSCD16065B is classified as an active semiconductor device (diode), specifically excluding LEDs. This designation typically carries moderate import duties depending on country-specific agreements—often lower for finished assemblies than raw components. Importers leveraging this classification benefit from predictable duty rates under USMCA, avoiding higher tariffs associated with broader categories like “electronic integrated circuits.” Accurate declaration using this code streamlines customs processing and avoids penalties from misclassification, supporting efficient supply chain operations for OEMs manufacturing in or exporting to the United States, Canada, or Mexico.
When evaluating the LFUSCD16065B versus IGBT-based freewheeling solutions, what trade-offs emerge in terms of efficiency, cost, and thermal complexity?
Replacing IGBTs with the LFUSCD16065B in freewheeling roles eliminates turn-off losses and simplifies gate drive requirements, yielding higher efficiency—especially at light loads—due to lower Vf and no tail current. However, the diode’s fixed conduction drop introduces conduction losses that scale linearly with current, whereas IGBTs offer adjustable saturation characteristics. Cost-wise, SiC diodes like the LFUSCD16065B remain premium compared to silicon MOSFETs or IGBTs, but savings in heatsink size and cooling infrastructure often offset this in high-power designs. Thermal complexity decreases because no gate drive isolation is needed, but precise timing alignment becomes crucial to avoid shoot-through in synchronous rectification schemes.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD16065B

Product Attribute LFUSCD20065B LFUSCD06065A LFUSCD10065A LFUSCD08065A
Part Number LFUSCD20065B LFUSCD06065A LFUSCD10065A LFUSCD08065A
Manufacturer Littelfuse Inc. Hamlin / Littelfuse Littelfuse Inc. Littelfuse Inc.
Current - Reverse Leakage @ Vr - - - -
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Speed - - - -
Technology - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Average Rectified (Io) - - - -
Capacitance @ Vr, F - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Reverse Recovery Time (trr) - - - -
Operating Temperature - Junction - - - -

LFUSCD16065B Datasheet PDF

Download LFUSCD16065B pdf datasheets and Littelfuse Inc. documentation for LFUSCD16065B - Littelfuse Inc..

Datasheets
LFUSCD16065B Datasheet.pdf

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Littelfuse Inc.

LFUSCD16065B

Littelfuse Inc.
98D-LFUSCD16065B

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