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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - ArraysLFUSCD20120B
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LFUSCD20120B - Littelfuse Inc.

Manufacturer Part Number
LFUSCD20120B
Manufacturer
Littelfuse
Allelco Part Number
98D-LFUSCD20120B
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,860 pcs available, New & Original
Parts Description
DIODE SC SCHOTKY 1200V 10A TO247
Package
TO-247AD
Data sheet
LFUSCD20120B.pdf
RoHs Status
ROHS3 Compliant
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In stock: 4860

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Specifications

LFUSCD20120B Tech Specifications
Littelfuse Inc. - LFUSCD20120B technical specifications, attributes, parameters and parts with similar specifications to Littelfuse Inc. - LFUSCD20120B

Product Attribute Attribute Value
Manufacturer Littelfuse
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-247AD
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Product Attribute Attribute Value
Package / Case TO-247-3
Package Tube
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Diode Configuration 1 Pair Common Cathode
Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Current - Average Rectified (Io) (per Diode) 10A (DC)

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key electrical characteristics of the LFUSCD20120B SiC Schottky diode array that influence high-frequency switching performance in power converter designs?
The LFUSCD20120B exhibits a reverse recovery time of less than 500 nanoseconds and a forward voltage drop (Vf) of 1.7 V at 20 A, which significantly reduces switching losses compared to silicon-based diodes. Its low leakage current of 250 µA at 1200 V supports efficiency in high-voltage applications. These attributes make it suitable for resonant or hard-switching topologies where fast commutation minimizes conduction and switching energy dissipation.
How does the LFUSCD20120B compare to the STPSC30H12CWL in terms of current rating and thermal performance when used in parallel configurations for 10 kW three-phase inverter applications?
While both devices are 1200 V SiC Schottky diodes, the LFUSCD20120B is rated for 10 A per diode, whereas the STPSC30H12CWL supports up to 30 A. In a 10 kW inverter requiring balanced current sharing, using the LFUSCD20120B would necessitate three parallel branches per phase leg to match the current capacity of a single STPSC30H12CWL, increasing layout complexity and risk of current imbalance due to parasitic inductance differences.
What are the implications of mounting the LFUSCD20120B in a TO-247AD package on PCB thermal design and mechanical stability during soldering processes?
The TO-247AD package provides robust mechanical attachment via a center tab and two outer leads, enabling direct heatsinking with standard mounting hardware. However, its large footprint increases thermal resistance unless properly managed with thermal interface material and adequate copper area on the PCB. During reflow or wave soldering, the component’s mass may require controlled thermal profiles to prevent joint fatigue or warpage.
Can the LFUSCD20120B be safely operated at junction temperatures approaching 175°C in continuous automotive-grade power modules without compromising long-term reliability?
Yes, the device is specified for junction operation up to 175°C, aligning with automotive and industrial reliability standards. However, derating based on ambient temperature, power cycling frequency, and switching frequency is essential. Prolonged exposure near maximum temperature accelerates degradation mechanisms such as bond wire lift-off or metallization migration, so thermal management must ensure sustained operation well below this threshold under worst-case conditions.
What trade-offs exist between using the LFUSCD20120B and discrete SiC Schottky diodes like C4D10120D when designing compact bidirectional rectifiers for solar microinverters?
The LFUSCD20120B integrates two common-cathode diodes into one package, reducing board space and inter-device skew, which benefits high-frequency bidirectional operation. In contrast, discrete solutions like the C4D10120D require external layout symmetry and balancing networks. Although the array may introduce minor mismatches due to internal coupling, its integrated design often improves electromagnetic compatibility and simplifies thermal routing in space-constrained microinverter layouts.
How should the LFUSCD20120B be evaluated for partial discharge immunity in high-altitude or polluted environments typical of grid-tie photovoltaic installations?
Partial discharge risk increases with surface contamination and reduced air pressure. Since the LFUSCD20120B uses a ceramic-insulated TO-247AD package with high creepage distance, it offers better insulation integrity than plastic-packaged alternatives. However, conformal coating and proper clearance-to-ground spacing remain critical. Testing per IEC 61180 or equivalent standards under simulated environmental stress can validate suitability for such deployments.
What considerations apply when substituting the LFUSCD20120B with the FFSH40120ADN-F155 in a motor drive application requiring 15 A peak current handling?
The FFSH40120ADN-F155 has a higher nominal current capability (40 A), but its forward voltage and switching characteristics may differ slightly from the LFUSCD20120B due to manufacturing process variations. Substitution requires verifying gate-drive compatibility, thermal performance at elevated currents, and ensuring no resonance issues arise from timing mismatches in antiparallel configurations. Thermal modeling and empirical validation are recommended before full implementation.
What role does the MSL 1 classification play in the storage and handling lifecycle of the LFUSCD20120B for high-volume production lines?
With an Moisture Sensitivity Level of 1, the LFUSCD20120B is not sensitive to moisture absorption and can be stored indefinitely under normal dry conditions. This simplifies inventory management and reduces the need for bake-out procedures prior to assembly, improving throughput and lowering operational costs in automated manufacturing environments.
How does the RoHS3 compliance of the LFUSCD20120B affect its use in EU-market renewable energy systems under current regulatory frameworks?
RoHS3 compliance ensures the LFUSCD20120B meets updated restrictions on hazardous substances, including stricter limits on certain phthalates and mercury-containing compounds. This facilitates market access for European solar and wind inverters without additional testing or documentation, supporting faster certification cycles under CE marking requirements.
What are the consequences of exceeding the 250 µA reverse leakage specification at elevated temperatures when using the LFUSCD20120B in passive front-end rectifiers?
Exceeding 250 µA leakage at 1200 V due to temperature rise contributes to standby power loss and reduces system efficiency, especially in grid-connected applications with continuous off-state periods. Over time, this can lead to thermal runaway if heat generation from leakage current is not dissipated, underscoring the importance of maintaining junction temperatures below 150°C in practice.
In what scenarios would the LFUSCD20120B offer superior performance over traditional silicon FRDs despite its higher unit cost?
The LFUSCD20120B excels in applications above 600 V where silicon FRDs suffer from high reverse recovery charges, causing EMI and efficiency penalties. In 3.3 kV PV string inverters or battery charger boost stages operating at >100 kHz, the LFUSCD20120B’s negligible tail current and fast switching reduce losses by 30–50% compared to silicon counterparts, justifying cost premium through improved lifetime energy yield.
How does the ECCN classification EAR99 impact global supply chain logistics for sourcing LFUSCD20120B components?
Classified under EAR99, the LFUSCD20120B is not subject to U.S. export licensing requirements, facilitating international procurement and distribution without complex compliance steps. This simplifies logistics for manufacturers in Asia, Europe, and North America, reducing delays associated with dual-use technology assessments.
What layout precautions are necessary when placing the LFUSCD20120B near high dv/dt nodes to avoid false triggering or noise coupling?
Due to its low capacitance (typically <25 pF), the LFUSCD20120B is less prone to capacitive coupling than other rectifiers, but placement near fast-switching MOSFETs still demands care. Minimizing loop area between anode and cathode terminals, using ground planes, and avoiding adjacent signal traces help suppress radiated interference and ensure stable operation in noisy environments.
Why might engineers prefer the LFUSCD20120B over two individual 1200 V Si IGBT freewheeling diodes in a regenerative braking circuit for industrial drives?
Unlike IGBTs used as freewheel diodes, the LFUSCD20120B provides symmetrical bidirectional conduction with zero reverse recovery spikes, eliminating shoot-through risks during rapid direction changes. Its Schottky structure also avoids latch-up and enables soft-recovery behavior, enhancing reliability in high-power regenerative systems where frequent commutation occurs.
What impact do variations in solder joint quality have on the LFUSCD20120B’s thermal impedance and long-term power cycling endurance?
Poor solder joints increase thermal resistance, raising junction temperatures under load and accelerating wear-out mechanisms such as die attach delamination. For the LFUSCD20120B, consistent mechanical contact between the case and heatsink is vital—especially under thermal cycling—to maintain rated performance and extend service life beyond 1 million cycles in harsh environments.
How does the HTSUS code 8541.10.0080 influence customs valuation and import duties for shipments containing LFUSCD20120B diodes?
This Harmonized Tariff Schedule code classifies the LFUSCD20120B as a semiconductor device under subheading 8541.10.0080, typically subject to moderate tariffs depending on country of origin. Accurate declaration using this code ensures correct duty assessment and avoids penalties during cross-border logistics, particularly important for just-in-time supply chains in electronics manufacturing hubs.

Parts with Similar Specifications

The three parts on the right have similar specifications to Littelfuse Inc. LFUSCD20120B

Product Attribute LFUSCD30120B GSXD030A006S1-D3 SDURB1620CT IRKD56/06A
Part Number LFUSCD30120B GSXD030A006S1-D3 SDURB1620CT IRKD56/06A
Manufacturer Littelfuse Inc. SemiQ SMC Diode Solutions Vishay General Semiconductor - Diodes Division
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Voltage - DC Reverse (Vr) (Max) - - - -
Speed - - - -
Technology - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - Junction - - - -
Series - - - -
Current - Reverse Leakage @ Vr - - - -
Current - Average Rectified (Io) (per Diode) - - - -
Diode Configuration - - - -

LFUSCD20120B Datasheet PDF

Download LFUSCD20120B pdf datasheets and Littelfuse Inc. documentation for LFUSCD20120B - Littelfuse Inc..

Datasheets
LFUSCD20120B Datasheet.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

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In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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Electrostatic Discharge Protection and Handling

All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.


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Littelfuse Inc.

LFUSCD20120B

Littelfuse Inc.
98D-LFUSCD20120B

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