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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIRFD113
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IRFD113 - Harris Corporation

Manufacturer Part Number
IRFD113
Manufacturer
Harris Corporation
Allelco Part Number
32D-IRFD113
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
60,310 pcs available, New & Original
Parts Description
MOSFET N-CH 60V 800MA 4DIP
Package
4-HVMDIP
Data sheet
-
RoHs Status
 
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In stock: 60310

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Specifications

IRFD113 Tech Specifications
Harris Corporation - IRFD113 technical specifications, attributes, parameters and parts with similar specifications to Harris Corporation - IRFD113

Product Attribute Attribute Value
Manufacturer Harris Corporation
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-HVMDIP
Series -
Rds On (Max) @ Id, Vgs 800mOhm @ 800mA, 10V
Power Dissipation (Max) 1W (Tc)
Package / Case 4-DIP (0.300", 7.62mm)
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the IRFD113 compare to modern MOSFETs in terms of Rds(on) at 800mA and what implications does this have for power efficiency in low-voltage switching applications?
The IRFD113 exhibits a maximum Rds(on) of 800mΩ at Id = 800mA and Vgs = 10V, which is relatively high by contemporary standards. For comparison, modern logic-level N-channel MOSFETs like the IRLZ44N achieve Rds(on) values below 20mΩ under similar conditions. This 40x higher on-resistance results in significantly increased conduction losses—approximately 0.64W of power dissipation in the IRFD113 at full load compared to less than 0.01W in a modern alternative. In battery-powered or thermally constrained designs, this translates to reduced efficiency and potential thermal derating even at moderate current levels.
What are the key limitations of using the IRFD113 in high-speed digital switching circuits due to its gate charge and input capacitance characteristics?
With a gate charge (Qg) of 7nC at Vgs = 10V and an input capacitance (Ciss) of 200pF at Vds = 25V, the IRFD113 has slower switching capabilities compared to newer devices with optimized Qg and lower Ciss. This results in longer turn-on and turn-off times when driven by standard CMOS or TTL logic levels, increasing switching losses and electromagnetic interference. In PWM applications above ~100kHz, these parasitics can degrade overall efficiency and introduce ringing if not properly compensated with gate resistance.
Can the IRFD113 be safely used in continuous conduction mode without exceeding its 1W power dissipation rating, assuming a junction-to-case thermal resistance (RθJC) of 60°C/W?
Yes, but only under specific thermal conditions. At Id = 800mA and Rds(on) = 0.8Ω, conduction loss is 0.512W. With no additional losses from switching or voltage drop, total power remains within the 1W limit. However, if ambient temperature exceeds 50°C, even minimal heatsinking becomes critical due to the narrow margin between operating power and maximum ratings. Without adequate case cooling, junction temperature may exceed 150°C during sustained operation.
Why might engineers avoid substituting the IRFD113 with surface-mount alternatives despite functional equivalence, given its through-hole packaging?
While electrical parameters may match, through-hole mounting like the 4-HVMDIP package of the IRFD113 provides superior mechanical stability and heat sinking capability compared to SOIC or SOT-223 packages. In industrial environments subject to vibration or thermal cycling, surface-mount variants may suffer solder joint fatigue. Additionally, legacy PCB layouts designed around DIP footprints cannot accommodate modern SMT parts without board redesign, increasing cost and development time.
How does the threshold voltage (Vgs(th)) of 4V max at 250µA affect gate drive requirements in 5V microcontroller-based switching circuits?
A Vgs(th) of up to 4V means the IRFD113 will begin turning on near the minimum guaranteed threshold, but achieving low Rds(on) requires Vgs significantly above this—typically 10V as specified. In 5V systems, the gate-source voltage may only reach 4–5V, resulting in higher Rds(on) than optimal and increased conduction losses. This necessitates either level-shifting circuitry or acceptance of degraded performance, unlike logic-level MOSFETs rated for operation at 4.5V Vgs.
Is the IRFD113 suitable for use in linear amplifier configurations, and why or why not?
No, it is not recommended. Linear operation requires the transistor to operate in saturation with controlled drain current regulation, but the IRFD113's relatively high Rds(on) and limited transconductance make precise gain control difficult. Moreover, power dissipation in the device becomes significant when handling large output swings, potentially violating the 1W continuous rating unless heavily heatsinked. Switch-mode topologies are far more efficient and reliable for this part’s intended application.
What environmental and regulatory concerns arise from deploying the IRFD113 in new consumer electronics projects today?
The IRFD113 is marked as RoHS non-compliant, meaning it contains restricted substances such as lead in excess of EU directives. Deploying it in new consumer products risks non-compliance with global regulations including REACH and WEEE. Additionally, as an obsolete component, sourcing may rely on surplus stock with unknown shelf life, increasing risk of failure due to degraded packaging or semiconductor properties over time.
How should layout considerations differ when replacing the IRFD113 in a legacy design versus adopting a modern replacement?
Legacy designs often assume the IRFD113’s larger DIP footprint allows for generous trace spacing and easy access during testing. Modern replacements—especially in smaller packages—require careful attention to loop inductance, especially in high-current paths and gate drive circuits. Parasitic inductance in traces can exacerbate voltage spikes and ringing; thus, even with equivalent electrical specs, layout must be re-evaluated to maintain EMI performance and reliability.

Parts with Similar Specifications

The three parts on the right have similar specifications to Harris Corporation IRFD113

Product Attribute IRFD113PBF IRFD113 IRFD121 IRFD110
Part Number IRFD113PBF IRFD113 IRFD121 IRFD110
Manufacturer Vishay Siliconix Vishay Siliconix Harris Corporation Vishay Siliconix
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
FET Type - - - -
Vgs(th) (Max) @ Id - - - -
FET Feature - - - -
Power Dissipation (Max) - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Continuous Drain (Id) @ 25°C - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Technology - - - -
Vgs (Max) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Rds On (Max) @ Id, Vgs - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Series - - - -
Drain to Source Voltage (Vdss) - - - -

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Region Country Logistic Time(Day)
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Brazil 7
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United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
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Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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IRFD113

Harris Corporation
32D-IRFD113

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