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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFR24N100
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IXFR24N100 - IXYS

Manufacturer Part Number
IXFR24N100
Manufacturer
IXYS Corporation
Allelco Part Number
32D-IXFR24N100
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
2,296 pcs available, New & Original
Parts Description
MOSFET N-CH 1KV 22A ISOPLUS247
Package
ISOPLUS247™
Data sheet
IXFR24N100.pdf

Datasheets

IXFR24N100.pdf

PCN Obsolescence/ EOL

Mult Devices OBS 24/Feb/2014.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 2296
  • Unit Price: $3.428
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $3.428 $3.43
210+ $1.368 $287.28
510+ $1.323 $674.73
990+ $1.30 $1,287.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IXFR24N100 Tech Specifications
IXYS - IXFR24N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFR24N100

Product Attribute Attribute Value
Manufacturer IXYS Corporation
Vgs(th) (Max) @ Id 5.5V @ 8mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package ISOPLUS247™
Series HiPerFET™
Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V
Power Dissipation (Max) 416W (Tc)
Package / Case TO-247-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 267 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Base Product Number IXFR24

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical trade-offs when using the IXFR24N100 in a high-power switching application operating near its 1000 V drain-to-source rating?
The IXFR24N100’s 1000 V Vdss allows reliable operation in applications like industrial inverters or PFC stages, but designers must account for its 390 mΩ Rds(on) at 10 V Vgs, which results in conduction losses of approximately 10.3 W at 5 A continuous drain current. With a maximum power dissipation of 416 W (Tc), thermal management becomes critical—especially since junction-to-case thermal resistance (RθJC) is not explicitly stated but implied through the ISOPLUS247™ package’s design. Operation near full voltage stress increases susceptibility to voltage transients; thus, snubber networks or active clamping are often required to avoid exceeding the ±20 V Vgs(max) limit during switching events.
How does the gate charge (Qg) of the IXFR24N100 influence driver selection and switching losses in hard-switching topologies?
The IXFR24N100 exhibits a maximum gate charge of 267 nC at 10 V Vgs, which directly impacts gate driver current requirements and switching transition times. For example, a 1 A gate driver can achieve a theoretical turn-on time of ~267 ns, but in practice, parasitic inductance and Miller plateau effects extend this duration. In hard-switching applications such as bridge converters, this contributes significantly to switching losses—particularly at frequencies above 20 kHz. Engineers must balance switching speed with EMI and overshoot risks, often selecting drivers capable of peak currents of 2–3 A to minimize transition losses while staying within the ±20 V gate drive window.
Can the IXFR24N100 be paralleled effectively for higher current handling, and what layout considerations are essential?
While the IXFR24N100 supports 22 A continuous drain current at 25°C case temperature, paralleling multiple devices may be necessary for higher loads. However, due to its positive temperature coefficient of Rds(on), thermal runaway is less likely, aiding current sharing stability. Critical layout practices include symmetrical gate drive traces, matched source inductance, and a common heatsink with low thermal resistance to maintain uniform junction temperatures. Unequal parasitics can lead to dynamic current imbalance during switching transitions, so Kelvin connections for gate drive and tight loop areas for power paths are strongly recommended.
How does the input capacitance (Ciss) of the IXFR24N100 affect high-frequency performance and what are the implications for gate drive power?
The IXFR24N100 has a maximum Ciss of 8700 pF at 25 V Vds, which, combined with its high Qg, results in significant gate drive power requirements at elevated frequencies. At 50 kHz switching frequency, the gate drive power alone can exceed 1.3 W (P = Qg × Vgs × f), not including losses from output capacitance (Coss) and reverse transfer (Crss). This necessitates robust gate driver supply design, especially in isolated topologies. Additionally, the large Ciss increases sensitivity to Miller-induced false turn-on, requiring either negative gate turn-off bias or careful dead-time optimization.
What are the reliability implications of operating the IXFR24N100 near its maximum junction temperature of 150°C in continuous conduction mode?
Operating the IXFR24N100 at or near 150°C TJ accelerates degradation mechanisms such as bond wire fatigue and oxide layer stress, particularly under thermal cycling. While the device is rated for this temperature, long-term reliability is enhanced by maintaining TJ below 125°C through effective heatsinking. The ISOPLUS247™ package improves thermal performance over standard TO-247 by reducing interface resistance, but thermal interface material (TIM) selection and mounting torque still play decisive roles. Continuous operation at high temperatures also increases leakage current, which may affect standby power in off-state conditions.
How does the IXFR24N100 compare to the IXFR32N100P in terms of conduction loss and thermal performance for a 15 A load in a motor drive application?
The IXFR24N100, with an Rds(on) of 390 mΩ at 10 V Vgs, exhibits higher conduction losses (~8.8 W at 15 A) compared to the IXFR32N100P, which typically offers lower Rds(on) (e.g., ~280 mΩ). This results in approximately 2.1 W less conduction loss for the IXFR32N100P under the same conditions. However, the IXFR24N100’s ISOPLUS247™ package provides better thermal coupling to the heatsink, potentially offsetting some of this difference in real-world thermal resistance. For space-constrained designs where package compatibility is fixed, the lower Rds(on) of the IXFR32N100P may justify its use despite higher cost.
What design precautions are necessary to protect the IXFR24N100 from voltage overshoot during inductive turn-off events?
During inductive switching, the IXFR24N100’s 1000 V rating provides margin, but parasitic inductance in the commutation loop can generate voltage spikes exceeding this threshold. A well-designed RC snubber across drain-source or use of a TVS diode rated below 1000 V (e.g., 900 V clamping) helps suppress transients. Additionally, minimizing loop area in the power path and using low-inductance busbar layouts reduce di/dt-induced overshoot. The device’s robust avalanche energy capability (not explicitly rated but implied by HiPerFET™ design) offers some inherent protection, but relying solely on this can compromise long-term reliability.
How does the threshold voltage (Vgs(th)) of the IXFR24N100 influence turn-on behavior in low-duty-cycle or burst-mode applications?
The IXFR24N100 has a maximum Vgs(th) of 5.5 V at 8 mA, which is relatively high for a 1000 V MOSFET. In low-duty-cycle or burst-mode operation, such as in resonant converters or standby power supplies, this requires ensuring that the gate drive voltage remains well above threshold throughout the entire pulse to avoid partial conduction. A 10 V Vgs drive ensures full enhancement (Rds(on) specified at 10 V), but marginal drive voltages (e.g., 8 V) may result in significantly higher on-resistance and localized heating. Gate drive rise time must also be fast enough to minimize time spent in the linear region.
Is the IXFR24N100 suitable for zero-voltage switching (ZVS) applications, and how do its output capacitance characteristics affect resonant tank design?
The IXFR24N100 can be used in ZVS topologies such as LLC converters, but its output capacitance (Coss)—though not directly specified—can be estimated from Ciss and typical MOSFET capacitance ratios. High Coss at low Vds stores significant energy that must be managed during dead times. In resonant designs, this stored energy can interfere with zero-voltage transition if not properly accounted for in timing calculations. The device’s low Crss (implied by HiPerFET™ optimization) reduces Miller feedback, aiding control stability, but precise characterization of Coss vs. Vds is recommended for accurate resonant frequency tuning.
What are the key differences between the IXFR24N100 and STW20N95K5 when selecting a MOSFET for a 900 V DC-link inverter application?
The IXFR24N100 offers a higher voltage rating (1000 V vs. 950 V) and greater continuous current (22 A vs. 20 A), providing additional safety margin in 900 V systems where voltage transients may occur. However, the STW20N95K5 typically features lower gate charge (~180 nC) and faster switching, making it more efficient in high-frequency hard-switching applications. The IXFR24N100’s ISOPLUS247™ package also offers superior thermal performance compared to the standard TO-247 of the STW20N95K5, which can be decisive in thermally constrained environments. Selection depends on whether voltage headroom or switching speed is the dominant design driver.
How should the IXFR24N100 be mounted to achieve optimal thermal performance in a forced-air cooling environment?
To maximize heat extraction from the IXFR24N100, the ISOPLUS247™ package should be mounted on a flat, anodized aluminum or copper heatsink with a thermal interface material (e.g., silicone pad or phase-change compound) rated for >5 W/mK. Mounting torque should follow manufacturer specifications (typically 0.6–1.0 Nm) to ensure uniform pressure without cracking the ceramic insulator. In forced-air cooling, airflow should be directed perpendicular to the fin structure, and component spacing should allow for unimpeded convection. Thermal vias or direct-bonded copper substrates can further reduce thermal resistance in high-density designs.
What derating guidelines apply to the IXFR24N100’s current and power ratings when operating above 25°C case temperature?
The IXFR24N100’s 22 A continuous drain current and 416 W power dissipation are specified at 25°C case temperature. As case temperature increases, both parameters must be linearly derated. For example, at 100°C Tc, power dissipation should be reduced to approximately 166 W (assuming a typical derating factor of 2.5 W/°C above 25°C). Similarly, current capability decreases due to increased Rds(on) with temperature—at 125°C TJ, Rds(on) can rise by 50–70%, effectively reducing safe operating current by 20–30% depending on cooling conditions. Always consult the Safe Operating Area (SOA) curve for pulsed conditions.

Parts with Similar Specifications

The three parts on the right have similar specifications to IXYS IXFR24N100

Product Attribute IXFR24N100Q3 IXFR26N100P IXFR21N100Q IXFR20N100P
Part Number IXFR24N100Q3 IXFR26N100P IXFR21N100Q IXFR20N100P
Manufacturer IXYS IXYS IXYS IXYS
Vgs (Max) - - - -
Rds On (Max) @ Id, Vgs - - - -
FET Type - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Technology - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Vgs(th) (Max) @ Id - - - -
Drain to Source Voltage (Vdss) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On) - - - -
Power Dissipation (Max) - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Current - Continuous Drain (Id) @ 25°C - - - -
FET Feature - - - -
Series - - - -

IXFR24N100 Datasheet PDF

Download IXFR24N100 pdf datasheets and IXYS documentation for IXFR24N100 - IXYS.

Datasheets
IXFR24N100.pdf
PCN Obsolescence/ EOL
Mult Devices OBS 24/Feb/2014.pdf

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IXFR24N100 Image

IXFR24N100

IXYS
32D-IXFR24N100

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