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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFT70N20Q3
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IXFT70N20Q3 - IXYS

Manufacturer Part Number
IXFT70N20Q3
Manufacturer
IXYS Corporation
Allelco Part Number
98D-IXFT70N20Q3
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
29,860 pcs available, New & Original
Parts Description
MOSFET N-CH 200V 70A TO268
Package
TO-268AA
Data sheet
IXFT70N20Q3.pdf

Datasheets

IXFx70N20Q3.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 29860
  • Unit Price: $2.258
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $2.258 $2.26
210+ $0.902 $189.42
510+ $0.872 $444.72
990+ $0.856 $847.44
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IXFT70N20Q3 Tech Specifications
IXYS - IXFT70N20Q3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT70N20Q3

Product Attribute Attribute Value
Manufacturer IXYS Corporation
Vgs(th) (Max) @ Id 6.5V @ 4mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-268AA
Series HiPerFET™, Q3 Class
Rds On (Max) @ Id, Vgs 40mOhm @ 35A, 10V
Power Dissipation (Max) 690W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Base Product Number IXFT70

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the IXFT70N20Q3’s Rds(on) of 40mΩ at 35A and 10V compare to alternative N-channel MOSFETs in the same voltage class, and what implications does this have for conduction loss in a 50A continuous current application?
At 40mΩ with a Vgs of 10V, the IXFT70N20Q3 achieves low on-resistance that is competitive among 200V-rated N-channel MOSFETs. For a 50A continuous drain current, conduction losses are calculated as I² × Rds(on), yielding approximately 10W (50² × 0.04). This is relatively efficient compared to devices with higher Rds(on), especially those not optimized for high-current surface-mount packages. The Q3 technology enhances switching performance, but conduction efficiency remains critical in high-duty-cycle applications.
What thermal considerations should be addressed when operating the IXFT70N20Q3 at its maximum continuous drain current of 70A in a TO-268AA package with natural convection cooling?
Operating at 70A with 40mΩ Rds(on) generates approximately 196W of power dissipation under ideal conditions, though actual load may reduce this. The TO-268AA package has a junction-to-case thermal resistance (RθJC) typically around 0.3°C/W for direct tab mounting. Without forced airflow, ambient temperatures above 50°C could lead to junction temperatures exceeding 150°C TJ limit. Proper heatsinking and thermal interface material are essential to maintain safe operation near rated currents.
How does the gate charge (Qg) of 67nC @ 10V influence driver selection and switching frequency limits when using the IXFT70N20Q3 in a hard-switched buck converter?
With 67nC of gate charge, the IXFT70N20Q3 requires significant drive current to switch quickly. At 10V gate drive, typical gate drivers must source or sink over 3A to achieve sub-100ns transitions. In a 200kHz buck converter, switching losses become noticeable; assuming 50ns turn-on/off time, total switching energy per cycle is roughly 0.5 × Qg × Vgs × 2 = 6.7µJ. At 200kHz, this adds ~1.34W switching loss alone, which affects overall efficiency and thermal budget.
Can the IXFT70N20Q3 be safely used in a half-bridge configuration without additional protection circuitry, given its Vgs(max) of ±20V and threshold voltage of 6.5V?
While the ±20V Vgs rating provides margin against voltage spikes, the 6.5V threshold means the device may not fully enhance until Vgs exceeds this value. In a half-bridge, shoot-through can occur if both devices are driven simultaneously into linear region. Gate drivers should ensure dead-time insertion and use negative bias during turn-off to prevent parasitic turn-on. The IXFT70N20Q3 benefits from Q3 technology’s improved avalanche ruggedness, but external gate control remains critical for reliability.
What impact does the input capacitance (Ciss) of 3150pF @ 25V have on high-frequency switching performance when using the IXFT70N20Q3 in a resonant LLC converter?
A Ciss of 3150pF indicates moderate input capacitance, contributing to Miller plateau effects during turn-off. This increases effective gate charge and slows transition times, potentially degrading ZVS (zero-voltage switching) margins in an LLC topology. At frequencies above 200kHz, the capacitive reactance decreases, increasing AC coupling into the gate, which may necessitate higher drive strength or active gate driving techniques to maintain soft switching.
How does the IXFT70N20Q3’s power dissipation capability of 690W (Tc) compare to that of through-hole TO-247 equivalents in similar voltage and current ratings?
The 690W rating assumes direct attachment to a heatsink with minimal thermal resistance. While TO-247 variants often match this power handling, they may offer slightly better solder joint reliability and mechanical robustness. However, the TO-268AA used by the IXFT70N20Q3 enables surface mount automation and smaller PCB footprint. Thermal performance depends more on mounting than package type, provided adequate RθSA is maintained below 0.5°C/W.
What precautions should be taken when paralleling multiple IXFT70N20Q3 devices to increase current capacity in a motor drive application?
Paralleling MOSFETs requires careful attention to Rds(on) matching and gate drive symmetry. The IXFT70N20Q3’s 40mΩ Rds(on) varies slightly across production lots, leading to current imbalance. A common-source resistor or active gate balancing may be needed. Additionally, layout symmetry and trace inductance must be minimized to avoid dynamic current sharing issues during switching transients, which could stress one device disproportionately.
Is the IXFT70N20Q3 suitable for automotive-grade applications requiring AEC-Q101 qualification, and what environmental factors might affect its long-term reliability in such environments?
The IXFT70N20Q3 is RoHS3 compliant but not explicitly listed as AEC-Q101 qualified. Its MSL level 1 indicates tolerance to moisture, beneficial for harsh environments. However, automotive systems require extended temperature testing, vibration resilience, and failure mode analysis beyond standard industrial specs. Designers should verify supply chain documentation or contact IXYS for qualification status before use in safety-critical systems.
How does the HiPerFET™ Q3 series design philosophy benefit the IXFT70N20Q3 compared to earlier generations in terms of avalanche energy and short-circuit withstand time?
The Q3 generation improves avalanche energy handling due to enhanced cell density and optimized epitaxial layer structure. This allows the IXFT70N20Q3 to survive higher transient energy events common in inductive loads. Additionally, Q3 devices feature reduced internal inductance and improved thermal feedback, extending short-circuit withstand time to 10μs or more—critical for fault protection in power converters without external snubbers.
What layout practices minimize parasitic inductance and improve switching performance when implementing the IXFT70N20Q3 in a compact power stage?
Minimizing loop inductance involves placing input capacitors close to the drain and source terminals of the IXFT70N20Q3, using wide, short traces, and grounding the source directly under the device tab. The TO-268AA’s exposed tab acts as a heat spreader and ground plane, aiding EMI and reducing ESL. Kelvin connections for gate drive and symmetrical routing help suppress oscillations and improve dv/dt immunity.
Can the IXFT70N20Q3 operate reliably in a 48V battery management system where voltage transients occasionally exceed 250V?
The IXFT70N20Q3 has a Vdss rating of 200V, which is below 250V transients. Although some margin exists due to manufacturing tolerances, sustained exposure to overvoltage events risks dielectric breakdown. Clamping circuits or TVS diodes are recommended to limit drain-source voltage within safe limits. For 48V systems with anticipated transients, a 250V-rated MOSFET would provide greater design margin.
How does the threshold voltage (Vgs(th)) of 6.5V @ 4mA affect turn-on behavior when using logic-level gate drives in a microcontroller-controlled power stage with the IXFT70N20Q3?
A 6.5V threshold means the IXFT70N20Q3 does not fully enhance at 5V gate drive, resulting in higher Rds(on)—possibly 100mΩ or more—and increased conduction losses. To achieve the specified 40mΩ, a minimum of 10V Vgs is required. Logic-level designs should use gate boost circuitry or dedicated MOSFET drivers capable of 10–12V output to ensure optimal performance and thermal efficiency.
What role does the base product number IXFT70 play in selecting compatible components and ensuring supply continuity for designs using the IXFT70N20Q3?
The IXFT70 base number groups devices with similar electrical characteristics, enabling easier replacement or upgrade paths. It signals compatibility in terms of package, pinout, and core performance metrics. Designers can use this identifier to evaluate alternative part numbers within the series for cost or availability improvements while maintaining consistent thermal and electrical behavior in the system.
How does the IXFT70N20Q3 perform in terms of reverse recovery interaction when used as a synchronous rectifier alongside a body diode in a buck converter?
The body diode of the IXFT70N20Q3 exhibits typical minority carrier storage delays. During dead time, reverse recovery current flows through the diode, creating voltage spikes if not managed. The Q3 technology reduces this effect somewhat via improved cell design, but external Schottky diodes or active gate control with zero-current detection may still be necessary to minimize ringing and losses in high-efficiency synchronous rectification.
What are the implications of the TO-268AA package’s thermal pad design on solder reflow profiles during automated assembly of PCBs containing the IXFT70N20Q3?
The TO-268AA features an exposed metal tab requiring special attention during reflow. Solder wicking onto the tab can compromise thermal contact if not properly tented or filled. Manufacturers often recommend stencil printing with adequate aperture size and controlled paste volume. Preheating and soak phases help prevent thermal shock. Adherence to IPC-J-STD-001 guidelines ensures reliable joints without compromising electrical isolation.
How does the IXFT70N20Q3’s operating temperature range (-55°C to 150°C TJ) support deployment in aerospace or industrial automation environments?
The wide junction temperature range allows the IXFT70N20Q3 to function in extreme thermal conditions without derating beyond its ratings. In cold environments, reduced Rds(on) variation enhances stability, while high-temperature operation tests the robustness of packaging and silicon quality. Combined with RoHS compliance and REACH unaffected status, it supports use in regulated industrial and defense-related applications requiring long-term reliability.
What trade-offs exist between switching speed and efficiency when optimizing gate resistance for the IXFT70N20Q3 in a resonant converter?
Lower gate resistance reduces turn-on/off time, improving switching speed and potential for soft switching. However, it increases dv/dt and di/dt, risking electromagnetic interference and ringing. Higher gate resistance dampens oscillations but slows transitions, raising switching losses. Optimal resistance balances these effects—typically 2–5Ω for the IXFT70N20Q3—based on layout parasitics and desired EMI profile.
Why might a designer choose the IXFT70N20Q3 over a lower-cost alternative despite its premium pricing, particularly in mission-critical power systems?
The IXFT70N20Q3 offers proven reliability through Q3 technology, robust avalanche performance, and high-power handling in a standardized package. Its consistent Rds(on), low gate charge, and thermal characteristics reduce system-level risk. In high-reliability designs, these attributes justify cost differences by minimizing failure rates, simplifying thermal management, and supporting faster time-to-market through validated performance data.

Parts with Similar Specifications

The three parts on the right have similar specifications to IXYS IXFT70N20Q3

Product Attribute IXFT70N30Q3 IXFT74N20Q IXFT7N90Q IXFT58N20Q TRL
Part Number IXFT70N30Q3 IXFT74N20Q IXFT7N90Q IXFT58N20Q TRL
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id - - - -
Technology - - - -
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Power Dissipation (Max) - - - -
Series - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Rds On (Max) @ Id, Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Vgs (Max) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
FET Type - - - -
Drain to Source Voltage (Vdss) - - - -

IXFT70N20Q3 Datasheet PDF

Download IXFT70N20Q3 pdf datasheets and IXYS documentation for IXFT70N20Q3 - IXYS.

Datasheets
IXFx70N20Q3.pdf

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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IXFT70N20Q3 Image

IXFT70N20Q3

IXYS
98D-IXFT70N20Q3

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