Manufacturer Part Number
IXTK120N20P
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET with high current capability and low on-resistance
Product Features and Performance
Continuous drain current (Id) of 120A at 25°C case temperature
Drain-source voltage (Vdss) of 200V
Low on-resistance (Rds(on)) of 22mΩ at 500mA, 10V
High input capacitance (Ciss) of 6000pF at 25V
Power dissipation (Ptot) of 714W at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
Suitable for high-power, high-current applications
Excellent thermal performance
Reliable and durable construction
Key Technical Parameters
N-channel MOSFET
Vgs(th) of 5V at 250A
Qg of 152nC at 10V
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
Housed in a TO-264 (IXTK) package
Compatibility
Suitable for a wide range of high-power, high-current applications
Application Areas
High-power motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power handling
Excellent thermal performance for reliable operation in high-power applications
Robust and durable construction for long-term reliability
Wide operating temperature range for use in diverse environments
RoHS3 compliance for environmentally-friendly applications