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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleRXR035N03TCL
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RXR035N03TCL - Rohm Semiconductor

Manufacturer Part Number
RXR035N03TCL
Manufacturer
LAPIS Technology
Allelco Part Number
32D-RXR035N03TCL
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
125,790 pcs available, New & Original
Parts Description
MOSFET N-CH 30V 3.5A TSMT3
Package
TSMT3
Data sheet
RXR035N03TCL.pdf

PCN Design/Specification

TSMT Package Updates 24/Dec/2014.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 125790
  • Unit Price: $0.344
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.344 $0.34
200+ $0.138 $27.60
500+ $0.133 $66.50
1000+ $0.13 $130.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

RXR035N03TCL Tech Specifications
Rohm Semiconductor - RXR035N03TCL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor - RXR035N03TCL

Product Attribute Attribute Value
Manufacturer LAPIS Technology
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TSMT3
Series -
Rds On (Max) @ Id, Vgs 50mOhm @ 3.5A, 10V
Power Dissipation (Max) 1W (Ta)
Package / Case SC-96
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 3.3 nC @ 5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Base Product Number RXR035

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the RXR035N03TCL compare to the SI2304-TP in terms of Rds(on) and gate charge when switching 3.5A at 10V Vgs?
At a drain current of 3.5A and gate-source voltage of 10V, the RXR035N03TCL exhibits an on-resistance of 50mΩ, which is slightly higher than many modern low-side N-channel MOSFETs optimized for efficiency. The gate charge (Qg) of 3.3nC at 5V Vgs indicates relatively moderate switching losses. In comparison, the SI2304-TP typically achieves lower Rds(on), often below 30mΩ at similar conditions, with comparable or lower Qg values due to optimized cell structure and layout. While the RXR035N03TCL trades off some conduction efficiency for cost and footprint advantages, it remains viable in applications where thermal headroom exists and switching frequency is moderate.
What are the thermal implications of using the RXR035N03TCL in a compact power converter without a heatsink?
The RXR035N03TCL has a maximum power dissipation of 1W under ambient conditions, which limits its use in high-current applications without thermal management. Assuming a typical Rds(on) of 50mΩ at 10V Vgs, operating at 3.5A results in a steady-state power loss of approximately 0.875W. This level of dissipation, combined with poor thermal coupling in TSMT3 packaging, can raise junction temperature significantly above ambient unless airflow or copper area is adequate. In a typical PCB trace layout, this may exceed safe operating margins, necessitating derating or external cooling to maintain reliability over time.
Can the RXR035N03TCL be used as a synchronous rectifier in a buck converter at 500kHz?
The RXR035N03TCL has sufficient drain-to-source voltage rating (30V) and continuous drain current (3.5A) for many low-voltage buck converters, but its suitability as a synchronous rectifier depends heavily on switching speed. With a gate charge of 3.3nC and input capacitance of 180pF, full turn-on and turn-off times are likely in the tens of nanoseconds range. At 500kHz switching frequency, this introduces measurable conduction and switching losses that reduce efficiency. While feasible in light-load or discontinuous conduction mode applications, continuous operation would require careful gate drive strength and thermal design to avoid excessive self-heating and reduced system efficiency.
Why might someone choose the RXR035N03TCL over higher-performance alternatives like FDN359AN despite its higher Rds(on)?
The RXR035N03TCL offers a smaller footprint and lower cost compared to more robust alternatives such as the FDN359AN, which often features lower Rds(on) and higher current capability. In space-constrained designs or applications with moderate power demands—such as LED drivers or battery-powered peripherals—the trade-off in on-resistance may be acceptable if thermal analysis confirms safe operation within the 1W dissipation limit. Additionally, its MSL 1 classification and RoHS compliance support automated assembly processes, making it suitable for high-volume consumer electronics where reliability and manufacturability outweigh peak performance requirements.
Is the RXR035N03TCL suitable for motor control applications requiring fast switching and protection features?
While the RXR035N03TCL can function in simple motor driver circuits, its moderate gate charge and lack of integrated protection features make it less ideal for advanced motor control topologies. Applications demanding rapid commutation, back-EMF suppression, or current limiting benefit from devices with built-in diodes, ESD robustness, or higher gate drive compatibility. The 3.3nC Qg requires sufficient gate current to switch quickly, which may necessitate a dedicated gate driver IC rather than direct microcontroller drive. Without additional circuitry, shoot-through risks and EMI generation could increase in high-speed switching scenarios.
How does the threshold voltage of the RXR035N03TCL affect its use with 3.3V logic microcontrollers?
The RXR035N03TCL specifies a maximum threshold voltage (Vgs(th)) of 2.5V at 1mA Id, meaning it should activate fully with a 3.3V logic signal. However, because Vgs(th) is not guaranteed below 2.5V and shows significant variation between devices, the actual Rds(on) may remain elevated when driven by marginal 3.3V levels. For reliable operation, designers often apply 5V or higher gate drive to ensure deep saturation and minimal resistance. Therefore, while compatible in principle, optimal performance with 3.3V systems may require gate boosting or selection of devices with tighter Vgs(th) specifications.
What impact does package parasitics have on the high-frequency performance of the RXR035N03TCL?
The TSMT3 (SC-96) package introduces parasitic inductance and resistance due to bond wires and leadframe structure. These parasitics interact with the device’s internal capacitance—particularly the 180pF Ciss—to form resonant circuits that degrade high-frequency behavior. In switching applications above several hundred kHz, these effects can cause ringing, increased EMI, and reduced effective bandwidth. While acceptable for low-to-moderate speed digital switching, they limit utility in RF or precision analog switching roles. Layout practices such as short traces, ground planes, and minimized loop areas help mitigate but do not eliminate these limitations.
When substituting the RXR035N03TCL with PMV28ENEAR, what electrical differences should be verified?
The PMV28ENEAR generally exhibits lower Rds(on) and slightly different threshold characteristics compared to the RXR035N03TCL. Although both are N-channel TSMT3 packages with similar voltage ratings, the PMV28ENEAR may require verification of maximum continuous drain current, thermal performance under identical load conditions, and gate charge compatibility with existing gate drive circuits. Additionally, while both are RoHS compliant and suitable for surface mount assembly, slight variations in package dimensions or solder profile might influence reflow profiles. Substitution should include bench testing under real-world operating conditions to confirm no degradation in efficiency or thermal response.
Can the RXR035N03TCL operate safely in environments with intermittent overloads?
The RXR035N03TCL is rated for continuous operation up to 3.5A at 25°C ambient, but transient overloads must be evaluated against thermal mass and duty cycle. Its junction-to-ambient thermal resistance is not explicitly stated, but typical SC-96 packages exhibit limited heat spreading. Short-duration surges beyond 3.5A may be survivable depending on pulse width and thermal impedance, but repeated events without sufficient recovery time risk cumulative heating and failure. Designers should implement current sensing and soft-start mechanisms if overload protection is required, rather than relying solely on the device’s intrinsic ratings.
Does the RXR035N03TCL support body diode conduction in inductive load switching?
Yes, the RXR035N03TCL includes an intrinsic body diode formed by the parasitic PN junction between source and drain. This diode allows reverse current flow during turn-off of inductive loads, enabling freewheeling paths in half-bridge or flyback configurations. However, its forward voltage drop is typically 0.6–0.8V, and recovery characteristics are slow compared to external Schottky diodes. In high-efficiency or high-frequency designs, supplementing with an external diode improves energy recovery and reduces losses. The body diode’s presence simplifies circuit topology but must be accounted for in transient analysis and snubber design.
How does moisture sensitivity affect storage and handling of RXR035N03TCL components?
The RXR035N03TCL has an MSL (Moisture Sensitivity Level) of 1, indicating unlimited shelf life under normal dry storage conditions. This means it can be stored indefinitely in sealed packaging with desiccant, without requiring bake-out prior to reflow soldering. However, once opened, exposure to humid environments increases risk of popcorning during thermal cycling. Manufacturers recommend handling per JEDEC J-STD-033 standards, including baking only if humidity indicator cards show elevation above 30% RH after opening. Proper handling ensures reliability in automated production lines.
Are there any known reliability concerns specific to the RXR035N03TCL in automotive-grade applications?
The RXR035N03TCL is not qualified to automotive temperature grades (e.g., AEC-Q101), and its standard industrial grade implies limited stress testing beyond commercial benchmarks. In automotive environments subject to wide temperature swings, vibration, and long-term aging, potential failures could arise from electromigration, gate oxide degradation, or bond wire fatigue. While functional in non-critical automotive subsystems, its use in primary power delivery or safety-related circuits is discouraged without additional qualification. Designers considering such deployment should perform accelerated life testing tailored to target operating profiles.
What role does gate drive voltage play in minimizing conduction losses for the RXR035N03TCL?
Conduction losses scale inversely with gate-source voltage above threshold. The RXR035N03TCL achieves Rds(on) = 50mΩ at 10V Vgs, but this value rises nonlinearly toward 4V. Driving the gate with 10V instead of 4V reduces Rds(on) proportionally to current squared, lowering I²R losses significantly. For example, at 3.5A, the power loss drops from ~0.61W at 4V to ~0.25W at 10V—a 59% reduction. However, exceeding 10V provides diminishing returns and risks damaging the gate oxide. Optimal gate drive strikes a balance between efficiency, noise margin, and reliability.
How does the RXR035N03TCL behave under negative gate transients, and what protective measures are needed?
The RXR035N03TCL supports gate-source voltages down to -20V, allowing negative bias for faster turn-off or improved noise immunity. However, excessive negative swing can induce parasitic turn-on through Miller effect in certain switching sequences. In half-bridge configurations, floating gate drives must include clamping diodes to prevent overshoot beyond ±20V. Without isolation or level-shifting circuitry, stray capacitances may couple noise into the gate, causing unintended conduction. Proper layout, shielding, and gate resistor selection are essential to leverage negative drive benefits safely.
What considerations apply when paralleling multiple RXR035N03TCL devices for higher current sharing?
Paralleling discrete MOSFETs like the RXR035N03TCL introduces challenges due to mismatched Rds(on), Vgs(th), and thermal coupling. Even small variations cause uneven current distribution, leading to localized heating and potential thermal runaway. Passive balancing resistors offer minimal improvement in dynamic conditions. Instead, designers should prefer single devices with higher current ratings or integrate parallel cells within a monolithic solution. If paralleling is unavoidable, forced airflow, matched pre-selection, and current feedback loops are necessary to maintain stability and prevent premature failure.
How does input capacitance affect the gate driver requirements for the RXR035N03TCL?
The RXR035N03TCL presents 180pF of input capacitance (Ciss) referenced to 10V Vds. Charging and discharging this capacitance during each switching cycle determines gate drive current demand. At 100kHz with 5V overdrive, the average gate current is roughly Qg × f = 3.3nC × 100kHz ≈ 0.33mA. Higher frequencies or faster edges increase peak current needs, potentially straining microcontroller GPIO pins or requiring external buffer stages. Adequate gate drive ensures fast transitions, reducing crossover distortion and EMI, especially important in PWM-driven applications.
What are the key differences between the RXR035N03TCL and the PMV50ENEAR in terms of performance and application suitability?
The PMV50ENEAR typically offers lower Rds(on) and higher power dissipation capability than the RXR035N03TCL, making it more suitable for sustained high-current loads. While both share similar package types and voltage ratings, the PMV50ENEAR often incorporates enhanced thermal pads or thicker die attachment for better heat transfer. This translates to lower junction temperatures under identical conditions, improving long-term reliability. However, the RXR035N03TCL remains competitive in cost-sensitive, low-duty-cycle applications where absolute peak efficiency is secondary to board space and procurement simplicity. Selection hinges on system-level trade-offs between performance, thermal budget, and bill-of-materials cost.
How does the absence of specified SOA (Safe Operating Area) data affect design confidence when using the RXR035N03TCL?
Unlike power transistors intended for linear operation, the RXR035N03TCL appears optimized for switching rather than active region use, so SOA curves are less critical. Nonetheless, lack of published SOA limits assessment of pulsed avalanche capability or secondary breakdown risks during inductive turn-off. Designers must rely on worst-case simulations, empirical testing, and conservative derating when driving inductive loads. Ensuring low dV/dt across the drain-source terminals and using snubbers or clamp circuits mitigates risks associated with uncharacterized dynamic behavior, preserving system integrity in fault or startup transients.

Parts with Similar Specifications

The three parts on the right have similar specifications to Rohm Semiconductor RXR035N03TCL

Product Attribute BSC120N03LSG SPB80N03S2L-04 G FQI50N06TU IPB80N06S208ATMA2
Part Number BSC120N03LSG SPB80N03S2L-04 G FQI50N06TU IPB80N06S208ATMA2
Manufacturer Infineon Technologies Infineon Technologies onsemi Infineon Technologies
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
FET Type - - - -
Vgs(th) (Max) @ Id - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Current - Continuous Drain (Id) @ 25°C - - - -
Series - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Gate Charge (Qg) (Max) @ Vgs - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Drain to Source Voltage (Vdss) - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Technology - - - -
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Power Dissipation (Max) - - - -
Vgs (Max) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Rds On (Max) @ Id, Vgs - - - -

RXR035N03TCL Datasheet PDF

Download RXR035N03TCL pdf datasheets and Rohm Semiconductor documentation for RXR035N03TCL - Rohm Semiconductor.

PCN Design/Specification
TSMT Package Updates 24/Dec/2014.pdf

Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Rohm Semiconductor

RXR035N03TCL

Rohm Semiconductor
32D-RXR035N03TCL

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