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HomeProductsIntegrated Circuits (ICs)Linear - Amplifiers - Instrumentation, OP Amps, Buffer AmpsTLV2316IDGKT
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TLV2316IDGKT - Texas Instruments

Manufacturer Part Number
TLV2316IDGKT
Manufacturer
Texas Instruments
Allelco Part Number
32D-TLV2316IDGKT
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
47,073 pcs available, New & Original
Parts Description
IC CMOS 2 CIRCUIT 8VSSOP
Package
8-VSSOP
Data sheet
TLV2316IDGKT.pdf
RoHs Status
ROHS3 Compliant
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Specifications

TLV2316IDGKT Tech Specifications
Texas Instruments - TLV2316IDGKT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - TLV2316IDGKT

Product Attribute Attribute Value
Manufacturer Texas Instruments
Voltage - Supply Span (Min) 1.8 V
Voltage - Supply Span (Max) 5.5 V
Voltage - Input Offset 750 µV
Supplier Device Package 8-VSSOP
Slew Rate 6V/µs
Series -
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Package Tape & Reel (TR)
Output Type Rail-to-Rail
Product Attribute Attribute Value
Operating Temperature -40°C ~ 125°C
Number of Circuits 2
Mounting Type Surface Mount
Gain Bandwidth Product 10 MHz
Current - Supply 400µA (x2 Channels)
Current - Output / Channel 50 mA
Current - Input Bias 10 pA
Base Product Number TLV2316
Amplifier Type CMOS

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key performance characteristics of the TLV2316IDGKT that make it suitable for precision analog signal conditioning in battery-powered medical devices?
The TLV2316IDGKT offers a low input bias current of 10 pA and an input offset voltage of 750 µV, which minimize errors in high-impedance sensor interfaces commonly found in medical instrumentation. Its rail-to-rail output swing allows full utilization of the supply range from 1.8 V to 5.5 V, critical when operating on limited battery power. With a supply current of only 400 µA per channel, the device helps extend battery life in portable applications. These attributes, combined with a bandwidth of 10 MHz and a slew rate of 6 V/µs, enable accurate amplification of weak physiological signals such as ECG or blood pressure waveforms without introducing significant distortion or drift.
How does the TLV2316IDGKT compare to the TLV2376IDGKT in terms of input noise and dynamic range for audio preamplifier designs?
While both amplifiers share similar architectures, the TLV2316IDGKT generally exhibits lower input-referred noise density due to its CMOS design and 10 pA input bias current, making it more suitable for high-impedance microphone front ends requiring clean gain stages. In contrast, the TLV2376IDGKT typically features higher open-loop gain and better DC precision but may exhibit slightly elevated noise at higher frequencies. For low-voltage, single-supply audio applications under 3.3 V, the TLV2316IDGKT provides superior power efficiency and rail-to-rail operation, whereas the TLV2376IDGKT might be preferred when absolute gain accuracy outweighs power consumption constraints.
Can the TLV2316IDGKT reliably drive capacitive loads exceeding 100 nF without oscillation in industrial control systems?
Yes, the TLV2316IDGKT is designed to maintain stability with capacitive loads up to several hundred nanofarads, provided adequate phase margin is preserved through proper layout practices. The internal compensation network supports typical capacitive loading seen in relay coils, solenoid drivers, or long PCB traces. However, when driving loads beyond 200 nF, adding a small series resistor (e.g., 10–50 Ω) at the amplifier output is recommended to dampen potential peaking and ensure reliable operation across the full temperature range (-40°C to 125°C). This precaution is especially important in high-gain configurations common in feedback networks for motor control or power regulation circuits.
What layout considerations are essential to prevent latch-up or instability when using the TLV2316IDGKT in a dual-channel ADC driver application?
Maintaining separate ground returns for analog and digital sections is crucial to avoid coupling noise into the sensitive input stages of the TLV2316IDGKT. Place bypass capacitors (0.1 µF ceramic) as close as possible to each power pin to suppress high-frequency switching transients. Keep feedback resistors within 10 mm of the op-amp inputs to reduce parasitic capacitance and lead inductance. Additionally, avoid routing clock lines or digital signals near the amplifier’s input traces to prevent substrate injection effects. Given the device’s wide supply range (1.8 V to 5.5 V), ensure that all reference voltages remain stable and decoupled during transient events.
Is the TLV2316IDGKT suitable for use in automotive infotainment systems operating over the full -40°C to 125°C temperature range?
Yes, the TLV2316IDGKT is qualified for industrial and automotive environments, with guaranteed specifications across -40°C to 125°C. Its CMOS architecture ensures consistent performance even at elevated temperatures where bipolar amplifiers often degrade. The rail-to-rail input/output capability simplifies interfacing with ADCs powered by 3.3 V or lower logic levels, common in modern car radios and touchscreen controllers. However, thermal derating should still be considered for continuous output currents approaching 50 mA per channel to avoid localized heating that could affect long-term reliability in enclosed system housings.
What trade-offs exist between speed, power, and linearity when selecting the TLV2316IDGKT versus a general-purpose op-amp like the LM358 for data acquisition systems?
The TLV2316IDGKT trades higher power consumption (400 µA per channel vs. ~500 µA total for LM358) for significantly improved speed (10 MHz GBW, 6 V/µs slew rate) and input characteristics (10 pA bias current, 750 µV offset). Unlike the LM358, which lacks rail-to-rail output and has limited CMRR at high frequencies, the TLV2316IDGKT maintains accuracy across the entire supply span and supports faster settling times in multiplexed ADC front ends. For slow-changing sensor signals, the LM358 suffices; however, for multiplexed, multi-channel sampling or buffered references, the TLV2316IDGKT reduces settling error and improves effective resolution—especially critical in 16-bit or higher systems.
How does the Moisture Sensitivity Level (MSL) rating of MSL 2 affect handling and storage requirements for the TLV2316IDGKT during mass production assembly?
With an MSL rating of 2, the TLV2316IDGKT must be used within one year after opening the moisture barrier bag if stored under dry conditions (typically <10% RH). After exposure to ambient humidity, it requires bake-out prior to reflow soldering to prevent popcorning. This mandates strict inventory turnover and documentation tracking in high-volume manufacturing environments. Suppliers usually provide handling instructions aligned with JEDEC J-STD-033 standards, including real-time humidity monitoring and sealed packaging with desiccant indicators for compliance during SMT processing.
Can the TLV2316IDGKT be used in a split-supply configuration despite being rated for single-supply operation down to 1.8 V?
Yes, the TLV2316IDGKT can operate in split-supply mode (e.g., ±2.5 V), though this consumes more power than single-supply use. The datasheet specifies functionality from 1.8 V to 5.5 V per supply rail, allowing symmetric supplies as long as the total voltage difference remains within limits. In split-supply configurations, ensure that input common-mode range includes zero volts, which the rail-to-rail input stage accommodates. However, output swing may slightly reduce near ground or V+ depending on load and output current demand, so verify swing margins under worst-case load conditions.
What is the impact of the 750 µV input offset voltage on gain accuracy in a precision instrumentation amplifier using two TLV2316IDGKT stages?
In a differential amplifier configuration, the 750 µV offset introduces a fixed error at the output scaled by the closed-loop gain. For example, at a gain of 100, this results in a 75 mV error, which may exceed acceptable thresholds in 12-bit systems (LSB ≈ 1.2 mV at 5 V full scale). Calibration or trimming techniques are necessary for gains above 20 to achieve sub-millivolt accuracy. Alternatively, cascading multiple stages increases cumulative offset, making the TLV2316IDGKT less ideal for ultra-high-precision (<1 mV) applications unless compensated via software correction or laser-trimmed components.
Why might the TLV2316IDGKT be preferred over other dual-channel amplifiers in space-constrained IoT edge nodes with strict power budgets?
The TLV2316IDGKT integrates two independent channels in a compact 8-VSSOP package (3.0 × 3.0 mm), reducing board area compared to discrete solutions. At just 400 µA per channel, total quiescent current remains below 1 mA—critical for battery-operated sensors. Its wide supply range enables direct interface with low-voltage microcontrollers without level-shifting circuitry. Combined with high input impedance and low leakage, it efficiently condition signals from thermistors, photodiodes, or piezoelectric sensors in remote monitoring nodes where every milliwatt counts.
How does the 10 MHz gain bandwidth product influence maximum usable gain in a transimpedance amplifier configuration using the TLV2316IDGKT?
In a transimpedance setup, the bandwidth decreases inversely with gain. For instance, a 1 kΩ feedback resistor yields approximately 10 MHz bandwidth regardless of gain, but increasing resistance lowers bandwidth. With a 10 MHz GBW, the TLV2316IDGKT can support transimpedance gains up to ~1 MΩ before roll-off begins affecting photodiode signal fidelity. Above this, additional compensation techniques such as parallel feedback capacitors may be required to stabilize the loop, though this introduces trade-offs in rise time and noise performance.
Are there any limitations regarding output short-circuit current when driving inductive loads with the TLV2316IDGKT in motor control peripherals?
The TLV2316IDGKT can source or sink up to 50 mA per channel continuously, sufficient for most relay or solenoid drivers. However, sustained short-circuit conditions may cause thermal stress; thus, external current-limiting diodes or foldback circuitry are advisable for fault protection. When driving back-EMF generating loads, incorporate flyback diodes across the load to protect against voltage spikes that could exceed the absolute maximum ratings, particularly in high-inductance applications such as valve actuators or buzzers.
What precautions should be taken when replacing legacy op-amps with the TLV2316IDGKT in existing PCB layouts originally designed for higher-offset devices?
Verify compatibility with input common-mode range, especially if the original design assumed unipolar rails. Although the TLV2316IDGKT accepts inputs below ground in single-supply mode, ensure no negative voltages appear at the input pins. Also, confirm that feedback networks do not rely on saturation behavior unique to older parts—CMOS amplifiers have much lower open-loop gain at DC but higher bandwidth. Layout parasitics may require minor adjustments to compensation components to maintain stability in legacy feedback topologies.
How does the RoHS3 compliance status of the TLV2316IDGKT affect material selection and end-of-life recycling in consumer electronics?
RoHS3 compliance means the TLV2316IDGKT meets updated European directives restricting hazardous substances, including phthalates and mercury, ensuring safer disposal and recycling. Manufacturers benefit from reduced regulatory risk and alignment with global environmental standards, particularly in regions requiring full compliance for market access. The absence of halogenated flame retardants and restricted cadmium further simplifies supply chain auditing and enhances sustainability credentials in eco-conscious product designs.
Can the TLV2316IDGKT be used in parallel to increase output drive capability without causing instability or crosstalk between channels?
Operating the TLV2316IDGKT in parallel is generally not recommended due to potential phase mismatch and unequal current sharing, which can lead to oscillations or thermal imbalance. Instead, consider dedicated output buffers or external push-pull transistors for increased drive. If paralleling is unavoidable, add small series resistors (~10 Ω) at each output to isolate channels and improve matching, though this sacrifices some efficiency and increases footprint. Always validate transient response and thermal distribution under maximum load conditions.
What role does the 6 V/µs slew rate play in preserving signal integrity for fast-transient applications such as envelope detection in RF front ends?
The 6 V/µs slew rate determines how quickly the output can respond to rapid input changes without distorting the waveform shape. In envelope detectors processing modulated signals with steep edges, insufficient slew rate causes overshoot and ringing, degrading demodulation accuracy. The TLV2316IDGKT’s slew rate comfortably handles moderate-speed modulations (e.g., AM up to 1 MHz) while maintaining linear reproduction of peak amplitudes, unlike slower amplifiers that clip or introduce harmonic content during fast transitions.
How does the base product number TLV2316 relate to derivative variants such as the TLV2316IDGKR, and what differences should engineers expect in selection decisions?
The TLV2316IDGKT shares core electrical specifications with other members of the TLV2316 family, differing primarily in packaging (tape & reel vs. wider reel formats) and sometimes availability. The IDGKT denotes 8-VSSOP in tape & reel, while IDGKR typically refers to the same package in standard reels. All variants meet identical performance criteria, so selection hinges on logistics and assembly process rather than functionality. Engineers should prioritize packaging based on pick-and-place equipment capabilities and inventory management strategies.

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments TLV2316IDGKT

Product Attribute TLV2314IDGKT TLV2316IDGKR TLV2316QDGKTQ1 TLV2314IDGKR
Part Number TLV2314IDGKT TLV2316IDGKR TLV2316QDGKTQ1 TLV2314IDGKR
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Mounting Type - Surface Mount Through Hole Surface Mount
Base Product Number - DAC34H84 MAX500 ADS62P42
Current - Supply - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Output Type - Current - Unbuffered Voltage - Buffered -
Amplifier Type - - - -
Gain Bandwidth Product - - - -
Number of Circuits - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Series - - - -
Current - Input Bias - - - -
Voltage - Input Offset - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Slew Rate - - - -
Voltage - Supply Span (Min) - - - -
Current - Output / Channel - - - -
Voltage - Supply Span (Max) - - - -

TLV2316IDGKT Datasheet PDF

Download TLV2316IDGKT pdf datasheets and Texas Instruments documentation for TLV2316IDGKT - Texas Instruments.

PCN Assembly/Origin
Additional Assembly Sites 16/Dec/2021.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

  • Daic***K.
    Mar 23, 2026

    Very good. No issue after long time testing.

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TLV2316IDGKT Image

TLV2316IDGKT

Texas Instruments
32D-TLV2316IDGKT

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