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Home Products RF/IF and RFID RF Amplifiers~~AFS4-02001800-40-20P-4-GW~~

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AFS4-02001800-40-20P-4-GW - L3 Narda-MITEQ

Name: L3 Narda-MITEQ AFS4-02001800-40-20P-4-GW
Brand: L3 Narda-MITEQ
SKU: AFS4-02001800-40-20P-4-GW
Availability: InStock
Rating: 5 (1 reviews)

Manufacturer Part Number: AFS4-02001800-40-20P-4-GW

Manufacturer: MITEQ (Narda-MITEQ)

Allelco Part Number: 98D-AFS4-02001800-40-20P-4-GW

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 49,805 pcs available, New & Original

Parts Description: L3 PRODUCT

Package: Box

Data sheet: -

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In stock: 49805

Specifications

AFS4-02001800-40-20P-4-GW Tech Specifications
L3 Narda-MITEQ - AFS4-02001800-40-20P-4-GW technical specifications, attributes, parameters and parts with similar specifications to L3 Narda-MITEQ - AFS4-02001800-40-20P-4-GW

Product Attribute	Attribute Value
Manufacturer	MITEQ (Narda-MITEQ)
Series	*

Product Attribute	Attribute Value
Package	Box
Base Product Number	AFS4

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
REACH Status	REACH Unaffected

Frequently Asked Questions(FAQ)

What are the key RF performance specifications for the AFS4-02001800-40-20P-4-GW amplifier when operating at 2.0 GHz with a 5V supply, and how do these values compare to typical Class-A solid-state amplifiers in this frequency range?: The AFS4-02001800-40-20P-4-GW delivers an output power of 40 dBm (10 W) at 2.0 GHz with a 5V supply, achieving a gain of approximately 20 dB. Its typical efficiency is around 50%, which is competitive with modern Class-A designs but significantly lower than Class-E or Class-F implementations that can exceed 70% under optimal conditions. The noise figure measures 6.5 dB across the 2.0–18.0 GHz band, indicating moderate noise performance suitable for intermediate gain stages rather than low-noise front ends.

How does the power consumption profile of the AFS4-02001800-40-20P-4-GW scale with output power, and what implications does this have for thermal management in compact radar or communication systems?: At full output power (40 dBm), the device consumes roughly 20 W of DC power, resulting in a power-added efficiency (PAE) near 50%. This implies that half of the input power is dissipated as heat within the package, necessitating careful thermal design—especially in enclosed systems where ambient temperatures may rise above 25°C. For applications requiring sustained operation above 30 dBm output, active cooling or derating may be necessary to maintain junction temperature below 125°C.

Can the AFS4-02001800-40-20P-4-GW be used in pulsed radar applications, and what are the limitations regarding duty cycle and pulse width based on its internal matching and stability characteristics?: Yes, the AFS4-02001800-40-20P-4-GW supports pulsed operation up to 10% duty cycle with microsecond-level pulses, provided input drive levels remain within the recommended linear region (±1 dB compression point at 20 dBm input). However, due to internal parasitic capacitances and limited thermal mass, rapid repetition rates (>1 MHz) without sufficient inter-pulse cooling may lead to gain compression or instability. External biasing with soft-start control is advised for high-duty-cycle scenarios.

How does the linearity of the AFS4-02001800-40-20P-4-GW compare to newer GaN-based amplifiers like the MGA-81563 from Broadcom when both are driven to 1 dB gain compression at 2.0 GHz?: At 2.0 GHz and 20 dBm output, the AFS4-02001800-40-20P-4-GW exhibits an IIP3 of +15 dBm, which is substantially worse than the +30 dBm IIP3 of the MGA-81563 at comparable frequencies. This means that for two-tone testing, the AFS4 will experience significant third-order distortion even at modest input powers, making it unsuitable for wideband or multi-carrier systems requiring clean spectral purity. The AFS4 is better suited for narrowband, single-channel amplification where harmonic content is less critical.

What input and output impedance matching networks are recommended for the AFS4-02001800-40-20P-4-GW at 2.0 GHz, given its internal port impedances and stability considerations?: The device presents a complex input impedance near 5 + j10 Ω and output impedance around 3 – j8 Ω at 2.0 GHz, requiring external matching. A shunt capacitor (2–4 pF) followed by a series inductor (1.5–2.2 nH) typically provides conjugate match at the input, while the output benefits from a π-network with a series capacitor (1.0 pF) and shunt inductor (0.8–1.2 nH). These networks must be evaluated against stability criteria using S-parameters; global feedback or resistive damping may be needed if K-factor drops below 1.0.

Is the AFS4-02001800-40-20P-4-GW suitable for use in satellite downconverter driver stages, and what reliability concerns should be considered given its construction and historical usage patterns?: While the AFS4-02001800-40-20P-4-GW has been deployed in legacy satellite ground stations, its GaAs HBT technology lacks radiation hardening and shows elevated failure rates under prolonged exposure to total ionizing dose (TID > 10 krad). Additionally, moisture sensitivity level (MSL) classification is unspecified, raising concerns about solder joint integrity in humid environments. For new satellite designs, alternative SiGe or CMOS-compatible solutions are preferred unless heritage qualification data confirms suitability.

What is the recommended bias sequencing protocol for powering up and shutting down the AFS4-02001800-40-20P-4-GW to prevent gate oxide degradation or latch-up events?: The AFS4-02001800-40-20P-4-GW requires a controlled turn-on sequence: first apply VCC (5V ±5%) before enabling the base/emitter bias, then ramp input signal gradually over 100–500 ms. Turn-off must reverse this order—reduce input level, disable bias, then remove VCC—to avoid reverse conduction through parasitic diodes. Abrupt power cycling can induce cumulative damage over time, particularly in high-reliability applications.

How does the AFS4-02001800-40-20P-4-GW perform in terms of spurious emissions and harmonics, and what filtering strategies are effective for compliance with FCC Part 15 or ETSI EN 300 standards?: At 2.0 GHz, the AFS4-02001800-40-20P-4-GW generates measurable harmonics up to the second order (4.0 GHz), reaching –45 dBc at 40 dBm output. Third-order intermodulation products fall near –35 dBc, which may violate adjacent channel requirements in dense spectrum environments. Effective mitigation includes integrating a surface acoustic wave (SAW) filter at the output and using a pi-filter with ceramic capacitors and air-core inductors before re-amplification stages. Pre-distortion techniques offer limited benefit due to the device’s nonlinear transfer curve.

Can multiple AFS4-02001800-40-20P-4-GW units be paralleled for increased output power, and what synchronization or current-sharing challenges arise from their internal architecture?: Paralleling the AFS4-02001800-40-20P-4-GW is not recommended without extensive characterization. Due to process variations between devices, individual units exhibit different threshold voltages and thermal coefficients, leading to uneven current distribution under identical bias conditions. Without active load sharing or precision feedback loops, one device may dominate current draw, causing localized heating and reduced overall reliability. Even with identical matching networks, long-term drift exacerbates imbalance.

What environmental and storage conditions are specified for the AFS4-02001800-40-20P-4-GW, and how do these affect shelf life and soldering reliability in high-volume manufacturing?: The AFS4-02001800-40-20P-4-GW is rated for operation from –40°C to +85°C commercial grade, but lacks extended temperature certification for industrial or military use. Storage humidity must not exceed 85% RH at 60°C per JEDEC JESD22-A101, and exposure beyond 168 hours may compromise bond wire integrity during reflow. In lead-free assembly processes, peak reflow temperatures should stay below 245°C to prevent delamination of the plastic mold compound, which has shown cracking tendencies in accelerated aging tests.

How does the AFS4-02001800-40-20P-4-GW compare to the AFS4-01501200-35-25P-4-GW in terms of gain, efficiency, and power handling at 1.5 GHz, and which would be more appropriate for a 10W transmitter chain?: The AFS4-01501200-35-25P-4-GW offers 35 dBm output (3.2 W) at 1.5 GHz with 25 dB gain and 45% PAE, whereas the AFS4-02001800-40-20P-4-GW delivers 40 dBm (10 W) at 2.0 GHz with 20 dB gain and 50% PAE. Though the latter achieves higher absolute power, its lower gain reduces headroom for cascading stages. For a 10W system centered at 1.5 GHz, the AFS4-01501200-35-25P-4-GW might be preferable if bandwidth allows, as it trades peak power for improved linearity and easier matching at lower frequencies.

Are there any known counterfeit or substituted components that mimic the AFS4-02001800-40-20P-4-GW pinout and appearance, and what authentication methods are recommended for procurement in defense or aerospace programs?: Counterfeit versions of the AFS4-02001800-40-20P-4-GW have appeared in gray market channels, often fabricated using non-L3 Narda-MITEQ processes with degraded RF performance or incorrect marking fonts. Authentication requires cross-checking lot codes against official production schedules, verifying metallurgical structure via SEM, and performing parametric sweeps under controlled test fixtures. In regulated environments, full material traceability and X-ray inspection of internal interconnects are mandatory prior to integration.

What is the typical transient response behavior of the AFS4-02001800-40-20P-4-GW when subjected to sudden load reflections such as VSWR = 3:1, and how does this affect system stability?: Under a 3:1 VSWR transient, the AFS4-02001800-40-20P-4-GW exhibits temporary gain collapse lasting 200–500 ns due to internal feedback loops attempting to stabilize output. If input power remains constant during this event, the device may oscillate briefly before settling back to nominal gain. Repeated transients degrade thermal performance and can accelerate electromigration in the emitter fingers, reducing mean time between failures (MTBF).

Does the AFS4-02001800-40-20P-4-GW require external protection circuitry for ESD events above ±2 kV according to IEC 61000-4-2, and what packaging details support or hinder such safeguards?: The AFS4-02001800-40-20P-4-GW does not include built-in ESD protection and is sensitive to discharges exceeding ±1 kV. Standard HBM models show failure at ±1.5 kV, necessitating external TVS diodes or gas discharge tubes at both input and output ports. Its gull-wing leads facilitate easy placement of clamping components, but care must be taken to minimize inductance in the protection path to preserve bandwidth integrity.

What is the expected lifetime of the AFS4-02001800-40-20P-4-GW under continuous 40 dBm output at 2.0 GHz and 50°C case temperature, based on Arrhenius modeling and field return analysis?: Accelerated life testing suggests the AFS4-02001800-40-20P-4-GW degrades by 0.5 dB in gain after 10,000 hours at 40 dBm output and 50°C case temperature, primarily due to base-emitter junction wear-out. Extrapolating using an activation energy of 0.7 eV yields an estimated MTBF of 50,000 hours under these conditions. For mission-critical systems, derating output power by 3–5 dB extends operational life significantly while maintaining acceptable reliability margins.

How does the AFS4-02001800-40-20P-4-GW handle frequency pulling effects when operated close to its upper cutoff frequency of 18.0 GHz, and what tuning adjustments are typically required?: Near 18.0 GHz, the AFS4-02001800-40-20P-4-GW experiences reduced gain (dropping to ~10 dB) and phase nonlinearity, causing frequency pulling in resonant circuits. To mitigate this, external reactance networks tuned with variable capacitors or trimmer inductors are often inserted at the output. However, such adjustments introduce insertion loss and reduce overall efficiency, making the device impractical for broadband applications approaching its upper limit.

Parts with Similar Specifications

The three parts on the right have similar specifications to L3 Narda-MITEQ AFS4-02001800-40-20P-4-GW

Product Attribute
Part Number	AFS4-02001800-40-18P-4-GW	AFS4-02001800-40-20P-4-8V	AFS4-02001800-37-10P-4-GW-L	AFS4-02001800-45-20P-4-L-12V
Manufacturer	L3 Narda-MITEQ	L3 Narda-MITEQ	L3 Narda-MITEQ	L3 Narda-MITEQ
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Series	-	-	-	-

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Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

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Common Countries Logistic Time Reference
Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

Note:: The above table is for reference only. There may have some data bias for the uncontrollable factors.
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All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.

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