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HomeProductsDiscrete Semiconductor ProductsDiodes - Zener - Single1N4736UR-1
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1N4736UR-1 - Microchip Technology

Manufacturer Part Number
1N4736UR-1
Manufacturer
Microchip Technology
Allelco Part Number
98D-1N4736UR-1
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
33,209 pcs available, New & Original
Parts Description
VOLTAGE REGULATOR
Package
DO-213AB (MELF, LL41)
Data sheet
1N4736UR-1.pdf
RoHs Status
 
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Our certification
In stock: 33209
  • Unit Price: $3.645
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $3.645 $3.65
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

1N4736UR-1 Tech Specifications
Microchip Technology - 1N4736UR-1 technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology - 1N4736UR-1

Product Attribute Attribute Value
Manufacturer Microchip Technology
Voltage - Zener (Nom) (Vz) 6.8 V
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA
Tolerance ±10%
Supplier Device Package DO-213AB (MELF, LL41)
Series -
Power - Max 1 W
Product Attribute Attribute Value
Package / Case DO-213AB, MELF (Glass)
Package Bulk
Operating Temperature -65°C ~ 175°C
Mounting Type Surface Mount
Impedance (Max) (Zzt) 3.5 Ohms
Current - Reverse Leakage @ Vr 10 µA @ 4 V

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the 1N4736UR-1 Zener diode perform in high-temperature environments, and what design considerations are necessary for automotive or industrial applications requiring operation up to 175°C?
The 1N4736UR-1 is rated for an operating temperature range of -65°C to 175°C, making it suitable for extreme thermal conditions common in automotive and industrial systems. At elevated temperatures, Zener voltage drift can occur due to semiconductor material properties; however, the ±10% tolerance provides sufficient margin for most regulation tasks. Engineers should ensure adequate heat dissipation despite the 1W power rating being specified at ambient conditions, as derating applies above 25°C. Thermal impedance must be evaluated when mounting on PCBs with limited copper area or in sealed enclosures.
What are the key differences between the 1N4736UR-1 and similar 6.8V Zener diodes such as the 1N4733A when used in precision voltage reference circuits?
While both devices offer 6.8V Zener breakdown, the 1N4736UR-1 features a maximum dynamic impedance (Zzt) of 3.5 ohms compared to typically 5–8 ohms for the 1N4733A. This lower impedance contributes to better regulation under load variations, especially important in precision reference applications where current stability directly impacts output accuracy. Additionally, the 1N4736UR-1’s surface-mount MELF package reduces parasitic inductance and improves high-frequency response versus through-hole equivalents—critical for noise-sensitive analog front ends.
Can the 1N4736UR-1 be safely operated near its 1W power limit in continuous duty, and how should PCB layout influence thermal management decisions?
Continuous operation at full 1W power requires careful thermal design. The device dissipates heat primarily through its metal electrode base, so direct soldering to a large copper pad enhances conduction. In practice, most designs operate the 1N4736UR-1 well below 500mW to maintain junction temperatures below 125°C even in confined spaces. For example, in a 100mA regulated supply using a series resistor, power dissipation would be approximately 0.68W (6.8V × 100mA), necessitating either airflow or significant copper pour area exceeding 50mm² per watt dissipated.
What reverse leakage current behavior should designers expect from the 1N4736UR-1 at typical clamping voltages, and how might this impact low-power battery monitoring circuits?
At 4V reverse bias—well below its 6.8V Zener threshold—the 1N4736UR-1 exhibits less than 10µA of leakage current. However, once reverse voltage exceeds Vz, leakage rises sharply due to avalanche multiplication. In battery monitoring applications where nanoampere-level sensing is required, even small Zener currents can distort measurements unless buffered appropriately. A series resistor limits current but introduces voltage drop; thus, trade-offs between regulation speed, power loss, and measurement fidelity must be balanced based on system requirements.
How does the ±10% tolerance of the 1N4736UR-1 affect system-level calibration, and what compensation techniques are commonly employed in microcontroller-based power supplies?
The ±10% tolerance implies that actual Vz may vary between 6.12V and 7.48V across units. In systems requiring tighter regulation, such as ADC reference inputs, this variability demands calibration. One approach uses an external op-amp feedback loop with adjustable gain to trim output. Alternatively, digital potentiometers in closed-loop topologies allow post-manufacture correction via firmware. Without compensation, end-of-line testing becomes essential, increasing production cost—especially problematic in high-volume consumer electronics.
Is the 1N4736UR-1 suitable for use in surge protection circuits, and how does its fast switching characteristic compare to TVS diodes designed for transient suppression?
The 1N4736UR-1 is not optimized for surge protection. Its primary function is voltage regulation, not energy absorption. While capable of handling brief overloads due to the 1W rating, it lacks the ruggedized structure and large die size of dedicated transient voltage suppressors like SMAJ or SMBJ series diodes. Transient events exceeding hundreds of watts can permanently damage the MELF package. Therefore, the 1N4736UR-1 should only serve as a secondary clamp behind primary TVS protection in scenarios where precise voltage limitation is needed without diverting large transient currents.
What forward voltage characteristics should be considered if the 1N4736UR-1 is used in bidirectional clamping configurations?
Although primarily intended for reverse-bias operation, the 1N4736UR-1 has a specified forward voltage drop of 1.2V at 200mA. In bidirectional clamping setups using back-to-back Zeners, this forward drop creates asymmetric conduction thresholds—typically around +0.6V below ground and -6.8V above it. This asymmetry can lead to unequal response times during positive-going transients, potentially leaving sensitive loads unprotected momentarily. Designers should verify that worst-case forward current remains within safe limits and consider adding Schottky diodes for faster positive-edge response if symmetry is critical.
How does the DO-213AB (MELF) packaging of the 1N4736UR-1 influence automated assembly processes, and what solder joint reliability concerns arise in lead-free reflow profiles?
The miniature endcap design of the DO-213AB package enables compatibility with high-speed pick-and-place machines and minimizes component height—ideal for compact PCBs. However, the glass body is brittle, and thermal shock during rapid reflow cycles can cause microcracks, especially if preheating is inadequate. Under typical lead-free profiles (245–250°C peak), the risk increases if multiple components share the same thermal mass. To mitigate, ensure gradual ramp-up rates (<3°C/sec) and avoid localized hot spots during rework. Inspection via X-ray or automated optical inspection (AOI) is recommended for batch validation.
What environmental compliance aspects should engineers verify when sourcing the 1N4736UR-1 for commercial versus military applications?
The 1N4736UR-1 is listed as REACH unaffected and classified under EAR99, indicating standard commercial availability. However, military specifications often require additional screening, such as hermetic sealing, radiation hardness, or extended temperature cycling—features not guaranteed by the Microchip part alone. While the wide operating range (-65°C to 175°C) meets some MIL-PRF criteria, certification depends on full traceability and test documentation from the manufacturer. For defense projects, formal qualification per MIL-PRF-19500 is advised before inclusion in schematics.
In what scenarios would selecting the 1N4736UR-1 over an integrated LDO provide advantages in terms of space, cost, and performance?
The 1N4736UR-1 offers a compelling alternative to low-dropout regulators in simple linear regulation tasks where ultra-low noise is not required. For example, in battery-powered IoT nodes requiring a stable 6.8V rail from a higher-voltage source, combining a resistor and the 1N4736UR-1 consumes less board area and bill of materials cost than an LDO solution. Additionally, the Zener’s instantaneous turn-on and absence of startup delay make it preferable for always-on sensor biasing. However, efficiency drops significantly above 10% load, limiting utility in variable-current systems.
How does dynamic impedance (Zzt = 3.5Ω) influence output ripple rejection in a shunt regulator configuration using the 1N4736UR-1?
Dynamic impedance determines how much the Zener voltage shifts with changes in current. With Zzt = 3.5Ω, a 10mA variation causes a 35mV change in Vz. In shunt regulators, this affects line and load regulation. If input voltage fluctuates by 1V while maintaining regulation, output ripple may increase proportionally unless filtered effectively. To minimize impact, operate the 1N4736UR-1 near its knee current (typically 5–10mA), which ensures lowest impedance and best stability. Adding a bypass capacitor across the load further improves transient response despite the inherent impedance limitation.
What precautions are necessary when paralleling multiple 1N4736UR-1 diodes to achieve higher current capacity or redundancy?
Paralleling Zeners is generally discouraged due to Vz mismatch—even within ±10%, one unit may conduct more heavily, leading to uneven aging and potential failure. If required, use current-sharing resistors (e.g., 1–2Ω) in series with each diode to enforce balance. Power ratings must also be recalculated conservatively; assume no more than 70% of total nominal power due to derating. For mission-critical systems, consider discrete arrays with individual fuses rather than relying solely on passive sharing.
How does the absence of a specified series resistor requirement in the datasheet reflect real-world usage constraints of the 1N4736UR-1?
The 1N4736UR-1 is intended for use with external current-limiting resistors, as internal resistance is negligible. This design philosophy emphasizes flexibility but places responsibility on the user to select appropriate series resistance based on Vin, desired Iz, and power budget. Neglecting this resistor risks catastrophic failure: for instance, applying 12V directly could drive over 800mA through the diode, far exceeding 1W capability and causing immediate thermal runaway. Thus, proper circuit analysis must precede implementation to determine safe operating points.
Can the 1N4736UR-1 be used as a substitute for a precision voltage reference IC in high-accuracy data acquisition systems?
Not without significant degradation in performance. Reference ICs like the LTZ1000 offer initial accuracy <0.1%, drift <2ppm/°C, and very low noise—attributes absent in the 1N4736UR-1. While the latter suffices for coarse regulation or auxiliary rails, substituting it in ADC references introduces quantization error and instability. Only in low-resolution or infrequently sampled systems might the Zener serve adequately, provided tight binning and temperature control are applied during manufacturing.
What role does the glass body play in the electrical isolation and long-term reliability of the 1N4736UR-1 in harsh environments?
The DO-213AB package uses a glass passivation layer over the silicon die, providing excellent moisture resistance and dielectric strength. This makes the 1N4736UR-1 robust against humidity ingress and minor arcing, beneficial in humid climates or dusty industrial settings. However, mechanical stress from PCB flexure or thermal cycling can compromise the seal over decades. Field failures often manifest as increased leakage or erratic Vz after years of vibration exposure. Periodic environmental stress screening (ESS) during product development helps identify marginal units early.
How should the transition from through-hole 1N4733 to the surface-mount 1N4736UR-1 be managed in legacy designs undergoing miniaturization?
Migration requires attention to three areas: footprint compatibility, thermal performance, and automated handling. Though both packages mount similarly on PCBs, the MELF form factor demands precise stencil apertures and solder paste volumes to ensure reliable joints. Thermal vias under the cathode pad improve heat transfer compared to axial-leaded predecessors. Also, verify that existing hand-soldering tools accommodate the smaller profile; otherwise, switch to reflow processes. Lastly, confirm that signal integrity isn’t affected by reduced parasitic inductance, which actually benefits high-speed interfaces.
What metrics should be prioritized when comparing the 1N4736UR-1 against other 6.8V Zeners like the BZX84-C6V8 or MMSZ6V8 in portable medical devices?
In medical devices, safety and consistency outweigh raw specs. Prioritize parameters such as leakage current, temperature coefficient, and package hermeticity. The BZX84-C6V8 offers lower Zzt (~2.5Ω) and better stability but comes in SOD-123FL, which may require redesign. The MMSZ6V8 is ultra-small (SOT-323) but has higher leakage. For the 1N4736UR-1, evaluate whether its 10µA@4V leakage meets patient-isolation standards. Often, regulatory approvals (e.g., IEC 60601) mandate specific component qualifications, overriding datasheet values alone.
Given its EAR99 classification, are there any export restrictions affecting global distribution of the 1N4736UR-1 in defense-related projects?
EAR99 indicates the 1N4736UR-1 is subject to minimal export controls under U.S. regulations. However, end-use matters more than origin. If integrated into a system destined for embargoed countries or restricted end-users (e.g., certain military platforms), licensing may still apply regardless of ECCN. Always consult the Commerce Control List (CCL) and coordinate with legal teams when shipping globally. For dual-use ambiguity, obtain Commodity Classification Automated Reporting (CCAR) rulings before procurement.

Parts with Similar Specifications

The three parts on the right have similar specifications to Microchip Technology 1N4736UR-1

Product Attribute 1N4736UR-1/TR 1N4736PE3/TR12 1N4736E3/TR13 1N4736UR/TR
Part Number 1N4736UR-1/TR 1N4736PE3/TR12 1N4736E3/TR13 1N4736UR/TR
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Voltage - Zener (Nom) (Vz) - - - -
Impedance (Max) (Zzt) - - - -
Power - Max - - - -
Tolerance - - - -
Series - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Current - Reverse Leakage @ Vr - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)

1N4736UR-1 Datasheet PDF

Download 1N4736UR-1 pdf datasheets and Microchip Technology documentation for 1N4736UR-1 - Microchip Technology.

Environmental Information
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

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    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
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    one of my hobbies is skydiving. and when i'm skydiving this works great.

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Microchip Technology

1N4736UR-1

Microchip Technology
98D-1N4736UR-1

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