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HomeProductsDiscrete Semiconductor ProductsDiodes - Zener - Single1N5366AE3/TR13
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1N5366AE3/TR13 - Microchip Technology

Manufacturer Part Number
1N5366AE3/TR13
Manufacturer
Microchip Technology
Allelco Part Number
98D-1N5366AE3/TR13
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
44,448 pcs available, New & Original
Parts Description
DIODE ZENER 39V 5W T18
Package
T-18
Data sheet
1N5366AE3/TR13.pdf

Datasheets

1N5333B-1N5388B.pdf
RoHs Status
ROHS3 Compliant
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Specifications

1N5366AE3/TR13 Tech Specifications
Microchip Technology - 1N5366AE3/TR13 technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology - 1N5366AE3/TR13

Product Attribute Attribute Value
Manufacturer Microchip Technology
Voltage - Zener (Nom) (Vz) 39 V
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A
Tolerance ±10%
Supplier Device Package T-18
Series -
Power - Max 5 W
Product Attribute Attribute Value
Package / Case T-18, Axial
Package Tape & Reel (TR)
Operating Temperature -65°C ~ 150°C
Mounting Type Through Hole
Impedance (Max) (Zzt) 14 Ohms
Current - Reverse Leakage @ Vr 500 nA @ 28.1 V
Base Product Number 1N5366

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key electrical characteristics of the 1N5366AE3/TR13 Zener diode, and how do they influence high-voltage regulation in power supply designs?
The 1N5366AE3/TR13 features a nominal Zener voltage of 39 V with ±10% tolerance, meaning it operates effectively between 35.1 V and 42.9 V. Its maximum power rating is 5 W, which corresponds to a typical Zener current of approximately 128 mA under full load (5 W / 39 V). With an impedance (Zzt) of 14 ohms at rated conditions, this device offers moderate dynamic response for voltage clamping or reference applications. In power supply circuits requiring stable overvoltage protection, such as in telecom or industrial control systems, the 39 V breakdown ensures safe operation near 40 V rails while absorbing transient energy without thermal runaway. Engineers must ensure that peak instantaneous power does not exceed 5 W to maintain reliability.
How does the 1N5366AE3/TR13 compare to the 1N5366BG in terms of performance and application suitability for automotive environments?
While both share the same base product number and core electrical specifications—39 V Zener voltage, 5 W power dissipation, and T-18 package—the 1N5366AE3/TR13 is packaged in tape and reel format, making it more suitable for automated assembly processes. In contrast, the 1N5366BG typically appears in bulk packaging. For automotive applications requiring AEC-Q101 qualification, neither part may inherently meet all requirements unless explicitly certified; however, the 1N5366AE3/TR13’s RoHS3 compliance supports modern environmental standards often mandated in vehicle electronics. Thermal performance remains similar due to identical construction, so selection should prioritize supply chain logistics over intrinsic differences when operating within -65°C to 150°C range.
What design considerations arise when using the 1N5366AE3/TR13 in series with a resistive load to regulate voltage in a high-current switching regulator output stage?
The 1N5366AE3/TR13’s maximum power rating of 5 W limits its use in high-current scenarios; at 39 V, it can only safely handle about 128 mA continuously. If applied in a post-regulator clamp circuit protecting downstream ICs from overvoltage transients—such as during inductive kickback from motor drivers—the series resistor must drop excess voltage while ensuring the diode remains within its power envelope. For example, clamping a 48 V transient down to 39 V requires a resistor capable of dissipating (48 V – 39 V) × I_load + (I_transient)^2 × R_resistor. Additionally, leakage current of 500 nA at 28.1 V is negligible but becomes relevant in ultra-low-power designs where total system quiescent current matters.
Can the 1N5366AE3/TR13 be used interchangeably with 1N5366BRLG in precision analog reference circuits, and what trade-offs exist?
Although both diodes share the same 39 V Zener voltage and 5 W rating, the 1N5366BRLG is a lead-free version optimized for RoHS compliance and soldering compatibility, whereas the 1N5366AE3/TR13 includes additional traceability and reel packaging. However, their Zener impedance and temperature coefficients are nearly identical, suggesting comparable performance in reference applications. That said, the 1N5366AE3/TR13’s tighter manufacturing batch control (implied by reel-specific sourcing) may offer better consistency across production runs. Still, in precision analog stages demanding sub-1% stability, even minor variations in Zzt or thermal drift could affect accuracy—making calibration or trimming necessary regardless of substitution.
What is the significance of the 1N5366AE3/TR13’s moisture sensitivity level (MSL) rating of 1, and how does it impact storage and handling in mass production?
An MSL of 1 indicates that the 1N5366AE3/TR13 is not susceptible to moisture-related damage under normal ambient conditions, allowing unlimited shelf life without baking prior to reflow. This simplifies inventory management in high-volume manufacturing environments like consumer electronics assembly lines. Unlike components rated MSL 3 or higher, this diode does not require humidity conditioning before placement, reducing process overhead and minimizing risk of popcorning during reflow soldering. Consequently, engineers can confidently integrate it into automated pick-and-place workflows without additional drying steps, streamlining throughput for designs relying on through-hole mounting via the T-18 axial package.
How does the forward voltage drop of the 1N5366AE3/TR13 influence its use in bidirectional protection circuits compared to dedicated TVS diodes?
The 1N5366AE3/TR13 exhibits a forward voltage (Vf) of 1.2 V at 1 A, which is relatively high compared to low-Vf Schottky devices but acceptable for unidirectional clamping. In bidirectional transient suppression applications—such as ESD protection on RS-485 interfaces—this diode alone cannot provide symmetric response. Instead, it might be paired with another Zener or used asymmetrically. Its primary advantage lies in steady-state reverse regulation rather than fast transient absorption, where dedicated bidirectional TVS arrays offer superior response time (<1 ps) and lower clamping voltage. Thus, while the 1N5366AE3/TR13 can serve as a backup or secondary clamp, it is not ideal as a primary protection element in high-speed data lines.
What are the implications of substituting the 1N5366AE3/TR13 for the 1N5366BG in legacy industrial control panels with strict thermal cycling requirements?
Substitution between these parts is generally feasible due to matching electrical parameters—both deliver 39 V Zener voltage, 5 W dissipation, and operate across -65°C to 150°C. However, the 1N5366AE3/TR13’s reel packaging implies tighter lot-to-lot consistency, potentially offering better long-term reliability in harsh environments subject to repeated thermal stress. The absence of lead in the AE3/TR13 variant also reduces galvanic corrosion risks in humid installations. Nevertheless, if the original design specified through-hole T-18 mounting and manual soldering, the physical form factor difference between reel-fed and bulk-packed BG variants is minimal. Engineers should verify that solder joint integrity under thermal cycling exceeds 10,000 cycles, as the diode itself is robust up to 150°C junction temperature.
How does the Zener impedance (Zzt = 14 Ω) of the 1N5366AE3/TR13 affect dynamic regulation behavior in variable-load scenarios?
A Zzt of 14 Ω means that for every 1 mA change in Zener current around the knee point, the voltage varies by approximately 14 mV. While adequate for many clamping applications, this relatively high impedance makes the 1N5366AE3/TR13 less suitable for precision voltage references where tight load regulation is critical. In contrast, ultra-low-Zzt Zeners like the BZX84 series achieve values below 1 Ω. Therefore, in feedback loops or active regulators using this diode as a reference, additional buffering or compensation circuitry may be required to decouple load fluctuations. For passive overvoltage protection, however, the 14 Ω impedance is tolerable since the goal is to limit voltage spikes, not maintain constant output under varying loads.
What role does the 1N5366AE3/TR13 play in surge protection for battery-powered devices with regulated 39 V auxiliary rails?
In battery-backed systems where a 39 V auxiliary rail powers real-time clocks or non-volatile memory, the 1N5366AE3/TR13 serves as a reliable crowbar or shunt regulator against voltage transients from backfeeding or load dumps. Given its 5 W capability, it can absorb moderate energy surges without triggering protective fuses prematurely. For instance, during a short fault causing a brief 50 V spike, the diode conducts until current exceeds safe levels, prompting upstream protection to disconnect. Its through-hole T-18 package facilitates robust mechanical attachment for heat sinking if needed, though natural convection usually suffices given moderate power levels. Designers must ensure sufficient trace width and PCB layout margin to avoid localized heating during transient events.
Why might an engineer choose the 1N5366AE3/TR13 over integrated voltage supervisor ICs despite the latter offering programmable thresholds?
Integrated supervisors provide digital precision, monitoring multiple rails, and generating reset signals—advantages absent in discrete solutions like the 1N5366AE3/TR13. However, in simple, cost-sensitive designs requiring only hard overvoltage clamping at 39 V, the diode eliminates microcontroller dependency, reduces BOM count, and avoids firmware bugs. Its simplicity also minimizes propagation delay, enabling faster response to dangerous voltage excursions before microcontrollers initialize. Furthermore, the 1N5366AE3/TR13 functions reliably across the full industrial temperature range without calibration, unlike some ICs sensitive to supply noise or aging effects. This makes it preferable in rugged embedded systems where robustness outweighs programmability.
How does the 1N5366AE3/TR13’s reverse leakage current specification impact its use in high-impedance measurement circuits?
At 28.1 V, the reverse leakage current is specified at 500 nA, which is relatively low but may introduce offset errors in high-resistance sensor interfaces measuring voltages above 30 V. In precision instrumentation amplifiers or logarithmic converters using the diode as a reference, even nanoampere-level leakage can distort readings when multiplied by source impedance exceeding several megaohms. While acceptable in most power regulation contexts, designers should consider parallel guard rings or lower-leakage alternatives (e.g., surface-mount silicon Zeners) if signal fidelity is paramount. The 1N5366AE3/TR13 remains suitable for general-purpose protection where leakage has negligible effect on overall system performance.
What precautions should be taken when mounting the 1N5366AE3/TR13 on a PCB to ensure optimal thermal performance under continuous operation near its 5 W limit?
Since the 1N5366AE3/TR13 is housed in a T-18 axial package, its leads act as heat conductors. To maximize heat dissipation, the diode should be mounted perpendicular to airflow with adequate copper pour or ground plane contact at one end. Thermal resistance is not datasheeted but estimated at ~60–80°C/W based on similar packages; thus, dissipating 2 W continuously could raise junction temperature by 120–160°C above ambient. Engineers must derate power accordingly—ideally limiting operation to <3 W in enclosed spaces. Adhesive thermal pads or small heatsinks may be added for reliability in mission-critical applications, especially when ambient temperatures approach 70°C or higher.
How does the 1N5366AE3/TR13 perform in parallel configurations for increased current handling in redundant power paths?
Parallel Zeners rarely share current equally due to slight threshold mismatches, leading to uneven stress distribution. The 1N5366AE3/TR13’s ±10% tolerance means two units could have Vz values differing by up to 3.9 V, causing one to conduct heavily while the other remains off. Unless matched during procurement or actively balanced with ballast resistors, paralleling increases failure risk. For redundancy, better approaches include using dual diodes in anti-series configuration or selecting purpose-built multi-anode Zeners. Thus, while theoretically possible, practical implementations of the 1N5366AE3/TR13 in parallel require careful current-sharing analysis and margining beyond datasheet guarantees.
What environmental certifications support the suitability of the 1N5366AE3/TR13 for global deployment in consumer and medical equipment?
The 1N5366AE3/TR13 is RoHS3 compliant, meeting stricter hazardous substance restrictions including lead, mercury, cadmium, and certain phthalates. It is also REACH unaffected, indicating no SVHC content above regulatory thresholds. These certifications facilitate market access across Europe, North America, and Asia without additional documentation burdens. While not inherently medical-grade, its compliance with industrial and consumer safety standards allows integration into Class II medical peripherals where environmental regulations apply. However, functional safety certification (e.g., IEC 60601) still depends on full system validation, not just component compliance.
In what ways does the 1N5366AE3/TR13 complement flyback diode strategies in relay driver circuits operating at 39 V?
When driving inductive loads like relays at 39 V, freewheeling diodes (e.g., fast recovery types) manage energy stored in coil inductance. The 1N5366AE3/TR13, however, provides secondary protection by clamping any residual voltage spikes that bypass the primary diode due to parasitic capacitance or imperfect switching. Its slower response compared to ultra-fast diodes is acceptable here since the main task is sustained voltage regulation rather than nanosecond transient suppression. By positioning it across the relay terminals, the Zener prevents voltage overshoot from damaging MOSFETs or microcontrollers in the driver stage, adding a conservative safety layer without compromising switching speed.
How does the operating temperature range (-65°C to 150°C) of the 1N5366AE3/TR13 benefit aerospace or downhole instrumentation applications?
Aerospace and oil exploration systems often expose components to extreme temperatures—from cryogenic vacuum conditions to geothermal heat sources. The 1N5366AE3/TR13’s wide junction operating range ensures functionality across these environments without derating concerns. At -65°C, semiconductor mobility decreases slightly, increasing Zener voltage marginally, but within tolerance. Conversely, at 150°C, leakage current may rise modestly, yet still remain manageable due to the 500 nA spec at 28.1 V (well below thermal runaway thresholds). This broad envelope enables reliable use in satellites, deep-well sensors, or avionics where environmental extremes challenge conventional components, provided proper mechanical strain relief is implemented for the T-18 package.

Parts with Similar Specifications

The three parts on the right have similar specifications to Microchip Technology 1N5366AE3/TR13

Product Attribute 1N5366AE3/TR12 1N5365E3/TR13 1N5366AE3/TR8 1N5366BE3/TR12
Part Number 1N5366AE3/TR12 1N5365E3/TR13 1N5366AE3/TR8 1N5366BE3/TR12
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Voltage - Zener (Nom) (Vz) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Base Product Number - DAC34H84 MAX500 ADS62P42
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Tolerance - - - -
Impedance (Max) (Zzt) - - - -
Power - Max - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Reverse Leakage @ Vr - - - -
Series - - - -

1N5366AE3/TR13 Datasheet PDF

Download 1N5366AE3/TR13 pdf datasheets and Microchip Technology documentation for 1N5366AE3/TR13 - Microchip Technology.

Datasheets
1N5333B-1N5388B.pdf
PCN Assembly/Origin
Manufacturing Change 23/Feb/2021.pdf
Environmental Information
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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1N5366AE3/TR13 Image

1N5366AE3/TR13

Microchip Technology
98D-1N5366AE3/TR13

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