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HomeProductsDiscrete Semiconductor ProductsDiodes - Zener - SingleJANTX1N2846RB
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JANTX1N2846RB - Microchip Technology

Manufacturer Part Number
JANTX1N2846RB
Manufacturer
Microchip Technology
Allelco Part Number
98D-JANTX1N2846RB
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,434 pcs available, New & Original
Parts Description
ZENER DIODE
Package
TO-204AD (TO-3)
Data sheet
JANTX1N2846RB.pdf
RoHs Status
 
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Specifications

JANTX1N2846RB Tech Specifications
Microchip Technology - JANTX1N2846RB technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology - JANTX1N2846RB

Product Attribute Attribute Value
Manufacturer Microchip Technology
Voltage - Zener (Nom) (Vz) 200 V
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 2 A
Tolerance ±5%
Supplier Device Package TO-204AD (TO-3)
Series Military, MIL-PRF-19500/114
Power - Max 10 W
Product Attribute Attribute Value
Package / Case TO-204AD
Package Bulk
Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Through Hole
Impedance (Max) (Zzt) 90 Ohms
Current - Reverse Leakage @ Vr 10 µA @ 152 V
Base Product Number 1N2846

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the JANTX1N2846RB compare to standard commercial-grade 1N2846 Zener diodes in terms of reliability and temperature stability for aerospace applications?
The JANTX1N2846RB is qualified to MIL-PRF-19500/114, ensuring rigorous screening and testing beyond typical commercial devices like the standard 1N2846. This military qualification translates to superior reliability under extreme conditions, with a guaranteed operating junction temperature range from -65°C to +175°C (TJ), far exceeding the -55°C to +150°C range of many commercial equivalents. In high-reliability aerospace systems where failure modes can be catastrophic, the JANTX1N2846RB’s enhanced thermal performance and traceable manufacturing process make it preferable despite its RoHS non-compliance.
What are the key design considerations when using the JANTX1N2846RB in a high-voltage clamping circuit at 180 V input?
When designing a clamping circuit with the JANTX1N2846RB near its nominal Zener voltage of 200 V, engineers must account for its ±5% tolerance, which allows the actual breakdown voltage to vary between 190 V and 210 V. At an 180 V input, the diode will remain off under normal operation, but transient spikes above ~190 V could trigger conduction. Given its maximum power rating of 10 W, the required series resistance must limit peak current to below 50 mA (10 W / 200 V ≈ 50 mA) to prevent overheating. Additionally, the diode’s dynamic impedance of 90 ohms means output regulation will not be sharp—voltage ripple during conduction may reach several volts peak-to-peak depending on load and source impedance.
Why might an engineer choose the TO-204AD package over surface-mount alternatives when implementing the JANTX1N2846RB in a legacy military system?
The JANTX1N2846RB comes exclusively in a through-hole TO-204AD (TO-3) package, which is a legacy format widely used in military and aerospace hardware due to proven mechanical robustness and ease of hand-soldering in field maintenance scenarios. While modern designs often favor surface-mount devices for space and weight savings, the TO-3’s larger thermal mass helps dissipate the 10 W power rating more effectively in rugged environments. Furthermore, this package supports automated wave soldering without risk of tombstoning, making it ideal for mixed-technology boards in defense electronics.
How does the leakage current characteristic of the JANTX1N2846RB impact long-term power consumption in a bias network powered by a 152 V DC supply?
With a reverse leakage current specification of 10 µA at 152 V, the JANTX1N2846RB contributes negligible static power loss in most bias circuits. Over time, this low leakage ensures minimal drift in reference voltages and avoids heating effects that could compromise stability. For example, in a 152 V rail supplying multiple Zener references across a satellite subsystem, total leakage from several such diodes would consume less than 1 mW, preserving overall efficiency and reducing thermal management requirements compared to higher-leakage alternatives.
Can the JANTX1N2846RB safely handle brief overload conditions such as those caused by inductive kickback in a relay driver circuit?
Yes, the JANTX1N2846RB can manage brief overloads provided the energy does not exceed its surge capability. With a 10 W continuous rating at 200 V, it can tolerate pulses lasting milliseconds without damage if average power stays within limits. However, inductive loads generating fast transients may induce voltage spikes exceeding 200 V due to di/dt effects. Engineers should include snubber networks or transient suppressors in parallel to divert excess energy, as the diode’s slow response compared to TVS diodes makes it unsuitable as a first-line protection device despite its high voltage rating.
What role does the base product number 1N2846 play in sourcing and interchangeability decisions involving the JANTX1N2846RB?
The base product number 1N2846 identifies a family of Zener diodes standardized by JEDEC, enabling cross-referencing across manufacturers while maintaining core electrical characteristics. However, the JANTX1N2846RB includes "JANTX" prefix indicating military screening and extended temperature operation—critical distinctions when substituting components in certified systems. Although functionally similar to commercial 1N2846 variants, the JANTX version’s qualification status affects certification compliance and lifecycle management, requiring formal derating analyses before substitution in safety-critical applications.
Is the JANTX1N2846RB suitable for use in radiation-hardened environments, and how does its performance compare to specialized rad-hard Zeners?
The JANTX1N2846RB is not inherently radiation-hardened like devices designed for space applications, but its military-grade construction offers some tolerance to gamma and neutron exposure compared to commercial parts. However, it lacks explicit radiation testing data such as LET thresholds or TID (total ionizing dose) ratings found in devices like Microchip’s RTxx series. In low-earth orbit satellites with moderate radiation flux, it may perform adequately after conservative derating, but missions requiring >100 krad(Si) tolerance necessitate dedicated rad-hard components with verified SEU immunity—making the JANTX1N2846RB a suboptimal choice despite its high voltage and power capabilities.
How should thermal resistance be considered when mounting the JANTX1N2846RB on a PCB with limited copper area?
Although thermal data is not explicitly listed in the datasheet, the TO-204AD package typically exhibits a junction-to-case thermal resistance (θJC) around 1.5°C/W. Without a heatsink, case-to-ambient resistance becomes dominant, potentially reaching 40–60°C/W in poor layouts. To keep the JANTX1N2846RB within safe operating temperatures during 10 W dissipation, engineers must ensure adequate copper pour and consider forced airflow. For instance, at 25°C ambient, unrestricted airflow may keep junction temperature below 125°C, but sealed enclosures demand careful layout optimization or additional cooling measures.
What are the implications of the JANTX1N2846RB’s RoHS non-compliance for export control and international project integration?
As the JANTX1N2846RB is RoHS non-compliant, it cannot be legally distributed into the European Union or other jurisdictions enforcing RoHS directives without exemptions. This restricts its use in consumer or industrial electronics projects targeting global markets. However, military and government programs often obtain RoHS waivers under specific end-use certifications, allowing continued deployment in defense systems. Engineers integrating this component into export-controlled designs should verify regulatory alignment early in the procurement chain to avoid customs delays or contract penalties.
How does the forward voltage drop of the JANTX1N2846RB compare to Schottky diodes when conducting in avalanche mode?
Under normal reverse-bias conditions, the JANTX1N2846RB operates in Zener conduction with negligible forward voltage. However, during forward conduction (e.g., if accidentally polarized), its Vf is 1.5 V at 2 A—significantly higher than Schottky diodes like the BAT54, which exhibit ~0.3 V drop at similar currents. While this difference is irrelevant in proper Zener operation, miswiring or transient forward events could lead to excessive power dissipation (e.g., 3 W at 2 A), underscoring the importance of correct polarity and isolation in mixed-signal layouts.
What derating guidelines apply when selecting the JANTX1N2846RB for a mission life of 15 years in a ground-based radar system?
For long-life applications exceeding 10 years, military standards recommend derating power by 50% to account for parameter shifts over time. Applying this to the JANTX1N2846RB suggests limiting continuous dissipation to 5 W rather than its full 10 W rating. This reduces junction temperature rise, slows degradation of Zener voltage and leakage current, and improves reliability per Telcordia models. Assuming 25°C ambient and adequate airflow, operating at 5 W keeps TJ well below 125°C, extending mean time between failures and aligning with Level B screening requirements under MIL-HDBK-217F.
Can the JANTX1N2846RB be used in series to create a custom Zener reference above 200 V?
Yes, two or more JANTX1N2846RB diodes can be connected in series to achieve higher reference voltages, such as 400 V or 600 V. However, individual part variations within ±5% tolerance require precise matching to avoid unequal voltage sharing during operation. Without balancing resistors (typically 10–100 kΩ each), one diode may carry disproportionate current and fail prematurely. For stable operation above 200 V, engineers should include equalizing resistors and verify total power dissipation remains within safe limits—especially in high-impedance feedback loops where small imbalances can amplify over time.
How does the ECCN classification of EAR99 affect procurement logistics for the JANTX1N2846RB in dual-use applications?
Classified under ECCN EAR99, the JANTX1N2846RB is subject to U.S. export controls but generally does not require individual licenses for shipment to most countries. This simplifies logistics for commercial and defense contractors working on dual-use systems, though exporters must still comply with recordkeeping and registration requirements under the Export Administration Regulations (EAR). Unlike items controlled under ECCN 3A992 or 1A981, the JANTX1N2846RB avoids complex licensing hurdles, facilitating faster delivery times and broader availability through authorized distributors.
What testing procedures validate the performance of the JANTX1N2846RB after reflow soldering in a mixed-technology assembly line?
Due to its through-hole form factor, the JANTX1N2846RB is not designed for standard reflow profiles. Instead, wave soldering is preferred, requiring controlled preheat zones and solder wave contact times under 5 seconds. Post-assembly, parametric tests including Zener voltage measurement (±5% window around 200 V), leakage current verification (<10 µA @ 152 V), and power dissipation checks at rated load confirm functionality. Thermal cycling (-65°C to +175°C) per MIL-STD-883 Method 1010 further validates structural integrity, ensuring no microcracks develop in the glass encapsulation or metallurgical bonds critical for long-term reliability.
Why is the HTSUS code 8541.10.0050 significant when importing the JANTX1N2846RB into North America?
The Harmonized Tariff Schedule of the United States (HTSUS) code 8541.10.0050 classifies semiconductor diodes, including Zeners, under duty-free treatment for certain end-users like government agencies. Importing the JANTX1N2846RB under this code avoids tariffs typically applied to electronic components, reducing landed costs in defense contracts. It also signals compliance with U.S. trade regulations, aiding customs clearance and audits during audits for compliance with ITAR or other export control regimes applicable to military hardware containing this component.
How does the dynamic impedance of the JANTX1N2846RB influence regulation accuracy in a voltage reference divider for precision analog front ends?
With a maximum dynamic impedance (Zzt) of 90 ohms, the JANTX1N2846RB exhibits relatively soft regulation compared to ultra-low-Z devices like the BZX84 series. In a voltage divider feeding an op-amp buffer, a 90-ohm impedance combined with a 1 mA load current causes approximately 90 mV of droop—potentially unacceptable in 1% accuracy systems. Engineers must either increase Zener current significantly (to lower effective Zzt) or add an active buffer stage to isolate the reference from downstream loading, trading simplicity for improved stability in precision measurement chains.
What precautions are necessary when storing the JANTX1N2846RB to prevent electrostatic discharge damage prior to installation?
Although the JANTX1N2846RB is not labeled as ESD-sensitive like CMOS ICs, its glass passivation layer and metal-semiconductor junctions can degrade under high-field events. Standard precautions include handling in conductive trays, using grounded wrist straps, and avoiding direct contact with packaging materials. Storage in dry environments (<60% RH) prevents moisture-induced leakage increases, while anti-static bags should be used during transit to mitigate triboelectric charging risks—particularly important given the diode’s high voltage rating, which makes it vulnerable to latent damage from transient discharges.
How does the absence of a defined surge current rating for the JANTX1N2846RB limit its use in automotive transient suppression?
Unlike automotive-grade TVS diodes specified with IPPM (peak pulse current) ratings up to 200 A, the JANTX1N2846RB lacks explicit surge data, making it inappropriate for ISO 7637-2 or ISO 16750-2 compliant protection circuits. Without quantified surge capability, engineers cannot reliably assess whether the diode will survive load dump events common in 24 V systems. While it may handle modest transients in controlled environments, relying on it for automotive applications introduces unquantifiable risk. Instead, dedicated AEC-Q101 qualified transient suppressors should be used alongside Zener regulators for layered protection.

Parts with Similar Specifications

The three parts on the right have similar specifications to Microchip Technology JANTX1N2846RB

Product Attribute JANTX1N2843RB JANTX1N2845RB JANTX1N2844RB JANTX1N2842RB
Part Number JANTX1N2843RB JANTX1N2845RB JANTX1N2844RB JANTX1N2842RB
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Reverse Leakage @ Vr - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Mounting Type - Surface Mount Through Hole Surface Mount
Series - - - -
Impedance (Max) (Zzt) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Tolerance - - - -
Voltage - Zener (Nom) (Vz) - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Power - Max - - - -

JANTX1N2846RB Datasheet PDF

Download JANTX1N2846RB pdf datasheets and Microchip Technology documentation for JANTX1N2846RB - Microchip Technology.

PCN Assembly/Origin
Manufacturing Change 23/Feb/2021.pdf
Environmental Information
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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Microchip Technology

JANTX1N2846RB

Microchip Technology
98D-JANTX1N2846RB

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