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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleJANTX1N3293R
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JANTX1N3293R - Microchip Technology

Manufacturer Part Number
JANTX1N3293R
Manufacturer
Microchip Technology
Allelco Part Number
98D-JANTX1N3293R
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
3,630 pcs available, New & Original
Parts Description
DIODE GEN PURP 600V 100A DO205AA
Package
DO-205AA (DO-8)
Data sheet
JANTX1N3293R.pdf
RoHs Status
 
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In stock: 3630

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Specifications

JANTX1N3293R Tech Specifications
Microchip Technology - JANTX1N3293R technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology - JANTX1N3293R

Product Attribute Attribute Value
Manufacturer Microchip Technology
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 310 A
Voltage - DC Reverse (Vr) (Max) 600 V
Technology Standard
Supplier Device Package DO-205AA (DO-8)
Speed Standard Recovery >500ns, > 200mA (Io)
Series Military, MIL-PRF-19500/246
Product Attribute Attribute Value
Package / Case DO-205AA, DO-8, Stud
Package Bulk
Operating Temperature - Junction -65°C ~ 200°C
Mounting Type Stud Mount
Current - Reverse Leakage @ Vr 10 mA @ 600 V
Current - Average Rectified (Io) 100A
Capacitance @ Vr, F -

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and mounting considerations when designing in the JANTX1N3293R for high-current rectification applications?
The JANTX1N3293R is a stud-mount diode in a DO-205AA (DO-8) package rated for 100A average rectified current and 600V reverse blocking. Due to its chassis-mount configuration and high power dissipation potential—especially at 1.55 V forward voltage under heavy load—effective heat sinking is critical. The junction-to-case thermal resistance must be minimized through proper interface materials (e.g., thermal pads or greases) and a heatsink capable of maintaining case temperature within safe limits. Given its military-grade qualification (MIL-PRF-19500/246), the device can operate up to 200°C junction temperature, but sustained operation near this limit accelerates aging. Designers should ensure mechanical stability of the stud mount to avoid thermal cycling-induced fatigue, particularly in vibration-prone environments.
How does the reverse leakage current of the JANTX1N3293R behave under high-temperature conditions, and what impact does it have on system efficiency?
The JANTX1N3293R exhibits a reverse leakage current of 10 mA at 600 V and 25°C, but this value increases significantly with temperature due to intrinsic carrier generation in the silicon. At elevated junction temperatures approaching 150–200°C, leakage can rise by an order of magnitude or more, contributing to standby power loss in high-voltage rectifiers. While acceptable in many military and industrial applications where efficiency is secondary to reliability, this behavior must be modeled in precision power systems to avoid unexpected thermal runaway or reduced overall efficiency, especially in continuous conduction modes.
Can the JANTX1N3293R be used in parallel configurations to increase current handling, and what derating or balancing measures are necessary?
Parallel operation of the JANTX1N3293R is technically feasible but requires careful current sharing due to the negative temperature coefficient of forward voltage above certain current levels. Without ballast resistors or matched units, thermal imbalances can lead to current hogging and premature failure. Microchip recommends derating total current by at least 20–30% when paralleling and using individual fast-acting fuses. Additionally, symmetrical layout, identical thermal paths, and close physical proximity are essential to minimize parasitic inductance and ensure dynamic current sharing during switching transients.
What are the implications of the standard recovery speed (>500 ns) of the JANTX1N3293R in high-frequency rectification circuits?
With a reverse recovery time exceeding 500 ns and specified for currents above 200 mA, the JANTX1N3293R is not suitable for high-frequency switching applications such as switch-mode power supplies operating above 20–30 kHz. The slow recovery leads to significant reverse recovery losses, increased EMI, and potential cross-conduction in bridge configurations. It is best applied in line-frequency (50/60 Hz) or low-frequency rectifiers where switching losses are negligible compared to conduction losses. For higher frequencies, fast or ultrafast diodes should be considered despite the JANTX1N3293R’s robust current and voltage ratings.
How does the military-grade qualification (MIL-PRF-19500/246) of the JANTX1N3293R influence its reliability in commercial aerospace applications?
The JANTX1N3293R’s qualification under MIL-PRF-19500/246 ensures traceability, rigorous screening (including burn-in and environmental testing), and consistent performance across extreme temperatures (-65°C to +200°C). This makes it suitable for commercial aerospace systems requiring high reliability without full military certification overhead. The screening process reduces infant mortality and provides confidence in long-term operation under thermal cycling, shock, and vibration—critical in avionics or propulsion power systems where component failure carries high risk.
What forward voltage drop should be expected from the JANTX1N3293R under typical operating conditions, and how does it compare to similar 100A diodes?
The JANTX1N3293R has a maximum forward voltage of 1.55 V at 310 A, but under its rated 100 A average current, typical Vf is closer to 1.1–1.3 V depending on temperature and waveform. This is competitive among standard recovery diodes in the 100A class; for example, some commercial alternatives may exhibit slightly lower Vf but lack the same environmental robustness. The trade-off favors the JANTX1N3293R in high-reliability applications where conduction loss is secondary to survivability under harsh conditions.
Is the JANTX1N3293R suitable for use in reverse polarity protection circuits, and what design precautions are needed?
Although the JANTX1N3293R is labeled as "Reverse Polarity" technology, this refers to internal construction robustness rather than intended use as a protection diode. Its high forward voltage and slow recovery make it inefficient for low-loss reverse polarity blocking in sensitive electronics. However, in high-power systems where transient energy is manageable, it can serve as a sacrificial clamp if properly fused and thermally managed. Designers should avoid relying solely on its reverse blocking for protection without additional circuitry, as unintended conduction during fault conditions may lead to thermal overload.
How does the non-RoHS status of the JANTX1N3293R affect its adoption in modern industrial designs, and are there compliant alternatives?
The JANTX1N3293R is non-RoHS compliant, primarily due to lead-containing materials in its construction, which limits its use in consumer electronics or EU-regulated products. However, it remains acceptable in military, aerospace, and industrial segments where RoHS exemptions apply. For RoHS-compliant alternatives, engineers must evaluate trade-offs: equivalent performance in high-current, high-voltage rectification often requires moving to newer packaging or accepting higher cost. The JANTX1N3293R remains viable where legacy compatibility, proven reliability, and qualification heritage outweigh environmental compliance requirements.
What mounting torque and interface material recommendations apply to the JANTX1N3293R to ensure optimal thermal performance and mechanical integrity?
The JANTX1N3293R’s stud mount (DO-205AA) requires controlled torque—typically 60–90 in-lbs (6.8–10.2 N·m)—to ensure adequate thermal contact without damaging the package or substrate. Use of thermally conductive interface materials such as silicone-based pads or phase-change materials is recommended, avoiding excessive grease that may pump out under thermal cycling. Flatness of the heatsurface should be within 0.002 inches to prevent air gaps. Proper mounting ensures the junction-to-case thermal resistance remains near datasheet values, which is essential for maintaining safe operating temperatures at full 100A load.
How does the capacitance characteristic of the JANTX1N3293R influence its performance in snubber or filtering applications?
While the datasheet does not specify capacitance, typical values for diodes of this size and voltage rating range from 500 pF to 1 nF at 600 V reverse bias. This relatively high junction capacitance can affect high-frequency noise filtering and interact with parasitic inductances in snubber networks, potentially causing ringing during turn-off. In rectifier applications with inductive loads, this capacitance—combined with the slow recovery—may necessitate RC snubbers to dampen voltage spikes. Designers should empirically validate transient behavior rather than relying solely on idealized models.
Can the JANTX1N3293R be operated continuously at its maximum rated current of 100A, and what derating guidelines apply?
Continuous operation at 100A is only achievable with ideal thermal management—specifically, maintaining the case temperature well below 100°C. Microchip’s derating curves (implied by thermal resistance and Tj max) suggest reducing current by approximately 0.5–0.7% per °C above 25°C ambient. At 125°C case temperature, current should be derated to around 60–70A to avoid exceeding the 200°C junction limit. Real-world designs must include safety margins; sustained full-load operation demands forced airflow or liquid cooling in most environments.
What are the key differences between the JANTX1N3293R and commercial-grade diodes with similar voltage and current ratings?
Compared to commercial 100A/600V diodes, the JANTX1N3293R offers superior environmental resilience, tighter parametric tolerances, and full qualification testing per MIL-PRF-19500/246. Commercial equivalents may have lower cost and better RoHS compliance but typically lack the same level of screening, long-term reliability data, and performance guarantees across extreme temperatures. The JANTX1N3293R also exhibits more predictable aging characteristics under thermal stress, making it preferable in systems where field failure is unacceptable, despite higher initial cost and non-RoHS status.

Parts with Similar Specifications

The three parts on the right have similar specifications to Microchip Technology JANTX1N3293R

Product Attribute JANTX1N3294R JANTX1N3289R JANTX1N3295R JANTX1N3293
Part Number JANTX1N3294R JANTX1N3289R JANTX1N3295R JANTX1N3293
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Voltage - Forward (Vf) (Max) @ If - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Capacitance @ Vr, F - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Series - - - -
Current - Reverse Leakage @ Vr - - - -
Operating Temperature - Junction - - - -
Speed - - - -
Current - Average Rectified (Io) - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Technology - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Voltage - DC Reverse (Vr) (Max) - - - -

JANTX1N3293R Datasheet PDF

Download JANTX1N3293R pdf datasheets and Microchip Technology documentation for JANTX1N3293R - Microchip Technology.

PCN Assembly/Origin
Manufacturing Change 23/Feb/2021.pdf
Environmental Information
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
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Microchip Technology

JANTX1N3293R

Microchip Technology
98D-JANTX1N3293R

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