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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleJANTX1N3295R
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JANTX1N3295R - Microchip Technology

Manufacturer Part Number
JANTX1N3295R
Manufacturer
Microchip Technology
Allelco Part Number
98D-JANTX1N3295R
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,220 pcs available, New & Original
Parts Description
DIODE GEN PURP 100A DO205AA
Package
DO-205AA (DO-8)
Data sheet
JANTX1N3295R.pdf
RoHs Status
 
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In stock: 4220

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Specifications

JANTX1N3295R Tech Specifications
Microchip Technology - JANTX1N3295R technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology - JANTX1N3295R

Product Attribute Attribute Value
Manufacturer Microchip Technology
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 310 A
Technology Standard
Supplier Device Package DO-205AA (DO-8)
Speed Standard Recovery >500ns, > 200mA (Io)
Series Military, MIL-PRF-19500/246
Package / Case DO-205AA, DO-8, Stud
Product Attribute Attribute Value
Package Bulk
Operating Temperature - Junction -65°C ~ 200°C
Mounting Type Stud Mount
Current - Reverse Leakage @ Vr 10 mA @ 1000 V
Current - Average Rectified (Io) 100A
Capacitance @ Vr, F -

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the JANTX1N3295R perform under high-current rectification in chassis-mounted applications, and what thermal considerations should be accounted for during design-in?
The JANTX1N3295R is rated for 100A average rectified current in a stud-mounted DO-205AA (DO-8) package, making it suitable for high-power rectification in industrial and military power systems. At 310 A forward current, the forward voltage drop reaches 1.55 V, resulting in significant conduction losses—approximately 480 W under peak load. Effective heat sinking is critical; the junction-to-case thermal resistance must be minimized through proper mounting torque, thermal interface materials, and heatsink design to maintain junction temperatures within the -65°C to 200°C operating range. Without adequate thermal management, localized hot spots can degrade reliability, especially given the non-RoHS construction and military-grade qualification.
What are the key differences between the JANTX1N3295R and commercial-grade diodes with similar current ratings, particularly in terms of reliability and environmental resilience?
Unlike commercial diodes, the JANTX1N3295R is qualified to MIL-PRF-19500/246, indicating it has undergone stringent screening for high-reliability applications, including burn-in, radiation hardness (where applicable), and extended temperature cycling. This military-grade qualification ensures stable performance under extreme thermal transients and mechanical stress, which is essential in aerospace or defense systems. Additionally, its reverse leakage current of 10 mA at 1000 V reflects tighter process controls and material stability compared to commercial equivalents, reducing the risk of thermal runaway in high-voltage reverse-bias conditions.
Can the JANTX1N3295R be used in reverse polarity protection circuits, and how does its standard recovery behavior influence switching performance?
Yes, the JANTX1N3295R is specified with reverse polarity technology, making it suitable for reverse polarity protection in high-current DC systems. However, its standard recovery time—exceeding 500 ns and specified for currents above 200 mA—limits its use in high-frequency switching applications. The slow recovery introduces significant reverse recovery charge (Qrr), leading to increased switching losses and potential voltage spikes in inductive loads. For such cases, fast or ultrafast diodes are preferred; the JANTX1N3295R is better suited for line-frequency rectification or low-frequency inverter stages where switching speed is not a primary constraint.
How does the forward voltage characteristic of the JANTX1N3295R compare to silicon carbide (SiC) diodes in similar power handling ranges?
The JANTX1N3295R exhibits a forward voltage of 1.55 V at 310 A, which is typical for silicon-based rectifiers. In contrast, SiC diodes with comparable current ratings often show lower conduction losses at high voltages due to their near-constant forward drop above threshold. However, at 1000 V blocking, the JANTX1N3295R remains competitive in cost-sensitive, high-reliability systems where switching frequency is low. The trade-off lies in efficiency versus ruggedness: SiC offers superior high-frequency performance and thermal conductivity, while the JANTX1N3295R provides proven long-term stability in harsh environments due to its military qualification and robust packaging.
What mounting and mechanical integration practices are recommended for the JANTX1N3295R to ensure long-term reliability in chassis-mounted configurations?
The JANTX1N3295R utilizes a DO-205AA (DO-8) stud package designed for direct chassis mounting. To ensure reliable thermal and mechanical contact, use a properly sized heatsink with flat, clean surfaces, and apply manufacturer-recommended torque (typically 6–10 in-lbs) to avoid case cracking or thermal interface degradation. Insulating washers and shoulder bushings should be used if electrical isolation from the chassis is required. Given its military heritage, the device is built to withstand vibration and shock, but improper mounting can induce mechanical stress that compromises the hermetic seal or internal bond wires over time.
Is the JANTX1N3295R suitable for use in high-altitude or space-constrained power systems, and what derating guidelines should be applied?
The JANTX1N3295R’s military qualification and wide operating temperature range (-65°C to 200°C) support deployment in high-altitude or extreme environments where air density and cooling efficiency are reduced. However, derating is essential: at altitudes above 3000 meters, convective cooling diminishes, requiring a reduction in allowable current by 10–15% per 1000 meters. Additionally, in space-constrained designs, ensure adequate clearance around the stud mount to prevent arcing at 1000 V reverse voltage, especially under low-pressure conditions. Thermal modeling with actual airflow and altitude data is recommended to avoid junction overheating.
How does the reverse leakage current of the JANTX1N3295R impact system efficiency in high-voltage standby modes?
With a reverse leakage current of 10 mA at 1000 V, the JANTX1N3295R dissipates 10 W in reverse bias under full blocking voltage. While this is acceptable in high-power rectifiers where conduction losses dominate, it becomes a concern in low-duty-cycle or standby modes where leakage constitutes a larger portion of total losses. In battery-powered or energy-sensitive systems, this level of leakage may necessitate additional circuitry or selection of lower-leakage alternatives. However, for military or industrial systems prioritizing ruggedness over ultra-low standby loss, this characteristic is within expected bounds for a standard recovery silicon diode.
What are the implications of the JANTX1N3295R being non-RoHS compliant, and how does this affect its use in modern system designs?
The JANTX1N3295R is non-RoHS compliant due to its use of lead-based solder and high-temperature alloys in the construction, which are typical for military and high-reliability components. This restricts its use in commercial applications requiring RoHS adherence but is acceptable in defense, aerospace, or industrial systems exempt from RoHS regulations. Designers must ensure supply chain traceability and consider obsolescence planning, as non-RoHS components may face long-term availability challenges. The REACH unaffected status, however, indicates no SVHCs above threshold, simplifying regulatory compliance in non-EU markets.
Can the JANTX1N3295R be paralleled to increase current capacity, and what balancing techniques are necessary to ensure even current sharing?
Paralleling multiple JANTX1N3295R diodes is possible but requires careful design due to the positive temperature coefficient of forward voltage in silicon diodes. At high currents, mismatched Vf can lead to thermal runaway in the device carrying more current. To mitigate this, use individual current-sharing resistors (typically 0.01–0.05 Ω, rated for power dissipation) in series with each diode and ensure symmetrical layout and thermal coupling. Active balancing or matched binning is recommended for critical applications. The military-grade consistency of the JANTX1N3295R improves matching, but thermal gradients across the assembly remain the dominant factor in current imbalance.
How does the standard recovery speed of the JANTX1N3295R affect electromagnetic interference (EMI) in power converter designs?
The slow recovery characteristic of the JANTX1N3295R—exceeding 500 ns—generates high di/dt during reverse recovery, leading to voltage ringing and broadband EMI, particularly in hard-switched topologies like phase-controlled rectifiers or low-frequency inverters. This can necessitate additional snubber circuits (RC networks) or input filtering to meet conducted emission standards. While not ideal for high-frequency SMPS, the device’s behavior is predictable and manageable in line-frequency applications. Designers should simulate or measure switching waveforms to assess peak reverse recovery current and its spectral content, especially when integrating with sensitive control circuitry.

Parts with Similar Specifications

The three parts on the right have similar specifications to Microchip Technology JANTX1N3295R

Product Attribute JANTX1N3294R JANTX1N3289R JANTX1N3293R JANTX1N3295
Part Number JANTX1N3294R JANTX1N3289R JANTX1N3293R JANTX1N3295
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Operating Temperature - Junction - - - -
Current - Reverse Leakage @ Vr - - - -
Technology - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Speed - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Voltage - Forward (Vf) (Max) @ If - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Current - Average Rectified (Io) - - - -
Capacitance @ Vr, F - - - -
Series - - - -

JANTX1N3295R Datasheet PDF

Download JANTX1N3295R pdf datasheets and Microchip Technology documentation for JANTX1N3295R - Microchip Technology.

PCN Assembly/Origin
Manufacturing Change 23/Feb/2021.pdf
Environmental Information
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

  • Embe***dMotion
    Aug 5, 2026

    Purchased this DSP controller for a motor control application. Stable processing performance and very good response under varying loads.

  • FPGA***dio
    Jul 30, 2026

    This FPGA handled our logic design without any surprises. Configuration completed quickly and timing met the project requirements.

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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Electrostatic Discharge Protection and Handling

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Microchip Technology

JANTX1N3295R

Microchip Technology
98D-JANTX1N3295R

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